08/1412004 MON 22:40 FAX 781 271 1527 KURT RAUSCHENBACH
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`I 4
`
`006/028
`
`RECEIVED
`GEHWRL FAX canes
`
`Attorney Docket No.-. ZON-001
`
`PATENT
`
`,"—'1r]‘/'i‘:_:' nfl
`©i3l“*M;’3ts
`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`APPLICANT:
`
`Roman Chistyakov
`
`SERIAL N0;
`FILING DATE:
`TITLE:
`
`1753
`GROUP NO.:
`10/065,277
`McDonald, Rodney G.
`EXAMINER;
`September 30, 2002
`PUGT-T—POWER PULSED MAGNETRON SPUTTERTNG
`
`Commissioner for Patents
`Alexandria, Virginia 22313-1450
`
`AIVIENDMENT AND RESPONSE
`
`Sir:
`
`The following amendments and remarks are responsive to the Office Action mailed on
`January 15, 2004 in the above-identified patent application. Entry and consideration ofthe
`following amendments and remarks, and allowance ofthe claims, as presented, are respectfully_
`requested. A Petition for 21 two—n1onth extension oftirne, up to and including Tuesday, June 15,
`2004 is submitted herewith. The Commissioner is hereby authorized to charge the extension fee,
`the additional claims fee, and any other proper fees to Attorney's Deposit Account No. 501211.
`
`Please enter the following amendments and consider the remarks that follow.
`
`PAGE EH6‘ RCVDAT fi!14l20fl4 10:56:05 PM [EasternDaylightTime] ‘ SVR:USPTO-EFXRF-1!B* DN|S:8?293U5*CSlD:i8l 271 152?‘ DURATION (mm-ss):08-12 C-1 207
` nd, Inc.
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`Page 1 of 21
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`TSMC-1207
`TSMC v. Zond, Inc.
`Page 1 of 21
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`06/14/2004 MON 22:40 FAX 781 271 1527 KURT RAUSCHENBACH
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`007/028
`
`Amendment and Response
`Applicant: Chistyakov
`Serial Nu.: 10I065,739
`Page 2 of 20
`
`Amendments to the Claims:
`
`Please amend claims 1, 4, 5, 6, 8, 12, 16, 19, 21, 25, and 27-30, cancel claims 3 and 18
`
`without prejudice, and add claims 31-39 as follows.
`
`I.
`
`(currently amended) A sputtering source comprising:
`
`a cathode assembly that is positioned adjacent to an anode, the cathode assembly
`
`including a sputtering target;
`
`an ionization source that generates :1 weakly-ionized plasma proximate to the anode and
`
`the cathode assembly; and
`
`a power supply that generates a voltage’pul§§ hmween the
`anode and the cathode usembly mat creatging a strongly-ionized
`
`plasma from the weakly-ionized plasma, an amplitude and a rise time of the voltage pulse
`gg
`a ~=olame—densitg of ions
`in the strong1y—ioni:r.ed plasma
`generate
`
`g
`
`sufficient thermal energy in the sputtering target to cause a sputtering yield of the
`
`sputtering target to be non-linearly related to a temperature of the sputtering target.
`
`2.
`
`(original) The sputtering source of claim 1 wherein the electric field comprises a quasi-
`
`3.
`
`4.
`
`static electric field.
`
`(cancelled).
`
`(currently amended) The sputtering source of claim 3- 1 further comprising a gas flow
`controller $m§ag that controls a flow of feed gas to the strongly-
`
`ionjgeg plasma, the additional feed gas allowing additional pgwer to be absorbed by the
`
`
`
`:.:.:AE.l_I!.\=J;_L-£1
`
`: ‘-
`
`.
`— ~
`-
`. .
` IuLI.‘1
`
`
`
`
`
`
`2"" '35:-oi:
`
`
`
`:
`
`
`
`
`S 7":: 2'.
`
`
`n
`5
` thmby generating additional thermal
`
`energy in the sputtering target.
`
`PAGE N26‘ RCVD AT fil14l20fl4 1B:5fi:ll5 PM [Eastem Daylight Tlme]" SVRIUSPTO-EFXRF-ill‘ DNlS:Bl293fl6 " CSlD:i81 271 1527 * DURATION (mm-ss):ll8-12
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`TSMC-1207 I Page 2 of 21
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`TSMC-1207 / Page 2 of 21
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`

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`08/14/2004 MON 22:40 FAX 781 271 1527 KURT RAUSCHENBACH
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`U05/026
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 2 of 20
`
`Amendments to the Claims:
`
`Please amend claims 1, 6. 7. 20, 34, and 40 and add claims 41-48 as follows.
