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`EXHIBIT B.05
`U.S. Patent No. 7,604,716
`
`(cid:120) U.S. Patent No. 7,604,716 (“‘716 Patent”)
`
`(cid:120) D.V. Mozgrin, et al, High-Current Low-Pressure Quasi-Stationary Discharge in a
`Magnetic Field: Experimental Research, Plasma Physics Reports, Vol. 21, No. 5, 1995
`(“Mozgrin”)
`
`(cid:120) U.S. Pat. No. 6,190,512 (“Lantsman”)
`
`(cid:120) Dennis M. Manos & Daniel L. Flamm, Plasma Etching: An Introduction, Academic Press
`1989 (“Manos”)
`
`(cid:120) Milton Ohring, The Material Science of Thin Films, Academic Press, 1992 (“Ohring”)
`
`(cid:120) Donald L. Smith, Thin-Film Deposition: Principles & Practice, McGraw Hill, 1995
`(“Smith”)
`
`
`
`Claims 12 and 13
`
`1. An apparatus for
`generating a strongly-
`ionized plasma, the
`apparatus comprising:
`
`a. an ionization source
`that generates a weakly-
`ionized plasma from a
`
`Mozgrin in view of Lantsman
`
`Mozgrin discloses an apparatus for generating a strongly-ionized
`plasma.
`
`‘716 Patent at claim 24 (“wherein the peak plasma density of the
`strongly-ionized plasma is greater than about 1012 cm(cid:1956)3”)
`
`Mozgrin at Fig 1
`
`Mozgrin at 400, right col, ¶ 4 (“To study the high-current forms of
`the discharge, we used two types of devices: a planar magnetron
`and a system with specifically shaped hollow electrodes.”)
`
`Mozgrin at 401, right col, ¶2 (“For pre-ionization … the initial
`plasma density in the 109 – 1011 cm-3 range.”)
`
`Mozgrin at 409, left col, ¶ 4 (“The implementation of the high-
`current magnetron discharge (regime 2) in sputtering … plasma
`density (exceeding 2x1013 cm-3).”)
`
`Mozgrin at 409, left col, ¶5 (“The high-current diffuse discharge
`(regime 3) is useful for producing large-volume uniform dense
`plasmas ni (cid:35) 1.5x1015cm-3…”).
`
`Mozgrin discloses an ionization source that generates a weakly-
`ionized plasma from a feed gas contained in a chamber.
`
`‘716 Patent at 5:14-15 (“The weakly-ionized plasma 232 is
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`Claims 12 and 13
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`feed gas contained in a
`chamber,
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`EXHIBIT B.05
`U.S. Patent No. 7,604,716
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`Mozgrin in view of Lantsman
`
`also referred to as a pre-ionized plasma.”)
`
`‘716 Patent at claim 23 (“wherein the peak plasma density
`of the weakly-ionized plasma is less than about 1012 cm(cid:1956)3”)
`
`Mozgrin at Figs. 1, 2, 3, 6, 7
`
`Mozgrin at 401, left col, ¶ 1 (“The [plasma] discharge had
`an annular shape and was adjacent to the cathode.”)
`
`Mozgrin at 401, left col, ¶ 4 (“[A]pplying a square voltage
`pulse to the discharge gap which was filled up with either
`neutral or pre-ionized gas.”)
`
`Mozgrin at 402, right col, ¶2 (“Figure 3 shows typical
`voltage and current oscillograms.… Part I in the voltage
`oscillogram represents
`the voltage of
`the stationary
`discharge (pre-ionization stage).”)
`
`Mozgrin at 401, right col, ¶2 (“[f]or pre-ionization, we used
`a stationary magnetron discharge; … provided the initial
`plasma density in the 109 – 1011 cm(cid:1956)3 range.”)
