`‘716 Patent, Claims 1-11 and 33
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`DOCKET NO: 0107131.00273US1
`’716 PATENT
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`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
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`PATENT: 7,604,716, CLAIMS 1-11 AND 33
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`INVENTOR: ROMAN CHISTYAKOV
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`
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`FILED: JULY 22, 2004
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` ISSUED: OCTOBER 20, 2009
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`TITLE: METHODS AND APPARATUS FOR GENERATING HIGH-
`DENSITY PLASMA
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`Mail Stop PATENT BOARD
`Patent Trial and Appeal Board
`U.S. Patent & Trademark Office
`P.O. Box 1450
`Alexandria, VA 22313-1450
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`
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`DECLARATION OF UWE KORTSHAGEN, PH.D., REGARDING
`CLAIMS 1-11 AND 33 OF U.S. PATENT NO. 7,604,716
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`I, Uwe Kortshagen, declare as follows:
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`1. My name is Uwe Kortshagen.
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`2.
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`I received my Diploma in Physics from the University of Bochum in
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`Germany in 1988. I received my Ph.D. in Physics from University of Bochum in
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`1991 and my Habilitation in Experimental Physics from University of Bochum in
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`1995.
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`INTEL 1002
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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`3.
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`I am a Distinguished McKnight University Professor at the University
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`of Minnesota. I have been the Head of the Mechanical Engineering Department at
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`the University of Minnesota since July 2008. I have been a Professor at the
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`Mechanical Engineering Department at the University of Minnesota since August
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`2003. Between August 1999 and August 2003, I was an Associate Professor at the
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`Mechanical Engineering Department at the University of Minnesota. Between July
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`1996 and August 1999, I was an Assistant Professor at the Mechanical Engineering
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`Department at the University of Minnesota. Between April 1996 and July 1996, I
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`was a Lecturer at the Department of Physics and Astronomy at the University of
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`Bochum, Germany. Between August 2006 and June 2008, I was the Director of
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`Graduate Studies at the Mechanical Engineering Department at the University of
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`Minnesota.
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`4.
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`I have taught courses on Introduction to Plasma Technology and
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`Advanced Plasma Technology. These courses include significant amounts of
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`material on plasma technology. In addition, I have taught a Special Topics class
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`on Plasma Nanotechnology.
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`5.
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`Plasma processes for advanced technological applications has been
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`the primary area of my professional research for over 30 years. Most of my Ph.D.
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`students go on to work on plasmas either in academia or the semiconductor
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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`industry.
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`6.
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`7.
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`A copy of my latest curriculum vitae (CV) is attached as Appendix A.
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`I have reviewed the specification, claims, and file history of U.S.
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`Patent No. 7,604,716 (the “‘716 patent”) (Ex. 1101). I understand that the ’716
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`patent was filed on July 22, 2006. I understand that, for purposes determining
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`whether a publication will qualify as prior art, the earliest date that the ’716 patent
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`could be entitled to is November 4, 2002, as shown on the Certificate of
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`Correction.
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`8.
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`I have reviewed the following publications:
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` D.V. Mozgrin, et al, High-Current Low-Pressure Quasi-Stationary
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`Discharge in a Magnetic Field: Experimental Research, Plasma Physics
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`Reports, Vol. 21, No. 5, pp. 400-409, 1995 (“Mozgrin” (Ex. 1003)).
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` U.S. Pat. No. 6,413,382 (“Wang” (Ex. 1004)).
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` D.V. Mozgrin, High-Current Low-Pressure Quasi-Stationary Discharge in a
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`Magnetic Field: Experimental Research, Thesis at Moscow Engineering
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`Physics Institute, 1994 (“Mozgrin Thesis” (Ex. 1005)). Exhibit 1005 is a
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`certified English translation of the original Mozgrin Thesis, attached as
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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`Exhibit 1006. A copy of the catalogue entry for the Mozgrin Thesis at the
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`Russian State Library is attached as Exhibit 1007.
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`9.