`
`1.
`
`(currently amended) A magnetically enhanced sputtering source comprising:
`
`a)
`
`b)
`
`an anode;
`
`a cathode assembly that is positioned adjacent to the anode and—foi=ming—a-gap
`
`therelae-tween, the cathode assembly including a sputtering target;
`
`c)
`
`an ionization source that generates a weakly—ionizcd plasma proximate to the
`
`anode and the cathode assembly;
`
`cl)
`
`a magnet that is positioned to generate a magnetic field proximate to the weakly-
`
`ionized plasma, the magnetic field substantially trapping electrons in the weakly-
`
`ionizecl plasma proximate to the sputtering target; and
`
`e)
`
`a power supply g_ep;r_ap,p'g a voltage pulse that produces an electric field between
`
`the cathode assembly and the anode,%m an amplitude
`
`ago, a rise time of the voltage pulse being chosen to increase an excitation rate of
`
`und state at m
`
`at a
`
`e t '
`
`c wcalcl —ioni7.ed
`
`lasma to create a multi-
`
`step ioni-/.ali on process that generates a so-on gly—ionized plasma fiom the weakly-
`
`jpnjzfl plggppa, the multi-stc_:p- ionization process comprising exciting the ground
`
`state atoms to generate garter-at-is-‘lg excited atoms and then
`
`W ionizing the excited atoms within the weakly-ionized plasma
`
`5ur—fae-6-ef—t-he sputter target material from the sputtering target,-to-gesserate
`
`creatp ions that ire.-p&et—a
`
`sp-u-t-t6:=i-H—g—F|-ax-:
`
`2.
`
`(original) The sputtering source of claim 1 wherein the power supply generates a
`
`constant power.
`
`PAGE 8l2G * RCVD AT 5l14:'20ll4 10:55:05 PM [Eastern Daylight Time]* SVRIUSPTO-EFXRF-ill“ DNlS:8T293ll5* CSIWB1 271 152? ‘ DURATION (mm-ss):08-12
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`TSMC-1207 I Page 3 of 21
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`TSMC-1207 / Page 3 of 21
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`

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`06/14/2004 MON 22:41 FAX 78.1 271 1527 KURT RALTSCHENBACH
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`@009/028
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No; 10/065,277
`‘Page 3 of20
`
`3.
`
`4.
`
`5.
`
`6.
`
`(original) The sputtering so uree of claim 1 wherein the power supply generates a
`
`'
`
`constant voltage.
`
`(original) The spttttering source of claim 1 wherein the electric field comprises a quasi-
`
`static electric field.
`
`(original) The sputtering source of claim 1 wherein the electric field comprises a pulsed
`
`electric field.
`
`(currently amended) The sputtering source of‘ claim 1 wherein a __t.l_ig rise time of the
`
`voltage pulse elect-rieéield is chosen to increase the ionization rate of the excited atoms in
`
`the weal<ly—ionized plasma.
`
`7.
`
`(currently amended) The sputtering source of claim 1 wherein the weakly-ionized
`
`pL@1_2, -gas reduces the probability of developing an eleetr-i cal breakdown condition
`
`between the anode and the cathode assembly.
`
`8.
`
`(original) The sputtering source of claim 1 wherein the ions in the strongly-ionized
`
`plasma impact the surface of the sputtering target in at manner that causes substantially
`
`uniform erosion of the sputtering target.
`
`9.
`
`(original) The sputtering source of claim 1 wherein the strongly-ionized plasma is
`
`substantially uniform proximate to the sputtering target.
`
`10.
`
`(original) The sputtering source of claim 1 further comprising a substrate support that is
`
`positioned in a path of the sputtering flux.
`
`ll.
`
`(original) The sputtering source of claim 10 Further comprising a temperature controller
`
`that controls the temperature of the substrate support.
`
`12.
`
`(original) The sputtering source of claim 10 further comprising a bias voltage power
`
`supply that applies a bias voltage to a substrate that is positioned on the substrate support.
`
`PRGE 9l26 ' RCVD AT fil14l20ll4 10:56:05 PHI [Eastern Dayl|ghtTIme]* S'fil:USPTO~EFXRF-llfl " DN|S:li?293ll5* CS|D:781 271 1527* DURllT|0N (mmss):tI3-12
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`TSMC-1207 I Page 4 of 21
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`TSMC-1207 / Page 4 of 21
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`

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`06/14/2004 MON 22:41 FAX 781 271 1527 KURT RAUSCHENBACH
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`010/026
`
`Amendment and Response
`Applicant: Chistyalrov
`Serial No.: 101065177
`Page 4 of20
`
`13.