`
`Mozgrin at 400, right col, ¶ 3 (“We investigated the
`discharge regimes in various gas mixtures at 10-3 – 10
`torr…”)
`
`Mozgrin at 402, ¶ spanning left and right cols (“We studied
`the high-current discharge in wide ranges of discharge
`current…and operating pressure…using various gases (Ar,
`their mixtures of various
`N2, SF6, and H2) or
`composition…”)
`
`the weakly-ionized
`plasma substantially
`eliminating the
`probability of
`developing an electrical
`breakdown condition in
`the chamber; and
`
`Mozgrin discloses the weakly-ionized plasma substantially
`eliminating the probability of developing an electrical breakdown
`condition in the chamber.
`
`Mozgrin at 406, right col, ¶3 (“pre-ionization was not necessary;
`however, in this case, the probability of discharge transferring to
`arc mode increased.”).
`
`Mozgrin at Figs. 4 and 7.
`
`Mozgrin at 400, left col, ¶ 3 (“Some experiments on magnetron
`systems of various geometry showed that discharge regimes which
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`EXHIBIT B.05
`U.S. Patent No. 7,604,716
`
`Claims 12 and 13
`
`Mozgrin in view of Lantsman
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`
`
`do not transit to arcs can be obtained even at high currents.”)
`
`Mozgrin at 400, right col, ¶ 1 (“A further increase in the discharge
`currents caused the discharges to transit to the arc regimes…”).
`
`Mozgrin at 404, left col, ¶ 4 (“The parameters of the shaped-
`electrode discharge transit to regime 3, as well as the condition of
`its transit to arc regime 4, could be well determined for every given
`set of the discharge parameters.”).
`
`Mozgrin at 403, left col, ¶ 2. (“Then, we studied regimes 2 and 3
`separately to determine the boundary parameters of their
`occurrence, such as current, voltage….”).
`
`Mozgrin at 400, right col, ¶ 1 (“A further increase in the discharge
`currents caused the discharges to transit to the arc regimes….”).
`
`Mozgrin 404, left col, ¶ 4 (“If the current was raised above 1.8 kA
`or the pulse duration was increase to 2 – 10 ms, an instability
`development and discharge contraction was observed.”).
`
`Background:
`Manos at 231 (“We shall … [include] information on unipolar arcs.
`These are a problem…”)
`
`Manos at 237 (“When such an arc occurs, the metal object is
`melted at the arc spot. The metal is explosively released…. How
`does one prevent such an arc? There are several methods…”)
`
`Mozgrin discloses a power supply that supplies power to the
`weakly-ionized plasma though an electrical pulse that is applied
`across the weakly-ionized plasma, the electrical pulse having at
`least one of a magnitude and a rise-time that is sufficient to
`transform the weakly-ionized plasma to a strongly-ionized plasma
`without developing an electrical breakdown condition in the
`chamber.
`
`‘716 Patent at claim 23 (“wherein the peak plasma density
`of the weakly-ionized plasma is less than about 1012 cm(cid:1956)3”)
`
`‘716 Patent at claim 24 (“wherein the peak plasma density of the
`strongly-ionized plasma is greater than about 1012 cm(cid:1956)3”)
`
`Mozgrin at Fig. 1
`
`b. a power supply that
`supplies power to the
`weakly-ionized plasma
`though an electrical
`pulse that is applied
`across the weakly-
`ionized plasma, the
`electrical pulse having at
`least one of a magnitude
`and a rise-time that is
`sufficient to transform
`the weakly-ionized
`plasma to a strongly-
`ionized plasma without
`developing an electrical
`breakdown condition in
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`EXHIBIT B.05
`U.S. Patent No. 7,604,716
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`Claims 12 and 13
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`Mozgrin in view of Lantsman
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`the chamber.
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`
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`Mozgrin at Fig. 2
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`Mozgrin at Fig. 3
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`EXHIBIT B.05
`U.S. Patent No. 7,604,716
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`Claims 12 and 13
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`Mozgrin in view of Lantsman
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`
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`Mozgrin at 402, right col, ¶ 2 (“Part 1 in the voltage oscillogram
`represents the voltage of the stationary discharge (pre-ionization
`stage).”)
