EXHIBIT A.05
`U.S. Patent No. 7,147,759
`
`
`References cited herein:
`
`(cid:120) U.S. Patent No. 7,147,759 (“‘759 Patent”)
`
`(cid:120) D.V. Mozgrin, et al, High-Current Low-Pressure Quasi-Stationary Discharge in a
`Magnetic Field: Experimental Research, Plasma Physics Reports, Vol. 21, No. 5, 1995
`(“Mozgrin”)
`
`(cid:120) A. A. Kudryavtsev, et al, Ionization relaxation in a plasma produced by a pulsed inert-gas
`discharge, Sov. Phys. Tech. Phys. 28(1), January 1983 (“Kudryavtsev”)
`
`(cid:120) EP 1 113 088 (“Yamaguchi”)
`
`Claim 38
`
`[20pre.] A method of
`generating sputtering
`flux, the method
`comprising:
`
`
`[20a.] ionizing a feed
`gas to generate a
`weakly-ionized plasma
`proximate to a
`sputtering target;
`
`
`Mozgrin in view of Kudryavtsev and further in view of
`Yamaguchi
`The combination of Mozgrin with Kudryavtsev discloses a method
`of generating sputtering flux.
`See evidence cited in limitation [1pre] of claim 1.
`Mozgrin at 403, right col, ¶ 4 (“Regime 2 was characterized by
`intense cathode sputtering…”).
`The combination of Mozgrin with Kudryavtsev discloses ionizing a
`feed gas to generate a weakly-ionized plasma proximate to a
`sputtering target.
`See evidence cited in limitation [1c] of claim 1.
`‘759 Patent at 6:30-32 (“The weakly-ionized plasma is also referred
`to as a pre-ionized plasma.”)
`‘759 Patent at claim 32 (“wherein the peak plasma density of the
`weakly-ionized plasma is less than about 1012 cm(cid:1956)3”)
`Mozgrin at Fig. 2
`Mozgrin at 402, right col, ¶2 (“Figure 3 shows typical voltage and
`current oscillograms.… Part I in the voltage oscillogram represents
`the voltage of the stationary discharge (pre-ionization stage).”)
`Mozgrin at 401, right col, ¶2 (“[f]or pre-ionization, we used a
`stationary magnetron discharge; … provided the initial plasma
`density in the 109 – 1011 cm(cid:1956)3 range.”)
`Mozgrin at 400, right col, ¶ 3 (“We investigated the discharge
`regimes in various gas mixtures at 10-3 – 10 torr…”)
`Mozgrin at 402, ¶ spanning left and right cols (“We studied the
`high-current discharge in wide ranges of discharge current…and
`operating pressure…using various gases (Ar, N2, SF6, and H2) or
`
`ActiveUS 122345135v.1
`
`1
`
`TSMC-1228
`TSMC v. Zond, Inc.
`Page 1 of 5
`
`

`

`
`
`Claim 38
`
`[20b.] generating a
`magnetic field
`proximate to the
`weakly-ionized plasma,
`the magnetic field
`substantially trapping
`electrons in the weakly-
`ionized plasma
`proximate to the
`sputtering target; and
`
`
`[20c.] applying a
`voltage pulse to the
`weakly-ionized plasma,
`an amplitude and a rise
`time of the voltage pulse
`being chosen to increase
`an excitation rate of
`ground state atoms that
`are present in the
`weakly-ionized plasma
`to create a multi-step
`ionization process that
`generates a strongly-
`ionized plasma, which
`comprises ions that
`sputter target material,
`from the weakly-ionized
`
`EXHIBIT A.05
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev and further in view of
`Yamaguchi
`their mixtures of various composition…”)
`Mozgrin at 403, right col, ¶ 4 (“Regime 2 was characterized by
`intense cathode sputtering…”).
`The combination of Mozgrin with Kudryavtsev discloses
`generating a magnetic field proximate to the weakly-ionized
`plasma, the magnetic field substantially trapping electrons in the
`weakly-ionized plasma proximate to the sputtering target.
`‘759 Patent at 3:10-12 (“Fig. 1 shows a cross-sectional view of a
`known magnetron sputtering apparatus 100…”)
`‘759 Patent at 4:4-10 (“The electrons, which cause ionization, are
`generally confined by the magnetic fields produced by the magnet
`126. The magnetic confinement is strongest in a confinement
`region 142….”)
`Mozgrin at 401, left col, ¶ 1 (“The electrodes were immersed in a
`magnetic field of annular permanent magnets.”)
`Mozgrin at 401, right col, ¶2 (“We found out that only the regimes
`with magnetic field strength not lower than 400 G provided the
`initial plasma density in the 109-1011 cm-3 range.”)
`Mozgrin at 407, left col, ¶ 3 (“The action of the magnetic field
`serves only to limit the electron thermal conductivity and to provide
`collisions sufficient for efficient energy transfer from electrons to
`heavy particles.”)
`The combination of Mozgrin with Kudryavtsev discloses applying
`a voltage pulse to the weakly-ionized plasma, an amplitude and a
`rise time of the voltage pulse being chosen to increase an excitation
`rate of ground state atoms that are present in the weakly-ionized
`plasma to create a multi-step ionization process that generates a
`strongly-ionized plasma, which comprises ions that sputter target
`material, from the weakly-ionized plasma, the multi-step ionization
`process comprising exciting the ground state atoms to generate
`excited atoms, and then ionizing the excited atoms within the
`weakly-ionized plasma without forming an arc discharge.
`‘759 Patent, claim 33 (“wherein the peak plasma density of the
`strongly-ionized plasma is greater than about 1012 cm(cid:1956)3”)
`Mozgrin at Figs. 1, 2, 3
`Mozgrin at 402, right col, ¶ 2 (“Part 1 in the voltage oscillogram
`represents the voltage of the stationary discharge (pre-ionization
`stage).”)
`
`ActiveUS 122345135v.1
`
`2
`
`TSMC-1228 / Page 2 of 5
`
`

