`571-272-7822
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` Paper 12
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`Entered: December 11, 2014
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`
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`
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`UNITED STATES PATENT AND TRADEMARK OFFICE
`____________
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`____________
`
`TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
`and TSMC NORTH AMERICA CORPORATION,
`Petitioners,
`
`v.
`
`ZOND, LLC,
`Patent Owner.
`____________
`
`Case IPR2014-00861
`Patent 6,806,652 B1
`____________
`
`
`
`
`
`Before KEVIN F. TURNER, JONI Y. CHANG, SUSAN L.C. MITCHELL,
`and JENNIFER M. MEYER, Administrative Patent Judges.
`
`
`MITCHELL, Administrative Patent Judge.
`
`
`
`DECISION
`Institution of Inter Partes Review
`37 C.F.R. § 42.108
`
`
`
`
`
`
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`IPR2014-00861
`Patent 6,806,652 B1
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`I. INTRODUCTION
`
`Taiwan Semiconductor Manufacturing Company, Ltd. and TSMC
`
`North America Corporation (collectively, “TSMC”) filed a Petition
`
`requesting inter partes review of claims 18–34 of U.S. Patent No.
`
`6,806,652 B1 (“the ’652 patent”). Paper 2 (“Pet.”). Zond, LLC (“Zond”)
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`filed a Preliminary Response. Paper 8 (“Prelim. Resp.”). We have
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`jurisdiction under 35 U.S.C. § 314.
`
`The standard for instituting an inter partes review is set forth in
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`35 U.S.C. § 314(a), which provides:
`
`THRESHOLD.—The Director may not authorize an inter
`partes review to be instituted unless the Director determines
`that the information presented in the petition filed under section
`311 and any response filed under section 313 shows that there
`is a reasonable likelihood that the petitioner would prevail with
`respect to at least 1 of the claims challenged in the petition.
`
`Upon consideration of TSMC’s Petition and Zond’s Preliminary
`
`Response, we conclude that the information presented in the Petition
`
`demonstrates that there is a reasonable likelihood that TSMC would prevail
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`in challenging claims 18–34 (“the challenged claims”) as unpatentable under
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`35 U.S.C. § 103(a). Pursuant to 35 U.S.C. § 314, we hereby authorize an
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`inter partes review to be instituted as to claims 18–34 of the ’652 patent
`
`based on the specific grounds discussed below.
`
`A. Related Matters
`
`
`
`TSMC indicates that the ’652 patent was asserted in Zond, LLC v.
`
`Fujitsu, No.1:13-cv-11634-WGY (D. Mass.), in which TSMC is a
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`co-defendant. Pet. 1. TSMC also identifies other cases where Zond asserted
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`the claims of the ’652 patent against third parties, as well as other Petitions
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`for inter partes review that are related to this proceeding. Id.
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`B. The ’652 patent
`
`The ’652 patent notes several problems with known magnetron
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`sputtering systems, such as poor target utilization resulting from a relatively
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`high concentration of positively charged ions in the region that results in a
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`non-uniform plasma. Ex. 1101, 4:23–28. The ’652 patent states that while
`
`increasing the power applied to the plasma may increase the uniformity and
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`density of the plasma, doing so may significantly increase the probability of
`
`establishing an electrical breakdown condition of arcing. Id. at 4:31–37.
`
`The invention set forth in the ’652 patent, which is described as having a
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`higher density of ions for a given input power than known plasma systems,
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`involves a plasma generation method that provides independent control of
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`two or more co-existing plasmas in a system. Id. at 4:62–64.
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`One embodiment of the ’652 patent is shown in Figure 2A set forth
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`below.
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`Patent 6,806,652 B1
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`Figure 2A, reproduced above, shows a cross-sectional view of plasma
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`generating apparatus 200 with segmented cathode 202. Id. at 5:43–45. Such
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`segmented cathode has inner cathode section 202a and outer cathode section
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`202b. Id. at 5:45–47. Outer cathode 202b is coupled to first output 204 of
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`first power supply 206, which can operate in a constant power mode or a
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`constant voltage mode. Id. at 5:56–67. Second output 208 of first power
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`supply 206 is coupled to first anode 210 that has insulator 211 to isolate it
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`from outer cathode section 202b. Id. at 6:5–7.
