`Trials@uspto.gov
`571-272-7822
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` Entered: October 1, 2014
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`
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`UNITED STATES PATENT AND TRADEMARK OFFICE
`____________
`
`BEFORE THE PATENT TRIAL AND APPEAL BOARD
`____________
`
`TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
`and TSMC NORTH AMERICA CORPORATION,
`Petitioners,
`
`v.
`
`ZOND, LLC,
`Patent Owner.
`____________
`
`Case IPR2014-00782
`Patent 7,147,759 B2
`____________
`
`
`
`
`Before KEVIN F. TURNER, DEBRA K. STEPHENS, JONI Y. CHANG,
`SUSAN L.C. MITCHELL, and JENNIFER M. MEYER,
`Administrative Patent Judges.
`
`
`CHANG, Administrative Patent Judge.
`
`DECISION
`Institution of Inter Partes Review
`37 C.F.R. § 42.108
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`IPR2014-00782
`Patent 7,147,759 B2
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`I. INTRODUCTION
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`Taiwan Semiconductor Manufacturing Company, Ltd. and TSMC
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`North America Corporation (collectively, “TSMC”) filed a Petition
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`requesting an inter partes review of claims 22–33, 37, 46, 48, and 50 of U.S.
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`Patent No. 7,147,759 B2 (Ex. 1301, “the ’759 patent”). Paper 2 (“Pet.”);
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`Paper 3. Zond, LLC (“Zond”), filed a Preliminary Response. Paper 9
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`(“Prelim. Resp.”).
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`We have jurisdiction under 35 U.S.C. § 314. The standard for
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`instituting an inter partes review is set forth in 35 U.S.C. § 314(a), which
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`provides:
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`THRESHOLD.—The Director may not authorize an inter
`partes review to be instituted unless the Director determines
`that the information presented in the petition filed under section
`311 and any response filed under section 313 shows that there
`is a reasonable likelihood that the petitioner would prevail with
`respect to at least 1 of the claims challenged in the petition.
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`Upon consideration of the Petition and Preliminary Response, we
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`conclude that the information presented in the Petition demonstrates that
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`there is a reasonable likelihood that TSMC would prevail in challenging
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`claims 22–33, 37, 46, 48, and 50 as unpatentable under 35 U.S.C. § 103(a).
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`Pursuant to 35 U.S.C. § 314, we hereby authorize an inter partes review to
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`be instituted as to claims 22–33, 37, 46, 48, and 50 of the ’759 patent.
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`A. Related District Court Proceedings
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`TSMC indicates that the ’759 patent was asserted in Zond, LLC v.
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`Fujitsu, No.1:13-cv-11634-WGY (D. Mass.). Pet. 1. TSMC also identifies
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`other proceedings in which Zond asserted the ’759 patent. Id.
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`B. Related Inter Partes Reviews
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`Intel Corporation (“Intel”) filed a Petition to institute an inter partes
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`review in Intel Corp. v. Zond, LLC., Case IPR2014-00446, challenging the
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`same claims based on the same grounds of unpatentability as those in the
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`instant proceeding. Compare IPR2014-00446, Paper 4 (“’446 Pet.”), 2–60,
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`with Pet. 3–60. On August 27, 2014, we instituted an inter partes review of
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`claims 22–33, 37, 46, 48, and 50 of the ’759 patent in IPR2014-00446.
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`The trial, however, was terminated in light of the Written Settlement
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`Agreement, made in connection with the termination of the proceeding in
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`accordance with 35 U.S.C. § 317(b) and 37 C.F.R. § 42.74(b), between Intel
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`and Zond. In view of the termination of Intel’s proceeding, TSMC’s Motion
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`for Joinder, seeking to join the instant proceeding with IPR2014-00445, is
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`dismissed as moot, in a separate decision. Papers 8, 13.
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`The following Petitions for inter partes review also challenge the
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`same claims based on the same grounds of unpatentability as those in
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`IPR2014-00446 and in the instant proceeding: Fujitsu Semiconductor Ltd. v.
