`U.S. Patent No. 7,604,716
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`UNITED STATES PATENT AND TRADEMARK OFFICE
`__________________
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`__________________
`
`TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,
`TSMC NORTH AMERICA CORPORATION,
`FUJITSU SEMICONDUCTOR LIMITED,
`FUJITSU SEMICONDUCTOR AMERICA, INC.,
`ADVANCED MICRO DEVICES, INC., RENESAS ELECTRONICS
`CORPORATION, RENESAS ELECTRONICS AMERICA, INC.,
`GLOBAL FOUNDRIES U.S., INC., GLOBALFOUNDRIES DRESDEN
`MODULE ONE LLC & CO. KG, GLOBALFOUNDRIES DRESDEN MODULE
`TWO LLC & CO. KG, TOSHIBA AMERICA ELECTRONIC COMPONENTS,
`INC., TOSHIBA AMERICA INC., TOSHIBA AMERICA INFORMATION
`SYSTEMS, INC., TOSHIBA CORPORATION, and
`THE GILLETTE COMPANY
`
`Petitioners
`
`v.
`
`ZOND, LLC
`Patent Owner
`__________________
`
`Case IPR2014-008081
`Patent 7,604,716 B2
`__________________
`
`PATENT OWNER’S RESPONSE
`35 USC § 316 AND 37 CFR § 42.120
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`
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`1 Cases IPR 2014-00849, IPR 2014-0975, and IPR 2014-01067 have been joined
`with the instant proceeding.
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`IPR2014-00808
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`TABLE OF CONTENTS
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`I. INTRODUCTION ................................................................................................ 1
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`II. TECHNOLOGY BACKGROUND .................................................................... 8
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`A. Plasma Fundamentals. .................................................................................... 9
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`B. Plasma Ignition ............................................................................................. 10
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`C. High-Density Plasmas ................................................................................... 12
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`III. THE ‘716 PATENT ......................................................................................... 13
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`IV. ARGUMENT. ................................................................................................. 16
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`A. Wang. ............................................................................................................ 19
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`B. Kudryavtsev. ................................................................................................. 24
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`C. Mozgrin. ........................................................................................................ 29
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`D. Lantsman. ...................................................................................................... 29
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`E. Wang and Kudryavtsev Do Not Suggest Generating a Strongly-Ionized
`Plasma Without Developing an Electrical Breakdown Condition as Required
`by the Challenged Claims of the ’716 Patent. ..................................................... 31
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`F. The Combination of Wang and Kudryavtsev Does Not Suggest Supplying
`the Electric Pulse Comprises “ applying a quasi-static electric field,” as Recited
`in Dependent Claim 21. ....................................................................................... 35
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`G. It Would Not Have Been Obvious To Combine the Teachings of Wang
`and Kudryavtsev To Achieve the Invention Claimed in the ’716 Patent. ........... 37
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`H. It Would Not Have Been Obvious To Combine the Teachings of Wang,
`Kudryavtsev, and Mozgrin To Achieve the Invention Claimed in the ’716
`Patent. .................................................................................................................. 40
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`I. It Would Not Have Been Obvious To Combine the Teachings of Wang,
`Kudryavtsev, and Lantsman To Achieve the Invention Claimed in the ’716
`Patent. .................................................................................................................. 45
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`V. CONCLUSION ................................................................................................. 48
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`TABLE OF AUTHORITIES
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`CASES
`Alza Corp. v. Mylan Labs., Inc.,
`464 F.3d 1286 (Fed. Cir. 2006) ........................................................................... 19
`
`
`Cross Med. Prods., Inc. v. Medtronic Sofamor Danek, Inc.,
`424 F.3d 1293 (Fed. Cir. 2005) ........................................................................... 19
`
`
`Heart Failure Technologies, LLC v. Cardiokinetix, Inc.,
`IPR2013-00183 (P.T.A.B. July 31, 2013) ........................................................... 18
`
`
`KSR Int’l Co. v. Teleflex Inc.,
`550 U.S. 398 (2007) ............................................................................................ 18
`
`
`Mintz v. Dietz & Watson, Inc.,
`679 F.3d 1372 (Fed. Cir. 2012) ........................................................................... 18
`
`
`Proctor & Gamble Co. v. Teva Pharm. USA, Inc.,
`566 F.3d 989 (Fed. Cir. 2009) ............................................................................. 17
`
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`IPR2014-00808
`U.S. Patent No. 7,604,716
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`EXHIBIT LIST
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`Exhibit
`No.
