EXHIBIT C.01
`U.S. Patent No. 7,811,421
`
`
`References cited herein:
`(cid:120) U.S. Pat. No. 7,811,421 (“’421 Patent”)
`
`(cid:120) D.V. Mozgrin, et al, High-Current Low-Pressure Quasi-Stationary Discharge in a
`Magnetic Field: Experimental Research, Plasma Physics Reports, Vol. 21, No. 5, 1995
`(“Mozgrin”)
`
`(cid:120) Dennis M. Manos & Daniel L. Flamm, Plasma Etching: An Introduction, Academic Press
`1989 (“Manos”)
`
`
`
`‘421 Claims 1, 2, 8, 10, 11, 15,
`16, 34, 38, 39, 43 and 46-48
`
`[1pre]. A sputtering source
`comprising:
`
`[1a] a) a cathode assembly
`comprising a sputtering target
`that is positioned adjacent to
`an anode; and
`
`[1b] b) a power supply that
`generates a voltage pulse
`between the anode and the
`cathode assembly that creates a
`weakly-ionized plasma and
`then a strongly-ionized plasma
`from the weakly-ionized
`plasma without an occurrence
`of arcing between the anode
`and the cathode assembly, an
`
`
`ActiveUS 122645741v.1
`
`Mozgrin
`
`Mozgrin discloses a sputtering source.
`
`Mozgrin 403, right col, ¶4 (“Regime 2 was characterized by
`intense cathode sputtering…”)
`
`Mozgrin discloses a cathode assembly comprising a
`sputtering target that is positioned adjacent to an anode.
`
`‘421 Patent at 3:39-4:2 (“FIG. 1 illustrates a cross-sectional
`view of a known magnetron sputtering apparatus 100 having
`a pulsed power source 102. … The magnetron sputtering
`apparatus 100 also includes a cathode assembly 114 having a
`target 116. … An anode 130 is positioned in the vacuum
`chamber 104 proximate to the cathode assembly 114.”)
`
`Mozgrin at Fig. 1
`
`Mozgrin at 403, right col., ¶4 (“Regime 2 was characterized
`by an intense cathode sputtering….”)
`
`Mozgrin at 403, right col, ¶ 4 (“…The pulsed deposition rate
`of the cathode material…”)
`
`Mozgrin discloses a power supply that generates a voltage
`pulse between the anode and the cathode assembly that
`creates a weakly-ionized plasma and then a strongly-ionized
`plasma from the weakly-ionized plasma without an
`occurrence of arcing between the anode and the cathode
`assembly, an amplitude, a duration and a rise time of the
`voltage pulse being chosen to increase a density of ions in
`the strongly-ionized plasma.
`
`- 1 -
`
`TSMC-1017
`TSMC v. Zond, Inc.
`Page 1 of 8
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`

`

`
`
`‘421 Claims 1, 2, 8, 10, 11, 15,
`16, 34, 38, 39, 43 and 46-48
`
`amplitude, a duration and a
`rise time of the voltage pulse
`being chosen to increase a
`density of ions in the strongly-
`ionized plasma.
`
`
`ActiveUS 122645741v.1
`
`EXHIBIT C.01
`U.S. Patent No. 7,811,421
`
`Mozgrin
`
`‘421 Patent at Fig. 6
`
`‘421 Patent at 8:22-23 (“The weakly-ionized plasma is also
`referred to as a pre-ionized plasma.”)
`
`Mozgrin at Figs. 2, 3 and 7
`
`Mozgrin at 401, left col, ¶ 4 (“It was possible to form the
`high-current quasi-stationary regime by applying a square
`voltage pulse to the discharge gap which was filled up with
`either neutral or pre-ionized gas.”)
`
`Mozgrin at 402, right col, ¶2 (“Figure 3 shows typical
`voltage and current oscillograms.… Part I in the voltage
`oscillogram represents the voltage of the stationary discharge
`(pre-ionization stage).”)
`
`Mozgrin at 401, right col, ¶2 (“[f]or pre-ionization, we used
`a stationary magnetron discharge; … provided the initial
`plasma density in the 109 – 1011 cm(cid:1956)3 range.”)
`
`Mozgrin at 409, left col, ¶ 4 (“The implementation of the
`high-current magnetron discharge (regime 2) in sputtering …
`plasma density (exceeding 2x1013 cm-3).)”
`
`Mozgrin at 400, left col, ¶ 3 (“Some experiments on
`magnetron systems of various geometry showed that
`discharge regimes which do not transit to arcs can be
`obtained even at high currents.”)
`
`Mozgrin at 400, right col, ¶ 1 (“A further increase in the
`discharge currents caused the discharges to transit to the arc
`regimes…”)
`
`Mozgrin at 404, left col, ¶ 4 (“The parameters of the shaped-
`electrode discharge transit to regime 3, as well as the
`condition of its transit to arc regime 4, could be well
`determined for every given set of the discharge parameters.”)
`
`Mozgrin at 406, right col, ¶ 3 (“Moreover, pre-ionization
`was not necessary; however, in this case, the probability of
`discharge transferring to the arc mode increased.”)
`
`Mozgrin at 404, left col, ¶ 2 (“[t]he density turned out to be
`about 3 x 1012 cm-3 in the regime of Id = 60A and Ud = 900
`- 2 -
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`TSMC-1017 / Page 2 of 8
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`