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`Zond, LLC, Case IPR2014-00850; The Gillette Co. v Zond, LLC,
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`Case IPR2014-00986; and Advanced Micro Devices, Inc. v. Zond, LLC, Case
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`IPR2014-01059.
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`C. The ’759 patent
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`The ’759 patent relates to a high-power pulsed magnetron sputtering
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`method. Ex. 1301, Abs. At the time of the invention, sputtering was a well-
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`known technique for depositing films on semiconductor substrates. Id. at
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`1:6–13. The ’759 patent indicates that prior art magnetron sputtering
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`systems deposit films having low uniformity and poor target utilization (the
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`target material erodes in a non-uniform manner). Id. at 1:55–62. To address
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`these problems, the ’759 patent discloses that increasing the power applied
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`between the target and anode can increase the amount of ionized gas and,
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`therefore, increase the target utilization. Id. at 2:60–62. However,
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`increasing the power also “increases the probability of establishing an
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`undesirable electrical discharge (an electrical arc) in the process chamber.”
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`Id. at 2:63–67.
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`According to the ’759 patent, forming a weakly-ionized plasma
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`substantially eliminates the probability of establishing a breakdown
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`condition in the chamber when high-power pulses are applied between the
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`cathode and anode. Id. at 7:17–21. Once the weakly-ionized plasma is
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`formed, high-power pulses are applied between the cathode and anode to
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`generate a strongly-ionized plasma from the weakly-ionized plasma. Id. at
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`7:27–30, 7:65–66.
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`D. Illustrative Claims
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`Claims 22–33, 37, 46, 48, and 50 depend, directly or indirectly, from
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`claim 20. Claims 20 and 32, reproduced below, are illustrative:
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`20. A method of generating sputtering flux, the method
`comprising:
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`a) ionizing a feed gas to generate a weakly-ionized plasma
`proximate to a sputtering target;
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`b) generating a magnetic field proximate to the weakly-ionized
`plasma, the magnetic field substantially trapping electrons in
`the weakly-ionized plasma proximate to the sputtering target;
`and
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`c) applying a voltage pulse to the weakly-ionized plasma, an
`amplitude and a rise time of the voltage pulse being chosen to
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`increase an excitation rate of ground state atoms that are
`present in the weakly-ionized plasma to create a multi-step
`ionization process that generates a strongly-ionized plasma,
`which comprises ions that sputter target material, from the
`the multi-step
`ionization process
`weakly-ionized plasma,
`comprising exciting the ground state atoms to generate excited
`atoms, and then ionizing the excited atoms within the weakly-
`ionized plasma without forming an arc discharge.
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`Ex. 1301, 22:41–61 (emphases added).
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`32. The method of claim 20 wherein the peak plasma density of
`the weakly-ionized plasma is less than about 1012 cm-3.
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`Id. at 23:33–35.
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`E. Prior Art Relied Upon
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`TSMC relies upon the following prior art references:
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`Wang
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`US 6,413,382 B1
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` July 2, 2002
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`(Ex. 1305)
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`D.V. Mozgrin, et al., High-Current Low-Pressure Quasi-Stationary
`Discharge in a Magnetic Field: Experimental Research, 21 PLASMA
`PHYSICS REPORTS 400–409 (1995) (Ex. 1303, “Mozgrin”).
`
`
`A.A. Kudryavtsev and V.N. Skrebov, Ionization Relaxation in a
`Plasma Produced by a Pulsed Inert-Gas Discharge, 28(1) SOV. PHYS.
`TECH. PHYS. 30–35 (1983) (Ex. 1304, “Kudryavtsev”).