`
`(original) The sputtering source of claim 1 wherein a volume between the anode and the
`
`cathode assembly is chosen to increase the ionization rate of the excited atoms in the
`
`weakly-ionized plasma.
`
`14.
`
`(original) The sputtering source of claim 1 wherein the ionization source comprises an
`
`electrode.
`
`15.
`
`(original) The sputtering source of claim 1 wherein the ionization source comprises a DC
`
`power supply that generates an electric field proximate to the anode and the cathode
`
`assembly.
`
`16.
`
`(original) The sputtering source of claim 1 wherein the ionization source comprises an
`
`AC power supply that generates an electric field proximate to the anode and the cathode
`
`assembly.
`
`17.
`
`(original) The sputtering source of‘ claim 1 wherein the ionization source is chosen from
`
`the group comprising a UV source, an X-ray source, an electron beam source, and an ion
`beam source.
`
`18.
`
`(original) The sputtering source of claim 1 wherein the magnet comprises an electro-
`
`magnet.
`
`l9.
`
`(original) The sputtering source of claim 1 wherein the sputtering target is fanned of a
`material chosen fi'on1 the group comprising a metallic material, a polymer material. a
`
`superconductive material, a magnetic material, a non-mag-netic material, a conductive
`
`material. a non—co-nductive n1 aterial, a composite material, a reactive material, and a
`
`refractory material.
`
`20.
`
`(currently amended) A method of generating sputtering flux, the method eompri sing:
`
`a)
`
`ionizing a Feed gas to generate a weakly-ionized plasma proximate to a sputtering
`
`target;
`
`PAGE 1lla'26 ‘ RCVD AT 5l14l20ll-I 10:55:05 PM [Easlem Day1ightTime1* SVRIUSPTO-EFXRF-llfl‘ DN|S:3T293(lli " CS|D:?81 271 152? " DURATION (mm-ss):03-12
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`TSMC-1207 I Page 5 of 21
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`TSMC-1207 / Page 5 of 21
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`

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`06/14/2004 MON 22:41 FAX 781 271 1527 KURT RAUSCHENBACH
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`@011/026
`
`Amendment and Response
`Applicant: Chistyakov
`Serial ND.: 10/065,277
`Page 5 of 20
`
`b)
`
`generating a magnetic field proximate to the weakly-ionized plasma, the magnetic
`
`field substantially trapping electrons in the weakly-ionized plasma proximate to
`
`the sputtering target; and
`
`c)
`
`applying ape-electric-fie-id 3 xoltage pulse to the wealcly;ionized plump
`
`amplitude and a rise time of the voltage pulse being chosen tg incmase an
`
`gxgjtatjgn rate of grgund state atoms that are present in the weakly-ionized plasma
`
`1 e ' e a
`
`t’-s
`
`ionization rocess that eneratcs a soon I —ionized lasma
`
`fi'om the weakly-ionized plasma. the multi-step ionizcaljgn process comprising
`
`exciting the ggund stare atoms to generate excited that-excites atoms and then
`
`
`
`electrons-ionizing the excited atoms within the weak] 3:-io;_n'geg plasma to —t-hereby
`
`
`
` '' ' '
`
`
`
`create ions that '
`
`sputter target material from the sputtering target;
`
`21.
`
`(original) The method of claim 20 wherein the applying the electric ficld comprises a
`
`applying a quasi-static electric field.
`
`22.
`
`(original) The method of‘ claim 20 wherein the applying the electric field comprises
`
`applying a substantially uniform electric field.
`
`23.
`
`(original) The method of claim 20 wherein the applying the electric field comprises
`
`applying an electrical pulse across the wealcly—ionized plasma.
`
`24.
`
`(original) The method of claim 23 further comprising selecting at least one of a pulse
`
`amplitude and a pulse width of the electrical pulse that increases an ionization rate of the
`
`strongly-ionized plasma.
`
`25.
`
`(original) The method of claim 23 further comprising selecting at least one of a pulse
`
`amplitude and a pulse width of the electrical pulse that reduces a probability of
`
`developing an electrical breakdown condition proximate to the sputtering target.
`
`PAGE 11l2li ‘ RCVD AT 6i'14i2004 10:56:95 PM [Eastern Daylight Time] * SVR:USPTO-EFXRF-1l0‘ D|'l|S:8T293Dfi " CS|D:?81 271 152? ‘ DURATION (mm-ss]:03-12
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`TSMC-1207 I Page 6 of 21
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`TSMC-1207 / Page 6 of 21
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`

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`V 06/14/2004 MON 22:41 FAX 781 271 1527 KURT RAUSCHENBACH
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`D12/023
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 6 of 20
`
`26.
