EXHIBIT C.09
`U.S. Patent No. 7,811,421
`
`References cited herein:
`(cid:120) U.S. Pat. No. 7,811,421 (“’421 Patent”)
`
`(cid:120) U.S. Pat. No. 6,413,382 (“Wang”)
`
`‘421 Claims 1, 2, 8, 10-13, 16, 17, 22-25,
`28-30, 33, 34, 39, 42, 43 and 46-48
`
`Wang
`
`[1pre]. A sputtering source comprising: Wang discloses a sputtering source.
`
`Wang at Title (“pulsed sputtering with a small
`rotating magnetron”)
`
`[1a] a) a cathode assembly comprising a
`sputtering target that is positioned
`adjacent to an anode; and
`
`Wang discloses a cathode assembly comprising a
`sputtering target that is positioned adjacent to an
`anode.
`
`‘421 Patent at 3:39-4:2 (“FIG. 1 illustrates a
`cross-sectional view of a known magnetron
`sputtering apparatus 100 having a pulsed power
`source 102. … The magnetron sputtering
`apparatus 100 also includes a cathode assembly
`114 having a target 116. … An anode 130 is
`positioned in the vacuum chamber 104 proximate
`to the cathode assembly 114.”)
`
`Wang at 3:66-4:1 (“A grounded shield 24 … acts
`as a grounded anode for the cathode of the
`negatively biased target 14.”)
`
`Wang discloses a power supply that generates a
`voltage pulse between the anode and the cathode
`assembly that creates a weakly-ionized plasma
`and then a strongly-ionized plasma from the
`weakly-ionized plasma without an occurrence of
`arcing between the anode and the cathode
`assembly, an amplitude, a duration and a rise time
`of the voltage pulse being chosen to increase a
`density of ions in the strongly-ionized plasma
`
`Wang at Figs. 1, 6 and 7
`
`Wang at 7:58-61 (“… DC power supply 100 is
`connected to the target 14 … and supplies an
`essentially constant negative voltage to the target
`14 corresponding to the background power PB.”)
`
`[1b] b) a power supply that generates a
`voltage pulse between the anode and the
`cathode assembly that creates a weakly-
`ionized plasma and then a strongly-
`ionized plasma from the weakly-ionized
`plasma without an occurrence of arcing
`between the anode and the cathode
`assembly, an amplitude, a duration and a
`rise time of the voltage pulse being
`chosen to increase a density of ions in the
`strongly-ionized plasma.
`
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`EXHIBIT C.09
`U.S. Patent No. 7,811,421
`‘421 Claims 1, 2, 8, 10-13, 16, 17, 22-25,
`28-30, 33, 34, 39, 42, 43 and 46-48
`
`Wang
`
`Wang at 7:61-62 (“The pulsed DC power supply
`80 produces a train of negative voltage pulses.”)
`
`Wang at 3:66-4:1 (“A grounded shield 24 … acts
`as a grounded anode for the cathode of the
`negatively biased target 14.”)
`
`Wang at 7:17-31 (“The background power level
`PB is chosen to exceed the minimum power
`necessary to support a plasma... [T]he application
`of the high peak power PP quickly causes the
`already existing plasma to spread and increases
`the density of the plasma.”)
`
`Wang at 7:19-25 (“Preferably, the peak power PP
`is at least 10 times the background power PB …
`and most preferably 1000 times to achieve the
`greatest effect of the invention. A background
`power PB of 1 kW [causes] little if any actual
`sputter deposition.”)
`
`Wang at 7:31-39 (“In one mode of operating the
`reactor, during the background period, little or no
`target sputtering is expected. The SIP reactor is
`advantageous for a low-power, low-pressure
`background period since the small rotating SIP
`magnetron can maintain a plasma at lower power
`and lower pressure than can a larger stationary
`magnetron. However, it is possible to combine
`highly ionized sputtering during the pulses with
`significant neutral sputtering during the
`background period.”)