`

`
`
`Claim 38
`
`plasma, the multi-step
`ionization process
`comprising exciting the
`ground state atoms to
`generate excited atoms,
`and then ionizing the
`excited atoms within the
`weakly-ionized plasma
`without forming an arc
`discharge.
`
`
`EXHIBIT A.05
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev and further in view of
`Yamaguchi
`Mozgrin at 401, right col, ¶ 1 (“Thus, the supply unit was made
`providing square voltage and current pulses with [rise] times
`(leading edge) of 5 – 60 μs…”)
`Mozgrin at 401, right col, ¶2 (“For pre-ionization … the initial
`plasma density in the 109 – 1011 cm-3 range.”)
`Mozgrin at 409, left col, ¶ 4 (“The implementation of the high-
`current magnetron discharge (regime 2) in sputtering … plasma
`density (exceeding 2x1013 cm(cid:1956)3).”)
`Mozgrin at 403, right col, ¶4 (“Regime 2 was characterized by
`intense cathode sputtering…”)
`Mozgrin at 401, ¶ spanning left and right columns (“Designing the
`[pulsed supply] unit, we took into account the dependences which
`had been obtained in [Kudryavtsev] of ionization relaxation on pre-
`ionization parameters, pressure, and pulse voltage amplitude.”)
`Mozgrin at 400, left col, ¶ 3 (“Some experiments on magnetron
`systems of various geometry showed that discharge regimes which
`do not transit to arcs can be obtained even at high currents.”)
`Mozgrin at 404, left col, ¶ 3 (“The parameters of the shaped-
`electrode discharge…transit to arc regime 4, could be well
`determined… The point of the planar-magnetron discharge transit
`to the arc regime was determined by discharge voltage and
`structure changes...”)
`Kudryavtsev at Figs. 1, 6
`Kudryavtsev at 34, right col, ¶ 4 (“Since the effects studied in this
`work are characteristic of ionization whenever a field is suddenly
`applied to a weakly ionized gas, they must be allowed for when
`studying emission mechanisms in pulsed gas lasers, gas breakdown,
`laser sparks, etc.”)
`Kudryavtsev at 31, right col, ¶ 7 (“The behavior of the increase in
`ne with time thus enables us to arbitrarily divide the ionization
`process into two stages, which we will call the slow and fast growth
`stages. Fig. 1 illustrates the relationships between the main
`electron currents in terms of the atomic energy levels during the
`slow and fast stages.”)
`Kudryavtsev at 31, right col, ¶ 6 (“For nearly stationary n2 [excited
`atom density] values … there is an explosive increase in ne [plasma
`density]. The subsequent increase in ne then reaches its maximum
`value, equal to the rate of excitation [equation omitted], which is
`several orders of magnitude greater than the ionization rate
`
`ActiveUS 122345135v.1
`
`3
`
`TSMC-1228 / Page 3 of 5
`
`