`
`7
`
`(original) The method ofclaim 23 further comprising selecting at least one of a pulse
`amplitude and a pulse width of the electrical pulse that causes the strongly-ionized
`
`plasma to be substantially uniform in an area adjacent to a surface of the sputtering target.
`
`27.
`
`(original) The method of claim 23 wherein the electrical pulse comprises a pulse having
`a current density that is greater than lAlern2.
`
`28.
`
`(original) The method of claim 23 wherein the electrical pulse comprises a pulse having
`
`a pulse width that is greater than 1.0 microseconds.
`
`29.
`
`30.
`
`(original) The method of claim 23 wherein the electrical pulse comprises a pulse train
`having a repetition rate that is substantially between 0.11-Iz and 1k_Hz_
`
`(original) The method of claim 20 wherein the ions in the strongly-ionized plasma
`impact the surface of the sputtering target in a substantially uniform manner.
`
`31.
`
`(original) The method of claim 20 wherein the strongly-ionized plasma is substantially
`
`uniform proximate to the sputtering target.
`
`32.
`
`33.
`
`34.
`
`(original) The method of claim 20 wherein the peak plasma density of‘ the weakly-
`ionizcd plasma is less than about 10” em".
`
`(original) The method of claim 20 wherein the peak plasma density of the strongly-
`ionizcd plasma is greater than about 10” em".
`
`(currently amended) The method of claim 20 further comprising forming a film fieom-the
`sputteria-g—t-‘rues on a surf‘ace of a substrate from the material fluttered from the fluttering
`
`target.
`
`35.
`
`(original) The method of claim 34 further comprising controlling a temperature ofthe
`
`film.
`
`36.
`
`(original) The method of claim 34 Ihrther comprising applying a bias voltage to the film.
`
`PAGE 1326‘ RCVD AT 5i1iilil0410:56:05 PM [Eastern Daylight Tlme|' SVR:USPTO-EFXRF-110* DH|S:8?l9306 * CS|D:?31 271 152?‘ DURATION (mm-sslznll-12
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`TSMC-1207 I Page 7 of 21
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`TSMC-1207 / Page 7 of 21
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`

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`08/14/2004 MON 22:42 FAX 781 271 1527 KURT RAUSCHENBACH
`
`Q1013/026
`
`Amendment and Response
`Applicant: Cliistyalcov
`Serial No.: 10f06S,277
`Page 7 of 20
`37.
`(original) The method of claim 20 wherein the ionizing the feed gas comprises exposing
`the feed gas to an electric field.
`
`38.
`
`39.
`
`(original) '1‘he method of claim 20 wherein the ionizing the feed gas comprises exposing
`the feed gas to an electrode that is adapted to emit electrons.
`
`(original) The method of claim 20 wherein the ionizing the feed gas comprises exposing
`the feed gas to at least one of a UV source, an X-ray source, an electron beam source, and
`
`an ion beam source.
`
`40.
`
`(currently amended) A magnetically enhanced sputtering source comprising:
`
`a)
`
`b)
`
`c)
`
`means for ionizing a feed gas to generate a wcak1y—ionized plasma proximate to a
`
`sputtering target;
`
`means for generating a magnetic field proximate to the weakly-ionized plasma,
`the magnetic field substantially trapping electrons in the weakly-ionized plasma
`
`proximate to the sputtering target; and
`
`means for applying an-eieetr-ie-field g_v4;1_tag_e_p;1ls_e to the weakly-ionized plasma,
`an amplitude and a rise time of the voltage pulse being chgsen to increase an
`excitation rate of ground state atoms that are present in the weakl):-ionized plasma
`to create 3 nggglfi-step ionization process that generates a strongly-ionized plasma
`from the weakly-ionized plasma, the rnulti-step ionization p_rgce§s ggn1p_1,1'sjI_1g
`
`exciting the ggound state atoms to generate excited that-ea-seizes atoms and then
`v.7-
`-.
`.- .
`.—--. ...
`-.
`-_...._
`v--- -|_n_ ,
`—-"-
` ‘n--:''
`eleet-rens—ionizing the excited atoms within the weakly-ionized plasma to thereby
`create ions that
`sputter target material fi-gm the sputtering target;
`
`41.
`
`(new) The sputtering source of claim 1 wherein the cathode assembly and the anode are
`positioned so as to form a gap therebetween.
