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`‘759 Patent, Claims 20, 21, 34-36, 38, 39, 47, and 49
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`DOCKET NO: 0107131.00272US3
`’759 PATENT
`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
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`PATENT: 7,147,759, CLAIMS 20, 21, 34-36, 38, 39, 47, and 49
`
`INVENTOR: ROMAN CHISTYAKOV
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`
`
`FILED: SEP. 30, 2002
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` ISSUED: DEC. 12, 2006
`
`TITLE: HIGH-POWER PULSED MAGNETRON SPUTTERING
`
`Mail Stop PATENT BOARD
`Patent Trial and Appeal Board
`U.S. Patent & Trademark Office
`P.O. Box 1450
`Alexandria, VA 22313-1450
`
`DECLARATION OF UWE KORTSHAGEN, PH.D., REGARDING
`CLAIMS 20, 21, 34-36, 38, 39, 47, and 49 OF U.S. PATENT NO. 7,147,759
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`I, Uwe Kortshagen, declare as follows:
`
`1. My name is Uwe Kortshagen.
`
`2.
`
`I received my Diploma in Physics from the University of Bochum in
`
`Germany in 1988. I received my Ph.D. in Physics from University of Bochum in
`
`1991 and my Habilitation in Experimental Physics from University of Bochum in
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`1995.
`
`3.
`
`I am a Distinguished McKnight University Professor at the University
`
`of Minnesota. I have been the Head of the Mechanical Engineering Department at
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`the University of Minnesota since July 2008. I have been a Professor at the
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`Mechanical Engineering Department at the University of Minnesota since August
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`2003. Between August 1999 and August 2003, I was an Associate Professor at the
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`Mechanical Engineering Department at the University of Minnesota. Between July
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`1996 and August 1999, I was an Assistant Professor at the Mechanical Engineering
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`Department at the University of Minnesota. Between April 1996 and July 1996, I
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`was a Lecturer at the Department of Physics and Astronomy at the University of
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`Bochum, Germany. Between August 2006 and June 2008, I was the Director of
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`Graduate Studies at the Mechanical Engineering Department at the University of
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`Minnesota.
`
`4.
`
`I have taught courses on Introduction to Plasma Technology and
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`Advanced Plasma Technology. These courses include significant amounts of
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`material on plasma technology. In addition, I have taught a Special Topics class
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`on Plasma Nanotechnology.
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`5.
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`Plasma processes for advanced technological applications has been
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`the primary area of my professional research for over 30 years. Most of my Ph.D.
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`students go on to work on plasmas either in academia or the semiconductor
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`industry.
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`6.
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`7.
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`A copy of my latest curriculum vitae (CV) is attached as Appendix A.
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`I have reviewed the specification, and claims, and file history of U.S.
`
`Patent No. 7,147,759 (the “‘759 patent”) (Ex. 1201). I understand that the ’759
`
`patent was filed on September 30, 2002. I understand that, for purposes
`
`determining whether a publication will qualify as prior art, the earliest date that the
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`’759 patent could be entitled to is September 30, 2002.
`
`8.
`
`I have reviewed the following publications:
`
` D.V. Mozgrin, et al, High-Current Low-Pressure Quasi-Stationary
`
`Discharge in a Magnetic Field: Experimental Research, Plasma
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`Physics Reports, Vol. 21, No. 5, pp. 400-409, 1995 (“Mozgrin”
`
`(Ex. 1203)).
`
` A. A. Kudryavtsev and Skerbov, Ionization relaxation in a plasma
`
`produced by a pulsed inert-gas discharge, Sov. Phys. Tech. Phys.
`
`28(1), pp. 30-35, January 1983 (“Kudryavtsev” (Ex. 1204)).
`
` U.S. Pat. No. 6,413,382 (“Wang” (Ex. 1205)).