`Mozgrin at 401, right col, ¶ 1 (“Thus, the supply unit was made
`providing square voltage and current pulses with [rise] times
`(leading edge) of 5 – 60 (cid:151)s…”).
`Mozgrin 403, right col, ¶4 (“Regime 2 was characterized by intense
`cathode sputtering…”) (emphasis added).
`Mozgrin at 409, left col, ¶ 4 (“The implementation of the high-
`current magnetron discharge (regime 2) in sputtering … plasma
`density (exceeding 2x1013 cm-3).”).
`Mozgrin at 409, left col, ¶5 (“The high-current diffuse discharge
`(regime 3) is useful for producing large-volume uniform dense
`plasmas ni (cid:35) 1.5x1015cm-3…”)
`Mozgrin at 401, ¶ spanning left and right columns (“Designing the
`[pulsed supply] unit, we took into account the dependences which
`had been obtained in [Kudryavtsev] of ionization relaxation on pre-
`ionization parameters, pressure, and pulse voltage amplitude.”)
`Mozgrin at 400, left col, ¶ 3 (“Some experiments on magnetron
`systems of various geometry showed that discharge regimes which
`do not transit to arcs can be obtained even at high currents.”)
`Mozgrin at 400, right col, ¶ 1 (“A further increase in the discharge
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`EXHIBIT B.05
`U.S. Patent No. 7,604,716
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`Claims 12 and 13
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`Mozgrin in view of Lantsman
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`
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`currents caused the discharges to transit to the arc regimes…”).
`Mozgrin at 401, right col, ¶2 (“For pre-ionization … the initial
`plasma density in the 109 – 1011 cm-3 range.”)
`Mozgrin at 404, left col, ¶ 3 (“The parameters of the shaped-
`electrode discharge…transit to arc regime 4, could be well
`determined… The point of the planar-magnetron discharge transit
`to the arc regime was determined by discharge voltage and
`structure changes...”).
`Mozgrin at 404, left col, ¶ 4 (“If the current was raised above 1.8
`kA or the pulse duration was increase to 2 – 10 ms, an instability
`development and discharge contraction was observed.”).
`Mozgrin at Fig. 4
`
`Mozgrin at Fig. 7
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`12. The apparatus of
`
`The combination of Mozgrin with Lantsman discloses a gas line
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`Claims 12 and 13
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`claim 1 further
`comprising a gas line
`that is coupled to the
`chamber, the gas line
`supplying feed gas to
`the strongly-ionized
`plasma that transports
`the strongly-ionized
`plasma by a rapid
`volume exchange.
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`EXHIBIT B.05
`U.S. Patent No. 7,604,716
`
`Mozgrin in view of Lantsman
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`that is coupled to the chamber, the gas line supplying feed gas to
`the strongly-ionized plasma that transports the strongly-ionized
`plasma by a rapid volume exchange.
`
`‘716 Patent at 2:19-30 [Discussed in connection with a prior art
`system] (“FIG. 1 illustrates a cross-sectional view of a known
`plasma generating apparatus 100…. The vacuum pump 106 is
`adapted to evacuate the vacuum chamber 104…. A feed gas from a
`feed gas source 109, such as an argon gas source, is introduced into
`the vacuum chamber 104 through a gas inlet 110. The gas flow is
`controlled by a valve 112.”) (emphasis added).
`
`‘716 Patent at Fig. 1.
`
`Lantsman at Fig. 6
`
`
`Lantsman at 3:9-13 (“[A]t the beginning of processing, this switch
`is closed and gas is introduced into the chamber. When the plasma
`process is completed, the gas flow is stopped….”)
`
`Lantsman at 4:36-38 (“To end processing, primary supply 10 is
`disabled, reducing the plasma current and deposition on the wafer.
`Then, gas flow is terminated….”)
`
`Lantsman at 5:39-42 (“Sometime thereafter, gas flow is initiated
`and the gas flow and pressure (trace 48) begin to ramp upwards
`toward normal processing levels.”)