`
`PAGE 13l25‘ RCVDAT 5l14f2fl04 10:56:05PM [Eastern DayllghtTlmel’ SVR:USPl'0-EFXRF-110’ DlllS:8?293ll6" CSIDITS1 271 152? ' DURATION(mm-ss):03-12
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`TSMC-1207 I Page 8 of 21
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`TSMC-1207 / Page 8 of 21
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`

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`08/14/2004 MUN 22:42 FAX 781 271 1527 KURT RAUSCHENBACH
`
`@014/028
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: lO!065,277
`Page 8 of 20
`
`42.
`
`(new) T11e sputtering source of claim I wherein the weakly-ionized plasma is generated
`
`from a feed gas that comprises the ground state atoms.
`
`43.
`
`(new) The sputtering source of claim 1 wherein the excited atoms within the weakly-
`
`ionized plasma are ionized by electrons to create the ions that sputter material from the
`
`sputtering target.
`
`44.
`
`(new) The Sputtering source of claim 1 wherein the rise time of the voltage pulse is
`
`approximately between 0.01 and 100V/p.sec.
`
`45.
`
`(new) The sputtering source of claim 1 wherein the amplitude of the voltage pulse is
`
`approximately between IUUV and 30kV.
`
`46.
`
`(new) The method of claim 20 wherein the weaklydonized plasma is generated from a
`
`feed gas that comprises the ground state atoms.
`
`47.
`
`(new) The method of claim 20 wherein a duration of the weakly-ionized plasma is
`
`approximately between one microsecond and one hundred seconds.
`
`48.
`
`(new) The method of claim 20 wherein the ionizing the excited atoms within the weakly-
`
`ionized plasma to create ions that sputter material fi'orn.t.hc.sputtering target comprises
`
`ionizing the excited atoms with electrons.
`
`49.
`
`(new) The method or claim 20 wherein the rise time of the voltage pulse is
`
`approximately between 0.01 and 100V/uses.
`
`50.
`
`(new) The method of claim 20 wherein the amplitude of the voltage pulse is
`
`approximately between 100V and 30lcV.
`
`PAGE 14126‘ RCVD AT BIMIZUD4 10:55:05 PM [Eastern Daylight Time]' SVR:USPTO-EFllRF-1lD* DNlS:8?293Dfi ‘ CSIDITB1 271 152? ‘ DURATION (mm-ss):03-12
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`TSMC-1207 I Page 9 of 21
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`TSMC-1207 / Page 9 of 21
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`DB/1:!/2004 MON 22:42 FAX 781 271 1527 KURT RAUSCHENBACH
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`@015/026
`
`Arnendmcnt and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 9 of 20
`
`Bending Claims:
`
`RENINRKS
`
`Claims 1-50 are currently pending in the present application. Claims 1, 6, 7, 20, 34,
`
`and 40 are amended by the present Arnendmeltt. Claims 41-50 are added by the present
`
`Amendment. No new matter is added by these amendments. Upon entry of the present
`
`Amendment. reconsideration of claims 1-40 and consideration of new claims 41-50 is
`
`respectfully requested.
`
`gejections under 35 U.S.C. §1D2gb) As Being Anticipated by Kouznetsov:
`
`Claims 1, 5-10. 13, 14. 16, 19, 20, 22-31, 34, 37, 38, and 40 are rejected under 35 U.S.C.
`
`§l02(b) as being anticipated by Kouznctsov (W098/40532) (hereinafter “Kouznetsov").
`
`Independent claims 1, 7, 20 and 40 are herein amended to more clearly recite the invention. No
`
`new matter is added by these amendments.
`
`To anticipate a claim under 35 U.S.C. §102, a single reference must teach every aspect of
`
`the claimed invention either explicitly or irnpliedly. Any feature not directly taught by the
`
`reference must be inherently present in the reference. Thus, a claim is anticipated by a reference
`
`only if each and every element of the claim is described, either expressly or inherently, in a
`
`single prior art reference.