`
` D.V. Mozgrin, High-Current Low-Pressure Quasi-Stationary
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`Discharge in a Magnetic Field: Experimental Research, Thesis at
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`Moscow Engineering Physics Institute, 1994 (“Mozgrin Thesis”
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`3
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`(Ex. 1217)). The certified English translation, original Mozgrin
`
`Thesis, and affidavit as to its public availability are attached hereto
`
`as Exhibits 1217-19, respectively.
`
` Li et al, Low-temperature magnetron sputter-deposition, hardness,
`
`and electrical resistivity of amorphous and crystalline alumina thin
`
`films, J. Vac. Sci. Technol. A 18(5), pp. 2333-2338, 2000 (“Li”
`
`(Ex. 1220)).
`
` U.S. Pat. No. 5,247,531 (“Muller-Horsche” (Ex. 1221)).
`
` U.S. Pat. No. 5,968,327 (“Kobayashi” (Ex. 1222)).
`
`9.
`
`I have read and understood each of the above publications. The
`
`disclosure of each of these publications provides sufficient information for
`
`someone to make and use the plasma generation and sputtering processes that are
`
`described in the above publications.
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`10.
`
`I have considered certain issues from the perspective of a person of
`
`ordinary skill in the art at the time the ‘759 patent application was filed. In my
`
`opinion, a person of ordinary skill in the art for the ‘759 patent would have found
`
`the ‘759 invalid.
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`11.
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`I have been retained by Intel Corporation (“Intel” or “Petitioner”) as
`
`an expert in the field of plasma technology. I am being compensated at my normal
`
`consulting rate of $350/hour for my time. My compensation is not dependent on
`
`and in no way affects the substance of my statements in this Declaration.
`
`12.
`
`I have no financial interest in the Petitioner. I similarly have no
`
`financial interest in the ’759 patent, and have had no contact with the named
`
`inventor of the ’759 patent.
`
`I.
`
`RELEVANT LAW
`13.
`
`I am not an attorney. For the purposes of this declaration, I have been
`
`informed about certain aspects of the law that are relevant to my opinions. My
`
`understanding of the law is as follows:
`
`A. Claim Construction
`14.
`I have been informed that claim construction is a matter of law and
`
`that the final claim construction will ultimately be determined by the Board. For
`
`the purposes of my invalidity analysis in this proceeding and with respect to the
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`prior art, I have applied the broadest reasonable construction of the claim terms as
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`they would be understood by one skilled in the relevant art.
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`15.
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`I have been informed and understand that a claim in inter partes
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`review is given the “broadest reasonable construction in light of the specification.”
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`37 C.F.R. § 42.100(b). I have also been informed and understand that any claim
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`term that lacks a definition in the specification is therefore also given a broad
`
`interpretation.
`
`B. Obviousness
`16.
`I have been informed and understand that a patent claim can be
`
`considered to have been obvious to a person of ordinary skill in the art at the time
`
`the application was filed. This means that, even if all of the requirements of a
`
`claim are not found in a single prior art reference, the claim is not patentable if the
`
`differences between the subject matter in the prior art and the subject matter in the
`
`claim would have been obvious to a person of ordinary skill in the art at the time
`
`the application was filed.
`
`17.
`
`I have been informed and understand that a determination of whether
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`a claim would have been obvious should be based upon several factors, including,
`
`among others:
`
` the level of ordinary skill in the art at the time the application was
`
`filed;
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` the scope and content of the prior art;
`
` what differences, if any, existed between the claimed invention and
`
`the prior art.
`
`18.
`
`I have been informed and understand that the teachings of two or
`
`more references may be combined in the same way as disclosed in the claims, if
`
`such a combination would have been obvious to one having ordinary skill in the
`
`art. In determining whether a combination based on either a single reference or
`
`multiple references would have been obvious, it is appropriate to consider, among
`
`other factors:
`
` whether the teachings of the prior art references disclose known
`
`concepts combined in familiar ways, and when combined, would
`
`yield predictable results;
`
` whether a person of ordinary skill in the art could implement a
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`predictable variation, and would see the benefit of doing so;
`
` whether the claimed elements represent one of a limited number of
`
`known design choices, and would have a reasonable expectation of
`
`success by those skilled in the art;
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`
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` whether a person of ordinary skill would have recognized a reason
`
`to combine known elements in the manner described in the claim;
`
` whether there is some teaching or suggestion in the prior art to
`
`make the modification or combination of elements claimed in the
`
`patent; and
`
` whether the innovation applies a known technique that had been
`
`used to improve a similar device or method in a similar way.