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`F. Asserted Grounds of Unpatentability
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`TSMC asserts the following grounds of unpatentability:
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`Claims
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`Basis
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`References
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`22, 23, 37, 46, 48, 50
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`§ 103(a) Mozgrin and Kudryavtsev
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`22–26, 28–31, 37, 46, 48
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`§ 103(a) Wang and Kudryavtsev
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`27, 32, 33, 50
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`§ 103(a) Wang, Kudryavtsev, and Mozgrin
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`II. ANALYSIS
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`A. Claim Construction
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`In an inter partes review, claim terms in an unexpired patent are given
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`their broadest reasonable construction in light of the specification of the
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`patent in which they appear. 37 C.F.R. § 42.100(b). Claim terms are given
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`their ordinary and customary meaning as would be understood by one of
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`ordinary skill in the art in the context of the entire disclosure. In re
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`Translogic Tech., Inc., 504 F.3d 1249, 1257 (Fed. Cir. 2007). An inventor
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`may rebut that presumption by providing a definition of the term in the
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`specification with reasonable clarity, deliberateness, and precision. In re
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`Paulsen, 30 F.3d 1475, 1480 (Fed. Cir. 1994). In the absence of such a
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`definition, limitations are not to be read from the specification into the
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`claims. In re Van Geuns, 988 F.2d 1181, 1184 (Fed. Cir. 1993).
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`In the instant proceeding, the parties propose claim constructions for
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`three claim terms. Pet. 15–18; Prelim. Resp. 16–21. We address each of the
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`claim terms identified by the parties in turn.
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`
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`1. “weakly-ionized plasma” and “strongly-ionized plasma”
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`Claim 20 recites “applying a voltage pulse to the weakly-ionized
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`plasma, an amplitude and a rise time of the voltage pulse being chosen to
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`increase an excitation rate of ground state atoms that are present in the
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`weakly-ionized plasma to create a multi-step ionization process that
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`generates a strongly-ionized plasma.” TSMC proposes that the claim term
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`“weakly-ionized plasma” should be interpreted as “a lower density plasma,”
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`and that the claim term “strongly-ionized plasma” should be interpreted as
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`“a higher density plasma.” Pet. 16 (emphasis omitted). TSMC’s contention
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`is supported by the declaration of Dr. Uwe Kortshagen. Id. (citing
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`Ex. 1302). In his declaration, Dr. Kortshagen defines the term “density” in
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`the context of plasma as “the number of ions or electrons that are present in
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`a unit volume.” Ex. 1302 ¶ 21.
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`In its Preliminary Response, Zond proposes that the claim term
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`“weakly-ionized plasma” should be construed as “a plasma with a relatively
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`low peak density of ions,” and that the claim term “strongly-ionized plasma”
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`should be construed as “a plasma with a relatively high peak density of
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`ions.” Prelim. Resp. 17–18 (citing Ex. 1301, 10:4–5 (“This rapid ionization
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`results in a strongly-ionized plasma having a large ion density being formed
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`in an area proximate to the cathode assembly 216.”)). Zond also directs our
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`attention to the Specification of U.S. Patent No. 6,806,652 B1 (“the ’652
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`patent”), which is being challenged in Taiwan Semiconductor Manuf. Co.,
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`Ltd. v. Zond, Inc., IPR2014-00861. Id. at 18.
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`The Specification of the ’652 patent provides:
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`The high-power pulses generate a high-density plasma
`from the initial plasma. The term “high-density plasma” is also
`referred to as a “strongly-ionized plasma.” The terms “high-
`density plasma” and “strongly-ionized plasma” are defined
`herein to mean a plasma with a relatively high peak plasma
`density. For example, the peak plasma density of the high-
`density plasma is greater than about 1012 cm-3. The discharge
`current that is formed from the high-density plasma can be on
`the order of about 5 kA with a discharge voltage that is in the
`range of about 50V to 500V for a pressure that is in the range of
`about 5 mTorr to 10 Torr.
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`IPR2014-00843, Ex. 1301, 10:57–67.
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`We recognize when construing claims in patents that derive from the
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`same parent application and share common terms, “we must interpret the
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`claims consistently across all asserted patents.” NTP, Inc. v. Research In
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`Motion, Ltd., 418 F.3d 1282, 1293 (Fed. Cir. 2005) (citation omitted). Here,
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`although Zond characterizes the ’652 patent as “a related patent” (Prelim.
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`Resp. 18), Zond does not explain how the ’652 patent is related to the
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`involved patent in the instant proceeding (i.e., the ’759 patent). In fact,
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`those patents do not share the same written disclosure, nor do they derive
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`from the same parent application.