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`Gap 212 is formed between first anode 210 and outer cathode section
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`202b that is sufficient to allow current to flow through region 214 within gap
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`212. Id. at 6:34–38. Gap 212 can be a plasma generator where plasma is
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`ignited in gap 212 from feed gas 234, such as argon, fed from gas line 230.
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`Id. at 6:59–61; 8:1–3, 10–11. Such an ignition condition and plasma
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`development in the gap can be optimized by crossed electric and magnetic
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`fields in gap 212 that trap electrons and ions improving the efficiency of the
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`ionization process. Id. at 6:61–67. Gap 212 can be configured to generate
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`excited atoms, which can increase the density of plasma, from ground state
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`atoms. Id. at 6:44–46. “Since excited atoms generally require less energy to
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`ionize than ground state gas atoms, a volume of excited atoms can generate
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`higher density plasma than a similar volume of ground state feed gas atoms
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`for the same input energy.” Id. at 6:46–50.
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`Gap 212 facilitates high input power by having additional feed gas
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`supplied to gap 212 that displaces some of the already developing plasma
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`and absorbs any excess power applied to the plasma. Id. at 7:1–6. Such
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`absorption prevents the plasma from contracting and terminating. Id. at 7:6–
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`9. Feed gases 234, 236 are introduced into the chamber from more than one
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`feed source, such as feed source 238, 240, through gas lines 230, 232 that
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`may include in-line gas valves 242, 244 to control gas flow to the chamber.
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`Id. at 8:1–5. Pulsing the feed gas can help generate excited atoms, including
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`metastable atoms, by increasing the instantaneous pressure in gap 212, while
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`the average pressure in the chamber is unchanged. Id. at 8:23–28.
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`Second power supply 222 applies high power pulses between inner
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`cathode section 202a and second anode 226 after an appropriate volume of
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`initial plasma is present in region 252. Id. at 12:1–5. “The high-power
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`pulses create an electric field 254 between the inner cathode section 202b
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`and the second anode 226 that strongly-ionizes the initial plasma thereby
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`creating a high-density plasma in the region 252.” Id. at 12:5–9. These high
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`power pulses from second power supply 222, which add additional power to
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`an already strongly ionized plasma, super-ionizes the high-density plasma in
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`region 252. Id. at 11:54–57. The ’652 patent defines “super-ionized” to
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`mean that “at least 75% of the neutral atoms in the plasma are converted to
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`ions.” Id. at 5:8–10.
`
`Figure 2B, reproduced below, shows a more detailed cross-sectional
`
`view of the segmented cathode of Figure 2A.
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`Figure 2B shows that the electric fields 250, 254, which enhance the
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`formation of ions in the plasma, can facilitate a multi-step ionization process
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`of feed gases 234, 236, respectively, that substantially increases the rate at
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`which the high-density plasma is formed. Id. at 12:50–56.
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`Figure 12, set forth below with TSMC’s annotations, shows another
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`embodiment of the ’652 patent.
`
`
`Excited atom source 732b generates an initial plasma and excited
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`atoms, which include metastable atoms, from ground state atoms from feed
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`gas 234. Id. at 25:35–38. Nozzle chamber 738 traps a large fraction of ions
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`and electrons, while excited atoms and ground state atoms flow through
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`aperture 737 of skimmer 736. Id. at 27:18–21. The ’652 patent further
`
`provides:
`
`After a sufficient volume of excited atoms including
`
`metastable atoms is present proximate to the inner cathode
`section 732a of the cathode assembly 732, the second power
`supply 222 generates an electric field (not shown) proximate to
`the volume of excited atoms between the inner cathode section
`732a and the second anode 706. The electric field super-
`ionizes the initial plasma by raising the energy of the initial
`plasma including the volume of excited atoms which causes
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`collisions between neutral atoms, electrons, and excited atoms
`including metastable atoms in the initial plasma. The high-
`density collisions generate the high-density plasma proximate
`to the inner cathode section 732a. The high-density plasma
`includes ions, excited atoms and additional metastable atoms.
`The efficiency of this multi-step ionization process increases as
`the density of excited atoms and metastable atoms increases.