`

`
`
`‘421 Claims 1, 2, 8, 10, 11, 15,
`16, 34, 38, 39, 43 and 46-48
`
`EXHIBIT C.01
`U.S. Patent No. 7,811,421
`
`Mozgrin
`
`V.”)
`
`Mozgrin at 403 left col, ¶ 4 (“[t]ransferring to regime 3, the
`discharge occupied a significantly larger cathode surface
`than in the stationary regime.”)
`
`Mozgrin at 404, right col, ¶ 2 (“The density ranged from (2 –
`2.5) x 1014 cm-3 at 360 - 540A current up to (1-1.5) x 1015
`cm-3 at 1100-1400 A current.”)
`
`Background:
`
`Manos at 231 (“…arcs… are a problem…”)
`
`Mozgrin discloses the strongly ionized plasma at least
`partially converts neutral sputtered atoms into positive ions
`in order to enhance the sputtering process with ionized
`physical vapor deposition.
`
`See evidence cited in claim 1
`
`Mozgrin at 406, left col, ¶ 1 (“We estimated the steady state
`average density of the cathode material atoms nc in the
`discharge plasma … (cid:533)g and (cid:533)e are ionization degrees of gas
`atoms and cathode material atoms, respectively”)
`
`Mozgrin at 406, right col, ¶ 1 (“[t]he [cathode material]
`fraction turned out to be about 30% and increased with
`ionization degree.”)
`
`Mozgrin discloses a magnet that is positioned to generate a
`magnetic field proximate to the weakly-ionized plasma, the
`magnetic field substantially trapping electrons in the weakly-
`ionized plasma proximate to the sputtering target.
`
`See evidence cited in claim 1
`
`‘421 Patent at 3:39-63 (FIG. 1 illustrates a cross-sectional
`view of a known magnetron sputtering apparatus 100 having
`a pulsed power source 102….The magnet 126 shown in FIG.
`1…)
`
`‘421 Patent at 4:31-34 [describing the prior art Fig. 1] (“The
`electrons, which cause ionization, are generally confined by
`the magnetic fields produced by the magnet 126. The
`- 3 -
`
`2. The sputtering source of
`claim 1 wherein the strongly
`ionized plasma at least
`partially converts neutral
`sputtered atoms into positive
`ions in order to enhance the
`sputtering process with ionized
`physical vapor deposition.
`
`8. The sputtering source of
`claim 1 further comprising a
`magnet that is positioned to
`generate a magnetic field
`proximate to the weakly-
`ionized plasma, the magnetic
`field substantially trapping
`electrons in the weakly-ionized
`plasma proximate to the
`sputtering target.
`
`
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`