`
`Wang at 7:3-6 (“Plasma ignition, particularly in
`plasma sputter reactors, has a tendency to
`generate particles during the initial arcing, which
`may dislodge large particles from the target or
`chamber.”)
`
`Wang at 7:13-28 (“Accordingly, it is
`advantageous to use a target power waveform
`illustrated in FIG. 6… As a result, once the
`plasma has been ignited at the beginning of
`
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`EXHIBIT C.09
`U.S. Patent No. 7,811,421
`‘421 Claims 1, 2, 8, 10-13, 16, 17, 22-25,
`28-30, 33, 34, 39, 42, 43 and 46-48
`
`Wang
`
`sputtering prior to the illustrated waveform…”)
`
`Wang at 7:47-49 (“The initial plasma ignition
`needs be performed only once and at much lower
`power levels so that particulates produced by
`arcing are much reduced.”)
`
`Wang at 7:28-30 (“…the application of the high
`peak power PP instead quickly causes the already
`existing plasma to spread and increases the
`density of the plasma”)
`
`Wang at 5:23-26 (“The illustrated pulse form is
`idealized. Its exact shape depends on the design
`of the pulsed DC power supply 80, and significant
`rise times and fall times are expected.”)
`Wang discloses the strongly ionized plasma at
`least partially converts neutral sputtered atoms
`into positive ions in order to enhance the
`sputtering process with ionized physical vapor
`deposition.
`
`Wang at 1:5-7 (“invention relates to sputtering
`apparatus and a method capable of producing a
`high fraction of ionized sputter particles.”)
`
`Wang at 1:34-37(“[a]s a result of the high-density
`plasma, a large fraction of the sputtered metal
`atoms passing through the argon plasma are
`ionized and thus can be electrically attracted to
`the biased wafer support.”)
`
`Wang at 2:33-36 (“Particularly at the high
`ionization fraction, the ionized sputtered metal
`atoms are attracted back to the targets and sputter
`yet further metal atoms.”)
`
`Wang discloses a magnet that is positioned to
`generate a magnetic field proximate to the
`weakly-ionized plasma, the magnetic field
`substantially trapping electrons in the weakly-
`ionized plasma proximate to the sputtering target.
`
`2. The sputtering source of claim 1
`wherein the strongly ionized plasma at
`least partially converts neutral sputtered
`atoms into positive ions in order to
`enhance the sputtering process with
`ionized physical vapor deposition.
`
`8. The sputtering source of claim 1 further
`comprising a magnet that is positioned to
`generate a magnetic field proximate to the
`weakly-ionized plasma, the magnetic
`field substantially trapping electrons in
`the weakly-ionized plasma proximate to
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`EXHIBIT C.09
`U.S. Patent No. 7,811,421
`‘421 Claims 1, 2, 8, 10-13, 16, 17, 22-25,
`28-30, 33, 34, 39, 42, 43 and 46-48
`
`Wang
`
`the sputtering target.
`
`See evidence cited in claim 1
`
`‘421 Patent at 3:39-63 (FIG. 1 illustrates a cross-
`sectional view of a known magnetron sputtering
`apparatus 100 having a pulsed power source
`102….The magnet 126 shown in FIG. 1…)
`
`‘421 Patent at 4:31-34 [describing the prior art
`Fig. 1] (“The electrons, which cause ionization,
`are generally confined by the magnetic fields
`produced by the magnet 126. The magnetic
`confinement is strongest in a confinement region
`142….”)
`
`Wang at 4:23-27 (“[a] small rotatable magnetron
`40 is disposed in the back of the target 14 to
`create a magnetic field near the face of the target
`14 which traps electrons from the plasma to
`increase the electron density.”)
`
`Wang at Fig. 1
`
`Wang discloses the power supply generates a
`constant power.
`
`See evidence cited in claim 1
`
`Wang at Figs. 1, 6, and 7
`
`Wang discloses the power supply generates a
`constant voltage.