`
`19.
`
`I understand that one of ordinary skill in the art has ordinary
`
`creativity, and is not an automaton.
`
`20.
`
`I understand that in considering obviousness, it is important not to
`
`determine obviousness using the benefit of hindsight derived from the patent being
`
`considered.
`
`II. BRIEF DESCRIPTION OF TECHNOLOGY
`A.
`Plasma
`21. A plasma is a collection of ions, free electrons, and neutral atoms.
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`The negatively charged free electrons and positively charged ions are present in
`
`roughly equal numbers such that the plasma as a whole has no overall electrical
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`charge. The “density” of a plasma refers to the number of ions or electrons that are
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`present in a unit volume.1
`
`22.
`
` Plasmas had been used in research and industrial applications for
`
`decades before the ‘759 patent was filed. For example, sputtering is an industrial
`
`process that uses plasma to deposit a thin film of a target material onto a surface
`
`called a substrate (e.g., silicon wafer during a semiconductor manufacturing
`
`operation). Ions in the plasma strike a target surface causing ejection of a small
`
`amount of target material. The ejected target material then forms a film on the
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`substrate.
`
`23. Under certain conditions, electrical arcing can occur during sputtering.
`
`Arcing is undesirable because it causes explosive release of droplets from the
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`target that can splatter on the substrate. The need to avoid arcing while sputtering
`
`was known long before the ‘759 patent was filed.
`
`
` 1
`
` The term “plasma density” and “electron density” are often used interchangeably
`
`because the negatively charged free electrons and positively charged ions are
`
`present in roughly equal numbers in plasmas that do not contain negatively
`
`charged ions or clusters.
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`B.
`Ions and excited atoms
`24. Atoms have equal numbers of protons and electrons. Each electron
`
`has an associated energy state. If all of an atom’s electrons are at their lowest
`
`possible energy state, the atom is said to be in the “ground state.”
`
`25. On the other hand, if one or more of an atom’s electrons is in a state
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`that is higher than its lowest possible state, then the atom is said to be an “excited
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`atom.” Excited atoms are electrically neutral– they have equal numbers of
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`electrons and protons. A collision with a free electron (e-) can convert a ground
`
`state atom to an excited atom. For example, the ‘759 Patent uses the following
`
`equation to describe production of an excited argon atom, Ar*, from a ground state
`
`argon atom, Ar. See ‘759 Patent at 9:40 (Ex. 1201).
`
`Ar + e- Ar* + e-
`
`26. An ion is an atom that has become disassociated from one or more of
`
`its electrons. A collision between a free, high energy, electron and a ground state
`
`or excited atom can create an ion. For example, the ‘759 Patent uses the following
`
`equations to describe production of an argon ion, Ar+, from a ground state argon
`
`atom, Ar, or an excited argon atom, Ar*. See ‘759 Patent at 3:58 and 9:42 (Ex.
`
`1201).
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`Ar + e- Ar+ + 2e-
`Ar* + e- Ar+ + 2e-
`27. The production of excited atoms and ions was well understood long
`
`before the ‘759 patent was filed.
`
`III. OVERVIEW OF THE ‘759 PATENT
`A.
`Summary of Alleged Invention of the ’759 Patent
`28. The ’759 Patent describes a two-stage sputtering technique in which a
`
`so called strongly-ionized plasma is generated from a weakly-ionized plasma in a
`
`manner that avoids arcing.