`
`
`‘421 Claims 1, 2, 8, 10, 11, 15,
`16, 34, 38, 39, 43 and 46-48
`
`EXHIBIT C.01
`U.S. Patent No. 7,811,421
`
`Mozgrin
`
`magnetic confinement is strongest in a confinement region
`142….”)
`
`Mozgrin at Fig. 1
`
`Mozgrin at 401, left col, ¶ 1 (“The electrodes were immersed
`in a magnetic field of annular permanent magnets.”)
`
`Mozgrin at 401, right col, ¶2 (“We found out that only the
`regimes with magnetic field strength not lower than 400 G
`provided the initial plasma density in the 109-1011 cm-3
`range.”) (Ex. 1003)
`
`Mozgrin at 407, left col, ¶ 3 (“The action of the magnetic
`field serves only to limit the electron thermal conductivity
`and to provide collisions sufficient for efficient energy
`transfer from electrons to heavy particles.”)
`
`Mozgrin discloses the power supply generates a constant
`power.
`
`See evidence cited in claim 1
`
`‘421 Patent at Fig. 6
`
`‘421 Patent, 15:37-41 (FIG. 6 illustrates graphical
`representations 320, 322, and 324 of the absolute value of
`applied voltage, current, and power, respectively, as a
`function of time for periodic pulses applied to the plasma in
`the sputtering apparatus 200 of FIG. 4”)
`
`‘421 Patent, 15:56-58 (“Between time t1 and time t2, the
`voltage 326, the current 328, and the power 330 remain
`constant…”)
`
`Mozgrin at Figs. 2 and 3
`
`Mozgrin discloses the power supply generates a constant
`voltage.
`
`See evidence cited in claim 1
`
`See evidence cited in claim 10
`
`Mozgrin discloses the amplitude of the voltage pulse is in the
`- 4 -
`
`10. The sputtering source of
`claim 1 wherein the power
`supply generates a constant
`power.
`
`11. The sputtering source of
`claim 1 wherein the power
`supply generates a constant
`voltage.
`
`15. The sputtering source of
`
`
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`‘421 Claims 1, 2, 8, 10, 11, 15,
`16, 34, 38, 39, 43 and 46-48
`
`claim 1 wherein the amplitude
`of the voltage pulse is in the
`range of approximately 1V to
`25kV.
`
`16. The sputtering source of
`claim 1 wherein a pulse width
`of the voltage pulse is in the
`range of approximately 0.1
`μsec to 100 sec.
`
`[34pre]. A method for high
`deposition rate sputtering, the
`method comprising:
`
`[34a] a) generating a voltage
`pulse between the anode and
`the cathode assembly
`comprising a sputtering target,
`the voltage pulse creating a
`weakly-ionized plasma and
`then a strongly-ionized plasma
`from the weakly-ionized
`plasma without an occurrence
`of arcing between the anode
`and the cathode assembly; and
`[34b] b) adjusting an
`amplitude and a rise time of
`the voltage pulse to increase a
`density of ions in the strongly-
`ionized plasma.
`
`38. The method of claim 34
`wherein the amplitude of the
`voltage pulse is in the range of
`
`EXHIBIT C.01
`U.S. Patent No. 7,811,421
`
`Mozgrin
`
`range of approximately 1V to 25kV.
`
`See evidence cited in claim 1
`
`Mozgrin at Fig. 4
`
`Mozgrin discloses a pulse width of the voltage pulse is in the
`range of approximately 0.1 μsec to 100 sec.
`
`See evidence cited in claim 1
`
`Mozgrin at ¶ spanning 403-404 (“The … pulse duration was
`25 ms, and the repetition frequency was 10 Hz….”)
`
`Mozgrin at 401, right col, ¶ 1 (“Thus, the supply unit was
`made providing square voltage and current pulses …
`durations as much as 1.5ms.”)
`
`Mozgrin discloses a method for high deposition rate
`sputtering.
`
`Mozgrin at 403, right col, ¶4 (“Region 2 was characterized
`by intense cathode sputtering….”)
`
`Mozgrin discloses generating a voltage pulse between the
`anode and the cathode assembly comprising a sputtering
`target, the voltage pulse creating a weakly-ionized plasma
`and then a strongly-ionized plasma from the weakly-ionized
`plasma without an occurrence of arcing between the anode
`and the cathode assembly.
`
`See evidence cited in claim [1a]
`
`See evidence cited in claim [1b]
`
`Mozgrin discloses adjusting an amplitude and a rise time of
`the voltage pulse to increase a density of ions in the strongly-
`ionized plasma.
`
`See evidence cited in claim [1b]
`
`Mozgrin discloses the amplitude of the voltage pulse is in the
`range of approximately 1V to 25kV.
`
`
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`

