UNITED STATES PATENT AND TRADEMARK OFFICE
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`_____________________
`
`FUJITSU SEMICONDUCTOR LIMITED, FUJITSU SEMICONDUCTOR AMERICA, INC., ADVANCED MICRO
`DEVICES, INC., RENESAS ELECTRONICS CORPORATION, RENESAS ELECTRONICS AMERICA, INC., GLOBAL
`FOUNDRIES U.S., INC., GLOBALFOUNDRIES DRESDEN MODULE ONE LLC & CO. KG, GLOBALFOUNDRIES
`DRESDEN MODULE TWO LLC & CO. KG, TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC., TOSHIBA
`AMERICA INC., TOSHIBA AMERICA INFORMATION SYSTEMS, INC., TOSHIBA CORPORATION, and THE
`GILLETTE COMPANY,
`
`Petitioners
`v.
` ZOND, LLC
`Patent Owner
`
`U.S. Patent No. 7,811,421
` _____________________
`
`Cases IPR2014-00800; IPR2014-00802; IPR2014-00805
`
`
`
`Patent Owner’s Demonstrative Exhibits
`
`
`
`
` 1
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`_____________________
`
`FUJITSU SEMICONDUCTOR LIMITED, FUJITSU SEMICONDUCTOR AMERICA, INC., ADVANCED MICRO
`DEVICES, INC., RENESAS ELECTRONICS CORPORATION, RENESAS ELECTRONICS AMERICA, INC., GLOBAL
`FOUNDRIES U.S., INC., GLOBALFOUNDRIES DRESDEN MODULE ONE LLC & CO. KG, GLOBALFOUNDRIES
`DRESDEN MODULE TWO LLC & CO. KG, TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC., TOSHIBA
`AMERICA INC., TOSHIBA AMERICA INFORMATION SYSTEMS, INC., TOSHIBA CORPORATION, and THE
`GILLETTE COMPANY,
`
`Petitioners
`v.
` ZOND, LLC
`Patent Owner
`
`U.S. Patent No. 7,811,421
` _____________________
`
`Cases IPR2014-00800; IPR2014-00802; IPR2014-00805
`
`
`
`Patent Owner’s Demonstrative Exhibits
`
`
`
`
` 1
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`‘421 Patent
`Low Power Pulse to Create A Weakly Ionized Plasma
`
`“The characteris?cs of the voltage pulse are chosen
`such that an electric field 260 develops between the
`cathode assembly 216 and the anode 238 that creates a
`weakly-‐ionized plasma 262 in the region 245 between
`the anode 238 and the cathode assembly 216.” Ex. 1001,
`‘421 patent, col. 11, lines 9 -‐ 25.
`
`“In one embodiment, the pulsed power supply 234
`generates the weakly-‐ionized plasma 262 by generaIng
`a low power pulse having an iniIal voltage that is in the
`range of 100V to 5 kV with a discharge current that is in
`the range of 0.1 A to 100 A.” Ex. 1001, ‘421 patent, col. 11,
`lines 9 – 25.
`
`
`“In operaIon, the pulsed power supply 102 applies a
`voltage pulse between the cathode assembly 114 and
`the anode 130 that has a sufficient amplitude to ionize
`the argon feed gas in the vacuum chamber 104.” Ex. 1001,
`‘421 patent, col. 4, lines 13 -‐ 16.
`
`“In one embodiment, the pulsed power supply generates
`a low power pulse … in order to generate the weakly
`ionized plasma.” Ex. 1001, ‘421 patent, col. 8, lines 29 – 34; see
`also col. 11, lines 21 – 22.
`
`
`
`
`
` 2
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`‘421 Patent
`
` Weakly Plasma’s Density Has Sufficient Conduc?vity to
`Suppress Arc When High Power Applied
`
`
`“Forming a weakly-‐ionized or pre-‐ionized plasma
`substan?ally eliminates the probability of establishing
`a breakdown condi?on in the chamber 202 when high-‐
`power pulses are applied between the cathode
`assembly 216 and the anode 238. …
`
`The probability of establishing a breakdown condiIon is
`substanIally eliminated because the weakly-‐ionized
`plasma has a low-‐level of ionizaIon that provides
`electrical conduc?vity through the plasma. This
`conduc?vity greatly reduces or prevents the possibility
`of a breakdown condi?on when high power is applied
`to the plasma.” Ex. 1001, ‘421 patent, Col. 9, lines 16 – 28; see
`also, col. 15, lines 67 – col. 16, line 3.