`
`29. More specifically, the claims of the ’759 Patent are directed to an
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`ionization source that generates a weakly-ionized plasma from a feed gas. A
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`power supply then applies a specific, high-voltage pulse to the weakly-ionized
`
`plasma to generate a strongly-ionized plasma. The voltage pulse induces a “multi-
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`step ionization process” in which ground state atoms transition to an excited state
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`before becoming ionized. The strongly-ionized plasma is generated “without
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`forming an arc discharge.”
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`B.
`
`Prosecution History
`1.
`The Patent Owner mischaracterized the prior art Mozgrin
`reference
`
`30.
`
`I understand that during prosecution, the Patent Owner asserted that
`
`Mozgrin failed to teach the “without forming an arc discharge” limitation.
`
`However, that assertion is incorrect. Mozgrin teaches all limitations of the
`
`challenged claims – including “without forming an arc discharge.” Mozgrin
`
`discusses arcs but does so in the context of providing a recipe for avoiding them.
`
`2.
`Addition of the “without forming an arc” limitation resulted in
`allowance
`
`31.
`
`I understand that before the Patent Owner narrowed the claims to
`
`require “without forming an arc discharge,” it unsuccessfully argued, three
`
`separate times, that other limitations such as “multi-step ionization” made the
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`claims allowable over Mozgrin. 06/14/04 Resp at 12 (Ex. 1207); 02/24/05 Resp at
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`15 (Ex. 1209); and 10/27/05 RCE at 14 (Ex. 1211). I further understand that the
`
`Examiner was not persuaded by those arguments, correctly noted that Mozgrin
`
`teaches multi-step ionization, and consistently rejected the claims over Mozgrin
`
`even after they had been amended to require “multi-step ionization.” 01/11/06
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`Office Action at 12 (“…Mozgrin does teach a power supply that generates a pulse
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`
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`that allows the plasma to go through a multi-step ionization.”) (Ex. 1212). See also
`
`08/30/04 Office Action (Ex. 1208) and 05/27/05 Office Action (Ex. 1210).
`
`32.
`
`I understand that in an amendment dated May 2, 2006, although the
`
`Patent Owner repeated its previously unsuccessful multi-step ionization argument,
`
`the only substantive difference was addition of the limitation “without forming an
`
`arc discharge,” and the argument that Mozgrin did not teach that limitation.
`
`05/02/06 Resp. at 2, 5, 7 and 13-16 (Ex. 1213). I further understand that after that
`
`amendment and argument, the Examiner allowed the challenged claims. 2
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`10/11/2006 Allowance at 2-3 (Ex. 1215).
`
`33. However, as will be explained in detail below, and contrary to the
`
`Patent Owner’s argument, Mozgrin provides a recipe for avoiding arcing.
`
`
`
` 2
`
` After “without forming an arc discharge” was added to the claims, I understand
`
`that the only remaining rejection, double patenting, was addressed by a terminal
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`disclaimer. 08/28/2006 Response at 2-3 (Ex. 1214).
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`‘759 Patent, Claims 20, 21, 34-36, 38, 39, 47, and 49
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`IV. OVERVIEW OF THE PRIMARY PRIOR ART REFERENCES
`A.
`Summary of the prior art
`34. As explained in detail below, limitation-by-limitation, there is nothing
`
`new or non-obvious in the challenged claims of the ‘759 Patent.
`
`B. Overview of Mozgrin3
`35. Mozgrin teaches forming a plasma “without forming an arc
`
`discharge.”
`
`1.
`
`Summary
`
`36. Fig 7. of Mozgrin, copied below, shows the current-voltage
`
`characteristic (“CVC”) of a plasma discharge.
`
`
`
` 3
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` As noted in the prosecution history section, the Patent Office used Mozgrin to
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`reject claims that eventually issued in the’759 Patent.
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`37. As shown, Mozgrin divides this CVC into four distinct regions.
`
`38. Mozgrin calls region 1 “pre-ionization.” Mozgrin at 402, right col, ¶ 2
`
`(“Part 1 in the voltage oscillogram represents the voltage of the stationary
`
`discharge (pre-ionization stage).” (Ex. 1203).