`
`Independent Claim 1 and Dependent Claims 5-10, 13, 14, 16, and 12
`
`The Applicant respectfully submits that Kouznctsov does not describe each and every
`
`element of independent claim 1 as currently amended. Independent claim 1 has been amended to
`
`recite a magnetically enhanced sputtering source having a power supply that generates a voltage
`
`pulse that produces an electric field between an anode and a cathode assembly. An amplitude
`
`and a rise time of the voltage pulse is chosen to increase the excitation rate of ground state atoms
`
`that are present in the weakly-ionized plasma to create a multi—step ionization process. The
`
`multi-step ionization process includes cxciting the ground state atoms to generate excited atoms,
`
`and then ionizing the excited atoms in the weakly—ionized plasma. This arnendment is supported
`
`by the originally-filed specification of the present application. See, for example, paragraphs 59-
`
`PAGE 15!2fi ‘ RCVD AT 5i14i2llll4 13:55:05 PM [Eastern Daylight Timel‘ SVR:USPTO-EFXRF-1i0' DNlS:8?19iD6* CS|D:?31 271 1527 * DURATION (mm-ss]:08-12
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`TSMC-1207 I Page 10 of 21
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`TSMC-1207 / Page 10 of 21
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`

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`08/14/2004 MON 22:43 FAX 781 271 1527 KURT RAUSCHENBACH
`
`018/D23
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No; 10/065,277
`Page 10 of 20
`
`69 ofthe originally-filed specification. The Applicant submits that no new matter is added by
`
`the arnendrnents to independent claim 1.
`
`The Applicant believes that there is no description in Kouznetsov of a power supply that
`generates a voltage pulse having an amplitude and a rise time that are chosen to increase an
`excitation rate of ground state atoms that are present in a weakly-ionized plasma to generate a
`multi-step ionization process.
`instead, the Applicant believes that the pulsed power source
`described in Kouznetsov generates a gas having a fully ionized state using a single-step
`- ionization process. According to Kouznetsov, the pulsed power source used in his apparatus
`provides “pulses in such a way, i.e. that so much power is developed in each pulse. that in the
`application of such a pulse, For a very short time during the start ofthe pulse, the state ofthe gas
`located at the region in which the electrons are trapped by the magnetic field will very rapidly
`reach a fully ionized state..." See, for example. Kouznetsov page 5, lines 1-4. The application
`of a very large voltage pulse (2,000 Volts) having a Fast rise time appears to fully ionize the gas
`by direct ionization from electrons located in the region having crossed electric and magnetic
`fields. See, for example, Kouznetsov page 12, lines 22-26.
`
`The Applicant respectfully submits that there is no description in Kouznelsov of‘ a power
`supply that generates a voltage pulse which creates a multi-step ionization process that includes
`generating excited atoms from ground state atoms that are present in the weakly ionized plasma,
`and then ionizing the excited atoms in the weakly-ionized plasma as claimed in amended claim
`1. Instead, the Applicant believes that the ionization process described in Kouznetsov is a
`single-step ionization process known as direct ionization by electron impact.
`
`ln view of the above remarks, the Applicant respectfully submits that Kouznetsov does
`not describe each and every element of independent claim 1 as currently amended, either
`expressly or inherently. Therefore, the Applicant submits that Kouznetsov does not anticipate
`independent claim 1 as currently amended under 35 U.S.C. §102.(b). Thus, the Applicant
`submits that independent claim 1 as currently amended is allowable. The Applicant also submits
`that dependent claims 5-10, 13. 14, 16, and 19 are allowable as depending from an allowable
`
`base claim.
`
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`

`
`as/14/2004 Mon 22:43 FAX 731 271 1527 KURT RALTSCHENBACH
`
`Amendment and Response
`Applicant: Chistyakov
`Serial No.: l0l065,2'I7
`Page 1 1 of 20
`Independent Qlairn 2Q 3.11:1 Dgpgmggt Claims 22-31, 34, 37, and 38
`
`017/023
`
`eclfully submits that Kouznctsov does not describe each and every
`The Applicant rcsp
`lai.m 20 is herein amended
`claim 20 as currently amended. Independent c
`clement of independent
`ionized plasma. An amplitude and a
`to recite the step of applying a voltage pulse to the weakly-
`ltage pulse are chosen to increase an excitation rate of ground state atoms in
`rise time of the vo
`step ionization process. The multi-step ionization
`the weakly-ionized plasma to create a multi-
`ionized plasma, and then
`process generates excited atoms from ground state atoms in the weakly-
`s the excited atoms in the weakly-ionized plasma. This amendment is supported by the
`ionize
`led specification ofthe present application. See. for example, paragraph 59-69 ofthe
`originally-fi
`the amendments to independent claim
`'
`'
`filed specification. No new matter is added by
`
`The Applicant believes that there is no description in Kouznetsov ofa method of
`step ionization process as claimed in
`generating a strongly-ionized plasma using a multi-
`the Applicant believes that Kouznetsov
`amended claim 20. Instead, as previously discussed,
`ess whereby the application of a very large voltage pulse.