`

`
`
`Claim 38
`
`38. The method of claim
`20 wherein the ionizing
`the feed gas comprises
`exposing the feed gas to
`an electrode that is
`adapted to emit
`electrons.
`
`
`EXHIBIT A.05
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev and further in view of
`Yamaguchi
`
`during the initial stage.”)
`Because Mozgrin applies voltage pulses that “suddenly generate an
`electric field,” one of ordinary skill reading Mozgrin would have
`been motivated to consider Kudryavtsev to better understand the
`effects of applying Mozgrin’s pulse.
`If one of ordinary skill building a system according to Mozgrin did
`not experience Kudryavtsev’s “explosive increase” in plasma
`density, it would have been obvious to adjust the operating
`parameters, e.g., increase the pulse length and/or pressure, so as to
`trigger Kudryavtsev’s fast stage of ionization. One of ordinary skill
`would have been motivated to use Kudryavtsev’s fast stage of
`ionization in Mozgrin so as to increase plasma density and thereby
`increase the sputtering rate. Further, use of Kudryavtsev’s fast
`stage in Mozgrin would have been a combination of old elements
`that in which each element performed as expected to yield
`predictable results of increasing plasma density and multi-step
`ionization. Finally, because Mozgrin’s pulse, or the pulse used in
`the combination of Mozgrin and Kudryavtsev, produced
`Kudryavtsev’s fast stage of ionization, the rise time and amplitude
`of the pulse result in increasing the ionization rate of excited atoms
`and creation of a multi-step ionization process.
`The combination of Mozgrin with Kudryavtsev and Yamaguchi
`discloses the ionizing the feed gas comprises exposing the feed gas
`to an electrode that is adapted to emit electrons.
`See claim evidence cited in claim 20.
`‘759 Patent at 19:7-8 (“The heated electrode 452(cid:398) emits electrons
`in the area 245(cid:398).”).
`‘759 Patent at 19:65-67 (“In yet another embodiment, the electrode
`452'' is heated to emit electrons proximate to the cathode assembly
`216 of FIG. 11.”).
`Mozgrin at 409, left col, ¶ 4 (“The implementation of the high-
`current magnetron discharge (regime 2) in sputtering or layer
`deposition technologies provides an enhancement in the flux of
`deposited materials and plasma density…”).
`Mozgrin at 409, left col, ¶ 4 (“it can enhance the … homogeneity of
`deposited layers …e.g. by choosing the exposure time that is less
`than either the time characteristic for heat transfer in a treated
`material…this makes it possible to dictate the thermal regime for
`treated material surfaces including non-heat-resistant ones.”).
`
`ActiveUS 122345135v.1
`
`4
`
`TSMC-1228 / Page 4 of 5
`
`

`

`EXHIBIT A.05
`U.S. Patent No. 7,147,759
`
`Mozgrin in view of Kudryavtsev and further in view of
`Yamaguchi
`Using a heating element to emit electrons and ionize a feed gas was
`well known to one of ordinary skill in the art in the field of
`sputtering. Such use merely constitutes combining well-known
`prior art elements according to known methods to yield predictable
`results.
`Yamaguchi at ¶ [0026] (“introducing … a sputtering discharge gas,
`such as a rare gas…at the center of an ionizing space.”).
`Yamaguchi at ¶ [0027] (emphasis added) (“The ionizing
`mechanism 6, which is of a hot cathode type using Penning
`ionization, ionizes sputtering ions by hitting thermoelectrons,
`emitted from a hot electrode against ... sputtering discharge gas
`particles…”).
`It would have been obvious for one of ordinary skill to combine
`Mozgrin with Yamaguchi. Mozgrin teaches region 2 is useful for
`sputtering. Mozgrin at 409, left col, ¶ 3 (“The implementation of
`the high-current magnetron discharge (regime 2) in sputtering or
`layer deposition technologies provides an enhancement in the flux
`of deposited materials and plasma density…”). Specifically,
`Mozgrin teaches that “it can enhance the … homogeneity of
`deposited layers …e.g. by choosing the exposure time that is less
`than either the time characteristic for heat transfer in a treated
`material…this makes it possible to dictate the thermal regime for
`treated material surfaces including non-heat-resistant ones.”
`Mozgrin at 409, left col, ¶ 4.
`Yamaguchi’s objects of the invention are similarly to provide
`uniform coverage and prevent substrate heating. Yamaguchi at ¶¶
`[0012]-[0013]. (“It is an object of the present invention … to form
`a film at a high bottom coverage ratio…”; “It is another object of
`the present invention to provide a film forming method…and
`apparatus which can prevent substrate temperature from
`increasing.”).
`Also, a combination of Yamaguchi’s electron emitting electrode
`with Mozgrin would be a combination of known elements in which
`each element performed as expected.
`
`Claim 38
`
`
`
`
`
`ActiveUS 122345135v.1
`
`5
`
`TSMC-1228 / Page 5 of 5
`
`