`
`39. Mozgrin calls region 2 “high current magnetron discharge.” Mozgrin
`
`at 409, left col, ¶ 4 (“The implementation of the high-current magnetron discharge
`
`(regime 2)…” (Ex. 1203). Application of a high voltage to the pre-ionized plasma
`
`causes the transition from region 1 to 2. Mozgrin teaches that region 2 is useful for
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`sputtering. Mozgrin at 403, right col, ¶ 4 (“Regime 2 was characterized by an
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`intense cathode sputtering…”) (Ex. 1203).
`
`40. Mozgrin calls region 3 “high current diffuse discharge.” Mozgrin at
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`409, left col, ¶ 5, (“The high-current diffuse discharge (regime 3)…” (Ex. 1203).
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`Increasing the current applied to the “high-current magnetron discharge” (region 2)
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`causes the plasma to transition to region 3. Mozgrin also teaches that region 3 is
`
`useful for etching, i.e., removing material from a surface. Mozgrin at 409, left col,
`
`¶ 5 (“The high-current diffuse discharge (regime 3) is useful … Hence, it can
`
`enhance the efficiency of ionic etching…”) (Ex. 1203).
`
`41. Mozgrin calls region 4 “arc discharge.” Mozgrin at 402, right col, ¶ 3
`
`(“…part 4 corresponds to the high-current low-voltage arc discharge…” (Ex.
`
`1203). Further increasing the applied current causes the plasma to transition from
`
`region 3 to the “arc discharge” region 4.4
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`
`
` 4
`
` As one of ordinary skill would understand, the oscillogram shown in Mozgrin’s
`
`Fig. 3 when taken as a whole corresponds to region 3 on Mozgrin’s Figs. 4 and 7,
`
`i.e., Fig 3 represents currents and voltages used to reach stable operation in region
`
`3. Further, as one of ordinary skill would understand, an oscillogram
`
`corresponding to region 2 on Mozgrin’s Figs. 4 and 7 (i.e., stable operation in
`
`region 2) would have a different shape, e.g., the voltage would not drop as low as
`
`shown in Fig. 3b and the current would be lower than what is shown in Fig. 3a.
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`42. Within its broad disclosure of a range of issues related to sputtering
`
`and etching, Mozgrin describes arcing and how to avoid it.
`
`2. Mozgrin teaches avoiding arcs
`
`43. As shown in Mozgrin’s Fig. 7 (copied above), if voltage is steadily
`
`applied, and current is allowed to grow, the plasma will eventually transition to the
`
`arc discharge (Mozgrin’s region 4). However, if the current is limited, the plasma
`
`will remain in the arc-free regions 2 (sputtering) or 3 (etching).
`
`44. Mozgrin is an academic paper and it explores all regions, including
`
`the arc discharge region, so as to fully characterize the plasma. But Mozgrin’s
`
`discussion of arcing does not mean that arcing is inevitable. Rather, Mozgrin’s
`
`explanation of the conditions under which arcing occurs provides a recipe for
`
`avoiding arcs. Mozgrin explicitly notes that arcs can be avoided. See Mozgrin at
`
`400, left col, ¶ 3 (“Some experiments on magnetron systems of various geometry
`
`showed that discharge regimes which do not transit to arcs can be obtained even at
`
`high currents.”) (Ex. 1203). One of ordinary skill would understand that the arc
`
`discharge region should be avoided during an industrial application, such as
`
`sputtering. For example, Plasma Etching: An Introduction, by Manos and Flamm
`
`(“Manos”), a well-known textbook on plasma processing, which was published in
`
`
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`1989, over a decade before the ‘759 Patent was filed, states that “…arcs… are a
`
`problem…” Manos at 231 (Ex. 1206).