`
`
`‘421 Claims 1, 2, 8, 10, 11, 15,
`16, 34, 38, 39, 43 and 46-48
`
`EXHIBIT C.01
`U.S. Patent No. 7,811,421
`
`Mozgrin
`
`approximately 1V to 25kV.
`
`See evidence cited in claim 34
`
`See evidence cited in claim 15
`
`Mozgrin discloses a pulse width of the voltage pulse is in the
`range of approximately 0.1 μsec to 100 sec.
`
`See evidence cited in claim 34
`
`See evidence cited in claim 16
`
`Mozgrin discloses generating a magnetic field proximate to
`the sputtering target, the magnetic field trapping electrons
`proximate to the sputtering target.
`
`See evidence cited in claim 34
`
`See evidence cited in claim 8
`
`Mozgrin discloses a sputtering source.
`
`See evidence cited in claim 1 preamble
`
`Mozgrin discloses a cathode assembly comprising a
`sputtering target that is positioned adjacent to an anode.
`
`See evidence cited in claim [1a]
`
`Mozgrin discloses a power supply that generates a voltage
`pulse between the anode and the cathode assembly that
`creates a weakly-ionized plasma and then a strongly-ionized
`plasma from the weakly-ionized plasma without an
`occurrence of arcing between the anode and the cathode
`assembly, an amplitude of the voltage pulse being chosen to
`increase a density of ions in the strongly-ionized plasma.
`
`See evidence cited in claim [1b]
`
`39. The method of claim 34
`wherein a pulse width of the
`voltage pulse is in the range of
`approximately 0.1 μsec to 100
`sec.
`
`43. The method of claim 34
`further comprising generating
`a magnetic field proximate to
`the sputtering target, the
`magnetic field trapping
`electrons proximate to the
`sputtering target.
`
`[46pre]. A sputtering source
`comprising:
`
`[46a] a) a cathode assembly
`comprising a sputtering target
`that is positioned adjacent to
`an anode; and
`
`[46b] b) a power supply that
`generates a voltage pulse
`between the anode and the
`cathode assembly that creates a
`weakly-ionized plasma and
`then a strongly-ionized plasma
`from the weakly-ionized
`plasma without an occurrence
`of arcing between the anode
`and the cathode assembly, an
`amplitude of the voltage pulse
`being chosen to increase a
`density of ions in the strongly-
`ionized plasma.
`
`
`ActiveUS 122645741v.1
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`TSMC-1017 / Page 6 of 8
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`

`

`EXHIBIT C.01
`U.S. Patent No. 7,811,421
`
`Mozgrin
`
`Mozgrin discloses a sputtering source.
`
`See evidence cited in claim 1 preamble
`
`Mozgrin discloses a cathode assembly comprising a
`sputtering target that is positioned adjacent to an anode.
`
`See evidence cited in claim [1a]
`
`Mozgrin discloses a power supply that generates a voltage
`pulse between the anode and the cathode assembly that
`creates a weakly-ionized plasma and then a strongly-ionized
`plasma from the weakly-ionized plasma without an
`occurrence of arcing between the anode and the cathode
`assembly, a duration of the voltage pulse being chosen to
`increase a density of ions in the strongly-ionized plasma.
`
`See evidence cited in claim [1b]
`
`Mozgrin discloses a sputtering source.
`
`See evidence cited in claim 1 preamble
`
`Mozgrin discloses a cathode assembly comprising a
`sputtering target that is positioned adjacent to an anode.
`
`See evidence cited in claim [1a]
`
`Mozgrin discloses a power supply that generates a voltage
`pulse between the anode and the cathode assembly that
`creates a weakly-ionized plasma and then a strongly-ionized
`plasma from the weakly-ionized plasma without an
`occurrence of arcing between the anode and the cathode
`assembly, a rise time of the voltage pulse being chosen to
`increase a density of ions in the strongly-ionized plasma.
`
`See evidence cited in claim [1b]
`
`
`
`‘421 Claims 1, 2, 8, 10, 11, 15,
`16, 34, 38, 39, 43 and 46-48
`
`[47pre]. A sputtering source
`comprising:
`
`[47a] a) a cathode assembly
`comprising a sputtering target
`that is positioned adjacent to
`an anode; and
`
`[47b] b) a power supply that
`generates a voltage pulse
`between the anode and the
`cathode assembly that creates a
`weakly-ionized plasma and
`then a strongly-ionized plasma
`from the weakly-ionized
`plasma without an occurrence
`of arcing between the anode
`and the cathode assembly, a
`duration of the voltage pulse
`being chosen to increase a
`density of ions in the strongly-
`ionized plasma.
`
`[48a] 48. A sputtering source
`comprising:
`
`[48a] a) a cathode assembly
`comprising a sputtering target
`that is positioned adjacent to
`an anode; and
`
`[48b] b) a power supply that
`generates a voltage pulse
`between the anode and the
`cathode assembly that creates a
`weakly-ionized plasma and
`then a strongly-ionized plasma
`from the weakly-ionized
`plasma without an occurrence
`of arcing between the anode
`and the cathode assembly, a
`rise time of the voltage pulse
`
`
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`TSMC-1017 / Page 7 of 8
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`

`

`EXHIBIT C.01
`U.S. Patent No. 7,811,421
`
`Mozgrin
`
`
`
`‘421 Claims 1, 2, 8, 10, 11, 15,
`16, 34, 38, 39, 43 and 46-48
`
`being chosen to increase a
`density of ions in the strongly-
`ionized plasma.
`
`
`
`
`ActiveUS 122645741v.1
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`- 8 -
`
`TSMC-1017 / Page 8 of 8
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