`
`See evidence cited in claim 1
`
`Wang at 7:61-62 (“pulsed DC power supply 80
`produces a train of negative voltage pulses.”)
`
`Wang discloses a rise time of the voltage pulse is
`chosen to increase an ionization rate of the
`strongly-ionized plasma.
`
`See evidence cited in claim 1
`
`Wang discloses a distance between the anode and
`the cathode assembly is chosen to increase an
`- 4 -
`
`10. The sputtering source of claim 1
`wherein the power supply generates a
`constant power.
`
`11. The sputtering source of claim 1
`wherein the power supply generates a
`constant voltage.
`
`12. The sputtering source of claim 1
`wherein a rise time of the voltage pulse is
`chosen to increase an ionization rate of
`the strongly-ionized plasma.
`
`13. The sputtering source of claim 1
`wherein a distance between the anode and
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`EXHIBIT C.09
`U.S. Patent No. 7,811,421
`‘421 Claims 1, 2, 8, 10-13, 16, 17, 22-25,
`28-30, 33, 34, 39, 42, 43 and 46-48
`
`Wang
`
`the cathode assembly is chosen to
`increase an ionization rate of strongly-
`ionized plasma.
`
`ionization rate of strongly-ionized plasma.
`
`See evidence cited in claim 1
`
`16. The sputtering source of claim 1
`wherein a pulse width of the voltage pulse
`is in the range of approximately 0.1 μsec
`to 100 sec.
`
`Wang discloses a pulse width of the voltage pulse
`is in the range of approximately 0.1 μsec to 100
`sec.
`
`See evidence cited in claim 1
`
`Wang at 5:43-49 (“The choice of pulse widths (cid:306)w
`is dictated by considerations of both power supply
`design, radio interference, and sputtering process
`conditions. Typically, it should be at least 50 μs in
`this embodiment. Its upper limit is dictated mostly
`by the pulse repetition period (cid:306)p, but it is
`anticipated that for most applications it will be
`less than 1 ms, and typically less than 200 μs is
`for achieving the greatest effect.”)
`
`[17pre]. A sputtering source comprising: Wang discloses a sputtering source.
`
`See evidence cited in claim 1 preamble
`
`[17a] a) a cathode assembly comprising a
`sputtering target that is positioned
`adjacent to an anode;
`
`Wang discloses a cathode assembly comprising a
`sputtering target that is positioned adjacent to an
`anode.
`
`See evidence cited in claim [1a]
`
`[17b] b) a power supply that generates a
`voltage pulse between the anode and the
`cathode assembly that creates a weakly-
`ionized plasma and then a strongly-
`ionized plasma from the weakly-ionized
`plasma without an occurrence of arcing
`between the anode and the cathode
`assembly, an amplitude and a rise time of
`the voltage pulse being chosen to increase
`a density of ions in the strongly-ionized
`plasma; and
`
`Wang discloses a power supply that generates a
`voltage pulse between the anode and the cathode
`assembly that creates a weakly-ionized plasma
`and then a strongly-ionized plasma from the
`weakly-ionized plasma without an occurrence of
`arcing between the anode and the cathode
`assembly, an amplitude and a rise time of the
`voltage pulse being chosen to increase a density
`of ions in the strongly-ionized plasma.
`
`See evidence cited in claim [1b]
`
`[17c] c) a substrate support that is
`positioned adjacent to the sputtering
`
`Wang discloses a substrate support that is
`positioned adjacent to the sputtering target.
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`EXHIBIT C.09
`U.S. Patent No. 7,811,421
`‘421 Claims 1, 2, 8, 10-13, 16, 17, 22-25,
`28-30, 33, 34, 39, 42, 43 and 46-48
`
`Wang
`
`target; and
`
`Wang at 3:63-66 (“A pedestal electrode 18
`supports a wafer 20 to be sputter coated in planar
`opposition to the target 14 across a processing
`region 22.”)
`
`[17d] d) a bias voltage source having an
`output that is electrically plasma. coupled
`to the substrate support.