`
`45. One of ordinary skill would further understand that Mozgrin’s arc
`
`region can be avoided by limiting the current as shown in Mozgrin’s Fig. 7. See,
`
`e.g., Mozgrin at 400, right col, ¶ 1 (“A further increase in the discharge currents
`
`caused the discharges to transit to the arc regimes…”); 404, left col, ¶ 4 (“The
`
`parameters of the shaped-electrode discharge transit to regime 3, as well as the
`
`condition of its transit to arc regime 4, could be well determined for every given
`
`set of the discharge parameters.”); and 406, right col, ¶ 3 (“Moreover, pre-
`
`ionization was not necessary; however, in this case, the probability of discharge
`
`transferring to the arc mode increased.”) (Ex. 1203).
`
`46. Mozgrin’s determination of conditions that cause transition to the arc
`
`regime is useful because it teaches one of ordinary skill how to avoid arcs.
`
`C. Overview of Kudryavtsev
`47. Kudryavtsev is a technical paper that studies the ionization of a
`
`plasma with voltage pulses. See, e.g., Kudryavtsev at 30, left col. ¶ 1 (Ex. 1204).
`
`In particular, Kudryavtsev describes how ionization of a plasma can occur via
`
`different processes. The first process is direct ionization, in which ground state
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`atoms are converted directly to ions. See, e.g., Kudryavtsev at Fig. 6 caption (Ex.
`
`1204). The second process is multi-step ionization, which Kudryavtsev calls
`
`stepwise ionization. See, e.g., Kudryavtsev at Fig. 6 caption (Ex. 1204).
`
`Kudryavtsev notes that under certain conditions multi-step ionization can be the
`
`dominant ionization process. See, e.g., Kudryavtsev at Fig. 6 caption (Ex. 1204).
`
`Mozgrin took into account the teachings of Kudryavtsev when designing his
`
`experiments. Mozgrin at 401, ¶ spanning left and right cols. (“Designing the unit,
`
`we took into account the dependences which had been obtained in
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`[Kudryavtsev]…”) (Ex. 1203).
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`48. Kudryavtsev was not of record during the prosecution of the ’759
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`Patent.
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`D. Overview of Wang5
`49. Wang discloses a pulsed magnetron sputtering device having an anode
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`(24), a cathode (14), a magnet assembly (40), a DC power supply (100) (shown in
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`Fig. 7), and a pulsed DC power supply (80). See Wang at Figs. 1, 7, 3:57-4:55;
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`7:56-8:12 (Ex. 1205). Fig. 6 (annotated and reproduced below) shows a graph of
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` 5
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` Wang is art of record, but was not substantively applied during prosecution.
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`19
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`TSMC-1202 / Page 19 of 74
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`
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`Kortshagen Declaration
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`‘759 Patent, Claims 20, 21, 34-36, 38, 39, 47, and 49
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`
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`the power Wang applies to the plasma. The lower power level, PB, is generated by
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`the DC power supply 100 (shown in Fig. 7) and the higher power level, PP, is
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`generated by the pulsed power supply 80. See Wang 7:56-64 (Ex. 1205). Wang’s
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`lower power level, PB, maintains the plasma after ignition and application of the
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`higher power level, PP, raises the density of the plasma. Wang at 7:17-31 (“The
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`background power level, PB, is chosen to exceed the minimum power necessary to
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`support a plasma... [T]he application of the high peak power, PP, quickly causes
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`the already existing plasma to spread and increases the density of the plasma.”)
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`(Ex. 1205). Wang applies the teachings of Mozgrin and Kudryavtsev in a
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`commercial, industrial plasma sputtering device.
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`
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`V. CLAIM CONSTRUCTION
`50.
`I have been informed and understand that a claim in inter partes
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`review is given the “broadest reasonable construction in light of the specification.”
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`TSMC-1202 / Page 20 of 74
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`Kortshagen Declaration
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`‘759 Patent, Claims 20, 21, 34-36, 38, 39, 47, and 49
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`37 C.F.R. § 42.100(b). I have also been informed and understand that any claim
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`term that lacks a definition in the specification is therefore also given a broad
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`interpretation. The following discussion proposes constructions of and support
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`therefore of those terms. I have been informed and understand that any claim
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`terms not included in the following discussion are to be given their broadest
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`reasonable interpretation in light of the specification as commonly understood by
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`those of ordinary skill in the art. Moreover, should the Patent Owner, in order to
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`avoid the prior art, contend that the claim has a construction different from its
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`broadest reasonable interpretation, I have been informed and understand that the
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`appropriate course is for the Patent Owner to seek to amend the claim to expressly
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`correspond to its contentions in this proceeding.