`
`Lantsman at 5:42-45
`
`Lantsman at 2:48-51 (“This secondary power supply ‘pre-ignites’
`the plasma so that when the primary power supply is applied, the
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`EXHIBIT B.05
`U.S. Patent No. 7,604,716
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`Claims 12 and 13
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`Mozgrin in view of Lantsman
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`
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`system smoothly transitions to final plasma development and
`deposition.”)
`
`It would have been obvious to one of ordinary skill to continue to
`apply the feed gas during Mozgrin’s regions 1 and 2 as taught by
`Lantsman. Such a continuous introduction of feed gas balances gas
`withdrawn by the vacuum system (e.g., as shown in the drawings
`from Ohring and Smith, copied below) so as to maintain a desired
`pressure.
`
`One of ordinary skill would have been motivated to combine
`Mozgrin and Lantsman. Both Mozgrin and Lantsman are directed
`to sputtering using plasma. See Mozgrin at 409, left col, ¶ 4 (“The
`implementation of the high-current magnetron discharge (regime 2)
`in sputtering or layer-deposition technologies provides an
`enhancement in the flux of deposited materials and plasma
`density….”); see also Lantsman at 1:6-8 (“This invention relates to
`reduction of device damage in plasma processes, including DC
`(magnetron or non-magnetron) sputtering, and RF sputtering.”).
`Both references also relate to sputtering systems that use two power
`supplies, one for pre-ionization and one for deposition. See
`Lantsman at 4:45-47 (“[T]he secondary [power] supply 32 is used
`to pre-ignite the plasma, whereas the primary [power] supply 10 is
`used to generate deposition.”); see Mozgrin at Fig. 2. (showing the
`“high-voltage supply unit” and the “stationary discharge supply
`unit”)
`
`Moreover, both Mozgrin and Lantsman are concerned with
`generating plasma while avoiding arcing. See Mozgrin at 400, right
`col, ¶ 3 (“The main purpose of this work was to study
`experimentally a high-power noncontracted quasi-stationary
`discharge in crossed fields of various geometry and to determine
`their parameter ranges.”); see also Lantsman at 1:51-59
`(“Furthermore, arcing which can be produced by overvoltages can
`cause local overheating of the target, leading to evaporation or
`flaking of target material into the processing chamber and causing
`substrate particle contamination and device damage…. Thus, it is
`advantageous to avoid voltage spikes during processing whenever
`possible.”).
`
`Summarizing, Mozgrin and Lantsman relate to the same
`application. Further, one of ordinary skill would have been
`motivated to use Lantsman’s continuous gas flow in Mozgrin so as
`to maintain a desired pressure in the chamber. Finally, use of
`Lantsman’s continuous gas flow in Mozgrin would have been a
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`EXHIBIT B.05
`U.S. Patent No. 7,604,716
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`Claims 12 and 13
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`Mozgrin in view of Lantsman
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`combination of old elements in which each element behaved as
`expected. The combination of Mozgrin and Lantsman therefore
`teaches the function required by the “means for diffusing…”
`
`Background:
`
`Ohring at Fig. 3-13
`
`Smith at Fig. 3-1
`
`
`
`13. The apparatus of
`claim 12 wherein the
`gas volume exchange
`permits additional
`power to be absorbed by
`the strongly-ionized
`plasma.
`
`
`The combination of Mozgrin with Lantsman discloses the gas
`volume exchange permits additional power to be absorbed by the
`strongly-ionized plasma.
`
`See evidence cited in claim 12.
`
`It would have been obvious to one of ordinary skill to continue to
`add the feed gas in Mozgrin during production of the strongly-
`ionized plasma (i.e., during either of regions 2 or 3). Such addition
`of the feed gas would have both transported the strongly-ionized
`plasma by rapid volume exchange and allowed additional power
`from Mozgrin’s repeating voltage pulses to be absorbed by the
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`EXHIBIT B.05
`U.S. Patent No. 7,604,716
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`Claims 12 and 13
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`Mozgrin in view of Lantsman
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`strongly-ionized plasma.
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