`
`Wang discloses a bias voltage source having an
`output that is electrically plasma. coupled to the
`substrate support.
`
`Wang at Fig. 1
`
`Wang at 4:32-34 (“[A]n RF bias power supply is
`connected to the pedestal electrode 18 to create a
`negative DC self-bias on the wafer 20”)
`
`22. The sputtering source of claim 17
`wherein the power supply generates a
`constant power.
`
`23. The sputtering source of claim 17
`wherein the power supply generates a
`constant voltage.
`
`Wang discloses the power supply generates a
`constant power.
`
`See evidence cited in claim 17
`
`See evidence cited in claim 10
`
`Wang discloses the power supply generates a
`constant voltage.
`
`See evidence cited in claim 17
`
`See evidence cited in claim 11
`
`24. The sputtering source of claim 17
`wherein a rise time of the voltage pulse is
`chosen to increase an ionization rate of
`the strongly-ionized plasma.
`
`25. The sputtering source of claim 17
`wherein a distance between the anode and
`the cathode assembly is chosen to
`increase an ionization rate of strongly-
`ionized plasma.
`
`Wang discloses a rise time of the voltage pulse is
`chosen to increase an ionization rate of the
`strongly-ionized plasma.
`
`See evidence cited in claim 17
`
`Wang discloses a distance between the anode and
`the cathode assembly is chosen to increase an
`ionization rate of strongly-ionized plasma.
`
`See evidence cited in claim 17
`
`28. The sputtering source of claim 17
`wherein a pulse width of the voltage pulse
`
`Wang discloses a pulse width of the voltage pulse
`is in the range of approximately 0.1 μsec to 100
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`EXHIBIT C.09
`U.S. Patent No. 7,811,421
`‘421 Claims 1, 2, 8, 10-13, 16, 17, 22-25,
`28-30, 33, 34, 39, 42, 43 and 46-48
`
`Wang
`
`is in the range of approximately 0.1 μsec
`to 100 sec.
`
`sec.
`
`See evidence cited in claim 17
`
`See evidence cited in claim 16
`
`29. The sputtering source of claim 17
`wherein a distance from the sputtering
`target to the substrate support is in the
`range of approximately 1 cm to 100 cm.
`
`Wang discloses a distance from the sputtering
`target to the substrate support is in the range of
`approximately 1 cm to 100 cm.
`
`See evidence cited in claim 17
`
`Chiang [incorporated by referenced in Wang] at
`12:66-13:7 (“[T]o achieve deeper hole coating
`with a partially neutral flux, it is desirable to
`increase the distance between the target 56 and
`the wafer 58, that is, to operate in the long-throw,
`the target-to-substrate spacing is greater than half
`the substrate diameter, preferably greater than
`wafer diameter, more preferably at least 80% of
`the substrate diameter, and most preferably least
`140% of the substrate diameter. The throws
`mentioned in the examples of the embodiment are
`referenced to 200 mm wafers.”)
`
`Wang at 7:22-25 (“A background power Ps of 1
`kW will typically be sufficient to support a
`plasma with the torpedo magnetron and a 200 mm
`wafer although with little if any actual sputter
`deposition.”)
`
`Wang discloses the bias voltage source comprises
`an RF power source.
`
`See evidence cited in claim 17
`
`Wang at 4:32-34 (“[A]n RF bias power supply is
`connected to the pedestal electrode 18 to create a
`negative DC self-bias on the wafer 20”)
`
`Wang discloses a magnet that is positioned to
`generate a magnetic field proximate to the
`weakly-ionized plasma, the magnetic field
`substantially trapping electrons in the weakly-
`
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`30. The sputtering source of claim 17
`wherein the bias voltage source comprises
`an RF power source.