`
`
`
`
`
` 3
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`‘421 Patent
`
`High Pulse Power For Transi?on
`to Strongly-‐Ionized Plasma
`
`
`“Once the weakly-‐ionized plasma is formed, high-‐
`power pulses are then generated between the cathode
`assembly 216 and the anode 238. In one embodiment,
`the pulsed power supply 234 generates the high-‐power
`pulses. The desired power level of the high-‐power pulse
`depends on several factors including the desired
`deposiIon rate, the density of the pre-‐ionized plasma,
`and the volume of the plasma, for example.
`Ex. 1001, ‘421 patent, col. 9, lines 29 – 36.
`
`“In one embodiment, the pulsed power supply 234
`generates the weakly-‐ionized plasma 262 by genera?ng
`a low power pulse …. The pulsed power supply 234
`generates high-‐power pulses between the cathode
`assembly 216 and the anode 238 (FIG. 5C) aKer the
`weakly-‐ionized plasma 262 is formed.” Ex. 1001, ‘421
`patent, col. 11, lines 21 – 62.
`
`
`
` 4
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`‘421 Patent
`
`Choose Voltage Amplitude, Rise Time and Dura?on
`
`
`“The parIcular size, shape, width, and frequency of the high-‐power pulses depend on various
`factors … . The shape and dura?on of the leading edge 356 and the trailing edge 358 of the high-‐
`power pulse 354 is chosen so as to sustain the weakly-‐ionized plasma 262 while controlling the rate
`of ionizaIon of the strongly-‐ionized plasma 268.” Ex. 1001, ‘421 patent, col. 16, lines 61 -‐ 64.
`
`
`
`“The amplitude and shape of the voltage pulse are such that a weakly-‐ionized plasma is generated
`in the region 246 between the anode 238 and the cathode assembly 216. ” Ex. 1001, ‘421 patent, col. 8,
`lines 19 -‐ 22.
`
`“Each of the high-‐power pulses are maintained for a predetermined ?me ..” Ex. 1001, ‘421 patent,
`col. 9, lines 45 – 46.
`
`
`
`
`
`“The level and dura?on of the high power electrical pulse is limited by the level and duraIon of the
`power that the strongly-‐ionized plasma 268 can absorb before the high power discharge contracts
`and terminates.” Ex. 1001, ‘421 patent, col. 14, lines 26 -‐ 29.
`
`
`
`
` 5
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`‘421 Patent: Claim 1
`A spuhering source comprising:
`
`a) a cathode assembly comprising a spuhering target that is posiIoned adjacent to an
`
`b) a power supply that generates a voltage pulse between the anode and the cathode
`
`anode; and
`assembly that
`assembly,
`a density of ions in the strongly-‐ionized plasma.
`
`
`creates a weakly-‐ionized plasma and then a strongly-‐ionized plasma from the weakly-‐
`ionized plasma without an occurrence of arcing between the anode and the cathode
`
`an amplitude, a dura?on and a rise ?me of the voltage pulse being chosen to increase
`
`
`
` 6
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`’421 Patent: Claim InterpretaIon
`
`Claim 1
`
`Proposed Construction
`
`a voltage pulse …
`that creates a weakly-‐ionized
`plasma
`and then a strongly-‐ionized plasma
`from the weakly-‐ionized plasma
`without an occurrence of arcing
`
`A voltage pulse that ignites a gas from a state
`in which there is no plasma to a state in which
`a plasma exists, wherein the plasma is iniIally
`a weakly-‐ionized plasma and then a strongly-‐
`ionized plasma that is formed from the
`weakly-‐ionized plasma without an occurrence
`
`of arcing
`
`
`
` 7
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`’421 Patent: Claim InterpretaIon
`
`Claim 1
`
`a voltage pulse …
`that creates a weakly-‐ionized
`plasma
`and then a strongly-‐ionized plasma
`from the weakly-‐ionized plasma
`without an occurrence of arcing
`
`Speci4ication Uses the Phrase “Creates a Weakly
`Ionized Plasma” When Referring to Plasma Ignition
`“The characterisIcs of the voltage pulse are chosen such
`that an electric field 260 develops between the cathode
`assembly 216 and the anode 238 that creates a weakly-‐
`ionized plasma 262 in the region 245 between the anode
`238 and the cathode assembly 216.” Ex. 1001, ‘421 patent,
`col. 11, lines 14 – 18; see Dr. Overzet tesEmony, Zond Ex. 2018,
`
`Page 102, line 6 -‐ page 104, line 5.