`
`Id. at 27:22–37.
`
`C. Illustrative Claim
`
`Of the challenged claims, claim 18 is the only independent claim.
`
`Challenged claims 19 through 34 depend, either directly or indirectly, from
`
`claim 18. Claim 18, reproduced below, is illustrative:
`
`18. A method of generating a high-density plasma, the method
`comprising:
`
`a) generating an initial plasma and excited atoms from a volume
`of feed gas;
`
`b) transporting the initial plasma and excited atoms proximate
`to a cathode assembly; and
`
`c) super-ionizing the initial plasma proximate to the cathode
`assembly, thereby generating a high-density plasma.
`
`Ex. 1101, 34:45–53.
`
`D. Prior Art Relied Upon
`
`TSMC relies upon the following prior art references:
`
`
`
`
`
`Iwamura et al.
`
`US 5,753,886
`
`May 19, 1998
`
`(Ex. 1108)
`
`Campbell et al. US 5,429,070
`
`July 4, 1995
`
`(Ex. 1114)
`
`D.V. Mozgrin, et al., High-Current Low-Pressure Quasi-Stationary
`
`Discharge in a Magnetic Field: Experimental Research, 21 PLASMA
`PHYSICS REPORTS 400–409 (1995) (Ex. 1103) (“Mozgrin”).
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`A. A. Kudryavtsev and V. N. Skrebov, Ionization Relaxation in a
`Plasma Produced by a Pulsed Inert-Gas Discharge, 28(1) SOV. PHYS. TECH.
`PHYS. 30–35 (Jan. 1983) (Ex. 1006) (“Kudryavtsev”).
`
`D. W. Fahey, W. F. Parks, and L. D. Schearer, High Flux Beam
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`Source of Thermal Rare-Gas Metastable Atoms, 13 J. PHYS. E: SCI.
`INSTRUM. 381–383 (1980) (Ex. 1105) (“Fahey”).
`
`
`E. Asserted Grounds of Unpatentability
`
`TSMC asserts the following grounds of unpatentability:
`
`Claims
`
`Basis
`
`References
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`18–30, 33, and 34
`
`§ 103(a) Mozgrin, Kudryavtsev, and Fahey
`
`31 and 32
`
`§ 103(a)
`
`18–30, 33, and 34
`
`§ 103(a)
`
`31 and 32
`
`18–30
`
`31 and 32
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`33 and 34
`
`
`
`Mozgrin, Kudryavtsev, Fahey, and
`Campbell
`Mozgrin, Kudryavtsev, Fahey, and
`Iwamura
`Mozgrin, Kudryavtsev, Fahey,
`Campbell, and Iwamura
`
`§ 103(a)
`
`§ 103(a) Mozgrin and Iwamura
`
`§ 103(a) Mozgrin, Iwamura, and Campbell
`
`§ 103(a) Mozgrin, Iwamura, and Fahey
`
`III. ANALYSIS
`
`A. Claim Construction
`
`In an inter partes review, claim terms in an unexpired patent are given
`
`their broadest reasonable construction in light of the specification of the
`
`patent in which they appear. 37 C.F.R. § 42.100(b). Claim terms are given
`
`their ordinary and customary meaning as would be understood by one of
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`ordinary skill in the art in the context of the entire disclosure. In re
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`Translogic Tech., Inc., 504 F.3d 1249, 1257 (Fed. Cir. 2007). An inventor
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`may rebut that presumption by providing a definition of the term in the
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`specification with reasonable clarity, deliberateness, and precision. In re
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`Paulsen, 30 F.3d 1475, 1480 (Fed. Cir. 1994). In the absence of such a
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`definition, limitations are not to be read from the specification into the
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`claims. In re Van Geuns, 988 F.2d 1181, 1184 (Fed. Cir. 1993).
`
`In the instant proceeding, TSMC proposes a construction of the terms
`
`“transporting the initial plasma and exited atoms proximate to a cathode
`
`assembly” and “super-ionizing the initial plasma proximate to the cathode
`
`assembly.” Pet. 11–12 (emphasis added). Zond offers its own construction
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`of these two terms, in addition to a construction of a “generating an initial
`
`plasma and excited ions from a volume of feed gas.” Prelim. Resp. 8–12.