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`Nevertheless, we observe no significant difference exists between the
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`parties’ constructions. Pet. 16; Ex. 1302 ¶ 21; Prelim. Resp. 17–18. More
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`importantly, the claim terms “weakly-ionized plasma” and “strongly-ionized
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`plasma” appear to be used consistently across both the ’652 and the ’759
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`patents. See, e.g., Ex. 1301, 6:30–38. For this decision, we construe the
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`claim term “weakly-ionized plasma” as “a plasma with a relatively low peak
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`density of ions,” and the claim term “strongly-ionized plasma” as “a plasma
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`with a relatively high peak density of ions.”
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`2. “multi-step ionization process”
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`Claim 20 recites “the multi-step ionization process comprising
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`exciting the ground state atoms to generate excited atoms, and then ionizing
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`the excited atoms within the weakly-ionized plasma without forming an arc
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`discharge.” TSMC asserts that the claim term “multi-step ionization
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`process” should be interpreted as “an ionization process in which a
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`statistically significant portion of the ions are produced by exciting ground
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`state atoms or molecules and then ionizing the excited atoms or molecules.”
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`Pet. 17–18 (emphasis omitted).
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`Zond responds that TSMC’s proposed construction would render the
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`other language recited in the claim (e.g., “exciting the ground state atoms to
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`generate excited atoms”) superfluous. Prelim. Resp. 19–20. Instead, Zond
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`asserts that the claim term “multi-step ionization process” should be
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`construed as “an ionization process having at least two distinct steps.” Id. at
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`20 (citing Ex. 1301, 9:18–36).
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`On this record, we adopt Zond’s proposed construction for the claim
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`term “multi-step ionization process,” as the broadest reasonable
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`interpretation for this decision, consistent with the Specification of the ’759
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`patent. See, e.g., Ex. 1301, 9:18–36. Moreover, it does not import
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`improperly a limitation (e.g., a statistically significant portion of the ions are
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`produced) into the claims. It is well settled that if a feature is not necessary
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`to give meaning to what the inventor means by a claim term, it is
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`“extraneous” and should not be read into the claim. Renishaw PLC v.
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`Marposs Societa’ per Azioni, 158 F.3d 1243, 1249 (Fed. Cir. 1998); E.I. du
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`Pont de Nemours & Co. v. Phillips Petroleum Co., 849 F.2d 1430, 1433
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`(Fed. Cir. 1988).
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`B. Principles of Law
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`A patent claim is unpatentable under 35 U.S.C. § 103(a) if the
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`differences between the claimed subject matter and the prior art are such that
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`the subject matter, as a whole, would have been obvious at the time the
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`invention was made to a person having ordinary skill in the art to which said
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`subject matter pertains. KSR Int’l Co. v. Teleflex Inc., 550 U.S. 398, 406
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`(2007). The question of obviousness is resolved on the basis of underlying
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`factual determinations including: (1) the scope and content of the prior art;
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`(2) any differences between the claimed subject matter and the prior art;
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`(3) the level of ordinary skill in the art; and (4) objective evidence of
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`nonobviousness. Graham v. John Deere Co., 383 U.S. 1, 17–18 (1966).
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`In that regard, an obviousness analysis “need not seek out precise
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`teachings directed to the specific subject matter of the challenged claim, for
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`a court can take account of the inferences and creative steps that a person of
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`ordinary skill in the art would employ.” KSR, 550 U.S. at 418; see also
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`Translogic, 504 F.3d at 1259. A prima facie case of obviousness is
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`established when the prior art itself would appear to have suggested the
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`claimed subject matter to a person of ordinary skill in the art. In re Rinehart,
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`531 F.2d 1048, 1051 (CCPA 1976). The level of ordinary skill in the art is
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`reflected by the prior art of record. See Okajima v. Bourdeau,
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`261 F.3d 1350, 1355 (Fed. Cir. 2001); In re GPAC Inc., 57 F.3d 1573, 1579
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`(Fed. Cir. 1995); In re Oelrich, 579 F.2d 86, 91 (CCPA 1978).
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`We analyze the asserted grounds of unpatentability in accordance with
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`the above-stated principles.