`Ex. 2001 Affidavit of Etai Lahav in Support of Patent Owner’s Motion for Pro
`Hac Vice Admission
`
`Description
`
`Ex. 2002 Affidavit of Maria Granovsky in Support of Patent Owner’s Motion
`for Pro Hac Vice Admission
`
`Ex. 2003 Affidavit of Tigran Vardanian in Support of Patent Owner’s Motion
`for Pro Hac Vice Admission
`
`Ex. 2004 Declaration of Larry D. Hartsough, Ph.D.
`
`Ex. 2005 Transcript of Deposition of Dr. Uwe Kortshagen, IPR2014-00807,
`-00808, -01099 & -01100, Dec. 22, 2014.
`
`Ex. 2006 Eronini Umez-Eronini, SYSTEM DYNAMICS AND CONTROL,
`Brooks/Cole Publishing Co. (1999), pp. 10-13.
`
`Ex. 2007 Robert C. Weyrick, FUNDAMENTALS OF AUTOMATIC CONTROL,
`McGraw-Hill Book Company (1975), pp. 10-13.
`
`Ex. 2008 Chiang et al., U.S. Patent 6,398,929.
`
` v
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`I. INTRODUCTION
`All of the challenged claims (19-24) are patentable over Wang and
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`U.S. Patent No. 7,604,716
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`Kudryavtsev. The ‘716 patent requires generating a strongly-ionized plasma
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`without developing an electrical breakdown condition in a chamber.1 Wang,
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`however, merely describes techniques for reducing, but not eliminating, electrical
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`breakdown conditions such as arcing. The two are not the same. Kudryavtsev
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`reports on “ionization relaxation” in a plasma when an external electric field is
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`suddenly increased,2 but describes experiments with an apparatus that does not
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`include a magnetic field3 and, that are consistent with a flash caused by electrical
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`breakdown, and very likely, arcing.4 Thus, the combination of Wang and
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`Kudryavtsev would not suggest supplying an electrical pulse across a weakly-
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`ionized plasma that excites atoms in the weakly-ionized plasma, thereby generating
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`a strongly-ionized plasma without developing an electrical breakdown condition in
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`the chamber,” as required by all of the challenged claims.5
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`1 Ex. 1301 at 21:9-11 (claim 14) (emphasis added).
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`2 Ex. 1305 at p. 30, left col, ¶ 1.
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`3 Ex. 2004 at ¶ 73.
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`4 Id. at ¶ 75.
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`5 Id. at ¶ 105.
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`1
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`Wang describes applying DC power pulses to a plasma when sputtering
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`material from a target, but fails to teach or suggest controlling voltage during such
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`activities or when generating a high-density plasma. In fact, Wang does not explain
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`any electrodynamics of high-density plasmas.6 Control of power (as in Wang) is
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`very different from controlling voltage,7 and even Wang acknowledges this
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`distinction.8 Thus, unlike the ‘716 patent, in which the rise time of the electric field
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`is chosen to increase an ionization rate of excited atoms in a weakly-ionized
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`plasma to generate a strongly-ionized plasma,9 Wang discloses a very different
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`approach to achieving a high density plasma.10
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`
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`“Wang’s elections in this regard have consequences.”11 The power pulses
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`will tend to produce an arc during the ignition of the plasma, as observed by Wang:
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`6 Id. at ¶¶ 12, 71.
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`7 Id. at ¶¶ 58-62.
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`8 Ex. 1304 at 5:52-54 (“Where chamber impedance is changing, the power pulse
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`width is preferably specified rather than the current or voltage pulse widths.”).
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`9 See, e.g., Ex. 1301 at 8:40-47; 22:29-32.
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`10 Ex. 2004 at ¶ 60.
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`11 Id. at ¶ 61.