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`We address each of the claim terms identified by the parties in turn.
`
`1. “generating an initial plasma and excited ions
`from a volume of feed gas”
`
`All claims at issue require “generating an initial plasma and excited
`
`ions from a volume of feed gas.” Ex. 1101, 34:45–36:14. TSMC does not
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`propose an explicit construction for this claim limitation. In its Preliminary
`
`Response, Zond proposes that this claim limitation should be construed as
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`“[g]enerating both an initial plasma and excited atoms from the same
`
`volume of feed gas, wherein a feed gas is a gas that is a flowing gas.”
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`Prelim. Resp. 10.
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`Zond asserts that the recitation of a “volume of feed gas” requires that
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`both ionization and excitation occur in the same volume of feed gas, and that
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`“feed gas” implies a flow of gas. Prelim. Resp. 9. The recitation of “feed
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`gas” in method claim 18 does not necessarily imply the flow of gas.
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`Certainly, the gas is provided, but claim 18 does not recite “feeding a gas,”
`
`for example. Construing the claim limitation as Zond suggests would be
`
`equivalent to adding a method step thereto, thus changing the scope of
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`claim 18.
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`Also, the Specification of the ’652 patent describes the use of in-line
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`gas valves 242, 244 that can control the flow of gas to the chamber
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`(Ex. 1101, 8:3–5), and also describes pulsing feed gases 234, 236 to help
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`generate excited atoms, including metastable atoms, in gap 212 (Ex. 1101,
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`8:3–5, 8:23–25). Such control of the feed gas supports the notion that “feed
`
`gas” does not necessitate a “gas that is a flowing gas.”
`
`The Specification of the ’652 patent also states that feed gases may be
`
`introduced from multiple locations into the chamber. See id. at 8:1–3.
`
`Having multiple sources for feed gases does not support a construction that
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`“a volume of feed gas” requires that the initial plasma and excited ions are
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`generated from the same volume of feed gas, assuming that a particular
`
`volume of feed gas may be identified in such a process. We are not
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`persuaded that the claim limitation “generating an initial plasma and excited
`
`ions from a volume of feed gas” needs to be explicitly construed at this stage
`
`of the proceeding.
`
`2. “transporting the initial plasma and excited atoms proximate to a
`cathode assembly”
`
`
`
`All claims at issue require “transporting the initial plasma and excited
`
`atoms proximate to a cathode assembly.” Ex. 1101, 34:45–36:14. TSMC
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`asserts that a plain reading of this limitation means “moving the initial
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`plasma and excited atoms from where they were generated to a location near
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`a cathode assembly.” Pet. 12. TSMC states that the Specification of the
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`’652 patent supports this construction because initial plasma and excited
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`atoms are generated in gap 212 or excited atom source 732b and moved to a
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`location near inner cathode 202a or 732a, respectively. Id. (citing Ex. 1101,
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`8:1–28, 108–17; 14:37–43; 17:63–18:9; 21:63–22:8; 27:15–20; Figs. 2, 3, 5,
`
`6, and 12). Zond asserts that this limitation should be construed to mean
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`“transporting the initial plasma and excited atoms to a region that is
`
`proximate to a cathode assembly.” Prelim. Resp. 10–11.
`
`
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`We observe that no meaningful difference exists between the parties’
`
`constructions as each party relies on the ordinary and customary meaning of
`
`the claim terms in this limitation. We are not persuaded, however, that this
`
`claim limitation needs an express construction at this stage of the
`
`proceeding.
`
`3. “super-ionizing the initial plasma proximate to the cathode assembly,
`thereby generating a high-density plasma”
`
`All claims at issue require “super-ionizing the initial plasma
`
`proximate to the cathode assembly, thereby generating a high-density
`
`plasma.” Ex. 1101, 34:45–36:14. TSMC notes that the Specification of the
`
`’652 patent explicitly defines “super-ionized” as “at least 75% of the neutral
`
`atoms in the plasma are converted [to ions].” Pet. 12 (citing Ex. 1101, 5:8–
`
`10). From this definition, TSMC concludes that the limitation should be
`
`construed as “converting at least 75% of the neutral atoms in the initial
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`plasma into ions near the cathode assembly.” Id.