`describes a single-step ionization proc
`-26). The ‘
`having a fast rise time creates a gas having a fully ionized state (See page 12, lines 22
`Applicant believes that the large voltage pulse described in Kouznetsov ionizes the gas by direct
`ionization from electrons located in the region of crossed electric and magnetic fields.
`
`In view ofthe above remarks, the Applicant respectfully submits that Kouznetsov
`and every element ofindependent claim 20 as currently amended,
`does not describe each
`the Applicant submits that Kouzuetsov does not
`either expressly or inherently. Therefore,
`its that
`anticipate independent claim 20 as currently amended. Thus, the Applicant subrn
`amended independent claim 20 and dependent claims 22—3 1, 34, 37, and 38
`under 35 U.S.C. §l02(b).
`
`are allowable
`
`Reiecgigpg under 35 U.S.C. §102§b) as Being Anticipated by Mozgrin:
`Claims 1, 4, 5, 7, 13, 14, 16, 19-25, 27-29, 32, 33, 37, and 40 are rejected under 35
`“High Current Low—Pressure
`U.S.C. §l02(b) as being anticipated by Mozgrin et a1. entitled
`Quasi-Stationary Discharge in 9. Magnetic Field: Experimental Resear
`
`ch", Plasma Physics
`
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`TSMC-1207 I Page 12 of 21
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`TSMC-1207 / Page 12 of 21
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`

`
`DB/14/2004 MON 22:43 FAX 781 271 1527 KURT RAUSCHENBACH
`
`018/028
`
`Amendment and Response
`Applicant: Chistyakov
`SerialNo.: 101061277
`Page 12 of 20
`
`Reports, Vol. 21, No. 5, 1995, pp. 400-409 (hereinafter “Mozgrin"). Independent claims 1, 20
`and 40 are herein amended to more clearly recite the invention. No new matter is added by these
`
`amendments.
`
`To anticipate a claim under 35 U.S.C. §l02, a single reference must teach every aspect of
`the claimed invention either explicitly or irnpiiedly. Any feature not directly taught by the
`reference must be inherently present in the reference. Thus. a claim is anticipated by a reference
`only if each and every element of the claim is described, either expressly or inherently, in a
`
`single prior art reference.
`
`Lndgpendent Claim 1 and Dependent Claims 4, 5, 7, 13, 14, 16, and 19
`
`The Applicant respectfully submits that Mozgrin does not describe each and every
`element oi‘ independent claim 1 as currently amended. Independent claim 1 has been amended to
`rccite a power supply generating a voltage pulse that produces an electric field between a
`cathode assembly and an anode. The voltage pulse has an amplitude and a rise time that are
`chosen to increase a rate of excitation ofg-round state atoms present in the weakly-ionized
`plasma to create a multi—step ionization process. The rnulti-step ionization process generates a‘
`strongly-ionized plasma from the weakly-ionized plasma by first exciting ground state atoms to
`generate excited atoms, and then by ionizing the excited atoms in the weakly-ionized plasma-
`This amendment is supported by the originally-filed specification of‘ the present application.
`See, for example, paragraphs 59-69 ofthe originally-filed specification. The Applicant submits
`that no new matter is added by the amendments to independent claim 1.
`
`‘
`
`The Applicant believes that there is no description in Mozgrin of a power supply that
`generates a voltage pulse having an amplitude and a rise time that are chosen to increase the
`excitation rate of‘ ground state atoms present in the weakly-ionized plasma to create a multi-
`step ionization process. Instead, the Applicant believes that Mozgrin describes a pulsed
`discharge supply unit that generates a plasma with a prior art direct ionization process using
`
`very high-power pulses.
`
`The Applicant believes that the quasi-stationary discharge described in Mozgrin is
`fonned with a prior art ionization process known as direct ionization by electron impact and
`
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`

`
`_‘0B/14/.2004 HUN 22:44 FAX 781 2'71 152? KURT RAUSCHENBACH
`
`@019/026
`
`Amendment and Response
`Applicant: Chistyakov
`Seri:1lNo.: 10/065,277
`Page 13 of 20
`
`does not use the multi-step ionization process of the present invention. For example, the
`current and voltage characteristics (CVC) shown in FIG. 4 of Mozgrin indicate to the
`Applicant that the quasi-stationary discharge described in Mozgrin is formed by direct
`ionization. The CVC shown in FIG. 4 ofMozgrin includes four parts.
`
`Part 1 of the CVC shown in PK}. 4 of Mozgrin is a low current (0.2A) discharge
`regime that is a pre—ionization stage of the quasi-stationary discharge. The pre—ionization
`stage is generated using a high-voltage power supply unit that produces a high—voltage, low-
`current discharge between two electrodes to create a pre-ionized plasma. The prc-ionized
`plasma includes ions that are generated by a typical direct ionization process.