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`A.
`“weakly-ionized plasma” and “strongly-ionized plasma”
`51. The challenged claims recite “weakly-ionized plasma” and “strongly-
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`ionized plasma.”
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`52. These terms relate to the density of the plasma, i.e., a weakly-ionized
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`plasma has a lower density than a strongly-ionized plasma. With reference to Fig.
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`4, the ‘759 Patent describes forming a weakly-ionized plasma between times t1 and
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`t2 by application of the low power 302 and then goes on to describe forming a
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`TSMC-1202 / Page 21 of 74
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`Kortshagen Declaration
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`‘759 Patent, Claims 20, 21, 34-36, 38, 39, 47, and 49
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`
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`strongly-ionized plasma by application of higher power 304. ‘759 Patent at 10:22-
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`29; 10:66-11:4 (Ex. 1201). The ‘759 Patent also provides exemplary densities for
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`the weakly-ionized and strongly-ionized plasmas. See ‘759 Patent at claim 32
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`(“wherein the peak plasma density of the weakly-ionized plasma is less than about
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`1012 cm˗3”); claim 33 (“wherein the peak plasma density of the strongly-ionized
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`plasma is greater than about 1012 cm˗3”) (Ex. 1201).
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`53. Therefore, I have used the following constructions:
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` “weakly-ionized plasma” means “a lower density plasma” and
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` “strongly-ionized plasma” means “a higher density plasma.”
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`54. The constructions proposed above are consistent with the position the
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`Patent Owner has taken in other jurisdictions. For example, the Patent Owner,
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`when faced with a clarity objection during prosecution of a related European patent
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`application, argued that “it is [sic] would be entirely clear to the skilled man, not
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`just in view of the description, that a reference to a ‘weakly-ionised plasma’ in the
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`claims indicates a plasma having an ionisation level lower than that of a ‘strongly-
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`ionized plasma’ and there can be no lack of clarity.” 04/21/08 Response in EP
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`1560943 (Ex. 1224).
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`TSMC-1202 / Page 22 of 74
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`Kortshagen Declaration
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`‘759 Patent, Claims 20, 21, 34-36, 38, 39, 47, and 49
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`
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`B.
`“multi-step ionization process”
`55. A multi-step ionization process produces ions using at least two steps:
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`(a) convert ground state atoms (or molecules) to excited atoms (or molecules); and
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`(b) convert excited atoms (or molecules) to ions. The ‘759 Patent and its file
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`history clearly describe this aspect of a “multi-step ionization process”: “[T]he
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`term ‘multi-step’ ionization as used in the present application refers to an
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`ionization process that requires ground state atoms and molecules to transition
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`from the ground state to at least one intermediate excited state before being fully
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`ionized.” See 05/02/06 Resp. at 11 (Ex. 1213). See also ‘759 patent at 9:37-51
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`(Ex. 1201).
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`56. Also, during prosecution the Patent Owner argued that multi-step
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`ionization processes must produce a statistically significant amount of ions by this
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`two-step process. 02/24/05 Resp. at 16 (Ex. 1209) (“However, the Applicant
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`submits that the ions in the [prior art] pre-ionized plasma are generated by
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`direction ionization and any ions that are generated by a multi-step ionization
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`process will be statistically insignificant.”). See also, e.g., 02/24/05 Resp. at 13,
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`14, 16, 17 (Ex. 1209); and 10/27/05 Resp. at 11, 12, 13, 15 (Ex. 1211).