`
`
`
` 8
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`’421 Patent: Claim InterpretaIon
`
`Claim 1
`
`Dr. Kortshagen
`
`a voltage pulse …
`that creates a weakly-‐ionized
`plasma
`and then a strongly-‐ionized plasma
`from the weakly-‐ionized plasma
`without an occurrence of arcing
`
`Q. What is your interpretaIon of creaIng a weakly ionized
`plasma?
`THE WITNESS: CreaIng a weakly ionized plasma? So if we
`talk about the creaIon of a plasma, I would assume that
`we talk about the mechanism, which is typically referred
`to as igni?on of the plasma where you go from a state
`where you do not have a plasma present to a state
`where you now have a plasma present.
`Ex. 2017, Kortshagen DeposiEon, page 12, lines 13 -‐ 24.
`
`
`
`
`
` 9
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`’421 Patent: Claim InterpretaIon:
`
`SpecificaIon DisInguishes “Pulsed” From “DC”
`
`Pulsed Approach
`
`DC Approach
`
`“In one embodiment, the pulsed power
`supply generates a low power pulse …
`in order to generate the weakly ionized
`plasma.” Ex. 1001, ‘421 patent, col. 8,
`lines 29 – 34; see also col. 11, lines 21 –
`22.”
`
`In one embodiment, a direct current (DC)
`power supply (not shown) is used to
`generate and maintain the weakly-‐ionized
`or pre-‐ionized plasma.” Ex. 1001, ‘421
`
`patent, col. 8, lines 45 – 48
`
`
`
`10
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`Legal Standard For AnIcipaIon
`
`“A single prior art reference anIcipates a patent claim if it expressly or
`inherently describes each and every limita?on set forth in the patent claim.
`Inherent anIcipaIon requires that the missing descripIve material is
`“necessarily present,” not merely probably or possibly present, in the prior
`art.” Trintec Industries, Inc. v. TOP-‐USA Corp., 295 F.3d 1292, 1294 (Fed. Cir. 2002).
`
`
`
`
`
`11
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`Legal Standard For AnIcipaIon
`
`
`
`“The difference between a printer and a photocopier may be minimal and
`obvious to those of skill in this art. Nevertheless obviousness is not inherent
`an?cipa?on. Given the strict iden?ty required of the test for novelty, on
`this record no reasonable jury could conclude that the Sweda catalog
`discloses either expressly o inherently a color photocopier.” Trintec Industries,
`Inc. v. TOP-‐USA Corp., 295 F.3d 1292, 1295 (Fed Cir. 2002).
`
`“Cases involving novelty, with its strict iden?fy requirement are quite rare.”
`Trintec. v. TOP, 295 F.3d 1292, 1296 (Fed. Cir. 2002).
`
`
`
`
`
`12
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`Wang’s Pulses
`
`
`
`13
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`Wang’s Fig. 4
`
`“The on-‐and-‐off pulsing represented in the
`waveforms of FIG. 4 can be further
`improved to benefit semiconductor
`processing. Plasma igniIon, parIcularly in
`plasma spuher reactors, has a tendency to
`generate parIcles during the ini?al
`arcing.” Wang, col. 7, lines 1 – 5.
`
`
`
`
`
`14
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`Wang’s Fig. 6
`
`“The iniIal plasma igniIon needs
`be performed only once and at
`much lower power levels so that
`parIculates produced by arcing
`are much reduced.” Wang, col. 7, lines
`47 – 49.
`
`
`
`
`
`15
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`Wang’s Fig. 6
`
`Weak Plasma Is Not Created
`By A Pulse
`
`It is Ignited by the Con?nuous
`DC Power Supply
`
`
`
`16
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`‘421 Patent: Rise Time
`
`Claim 12
`
`Claim 24
`
`The spuhering source of claim 1
`wherein a rise Ime of the voltage pulse
`is chosen to increase an ionizaIon rate
`
`of the strongly-‐ionized plasma.
`
`The spuhering source of claim 17
`wherein a rise Ime of the voltage pulse
`is chosen to increase an ionizaIon rate
`
`of the strongly-‐ionized plasma.
`
`“The shape and dura?on of the leading edge 356 and the trailing edge 358
`of the high-‐power pulse 354 is chosen so as to sustain the weakly-‐ionized
`plasma 262 while controlling the rate of ionizaIon of the strongly-‐ionized
`plasma 268.” Ex. 1001, ‘421 patent, col. 16, lines 61 -‐ 64.