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`C. Claims 22–26, 28–31, 37, 46, and 48—Obviousness over the
`Combination of Wang and Kudryavtsev
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`TSMC asserts that claims 22–26, 28–31, 37, 46, and 48 are
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`unpatentable under 35 U.S.C. § 103(a) as obvious over the combination of
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`Wang and Kudryavtsev. Pet. 38–53. As support, TSMC provides detailed
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`explanations as to how each claim limitation is met by the references and
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`rationales for combining the references, as well as a declaration of
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`Dr. Kortshagen. Id. (citing Ex. 1302).
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`Zond responds that the combination of Wang and Kudryavtsev does
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`not disclose every claim element. Prelim. Resp. 41–53. Zond also argues
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`that there is insufficient reason to combine the technical disclosures of Wang
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`and Kudryavtsev. Id. at 21–41.
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`We have reviewed the parties’ contentions and supporting evidence.
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`Given the evidence on this record, we determine that TSMC has
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`demonstrated a reasonable likelihood of prevailing on its assertion that
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`claims 22–26, 28–31, 37, 46, and 48 are unpatentable over the combination
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`of Wang and Kudryavtsev. Our analysis focuses on the deficiencies alleged
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`by Zond as to the claims.
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`Wang
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`Wang discloses a power pulsed magnetron sputtering method for
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`generating a very high plasma density. Ex. 1305, Abs. In particular, Wang
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`discloses a sputtering method for depositing metal layers onto advanced
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`semiconductor integrated circuit structures. Id. at 1:4–15. Figure 1 of
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`Wang, reproduced below, illustrates a cross-sectional view of a power
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`pulsed magnetron sputtering reactor.
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`As shown in Figure 1 of Wang, magnetron sputtering apparatus 10
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`includes anode 24, cathode 14, magnet assembly 40, pulsed DC power
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`supply 80, as well as pedestal 18 for supporting semiconductor substrate 20.
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`Id. at 3:57–4:55. According to Wang, the apparatus creates high density
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`plasma in region 42, which ionizes a substantial fraction of the sputtered
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`particles into positively charged metal ions and also increases the sputtering
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`rate. Id. at 4:13–34. Magnet assembly 40 creates a magnetic field near
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`target 14, which traps electrons from the plasma to increase the electron
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`density. Id. at 4:23–27. Wang further recognizes that, if a large portion of
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`the sputtered particles are ionized, the films are deposited more uniformly
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`and effectively—the sputtered ions can be accelerated towards a negatively
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`charged substrate, coating the bottom and sides of holes that are narrow and
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`deep. Id. at 1:24–29.
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`Figure 6 of Wang, reproduced below, illustrates how the apparatus
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`applies a pulsed power to the plasma:
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`As shown in Figure 6 of Wang, the target is maintained at background
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`power level PB between high power pulses 96 with peak power level PP. Id.
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`at 7:13–39. Background power level PB exceeds the minimum power
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`necessary to support a plasma in the chamber at the operational pressure
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`(e.g., 1kW). Id. Peak power PP is at least 10 times (preferably 100 or 1000
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`times) background power level PB. Id. The application of high peak power
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`PP causes the existing plasma to spread quickly, and increases the density of
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`the plasma. Id. According to Dr. Kortshagen, Wang’s apparatus generates a
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`low-density (weakly-ionized) plasma during the application of background
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`power PB, and a high-density plasma during the application of peak power
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`PP. Ex. 1302 ¶ 138.
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`Kudryavtsev
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`Kudryavtsev discloses a multi-step ionization plasma process,
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`comprising the steps of exciting the ground state atoms to generate excited
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`atoms, and then ionizing the excited atoms. Ex. 1304, Abs., Figs. 1, 6.
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`Figure 1 of Kudryavtsev, reproduced below (with annotations added by
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`TSMC (Pet. 26)), illustrates the atomic energy levels during the slow and
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`fast stages of ionization:
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`As shown in annotated Figure 1 of Kudryavtsev, ionization occurs
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`with a “slow stage” (Fig. 1a) followed by a “fast stage” (Fig. 1b). During
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`the initial slow stage, direct ionization provides a significant contribution to
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`the generation of plasma ions (arrow Γ1e showing ionization (top line labeled
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`“e”) from the ground state (bottom line labeled “1”)). Dr. Kortshagen
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`explains that Kudryavtsev shows the rapid increase in ionization once multi-
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`step ionization becomes the dominant process. Ex. 1302 ¶ 78; Pet. 27–28.