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`I have read and understood each of the above publications. The
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`disclosure of each of these publications provides sufficient information for
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`someone to make and use the plasma generation and sputtering processes that are
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`described in the above publications.
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`10.
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`I have considered certain issues from the perspective of a person of
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`ordinary skill in the art at the time the ‘716 patent application was filed. In my
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`opinion, a person of ordinary skill in the art for the ‘716 patent would have found
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`the ‘716 invalid.
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`11.
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`I have been retained by Intel Corporation (“Intel” or “Petitioner”) as
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`an expert in the field of plasma technology. I am being compensated at my normal
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`consulting rate of $350/hour for my time. My compensation is not dependent on
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`and in no way affects the substance of my statements in this Declaration.
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`12.
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`I have no financial interest in the Petitioner. I similarly have no
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`financial interest in the ’716 patent, and have had no contact with the named
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`inventor of the ’716 patent.
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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`I.
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`RELEVANT LAW
`13.
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`I am not an attorney. For the purposes of this declaration, I have been
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`informed about certain aspects of the law that are relevant to my opinions. My
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`understanding of the law is as follows:
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`A. Claim Construction
`14.
`I have been informed that claim construction is a matter of law and
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`that the final claim construction will ultimately be determined by the Board. For
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`the purposes of my invalidity analysis in this proceeding and with respect to the
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`prior art, I have applied the broadest reasonable construction of the claim terms as
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`they would be understood by one skilled in the relevant art.
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`15.
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`I have been informed and understand that a claim in inter partes
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`review is given the “broadest reasonable construction in light of the specification.”
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`37 C.F.R. § 42.100(b). I have also been informed and understand that any claim
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`term that lacks a definition in the specification is therefore also given a broad
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`interpretation.
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`B. Anticipation
`16.
`I have been informed and understand that a patent claim can be
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`considered to have been anticipated at the time the application was filed. This
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`means that if all of the requirements of a claim are found in a single prior art
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`reference, the claim is not patentable. I have also been informed that a U.S. Patent
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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`can incorporate by reference subject matter from another U.S. Patent or Patent
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`Publication. In such instances, I have been informed that I should consider them to
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`be a single prior art reference. I further understand that a claim is anticipated by a
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`reference when all the limitations of the claim are present in a single embodiment
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`described in the reference, even if there are multiple embodiments disclosed in the
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`reference.
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`C. Obviousness
`17.
`I have been informed and understand that a patent claim can be
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`considered to have been obvious to a person of ordinary skill in the art at the time
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`the application was filed. This means that, even if all of the requirements of a
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`claim are not found in a single prior art reference, the claim is not patentable if the
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`differences between the subject matter in the prior art and the subject matter in the
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`claim would have been obvious to a person of ordinary skill in the art at the time
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`the application was filed.
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`18.
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`I have been informed and understand that a determination of whether
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`a claim would have been obvious should be based upon several factors, including,
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`among others:
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` the level of ordinary skill in the art at the time the application was filed;
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` the scope and content of the prior art;
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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` what differences, if any, existed between the claimed invention and the
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`prior art.
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`19.
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`I have been informed and understand that the teachings of two or
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`more references may be combined in the same way as disclosed in the claims, if
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`such a combination would have been obvious to one having ordinary skill in the
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`art. In determining whether a combination based on either a single reference or
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`multiple references would have been obvious, it is appropriate to consider, among
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`other factors:
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` whether the teachings of the prior art references disclose known concepts
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`combined in familiar ways, and when combined, would yield predictable
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`results;
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` whether a person of ordinary skill in the art could implement a
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`predictable variation, and would see the benefit of doing so;
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` whether the claimed elements represent one of a limited number of
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`known design choices, and would have a reasonable expectation of
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`success by those skilled in the art;
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` whether a person of ordinary skill would have recognized a reason to
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`combine known elements in the manner described in the claim;
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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` whether there is some teaching or suggestion in the prior art to make the
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`modification or combination of elements claimed in the patent; and
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` whether the innovation applies a known technique that had been used to
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`improve a similar device or method in a similar way.