`
`Part 2 of the CVC shown in FIG. 4 of Mozgrin is ahigh—eurrent, high-voltage
`discharge regime having a discharge current that is in the range of O.2A-1 SA and a discharge
`voltage that is in the range of 350V-500V. The plasma discharge appears to be a typical
`magnetron plasma discharge that is commonly generated in plasma processing systems. The
`plasma discharge is formed by using a square voltage pulse. There is no description in
`Mozgrin related to Part 2 of the CVC of choosing an amplitude and a rise time ofthe voltage ,
`pulse in order to increase a rate ofexcitation of ground state atoms to create excited atoms in
`amulti-step ionization process as claimed in amended independent claim 1. In fact, there is
`no description in Mozgrin of choosing an amplitude and a rise time of a voltage pulse to
`change the plasma discharge conditions. Mozgrin describes varying the plasma discharge
`conditions by changing the pressure and magnetic field strength, but does not mention
`varying the plasma discharge conditions by changing the amplitude and the rise time ofthe
`voltage pulse. See Mozgfin page 403 lines 8-13.
`
`_
`
`Part 3 ofthe CVC shown in FIG. 4 of‘ Mozgrin is a high-current discharge regime in
`which the discharge voltage remains stationary at 90V over a current that is in the range of
`ISA-1,000A. Pan 3 ofthe CVC corresponds to a prior art magnetron discharge for high-
`pressure (10" torr) plasma processing. The voltage drops sharply in this regime until the
`current reaches a quasi-stationary value that maintains the discharge power at a constant
`value. There is no description related to Part 3 of the CVC of choosing an amplitude and a
`
`PAGE 1906 * RCVD AT |il14l2flfl4 10:56:05 PM [EaslernDay1lghtTime]* SVR:USPTO£FXRF-iii‘ DN1S:3?i93fl6* CS|D:i31 271 1527 ‘ DURATION(mm-ss):D3-12
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`TSMC-1207 I Page 14 of 21
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`TSMC-1207 / Page 14 of 21
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`

`
`' os/14”/2004 MON 22:44 FAX 781 271 1527 KURT RAUSCHENBACH
`
`020/023
`
`Amendment and Response
`Applicant: Chistyal-COV
`Serial No.: 10/065,277
`Page 14 of 20
`
`rise time of a voltage pulse to increase a rate of excitation of ground state atoms to create
`
`excited atoms in a multi-step ionization process as claimed in amended independent claim 1.
`
`Part 4 of the CVC shown in FIG. 4 oflvlozgrin is a high-current, low-voltage arc
`
`discharge regime having a current that is greater than 1kA and a voltage that is in the range
`
`of lO—3OV. Arc discharges are generally undesirable for most plasma processing
`
`applications. Are discharges are observed in conventional magnetrons when too much power
`
`applied to the plasma. There is no description related to Part 4 of the CVC of choosing an
`
`amplitude and a rise time of avoltagc pulse to increase a rate of excitation of ground state
`
`atoms to create excited atoms in a multi-step ionization process as claimed in amended
`
`independent claim 1.
`
`Thus, the Applicant submits that there is no tcaching or suggestion of increasing an
`
`excitation rate of ground state atoms in a weakly-ionized plasma to generate a multi—step
`
`ionization process in either Part 1, Part 2, Part 3, or Part 4 of the CVC ol'Mor.grin. In view
`
`of the above remarks, the Applicant respectfully submits that Mozg-rin does not describe each
`
`and every element of independent claim 1 as currently amended, either expressly or
`
`inherently. Therefore, the Applicant submits that Mozgrin does not anticipate independent
`
`claim I as currently amended. Thus, the Applicant submits that amended independent claim
`
`1 and dependent claims 4, 5, 7, I3, 14, 16, and 19 are allowable under 35 U.S.C. §lO2(b).
`
`Tnde endent Claim 20 andD endent
`
`laim 2 -
`
`- 9
`
`2 33 and 37
`
`The Applicant believes that Mozgtin does not describe each and every element of
`
`independent claim 20 as currently amended. Independent claim 20 is herein amended to recite
`
`the step of applying a voltage pulse to the weakly-ionized plasma where an amplitude and a rise
`
`time of the voltage pulse are chosen to increase an excitation rate of ground state atoms in the
`
`weakly—ionized plasma to create a multi-step ionization process. The multi-step ionization
`
`process includes exciting the ground state atoms to generate excited atoms, and then ionizing the
`
`excited atoms within the weakly