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`TSMC-1202 / Page 23 of 74
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`Kortshagen Declaration
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`‘759 Patent, Claims 20, 21, 34-36, 38, 39, 47, and 49
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`
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`57. Therefore, I have used the following construction: “multi-step
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`ionization process” means “an ionization process in which a statistically significant
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`portion of the ions are produced by exciting ground state atoms or molecules and
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`then ionizing the excited atoms or molecules.
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`VI. SPECIFIC GROUNDS FOR PETITION
`58. The below sections demonstrate in detail how the prior art discloses
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`each and every limitation of claims 20, 21, 34-36, 38, 39, 47 and 49 of the ’759
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`Patent, and how those claims are rendered obvious by the prior art.
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`59.
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`I have further reviewed and understand the claim charts submitted by
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`Petitioner in the above-captioned inter partes review (Exs. 1225-1234), showing
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`that each limitation in the foregoing claims is taught in the art. I understand these
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`claim charts were submitted in an ongoing litigation involving the Petitioner and
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`the Patent Owner. Those charts present in summary form the analysis below and I
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`agree with them.
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`A. Ground I: Claims 20 and 34 are obvious in view of the
`combination of Mozgrin and Kudryavtsev
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`60.
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`I have further reviewed and understand the claim chart submitted by
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`Petitioner in the above-captioned inter partes review (Ex. 1225), showing that
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`claims 20 and 34 are obvious in view of the combination of Mozgrin and
`24
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`TSMC-1202 / Page 24 of 74
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`Kortshagen Declaration
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`‘759 Patent, Claims 20, 21, 34-36, 38, 39, 47, and 49
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`
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`Kudryavtsev. I understand this claim chart was submitted in an ongoing litigation
`
`involving the Petitioner and the Patent Owner. This chart presents in summary
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`form the analysis below and I agree with it.
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`1.
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`Independent claim 20
`a)
`The preamble
`61. The preamble of claim 20 reads, “A method of generating sputtering
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`flux.” “Flux” refers to material that is sputtered from the target. Mozgrin
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`discloses a sputtering source. Mozgrin 403, right col, ¶4 (“Regime 2 was
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`characterized by intense cathode sputtering…”) (Ex. 1203). Mozgrin therefore
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`teaches the preamble of claim 20.
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`b)
`Limitation (a)
`62. Limitation (a) of claim 20 reads, “ionizing a feed gas to generate a
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`weakly-ionized plasma proximate to the sputtering target.”
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`63. The ‘759 Patent uses the terms “weakly-ionized plasma” and “pre-
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`ionized plasma” synonymously. ‘759 Patent at 6:30-32 (“The weakly-ionized
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`plasma is also referred to as a pre-ionized plasma.”) (Ex. 1201). Mozgrin’s power
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`supply (shown in Fig. 2) generates a pre-ionized plasma in Mozgrin’s region 1.
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`Mozgrin at 402, right col, ¶2 (“Figure 3 shows typical voltage and current
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`
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`25
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`TSMC-1202 / Page 25 of 74
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`
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`Kortshagen Declaration
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`‘759 Patent, Claims 20, 21, 34-36, 38, 39, 47, and 49
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`
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`oscillograms.… Part I in the voltage oscillogram represents the voltage of the
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`stationary discharge (pre-ionization stage).”) (Ex. 1203). Also, the Patent Owner
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`admitted that Mozgrin discloses a pre-ionized (i.e., a weakly-ionized) plasma. See,
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`e.g., 02/24/05 Resp. at 16, ¶ 2 (“[Mozgrin’s] pre-ionization stage is generated using
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`a high-voltage power supply unit…. However, the Applicant submits that the ions
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`in the pre-ionized plasma are generated by direct ionization...”) (Ex. 1209).
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`64. Moreover, the density of Mozgrin’s pre-ionized plasma matches the
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`exemplary density for weakly-ionized plasma given in the ‘759 Patent. ‘759 Patent
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`at claim 32 (“wherein the peak plasma density of the weakly-ionized plasma is less
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`than about 1012 cm˗3”) (Ex. 1201); Mozgrin at 401, right col, ¶2 (“[f]or pre-
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`ioni