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`Indeed, Kudryavtsev discloses:
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`For nearly stationary n2 [excited atom density] values . . . there
`is an explosive increase in ne [plasma density]. The subsequent
`increase in ne then reaches its maximum value, equal to the rate
`of excitation . . . which is several orders of magnitude greater
`than the ionization rate during the initial stage.
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`Ex. 1304, 31, right col., ¶ 6 (emphasis added). Kudryavtsev also recognizes
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`that “in a pulsed inert-gas discharge plasma at moderate pressures . . . [i]t is
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`shown that the electron density increases explosively in time due to
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`accumulation of atoms in the lowest excited states.” Id. at 30, Abs., Fig. 6.
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`Reasons to combine Wang and Kudryavtsev
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`TSMC asserts that the combination of Wang and Kudryavtsev
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`discloses the “voltage pulse” and “multi-step ionization process” claim
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`features recited in claim 20. Pet. 41–46 (citing Ex. 1302 ¶¶ 133–144).
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`TSMC acknowledges that Wang does not disclose expressly a voltage pulse
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`that “increases an excitation rate of ground state atoms that are present in the
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`weakly-ionized plasma to create a multi-step ionization process.” Pet. 44–
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`46. Nonetheless, TSMC contends that such an increase in excitation rate of
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`ground state atoms in a multi-step ionization process was well known in the
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`art at the time of the invention, as evidenced by Kudryavtsev. Id. at 44–45
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`(citing Ex. 1302 ¶ 139); see also id. at 25–27. TSMC submits that it would
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`have been obvious to one with ordinary skill in the art to adjust Wang’s
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`operating parameters (e.g., to increase the pulse length of the power and/or
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`the pressure of the gas inside the chamber) to trigger a fast stage of
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`ionization. Id. at 44. According to TSMC, triggering such a fast stage of
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`ionization in Wang’s apparatus would increase plasma density and, thereby,
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`would increase the sputtering rate, and reduce the time required to reach a
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`given plasma density. Id. at 44–45.
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`Zond, however, disagrees that it would have been obvious to combine
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`the references, arguing Wang’s magnetron sputtering apparatus differs
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`significantly from Kudryavtsev’s plasma apparatus. Prelim. Resp. 35–41.
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`In particular, Zond argues “the electron fluxes for the slow and fast stages of
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`Kudryavtsev’s system . . . would be substantially different in a system that
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`uses magnets and magnetic fields like . . . Wang’s system.” Id. at 38.
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`Given the evidence on this record, those arguments are not persuasive.
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`“It is well-established that a determination of obviousness based on
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`teachings from multiple references does not require an actual, physical
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`substitution of elements.” In re Mouttet, 686 F.3d 1322, 1332 (Fed. Cir.
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`2012) (citing In re Etter, 756 F.2d 852, 859 (Fed. Cir. 1985) (en banc)
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`(noting that the criterion for obviousness is not whether the references can
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`be combined physically, but whether the claimed invention is rendered
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`obvious by the teachings of the prior art as a whole)). In that regard, one
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`with ordinary skill in the art is not compelled to follow blindly the teaching
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`of one prior art reference over the other without the exercise of independent
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`judgment. Lear Siegler, Inc. v. Aeroquip Corp., 733 F.2d 881, 889 (Fed.
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`Cir. 1984); see also KSR, 550 U.S. at 420–21 (A person with ordinary skill
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`in the art is “a person of ordinary creativity, not an automaton,” and “in
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`many cases . . . will be able to fit the teachings of multiple patents together
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`like pieces of a puzzle.”).