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`2
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`Plasma ignition, particularly in plasma sputter reactors, has a
`tendency to generate particles during the initial arcing, which
`may dislodge large particles from the target or chamber.12
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`This arcing is very problematic inasmuch as it leads to particle generation and can
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`damage the chamber and power equipment.13 Because Wang expects arcing when
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`his power pulses are used to ignite a plasma, the reference proposes only igniting
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`the plasma once and applying a fixed background power so that the plasma is
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`maintained in between power pulses.14
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`
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`Wang, however, does not solve the problem of arcing during plasma
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`initiation.15 Instead, Wang merely proposes reducing the amount of arcing by
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`keeping the plasma maintained so as not to require re-ignition with each pulse.16
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`Arcing is still possible when a pulse is applied across a pre-existing plasma,
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`particularly when there is a large, abrupt increase in the electric field as would
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`occur upon the sudden application of a power pulse, such as in the transition from
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`12 Ex. 1304 at 7:3-6.
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`13 Id. at 7:1-12.
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`14 Id. at 7:13-31.
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`15 Ex. 2004 at ¶ 64.
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`16 Id.
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`3
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`PB to PP shown in Wang’s Fig. 6.17 Wang does not discuss the risk of arcing in
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`connection with the application of power pulses, PP, or how to avoid it. Thus,
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`Wang does not teach or suggest that arcing could be avoided.18
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`The teachings of Kudryavtsev do not suggest any different result. As
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`discussed by Dr. Hartsough, a qualitative analysis reveals that Kudryavtsev’s flash
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`tube experiments had results consistent with arcing.19 Consequently, any
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`combination of Wang and Kudryavtsev would, at best, suggest techniques to
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`reduce, but not eliminate, arcing. It is also worth noting that Petitioners’ expert, Dr.
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`Kortshagen, testified that he understands the Board’s construction of the terms
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`“strongly ionized plasma” and “weakly ionized plasma” to require a range of
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`absolute magnitudes in peak density of ions, (namely, equal to or greater than 1012
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`and equal to or less than 109, respectively).20 Interestingly, this opinion conflicts
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`with that of Mr. Devito—Petitioner’s other expert—who requires that a strongly-
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`17 Id. at ¶ 65.
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`18 Id.
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`19 Id. at ¶ 107 (discussing the rapid drop in voltage reported by Kudryavtsev—
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`characteristic of arcing).
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`20 IPR2014-00818 Ex. 2010 at 44:13 – 58:12.
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`ionized plasma have a peak density of ions that is 3-4 orders of magnitude greater
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`than a weakly ionized plasma.21 But Dr. Kortshagen acknowledges that neither
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`Wang nor Kudryavtsev disclose a magnitude for the peak density of ions.22 Thus,
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`according to Dr. Kortshagen’s interpretation, it is impossible to conclude that
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`either Wang or Kudryavtsev teach a strongly ionized plasma at all.
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`In contrast, the ‘716 patent demonstrates that arcing can be avoided, even on
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`plasma ignition, with proper control of electric field amplitude and rise time. This
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`is recited in the claims of the ‘716 patent, which require generating the strongly
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`ionized plasma without developing an electrical breakdown condition in the
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`chamber.23 Inasmuch as the combination of Wang and Kudryavtsev fails to suggest
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`such features, the patentability of the challenged claims should be confirmed over
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`these references.
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`The situation does not change if one considers the additional teachings of
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`Mozgrin or Lantsman. Mozgrin relates to “high-power quasi-stationary low-
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`21 IPR2014-00799, Ex. 2014 at 169:10 – 170:25; 225:23 – 226:3.
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`22 IPR2014-00818 Ex. 2010 at 212:20-22; 216:2 – 217:21; 154:23 – 155:15.
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`23 Ex. 1301 at 21:9-11 (emphasis added); 22:13-15.