`
`33. The sputtering source of claim 17
`further comprising a magnet that is
`positioned to generate a magnetic field
`proximate to the weakly-ionized plasma,
`the magnetic field substantially trapping
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`EXHIBIT C.09
`U.S. Patent No. 7,811,421
`‘421 Claims 1, 2, 8, 10-13, 16, 17, 22-25,
`28-30, 33, 34, 39, 42, 43 and 46-48
`
`Wang
`
`electrons in the weakly-ionized plasma
`proximate to the sputtering target.
`
`ionized plasma proximate to the sputtering target.
`
`See evidence cited in claim 17
`
`See evidence cited in claim 8
`
`[34pre]. A method for high deposition
`rate sputtering, the method comprising:
`
`Wang discloses a method for high deposition rate
`sputtering.
`
`Wang at Title (“pulsed sputtering with a small
`rotating magnetron”)
`
`Wang at 7:19-25 (“Preferably, the peak power PP
`is at least 10 times the background power Ps,
`more preferably at least 100 times, and most
`preferably 1000 times to achieve the greatest
`effect of the invention. A background power PB of
`1 kW will typically be sufficient to support a
`plasma with the torpedo magnetron and a 200 mm
`wafer although with little if any actual sputter
`deposition.”)
`
`Wang at 7:36-39 (“However, it is possible to
`combine highly ionized sputtering during the
`pulses with significant neutral sputtering during
`the background period.”)
`
`Wang discloses generating a voltage pulse
`between the anode and the cathode assembly
`comprising a sputtering target, the voltage pulse
`creating a weakly-ionized plasma and then a
`strongly-ionized plasma from the weakly-ionized
`plasma without an occurrence of arcing between
`the anode and the cathode assembly.
`
`See evidence cited in claim [1a]
`
`See evidence cited in claim [1b]
`
`[34a] a) generating a voltage pulse
`between the anode and the cathode
`assembly comprising a sputtering target,
`the voltage pulse creating a weakly-
`ionized plasma and then a strongly-
`ionized plasma from the weakly-ionized
`plasma without an occurrence of arcing
`between the anode and the cathode
`assembly; and
`
`[34b] b) adjusting an amplitude and a rise
`time of the voltage pulse to increase a
`density of ions in the strongly-ionized
`plasma.
`
`Wang discloses adjusting an amplitude and a rise
`time of the voltage pulse to increase a density of
`ions in the strongly-ionized plasma.
`
`See evidence cited in claim [1b]
`
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`EXHIBIT C.09
`U.S. Patent No. 7,811,421
`‘421 Claims 1, 2, 8, 10-13, 16, 17, 22-25,
`28-30, 33, 34, 39, 42, 43 and 46-48
`
`Wang
`
`39. The method of claim 34 wherein a
`pulse width of the voltage pulse is in the
`range of approximately 0.1 μsec to 100
`sec.
`
`42. The method of claim 34 further
`comprising applying a bias voltage to a
`substrate support that is positioned
`adjacent to the sputtering target.
`
`43. The method of claim 34 further
`comprising generating a magnetic field
`proximate to the sputtering target, the
`magnetic field trapping electrons
`proximate to the sputtering target.
`
`Wang discloses a pulse width of the voltage pulse
`is in the range of approximately 0.1 μsec to 100
`sec.
`
`See evidence cited in claim 34
`
`See evidence cited in claim 16
`
`Wang discloses applying a bias voltage to a
`substrate support that is positioned adjacent to the
`sputtering target.
`
`See evidence cited in claim 34
`
`Wang at Fig. 1
`
`Wang at 3:63-66 (“A pedestal electrode 18
`supports a wafer 20 to be sputter coated in planar
`opposition to the target 14 across a processing
`region 22.”)
`
`Wang discloses generating a magnetic field
`proximate to the sputtering target, the magnetic
`field trapping electrons proximate to the
`sputtering target.
`
`See evidence cited in claim 34
`
`See evidence cited in claim 8
`
`[46pre]. A sputtering source comprising: Wang discloses a sputtering source.