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`Zond has not explained adequately why triggering a fast stage of
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`ionization in Wang’s apparatus would have been beyond the level of
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`ordinary skill, or why one of ordinary skill in the art would not have had a
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`reasonable expectation of success in combining the teachings. Kudryavtsev
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`states that because “the effects studied in this work are characteristic of
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`ionization whenever a field is suddenly applied to a weakly ionized gas, they
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`must be allowed for when studying emission mechanisms in pulsed gas
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`lasers, gas breakdown, laser sparks, etc.” Ex. 1304, 34, right col. (emphasis
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`added). Wang applies voltage pulses that suddenly generate an electric field.
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`Ex. 1305, 7:61–63; see also Ex. 1302 ¶ 147. More importantly, Wang
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`discloses background power PB of 1 kW (falling within the range of 0.1–100
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`kW, as disclosed in the ’759 patent, for generating a weakly-ionized
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`plasma), and pulse peak power PP of 1 MW (falling within the range of
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`1kW–10 MW, as disclosed in the ’759 patent, for generating a
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`strongly-ionized plasma). Ex. 1305, 7:19–25; Ex. 1301, 11:52–58, 12:24–
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`36, Fig. 5. Dr. Kortshagen testifies that “[b]ecause Wang’s power levels fall
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`within the ranges disclosed by the ’759 Patent, Wang is as likely as is the
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`’759 patent to increase the excitation rate of ground state atoms within the
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`weakly-ionized plasma and to cause multi-step ionization.” Ex. 1302 ¶ 138.
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`On this record, we credit Dr. Kortshagen’s testimony, as it is
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`consistent with the prior art disclosures. We also agree with Dr. Kortshagen
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`that triggering a fast stage of ionization (as disclosed by Kudryavtsev) in
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`Wang’s apparatus would have been a combination of known techniques
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`yielding the predictable results of increasing plasma density and the degree
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`of multi-step ionization. See Ex. 1302 ¶ 139.
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`Given the evidence before us, we determine that the Petition and
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`supporting evidence demonstrate sufficiently that combining the technical
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`disclosures of Wang and Kudryavtsev is merely a predicable use of prior art
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`elements according to their established functions—an obvious improvement.
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`See KSR, 550 U.S. at 417 (“[I]f a technique has been used to improve one
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`device, and a person of ordinary skill in the art would recognize that it would
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`improve similar devices in the same way, using the technique is obvious
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`unless its actual application is beyond his or her skill.”).
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`Voltage pulse
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`In its Preliminary Response, Zond alleges that the combination of
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`Wang and Kudryavtsev would not have suggested generation of a “voltage
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`pulse” as recited in claim 20. Prelim. Resp. 45–49. In particular, Zond
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`argues that Wang discloses a power pulse, rather than a voltage pulse. Id.
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`at 47. However, as TSMC indicates in its Petition, Wang, in fact, discloses a
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`pulsed DC power supply connected to the target that “produces a train of
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`negative voltage pulses.” Pet. 41–43 (citing Ex. 1305, 7:61–62 (emphasis
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`added), Fig. 7). Dr. Kortshagen explains that “[t]hose voltage pulses create
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`Wang’s peak power pulses, PP, which are applied to Wang’s weakly-ionized
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`plasma, i.e., the plasma generated by the background power, PB.” Ex. 1302
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`¶ 132. Given the evidence on this record, we are not persuaded by Zond’s
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`argument.
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`Zond further contends that neither Kudryavtsev nor Wang discloses
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`choosing the amplitude and rise time of the voltage pulse “to increase an
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`excitation rate of ground state atoms that are present in the weakly ionized
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`plasma to create a multi-step ionization process,” as recited in claim 20.
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`Prelim. Resp. 42–49. However, that argument does not address what is
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`taught by the combination of Wang and Kudryavtsev. Nonobviousness
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`cannot be established by attacking references individually where, as here,
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`the ground of unpatentability is based upon the teachings of a combination
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`of references. In re Keller, 642 F.2d 413, 426 (CCPA 1981). Rather, the
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`test for obviousness is whether the combination of references, taken as a
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`whole, would have suggested the patentees’ invention to a person having
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`ordinary skill in the art. In re Merck & Co., Inc., 800 F.2d 1091, 1097 (Fed.
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`Cir. 1986).