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`5
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`pressure discharge in a magnetic field.”24 While it is true that Mozgrin took into
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`account certain dependencies reported by Kudryavtsev in designing a pulsed power
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`supply unit,25 this does not imply that one or ordinary skill in the art would have
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`combined the teachings of Wang and Kudryavtsev. Mozgrin determined that for
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`systems employing a magnetic field, a supply unit “providing square voltage and
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`current pulses with rise times (leading edge) of 5 – 60 µs and durations as much as
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`1.5 ms” was needed.26 Wang, on the other hand was concerned with regimes in
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`which pulses had “significant” rise times and pulse widths were preferably kept to
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`less than 200 µs and no more than 1 ms.27 Given these important distinctions in the
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`nature of the supply unit, the teachings of Mozgrin would be of little value to a
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`person of ordinary skill in the art when considering the system of Wang.28
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`Significant experimentation would still be required in order to adapt any teachings
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`of Mozgrin to the regime of Wang.
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`24 Ex. 1303 at p. 400, Abstract.
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`25 Id. at p. 401, rt. col.
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`26 Id.
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`27 Ex. 1304 at 5: 26-27, 43-48; 8:41-42.
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`28 Ex. 2004 at ¶ 126.
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`Lantsman describes a circuit with two power supplies: “[a] secondary power
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`supply pre-ignites the plasma by driving the cathode to a process initiation voltage.
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`Thereafter, a primary power supply electrically drives the cathode to generate
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`plasma current and deposition on a wafer.”29 Immediately then, and irrespective of
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`any teachings Lantsman may or may not provide concerning the provision of a
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`feed gas, one can discern a significant difference between Wang and Lantsman.30
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`Indeed, Lantsman fails to discuss any pulsed power supply, electrical pulse, or
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`strongly-ionized plasma and thus differs substantially from Wang in important
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`regards.31 Systems that use a pulsed discharge supply unit, like those of Wang,
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`would operate very differently if modified to use two DC power supplies, one of
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`which supplies power for an entire deposition period, as taught by Lantsman.32
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`Such modifications would be significant changes to semiconductor processing
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`methods employing such apparatus and a person of ordinary skill in the art would
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`need to undertake significant experimentation with such equipment to understand
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`29 Ex. 1306 at 4:11 and 4:19 (describing two DC power supplies).
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`30 Ex. 2004 at ¶ 87.
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`31 Id. at ¶ 100.
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`32 Id.
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`7
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`how the plasma was affected. In short, there would be no motivation for a person
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`of ordinary skill in the art to adopt such changes.33 Indeed, inasmuch as Lantsman
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`fails to even mention strongly-ionized plasma, there appears to be little, if any,
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`reason for a person of ordinary skill in the art to have consulted Lantsman for any
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`relevant teachings concerning systems in which an electrical pulse is applied across
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`a weakly-ionized plasma to generate a strongly-ionized plasma.34
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`Thus, the challenged claims are patentable over the combinations of
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`references cited by Petitioners and all of the proposed rejections should be denied.
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`II. TECHNOLOGY BACKGROUND
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`The ‘716 patent relates to “[m]ethods and apparatus for generating a
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`strongly-ionized plasma.”35 Accordingly, we first review some fundamentals
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`concerning plasmas, and strongly-ionized (or high-density) plasmas in particular,
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`and then address Dr. Chistyakov’s particular solution for generating such a plasma.
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`33 Id.
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`34 Id.
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`35 Ex. 1301 at Abstract.
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`8
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`A.
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`Plasma Fundamentals.
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`Plasma is a distinct state of matter characterized by a significant number of
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`electrically charged particles.36 In an ordinary gas, each atom or molecule contains
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`an equal number of positive and negative charges, so that each is electrically
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`“neutral.” When the atoms or molecules of the gas are subjected to heat or other
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`energy, they begin to lose electrons and are left with a positive charge. This
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`process is called ionization. When enough gas atoms or molecules have been
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`ionized such that the ions, together with the free electrons, significantly affect the
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`electrical characteristics of the substance it is said to be plasma. Although made up
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`of charged particles the plasma remains electrically neutral overall.37
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`Plasmas are used in a number of commercial and industrial applications,
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`including the manufacture of semiconductor devices. To that end, if a target (or an
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`object in its vicinity) is made electrically negative compared to the plasma,
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`positively charged ions in the plasma will be accelerated towards the target and a
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`number of different interactions may occur (see Figure 1, below).38
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`36 Id. at 1:6-8.