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`Zond asserts that TSMC’s construction requiring the ionization in the
`
`initial plasma makes claim 18 indistinguishable from dependent claim 24.
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`Prelim. Resp. 11. Zond asserts that this claim limitation should be construed
`
`to mean “ionizing the plasma that is proximate to the cathode so that at least
`
`75% of the neutrals in the original feed gas have been converted to ions.”
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`Prelim. Resp. 12.
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`The claim limitation at issue requires “super-ionizing the initial
`
`plasma.” Ex. 1101, 8:51 (emphasis added). Zond’s construction does not
`
`reflect this claim language. Also, Zond’s construction introduces a term
`
`“original feed gas” that does not appear to be used or defined in the
`
`Specification of the ’652 patent; therefore, Zond’s construction introduces
`
`an unnecessary ambiguity into the construction. TSMC’s proposed
`
`construction reflects the explicit definition of “super-ionized” provided in
`
`the ’652 patent Specification. Therefore, we construe the claim limitation as
`
`“converting at least 75% of the neutral atoms in the initial plasma into ions
`
`near the cathode assembly.”
`
`B. Principles of Law
`
`A patent claim is unpatentable under 35 U.S.C. § 103(a) if the
`
`differences between the claimed subject matter and the prior art are such that
`
`the subject matter, as a whole, would have been obvious at the time the
`
`invention was made to a person having ordinary skill in the art to which said
`
`subject matter pertains. KSR Int’l Co. v. Teleflex Inc., 550 U.S. 398, 406
`
`(2007). The question of obviousness is resolved on the basis of underlying
`
`factual determinations including: (1) the scope and content of the prior art;
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`(2) any differences between the claimed subject matter and the prior art;
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`(3) the level of ordinary skill in the art; and (4) objective evidence of
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`nonobviousness. Graham v. John Deere Co., 383 U.S. 1, 17–18 (1966).
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`In that regard, an obviousness analysis “need not seek out precise
`
`teachings directed to the specific subject matter of the challenged claim, for
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`a court can take account of the inferences and creative steps that a person of
`
`ordinary skill in the art would employ.” KSR, 550 U.S. at 418; see
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`Translogic, 504 F.3d at 1259. A prima facie case of obviousness is
`
`established when the prior art itself would appear to have suggested the
`
`claimed subject matter to a person of ordinary skill in the art. In re Rinehart,
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`531 F.2d 1048, 1051 (CCPA 1976). The level of ordinary skill in the art is
`
`reflected by the prior art of record. See Okajima v. Bourdeau, 261 F.3d
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`1350, 1355 (Fed. Cir. 2001); In re GPAC Inc., 57 F.3d 1573, 1579 (Fed. Cir.
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`1995); In re Oelrich, 579 F.2d 86, 91 (CCPA 1978).
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`We analyze the asserted grounds of unpatentability in accordance with
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`the above-stated principles.
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`C. Claims 18–30, 33, and 34 – Obviousness over Mozgrin,
`Kudryavtsev, Fahey, and Iwamura
`
`TSMC asserts that claims 18–30, 33, and 34 are unpatentable under
`
`35 U.S.C. § 103(a) as obvious over the combination of Mozgrin,
`
`Kudryavtsev, Fahey, and Iwamura. Pet. 20–41. As support, TSMC
`
`provides detailed explanations as to how each claim limitation is met by the
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`references and rationales for combining the references, as well as a
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`declaration of Dr. Uwe Kortshagen (Ex. 1102). Id. Zond responds that the
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`combination of Mozgrin, Kudryavtsev, Fahey, and Iwamura does not
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`disclose every claim element. Prelim. Resp. 13–25.
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`We have reviewed the parties’ contentions and supporting evidence.
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`Given the evidence on this record, we determine that TSMC has
`
`demonstrated a reasonable likelihood of prevailing on its assertion that
`
`claims 18–30, 33, and 34 are unpatentable over the combination of Mozgrin,
`
`Kudryavtsev, Fahey, and Iwamura. Our discussion focuses on the
`
`deficiencies alleged by Zond as to the claims.