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`Here, TSMC relies upon the combination of Wang and Kudryavtsev
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`to disclose “applying a voltage pulse to the weakly-ionized plasma, an
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`amplitude and a rise time of the voltage pulse being chosen to increase an
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`excitation rate of ground state atoms that are present in the weakly-ionized
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`plasma to create a multi-step ionization process.” Pet. 46–51. According to
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`TSMC, the collective technical disclosures of Wang and Kudryavtsev would
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`have suggested to one with ordinary skill in the art to select an amplitude
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`and rise time of the voltage pulse that would increase the excitation rate and
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`ionization rate of metal atoms in the plasma. Pet. 42–46. Indeed,
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`Kudryavtsev discloses a multi-step ionization plasma process, comprising
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`the steps of exciting the ground state atoms to generate excited atoms, and
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`then ionizing the excited atoms. Ex. 1304, Abs., Figs. 1, 6. Wang discloses
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`that applying high-power pulses to the target would increase the ionization
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`rate of the metal atoms. See, e.g., Ex. 1305, 2:42–3:4, 5:7–17.
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`As TSMC points out, Wang expressly discloses selecting a pulse peak
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`power of 1 MW (within the ’759 patent’s range of 1kW – 10 MW for
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`generating a strongly-ionized plasma). Pet. 43–44 (citing Ex. 1305, 7:19–25
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`(“Preferably, the peak power level PP is at least 10 times the background
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`power level PB, . . . most preferably 1000 times to achieve the greatest
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`effects of the invention.”)). Figure 4 of Wang illustrates an idealized pulse
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`form—having a very short rise time as the slope of each power pulse 82 is
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`perpendicular. Ex. 1305, 5:23–26. Wang explains that the exact shape of
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`the voltage pulse depends on the design of the pulsed power supply and
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`“significant rise times and fall times are expected.” Id. at 5:24–29. Wang
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`also provides an example of a rise time of over 50 µs. Id. at 5:29–36. As
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`discussed above, TSMC has provided sufficient reasons to combine the
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`technical disclosures of Wang and Kudryavtsev. Zond does not explain
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`adequately why those prior art disclosures would not have suggested to a
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`person having ordinary skill in the art to select an amplitude and rise time of
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`Wang’s voltage pulse that would increase the excitation rate and ionization
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`rate of metal atoms in the plasma.
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`For the foregoing reasons, we determine that TSMC has demonstrated
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`sufficiently that the combination of Wang and Kudryavtsev would have
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`suggested to a person having ordinary skill in the art the “voltage pulse”
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`claim features.
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`Generating a multi-step ionization process without forming an arc discharge
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`Zond further argues that Wang does not teach a “multi-step ionization
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`process comprising exciting the ground state atoms to generate excited
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`atoms, and then ionizing the excited atoms within the weakly-ionized plasma
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`without forming an arc discharge,” as required by claim 20. Prelim. Resp.
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`49–53 (emphasis added). In particular, Zond contends that “Wang does not
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`state that arcing does not occur while the ground state atoms are excited to
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`generate excited atoms or while the excited atoms are ionized,” but rather
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`Wang discloses that the “particulates produced by arcing are much
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`reduced,” suggesting that arcing will continue to occur after ignition. Id. at
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`51–52 (citing Ex. 1305, 7:47–55 (emphasis added by Zond)).
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`We are not persuaded by Zond’s arguments. Zond again attacks the
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`references individually, and fails to consider the combination of Wang and
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`Kudryavtsev, taken as a whole. See Merck, 800 F.2d at 1097. Zond’s
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`arguments also are predicated on an overly narrow reading of the prior art
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`without sufficient consideration of the knowledge of a person having
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`ordinary skill in the art. See Paulsen, 30 F.3d at 1480 (Prior art references
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`must be “considered together with the knowledge of one of ordinary skill in
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`the pertinent art.”). Furthermore, Zond’s arguments are inconsistent with the
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`Specification of the ’759 patent.
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`Notably, the Specification of the ’759 patent does not recite the claim
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`language “without forming an arc discharge.” Rather, it merely discloses a
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`process that reduces or substantially elim