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`37 Ex. 2004 at ¶ 46.
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`38 Id. at ¶ 47.
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`9
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`(A)
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`(B)
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`(C)
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`(D)
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`Plasma
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`Surface
`of
`Target
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`FIG. 1
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`
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`Figure 1: Interactions at a target’s surface
`In Figure 1, an arriving ion is adsorbed onto the surface of the target at (A).
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`At (B), the incoming ion transfers some of its momentum to one of the target’s
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`surface atoms and causes it to be displaced. If the energy of the incoming ion is
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`sufficiently high, surface atoms of the target may be removed in a process referred
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`to as sputtering (shown in (C)). If the ion energy is even greater, then it may be
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`implanted into the target (at (D)).39 Sputtering is often used to deposit layers of
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`material on a semiconductor substrate as part of an integrated circuit fabrication
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`process.40
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`B.
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`Plasma Ignition
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`To ignite a plasma, a gas is introduced in a space between two electrodes,
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`39 Id. at ¶ 48.
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`40 Ex. 1304 at 1:10-15.
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`10
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`for example in a tube or other container, and an electric field is applied between
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`the electrodes. An example of such an arrangement is shown in Figure 2.41
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`Cathode
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`Anode
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`Tube
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`Gas
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`Electric Field
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`+
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`_
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`Voltage
`Source
`Figure 2: Simplified plasma system
`Ions and electrons in the gas are accelerated towards the electrically negative
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`
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`electrode (the “cathode”) and the electrically positive electrode (the “anode”),
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`respectively. As electrons collide with gas atoms, they produce new ions.42
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`When the ions are in close proximity to the cathode (e.g., on the order of a
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`few Angstroms), electrons can tunnel from the cathode, neutralizing the ions and
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`releasing energy. If sufficient energy is transferred to a surface electron at the
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`cathode, “secondary electrons” are emitted into the gas. The secondary electrons
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`are accelerated towards the anode, and when they collide with gas atoms they
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`41 Ex. 2004 at ¶ 49.
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`42 Id.
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`11
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`generate new ions and free electrons. The process of ionization proceeds in this
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`fashion; and, if the applied power is sufficiently high, a plasma is created.43
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`C. High-Density Plasmas
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`The ‘716 patent is particularly concerned with high-density plasmas, for
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`example, plasmas having a density greater than 1012 cm-3.44 Magnetron reactors
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`develop high-density plasmas using a magnetic field configured parallel to a target
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`surface to constrain the secondary electrons. The ions also concentrate in the same
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`region, maintaining the quasi-electrical neutrality of the plasma.45 This trapping of
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`electrons and ions creates a dense plasma.46
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`Conventional magnetron systems suffer from undesirable, non-uniform
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`erosion or wear of the target that results in poor target utilization.47 To address
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`such problems, researchers tried increasing the applied power and later pulsing the
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`applied power. However, increasing the applied power increased “the probability
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`43 Id. at ¶ 50.
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`44 See, e.g., Ex. 1301 at 21:45-7.
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`45 Id. at 3:13-28.
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`46 Ex. 2004 at ¶ 51.
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`47 Ex. 1301 at 3:29-31.
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`12
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`of generating an electrical breakdown condition leading to an undesirable electrical
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`discharge (an electrical arc) in the chamber . . . .”48 Even with the pulsed approach,
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`“very large power pulses can still result in undesirable electrical discharges
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`regardless of their duration.”49
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`III. THE ‘716 PATENT
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`To overcome some of the deficiencies of the prior art, Dr. Chistyakov
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`invented a plasma processing apparatus and corresponding method in which:
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`An ionization source generates a weakly-ionized plasma
`proximate to the cathode. A power supply produces an electric
`field in the gap between the anode and the cathode. The electric
`field generates excited atoms in the weakly-ionized plasma and
`generates secondary electrons from the cathode. The secondary
`electrons ionize the excited atoms, thereby creating a strongly-
`ionized plasma.50
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`***
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`48 Id. at 3:38-41.
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`49 Id. at 3:50-52; and see Ex. 2004 at ¶¶ 52-54.
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`50 Ex. 1301 at Abstract.