`
`
`
`17
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`‘421 Patent: Flow Control/Power Increase
`
`Claim 7
`The spuhering source of claim 6
`wherein the gas flow controller controls
`the flow of the feed gas to allow
`addi?onal power to be absorbed by the
`strongly ionized plasma, thereby
`generaIng addiIonal thermal energy in
`
`the spuhering target.
`
`Claim 32
`The spuhering source of claim 31 wherein
`the gas flow controller controls the flow
`of the feed gas to allow addi?onal power
`to be absorbed by the strongly ionized
`plasma, thereby generaIng addiIonal
`
`thermal energy in the spuhering target.
`
`
`
`18
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`‘421 Patent: Flow Control/Power Increase
`
`“The level and duraIon of the high power electrical pulse is limited
`by the level and dura?on of the power that the strongly-‐ionized
`plasma 268 can absorb before the high power discharge contracts
`and terminates. In one embodiment, the strength and the dura?on
`of the high-‐power electrical pulse are increased and thus the
`density of the strongly-‐ionized plasma 268 is increased by increasing
`the flow rate of the feed gas 256.” Ex. 1001, ‘421 patent, col. 14, lines 26 -‐ 33.
`
`
`
`
`
`19
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`‘421 Patent: Flow Control/Power Increase
`
`• “Increasing the flow rate of the gas allows longer dura?on impulses and
`thus, can result in the formaIon higher density plasmas.” Ex. 1001, ‘421 patent,
`col. 8, lines 10 -‐ 12.
`
` •
`
`
`
` “This causes a rapid volume exchange in the region 245 between the
`cathode assembly 216 and the anode 238, which permits a high power
`pulse having a longer dura?on to be applied across the gap 244. The
`longer duraIon high power pulse results in the formaIon of more dense
`plasma.” Ex. 1001, ‘421 patent, col. 11, lines 2 -‐ 8 .
`
`
`
`20
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`Wang/Lantsman Do Not Teach
` Such Flow Control
`“Wang’s feed gas entrance locaIon, by the wafer 20 / pedestal electrode 18, cannot
`diffuse the strongly-‐ionized plasma in any manner conducive to enhancing power
`absorpIon by the strongly-‐ionized plasma. Lantsman makes no men?on of any
`control of a feed gas to cause a plasma to spread. Therefore neither of these
`references teach or suggest that the diffusion of plasma (as described in claims 6, 31)
`could disperse a plasma to a sufficient degree that it could allow addiIonal power to
`be absorbed, while sIll complying with the other requirements of the claimed
`spuhering source concerning arc avoidance and the increase of thermal energy to a
`spuher target.”
`
`Dr. Hartsough, Zond Ex. 2015, par. 1123
`
`
`
`21
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`Wang’s Does Not Teach
`Flow Control
`
`
`Q. Well, does -‐-‐ does Wang ever suggest increasing the flow rate once a
`strongly-‐ionized plasma is formed?
`
`
`
` A. I do not recall Wang discussing an increase of the flow rate auer the
`formaIon of strongly-‐ionized plasma.
`
` Q. So the rate of -‐-‐ is it true then that the rate of diffusion of the feed gas
`from the inlet to the region with the strongly-‐ionized plasma is, would be
`essenIally constant in Wang's system?
`
` A. It could be essenIally constant. There are other factors which could, in
`fact, influence that rate as well.
`
`
`Dr. Overzet DeposiEon, Zond Ex. 2018, Page 159, lines 14 -‐ 25
`
`
`
`22
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`‘421 Patent: Flow Control/Plasma Diffusion
`
`Claim 31
`The spuhering source of claim 1 further
`comprising
`
` a
`
` gas flow controller that controls a flow
`of the feed gas
`
` so that the feed gas diffuses the strongly-‐
`
`ionized plasma.
`
`Claim 6
`The spuhering source of claim 1 further
`comprising
`
` a
`
` gas flow controller that controls a
`flow of the feed gas
`
`so that the feed gas diffuses the
`
`strongly-‐ionized plasma.
`
`
`
`23
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
`
`
`
`‘421 Patent: Gas Exchange During Pulse
`
`Claim 45
`
`The method of claim 34 further comprising
`exchanging a volume of feed gas to diffuse the strongly-‐ionized plasma
`while applying the voltage pulse to the cathode assembly to generate
`
`addi?onal strongly-‐ionized plasma from the volume of the feed gas.
`
`
`
`24
`
`Fujitsu et. al. v. Zond
`PR Nos. 2014-00800; 2014-00802; 2014-00805
`Zond Exhibit 2019
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