`
`See evidence cited in claim 1 preamble
`
`[46a] a) a cathode assembly comprising a
`sputtering target that is positioned
`adjacent to an anode; and
`
`Wang discloses a cathode assembly comprising a
`sputtering target that is positioned adjacent to an
`anode.
`
`See evidence cited in claim [1a]
`
`[46b] b) a power supply that generates a
`voltage pulse between the anode and the
`cathode assembly that creates a weakly-
`ionized plasma and then a strongly-
`ionized plasma from the weakly-ionized
`
`Wang discloses a power supply that generates a
`voltage pulse between the anode and the cathode
`assembly that creates a weakly-ionized plasma
`and then a strongly-ionized plasma from the
`weakly-ionized plasma without an occurrence of
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`EXHIBIT C.09
`U.S. Patent No. 7,811,421
`‘421 Claims 1, 2, 8, 10-13, 16, 17, 22-25,
`28-30, 33, 34, 39, 42, 43 and 46-48
`
`Wang
`
`plasma without an occurrence of arcing
`between the anode and the cathode
`assembly, an amplitude of the voltage
`pulse being chosen to increase a density
`of ions in the strongly-ionized plasma.
`
`arcing between the anode and the cathode
`assembly, an amplitude of the voltage pulse being
`chosen to increase a density of ions in the
`strongly-ionized plasma.
`
`See evidence cited in claim [1b]
`
`[47pre]. A sputtering source comprising: Wang discloses a sputtering source.
`
`See evidence cited in claim 1 preamble
`
`[47a] a) a cathode assembly comprising a
`sputtering target that is positioned
`adjacent to an anode; and
`
`Wang discloses a cathode assembly comprising a
`sputtering target that is positioned adjacent to an
`anode.
`
`[47b] b) a power supply that generates a
`voltage pulse between the anode and the
`cathode assembly that creates a weakly-
`ionized plasma and then a strongly-
`ionized plasma from the weakly-ionized
`plasma without an occurrence of arcing
`between the anode and the cathode
`assembly, a duration of the voltage pulse
`being chosen to increase a density of ions
`in the strongly-ionized plasma.
`
`See evidence cited in claim [1a]
`
`Wang discloses a power supply that generates a
`voltage pulse between the anode and the cathode
`assembly that creates a weakly-ionized plasma
`and then a strongly-ionized plasma from the
`weakly-ionized plasma without an occurrence of
`arcing between the anode and the cathode
`assembly, a duration of the voltage pulse being
`chosen to increase a density of ions in the
`strongly-ionized plasma.
`
`See evidence cited in claim [1b]
`
`[48a] 48. A sputtering source comprising: Wang discloses a sputtering source.
`
`See evidence cited in claim 1 preamble
`
`[48a] a) a cathode assembly comprising a
`sputtering target that is positioned
`adjacent to an anode; and
`
`Wang discloses a cathode assembly comprising a
`sputtering target that is positioned adjacent to an
`anode.
`
`[48b] b) a power supply that generates a
`voltage pulse between the anode and the
`cathode assembly that creates a weakly-
`ionized plasma and then a strongly-
`ionized plasma from the weakly-ionized
`plasma without an occurrence of arcing
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`See evidence cited in claim [1a]
`
`Wang discloses a power supply that generates a
`voltage pulse between the anode and the cathode
`assembly that creates a weakly-ionized plasma
`and then a strongly-ionized plasma from the
`weakly-ionized plasma without an occurrence of
`arcing between the anode and the cathode
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`EXHIBIT C.09
`U.S. Patent No. 7,811,421
`‘421 Claims 1, 2, 8, 10-13, 16, 17, 22-25,
`28-30, 33, 34, 39, 42, 43 and 46-48
`
`Wang
`
`between the anode and the cathode
`assembly, a rise time of the voltage pulse
`being chosen to increase a density of ions
`in the strongly-ionized plasma.
`
`assembly, a rise time of the voltage pulse being
`chosen to increase a density of ions in the
`strongly-ionized plasma.
`
`See evidence cited in claim [1b]
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