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`13
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`Forming the weakly-ionized or pre-ionized plasma [ ]
`substantially eliminates the probability of establishing a
`breakdown condition in the chamber when high-power pulses
`are applied between the cathode [ ] and the anode [ ]. The
`probability of establishing a breakdown condition is
`substantially eliminated because the weakly-ionized plasma [ ]
`has a low-level of ionization that provides electrical
`conductivity through the plasma. This conductivity
`substantially prevents the setup of a breakdown condition,
`even when high power is applied to the plasma.51
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`As illustrated in Fig. 2A of the ‘716 patent, Dr. Chistyakov’s plasma
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`processing apparatus includes a cathode 204.52 An anode 216 is positioned “so as
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`to form a gap 220 between the anode 216 and the cathode 204 that is sufficient to
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`allow current to flow through a region 222 between the anode 216 and the cathode
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`204. . . . The gap 220 and the total volume of the region 222 are parameters in the
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`ionization process . . . .”53
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`51 Id. at 4:16-25 (emphasis added).
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`52 Id. at 3:63-64.
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`53 Id. at 4:30-39.
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`“[O]nce the weakly-ionized plasma 232 is formed, the pulsed power supply 202
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`generates high-power pulses between the cathode 204 and the anode 216 (FIG.
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`2C).”54
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`54 Id. at 6:51-53.
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`15
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`“The high-power pulses generate a strong electric field 236 between the cathode
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`204 and the anode 216. . . . [and] generate a highly-ionized or a strongly-ionized
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`plasma 238 from the weakly-ionized plasma 232 . . . .”55 The strongly-ionized
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`plasma is also referred to as a high-density plasma.56
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`The challenged claims are all directed to generating a strongly-ionized
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`plasma using the multi-stage ionization described above. In particular, the claims
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`require generating a strongly-ionized plasma without developing an electrical
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`breakdown condition in a chamber.57
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`IV. ARGUMENT.
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`In this proceeding, claim 21 is alleged to be unpatentable under 35 U.S.C. §
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`103 as obvious in view of the combination of Wang and Kudryavtsev. Claims 19
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`and 20 are alleged to be obvious in view of Wang, Kudryavtsev, and Lantsman.
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`Claims 22-24 are alleged to be obvious in view of Wang, Kudryavtsev, and
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`Mozgrin. However, Petitioners cannot prevail on any proposed grounds of
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`rejection because none of the proposed combinations of references teach or suggest
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`55 Id. at 7:3-18.
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`56 Id. at 7:18-19.
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`57 Id. at 21:9-11 (emphasis added).
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`16
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`generating a strongly-ionized plasma without developing an electrical breakdown
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`IPR2014-00808
`U.S. Patent No. 7,604,716
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`condition in a chamber as required by the challenged claims.58 Accordingly, the
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`patentability of the challenged claims should be confirmed.
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`A party seeking to invalidate a patent claim as obvious must demonstrate
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`that a “skilled artisan would have been motivated to combine the teachings of the
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`prior art references to achieve the claimed invention, and that the skilled artisan
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`would have had a reasonable expectation of success in doing so.”59 This
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`determination is one that must be made at the time the invention was made.60 This
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`58 All of the challenged claims depend from claim 14, which requires generating a
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`strongly-ionized plasma without developing an electrical breakdown condition in
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`a chamber. Id. (emphasis added).
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`59 See Proctor & Gamble Co. v. Teva Pharm. USA, Inc., 566 F.3d 989, 995 (Fed.
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`Cir. 2009) (“To decide whether risedronate was obvious in light of the prior art, a
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`court must determine whether, at the time of invention, a person having ordinary
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`skill in the art would have had ‘reason to attempt to make the composition’ known
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`as risedronate and ‘a reasonable expectation of success in doing so.’”) (emphasis
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`added).
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`60 Id.