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`Mozgrin
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`
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`Mozgrin discloses experimental research conducted on high-current
`
`low-pressure quasi-stationary discharge in a magnetic field. Ex. 1103, 400,
`
`Title, right col. In Mozgrin, pulse or quasi-stationary regimes are discussed
`
`in light of the need for greater discharge power and plasma density. Id.
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`Mozgrin teaches experiments are conducted using a discharge device
`
`configuration having cathode 1, anode 2 adjacent and parallel to the cathode,
`
`and magnetic system 3, as shown in Figure 1(a). Id. at 401. The cathode,
`
`which includes a sputtering target, is placed on a cooled surface. Id. at 401,
`
`left col.; 402, right col.
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`
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`Figure 2 of Mozgrin illustrates a discharge (power) supply unit. The
`
`supply unit includes a pulsed discharge supply unit and a system for pre-
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`ionization. Id. at 401, left col. For pre-ionization, a stationary magnetron
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`discharge was used. Id. In this pre-ionization regime, the initial plasma
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`density was in the 109 and 1011 cm-3. Id. Various gasses are used in the
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`Mozgrin system in the discharge regimes. Id. at 400, right col.; 401, left col.
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`Figure 3(b) is reproduced below.
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`
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`Figure 3(b) of Mozgrin illustrates an oscillogram of voltage of the quasi-
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`stationary discharge over time. Id. at 402. In Figure 3(b), Part 1 represents
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`the voltage of the stationary discharge (pre-ionization stage); Part 2 displays
`
`the square voltage pulse application to the gap (Part 2a), where the plasma
`
`density grows and reaches its quasi-stationary value (Part 2b); and Part 3
`
`displays the discharge current growing and attaining its quasi-stationary
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`value. Id. at 402, right col. More specifically, the power supply generates a
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`square voltage with rise times (leading edge) of 5–60 μs and durations of as
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`much as 1.5 ms. Id. at 401, right col.
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`
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`In regime 2, the plasma density exceed 2 x 1013 cm-3 and in regime 3
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`the plasma density produces large-volume, uniform, dense plasmas
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`η1 ᴝ 1.5 x 1015 cm-3. Id. at 409, left col.
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`Kudryavtsev
`
`Kudryavtsev discloses a multi-step ionization plasma process,
`
`comprising the steps of exciting the ground state atoms to generate excited
`
`atoms, and then ionizing the excited atoms. Ex. 1106, Abs., Figs. 1, 6.
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`Figure 1 of Kudryavtsev illustrates the atomic energy levels during the
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`slow and fast stages of ionization. Figure 1 of Kudryavtsev is reproduced
`
`below (with annotations added by TSMC (Pet. 17)):
`
`
`
`As shown in Figure 1 of Kudryavtsev, ionization occurs with a “slow
`
`stage” (Fig. 1a) followed by a “fast stage” (Fig. 1b). During the initial slow
`
`stage, direct ionization provides a significant contribution to the generation
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`of plasma ions (arrow Γ1e showing ionization (top line labeled “e”) from the
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`ground state (bottom line labeled “1”)). Dr. Kortshagen explains that
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`Kudryavtsev shows the rapid increase in ionization once multi-step
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`ionization becomes the dominant process. Ex. 1102 ¶ 56; Pet. 18–19.
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`Indeed, Kudryavtsev discloses:
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`For nearly stationary n2 [excited atom density] values . . . there
`is an explosive increase in ne [plasma density]. The subsequent
`increase in ne then reaches its maximum value, equal to the rate
`of excitation . . . which is several orders of magnitude greater
`than the ionization rate during the initial stage.
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`Ex. 1106, 31, right col., ¶ 6 (emphasis added). Kudryavtsev also recognizes
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`that “in a pulsed inert-gas discharge plasma at moderate pressures . . . [i]t is
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`shown that the electron density increases explosively in time due to
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`accumulation of atoms in the lowest excited states.” Id. at 30, Abs., Fig. 6.
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`16
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`Fahey
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`Fahey discloses a high-flux beam source that produces a beam of
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`helium, neon, and argon metastable atoms. Ex. 1105, Abs. Figure 1,
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`reproduced below, shows a beam source schematic showing Pyrex tube (A),
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`boron nitride nozzle (B), skimmer (C), and needle or needle array (D). Id. at
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`381, right col.