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`17
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`temporal requirement prevents the “forbidden use of hindsight.”61 Furthermore,
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`rejections for obviousness cannot be sustained by mere conclusory statements.62
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`“Petitioner[s] must show some reason why a person of ordinary skill in the art
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`would have thought to combine particular available elements of knowledge, as
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`evidenced by the prior art, to reach the claimed invention.”63 Inventions are often
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`deemed nonobvious (and thus patentable) even when all of the claim elements are
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`individually found in the prior art because an “invention may be a combination of
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`61 See Mintz v. Dietz & Watson, Inc., 679 F.3d 1372, 1379 (Fed. Cir. 2012)
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`(“Indeed, where the invention is less technologically complex, the need for
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`Graham findings can be important to ward against falling into the forbidden use of
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`hindsight.”).
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`62 KSR Int’l Co. v. Teleflex Inc., 550 U.S. 398, 418 (2007) (“[R]ejections on
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`obviousness grounds cannot be sustained by mere conclusory statements; instead,
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`there must be some articulated reasoning with some rational underpinning to
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`support the legal conclusion of obviousness”).
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`63 Heart Failure Technologies, LLC v. Cardiokinetix, Inc., IPR2013-00183, Paper
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`12 at p. 9 (P.T.A.B. July 31, 2013) (citing KSR, 550 U.S. at 418) (emphasis in
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`original).
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`18
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`old elements.”64 The motivation to combine inquiry focuses heavily on “scope and
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`content of the prior art” and the “level of ordinary skill in the pertinent art” aspects
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`of the Graham factors.65 Accordingly, we begin with a discussion of the references
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`at issue in this proceeding.
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`A. Wang.
`Wang discusses “[a] pulsed magnetron sputter reactor [with] a high plasma
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`density.”66 In this reactor, “narrow pulses of negative DC power” are used to
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`sputter material from a target.67 In one example, Wang indicates that the pulses are
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`applied to both ignite the plasma and maintain it,68 while in another example Wang
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`64 Cross Med. Prods., Inc. v. Medtronic Sofamor Danek, Inc., 424 F.3d 1293, 1321
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`(Fed. Cir. 2005).
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`65 Alza Corp. v. Mylan Labs., Inc., 464 F.3d 1286, 1290 (Fed. Cir. 2006) (“We
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`further explained that the ‘motivation to combine’ requirement ‘[e]ntails
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`consideration of both the ‘scope and content of the prior art’ and ‘level of ordinary
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`skill in the pertinent art’ aspects of the Graham test.’”).
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`66 Ex. 1304 at 3:16-22.
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`67 Id. at 4:33-34.
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`68 Id. at 5:29-30.
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`19
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`describes maintaining the plasma using a background power level with the pulses
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`applying a much greater peak power to increase the density of the plasma.69 In both
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`examples it is the power applied to a cathode target that is driven to a prescribed
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`level, not voltage.70
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`“This is not merely a difference in semantics.”71 Wang acknowledges there
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`is a substantive difference between controlling power and controlling voltage, and
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`chooses to control power parameters rather than those of current or voltage:
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`Where chamber impedance is changing, the power pulse width
`is preferably specified rather than the current or voltage pulse
`widths.72
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`Thus, unlike the ‘716 patent, in which the rise time of the electric field is chosen to
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`increase an ionization rate of excited atoms in a weakly-ionized plasma to generate
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`69 Id. at 7:13-30.
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`70 Id. at 5:18-20; 7:13-30; and see 5:52-54 (“Where chamber impedance is
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`changing, the power pulse width is preferably specified rather than the current or
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`voltage pulse widths.”); and see Ex. 2004 at ¶ 58.
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`71 Ex. 2004 at ¶ 60.
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`72 Ex. 1304 at 5:52-54.
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`20
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`a strongly-ionized plasma,73 Wang discloses a very different approach to achieving
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`a high density plasma.74
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`“[W]hen it comes to manipulating plasma density, configuring a power
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`supply to generate electrode power pulses can yield substantially different results
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`than configuring a power supply to generate voltage pulses with amplitude and rise
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`times.”75 Power pulses are the product of voltage and current. Therefore, to
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`maintain a constant power in the presence of a varying impedance (as in the case of
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`a weakly ionized plasma being transformed to a strongly ionized plasma), voltage
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`and current can vary significantly.76 A power supply will drive the voltage
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`extremely high when the current is near zero (e.g., before plasma ignition or when
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`the plasma density is low),77 producing an arc:
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`