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`Figure 1 above shows a source that produces a low-voltage discharge
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`between a sharp needle D, which is a cathode maintained at a negative
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`potential, and cone-shaped skimmer electrode C, which is kept at ground
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`potential. Id. at 381, right col., ¶ 4; 382, left col., ¶ 2. The skimmer piece C
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`is attached with an aluminum gasket to a vacuum wall to allow differential
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`pumping of the source. Id. at 382, left col., ¶ 1. For all diagnostic
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`measurements, a set of parallel sweep plates, maintained at an adequate
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`voltage, is mounted after the skimmer to keep the beam free of charged
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`species. Id. at 382, left col., ¶ 5. The source can provide very stable thermal
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`17
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`energy beams of helium, neon, and argon metastable atoms. Id. at 381, right
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`col., ¶ 3.
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`Iwamura
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`Iwamura discloses a plasma treatment apparatus for generating a
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`stable plasma with a multi-step ionization process to treat a semiconductor
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`wafer. Ex. 1108, Abs., 6:67–7:8. Figure 9 of Iwamura, reproduced below
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`(with our annotations added), illustrates a plasma treatment apparatus.
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`As shown in Figure 9 of Iwamura, a first plasma generation unit is
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`located downstream from a pre-excitation unit along the flow path of the
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`gas, and the first plasma generation unit includes lower ion capture
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`electrode 80, which is formed from a wire grid or perforated metal sheet. Id.
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`at 11:51–55. The pre-excitation unit and first plasma generation unit
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`preactivate the gas, raising the excitation level of the ground state atoms and
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`generating a volume of metastable atoms. Id. at 2:34–39, 2:56–58. Ion
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`capture electrode 80 is connected to ground potential so as to trap electrons
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`18
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`and ions in the volume of metastable atoms. Id. The second plasma
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`generation unit, which includes electrodes 30, activates the gas to generate
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`plasma. Id. at 2:59–61, 8:4–9, 8:32–46.
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`
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`According to Iwamura, because the excitation level of the gas is raised
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`first, a uniform and stable plasma can be generated. Id. at 2:39–41 (“[T]he
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`generation of a plasma and formulation of activated gas species in the
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`downstream region is made easier and more uniform and stable.”), 8:32–37.
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`Consequently, the uniformity of the plasma density, as well as the yield of
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`the treatment of semiconductor wafer, can be improved. Id. at 2:46–50,
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`8:41–46.
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`“Generating an Initial Plasma and Excited Ions from a Volume of Feed Gas”
`and “Transporting the Initial Plasma and Excited Atoms Proximate
`to a Cathode Assembly”
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`
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`Zond asserts that the mere use of four references establishes an
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`improper hindsight analysis using claim 18 as a guide to reach an
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`obviousness conclusion. Prelim. Resp. 26. Zond also finds deficiencies in
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`the references for what each teaches alone (see Prelim. Resp. 27–30), but
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`does not address what the combination teaches. See KSR, 550 U.S. at 406
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`(stating determination of obviousness involves differences between claimed
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`subject matter and prior art such that subject matter, as a whole, would have
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`been obvious).
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`Zond’s arguments concerning the teachings of Iwamura rely on
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`Zond’s construction of the claim limitation “generating an initial plasma and
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`excited ions from a volume of feed gas” to require generating both an initial
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`plasma and excited atoms from the same volume of feed gas that is flowing.
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`19
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`Prelim. Resp. 27. As we indicated in our claim construction section above,
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`such a construction is not supported by the current record. See above at
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`Section III(A)(1).
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`
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`Zond’s argument with respect to the teachings of Fahey focuses on an
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`alleged teaching away from the limitations of “generating an initial plasma
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`and excited ions from a volume of feed gas” and “transporting the initial
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`plasma and excited atoms proximate to a cathode assembly” by the
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`statement that, for diagnostic measurements, the charged species were
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`removed from the beam after the skimmer. Prelim. Resp. 23–24, 27;
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`Ex. 1105, 382, right col., ¶ 4. This does not teach away from the fact that
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`Fahey’s source generates plasma containing charged species, such as
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`electrons and ions. Pet. 22–23; Ex. 1102 ¶ 64; Ex. 1105, Introduction
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`(describing metastable beam source, simplified by Fahey’s modifications,
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`which design employed a “weak, high-voltage corona discharge between a
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`sharp needle and a cone-shaped anode.”) (emphasis added). We are
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`persuaded, on this record, that Fahey’s beam source, which has substantially
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`the same structure as an embodiment in the ’652 patent, teaches generating
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`an initial plasma and excited atoms from a volume of feed gas. See Pet. 21–
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`23 (citing Ex. 1102 ¶¶ 64–65; Ex. 1105). Figure 12 of the ’652 patent and
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`Figure 1 of Fahey are reproduced below.
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`20
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`Figure 12 of the ’652 patent shows a cross-sectional view of the plasma
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`generating apparatus, and Figure 1 of Fahey shows a beam source.
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`“Super-Ionizing the Initial Plasma Proximate to the Cathode Assembly
`Thereby Generating a High-Density Plasma
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`
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`Zond asserts that Iwamura does not teach that the plasma in region B
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`(see Figure 9, above, at 18) is super-ionized to generate a high-density
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`plasma. Prelim. Resp. 30. TSMC, however, does not rely on a teaching
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`from Iwamura for super-ionization; TSMC relies on Mozgrin and
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`Kudryavtsev to suggest generating very high density plasma that either
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`implicitly or obviously disclose ionizing 75% of the feed gas provided to
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`Mozgrin. Pet. 45; see also id. at 46 (stating “Mozgrin and Kudryavtsev
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`teach the step of super-ionizing, including teaching desirability of achieving
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`high plasma density with multi-step ionization of a gas, such as argon, that
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`would be considered ‘super-ionized’”). TSMC relies on Iwamura for its
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`express statements of the desirability of providing an initial plasma with
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`excited atoms in a first step, followed by an energy-providing second step.
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`Id. at 45 (citing Ex. 1102 ¶¶ 74–86, 126), 47. We are persuaded, on this
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`record, that Mozgrin, Kudryavtsev, and Fahey suggest “super-ionizing the
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`21
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`initial plasma proximate to the cathode assembly thereby generating a high-
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`density plasma.” See Pet. 26–31; Ex. 1102 ¶¶ 76–86.
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`
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`We are persuaded that TSMC has demonstrated a reasonable
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`likelihood of prevailing on its assertion that claim 18 is unpatentable over
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`the combination of Mozgrin, Kudryavtsev, Fahey, and Iwamura.
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`Dependent Claims
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`
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`Zond specifically addresses TSMC’s arguments regarding the
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`obviousness of dependent claims 19, 21, 25, 27–28, 33, and 34. See Prelim.
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`Resp. 41–47. As to claim 19, Zond asserts that “Fahey applies his voltage
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`between the needle D and skimmer C in a region with no shown boundaries
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`or containment,” therefore, it is not clear that Fahey applies an electric field
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`across a volume of feed gas. Prelim. Resp. 45. As we have set forth in our
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`claim construction section above, we do not agree with Zond that “a volume
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`of feed gas” necessarily means the same or a single volume of feed gas. See
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`above at Sec. III(A)(1). Also, it is not clear that Fahey lacks containment of
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`a volume of gas. Fahey discusses using a pressure gradient to maintain the
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`discharge. Ex. 1105, 381, right col., ¶ 4. Specifically, Fahey states that
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`[t]he skimmer piece is attached with an aluminum gasket to a
`vacuum wall to allow differential pumping of the source. Gas
`is admitted to the glass tube by a micrometer leak valve
`mounted outside of the vacuum chamber. The source region is
`contained inside a 10 cm Corning Pyrex glass cross which is
`evacuated by a 300 1 s-1 oil diffusion pump, The reaction
`region is a 97 1 stainless-steel chamber in which the pressure is
`maintained below 1.3 X 10-4 Pa (10-6 Torr).
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`Id. at 382, left col., ¶ 1.
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`22
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`As to claim 21, Zond takes issue with TSMC’s statement that
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`“Fahey’s excited atom source produces the initial plasma and transports it to
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`Mozgrin[’s] chamber where Mozgrin super-ionizes the initial plasma”
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`because the combination of Fahey and Mozgrin is not an actua