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`20.
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`I understand that one of ordinary skill in the art has ordinary
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`creativity, and is not an automaton.
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`21.
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`I understand that in considering obviousness, it is important not to
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`determine obviousness using the benefit of hindsight derived from the patent being
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`considered.
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`II. BRIEF DESCRIPTION OF TECHNOLOGY
`A.
`Plasma
`22. A plasma is a collection of ions, free electrons, and neutral atoms.
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`The negatively charged free electrons and positively charged ions are present in
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`roughly equal numbers such that the plasma as a whole has no overall electrical
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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`charge. The “density” of a plasma refers to the number of ions or electrons that are
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`present in a unit volume.1
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`23. Plasmas had been used in research and industrial applications for
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`decades before the ‘716 patent was filed. For example, sputtering is an industrial
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`process that uses plasmas to deposit a thin film of a target material onto a surface
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`called a substrate (e.g., silicon wafer during a semiconductor manufacturing
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`operation). Ions in the plasma strike a target surface causing ejection of a small
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`amount of target material. The ejected target material then forms a film on the
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`substrate.
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`24. Under certain conditions, electrical arcing can occur during sputtering.
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`Arcing is undesirable because it causes explosive release of droplets from the
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`target that can splatter on the substrate. The need to avoid arcing while sputtering
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`was known long before the ‘716 Patent was filed.
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`B.
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`Ions and Excited Atoms
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`1 The terms “plasma density” and “electron density” are often used interchangeably
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`because the negatively charged free electrons and positively charged ions are
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`present in roughly equal numbers in plasmas that do not contain negatively
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`charged ions or clusters.
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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`25. Atoms have equal numbers of protons and electrons. Each electron
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`has an associated energy state. If all of an atom’s electrons are at their lowest
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`possible energy state, the atom is said to be in the “ground state.”
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`26. On the other hand, if one or more of an atom’s electrons is in a state
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`that is higher than its lowest possible state, then the atom is said to be an “excited
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`atom.” Excited atoms are electrically neutral– they have equal numbers of
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`electrons and protons. A collision with a free electron (e-) can convert a ground
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`state atom to an excited atom. For example, the ‘716 Patent uses the following
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`equation to describe production of an excited argon atom, Ar*, from a ground state
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`argon atom, Ar. See ‘716 Patent at 9:7 (Ex. 1001).
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`Ar + e- Ar* + e-
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`27. An ion is an atom that has become disassociated from one or more of
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`its electrons. A collision between a free, high energy, electron and a ground state
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`or excited atom can create an ion. For example, the ‘716 Patent uses the
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`following equations to describe production of an argon ion, Ar+, from a ground
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`state argon atom, Ar, or an excited argon atom, Ar*. See ‘716 Patent at 2:65 and
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`9:9 (Ex. 1001).
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`Ar + e- Ar+ + 2e-
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`Ar* + e- Ar+ + 2e-
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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`28. The production of excited atoms and ions was well understood long
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`before the ‘716 patent was filed.
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`III. OVERVIEW OF THE ‘716 PATENT
`A.
`Summary of Alleged Invention of the ’716 Patent
`29. The ‘716 Patent describes generating a plasma by applying a electrical
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`pulse in a manner that allegedly reduces the probability of arcing.
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`30. More specifically, the claims of the ‘716 Patent are generally directed
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`to generating a, so called, “weakly-ionized plasma” and then applying an electrical
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`pulse to increase the density of that plasma so as to form a “strongly-ionized
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`plasma.” The weakly-ionized plasma is claimed to reduce the probability of
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`forming an electrical breakdown condition.
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`31. Specific claims are directed to further operational details such as
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`supplying a feed gas to the plasma, characteristics of the electrical pulse,
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`generating a magnetic field and the type of power supply used.
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`B.
`32.
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`Prosecution History
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`I understand that the ‘716 patent is a continuation of U.S. Pat. App.
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`No. 10/065,629 (now U.S. Pat. No. 6,853,142) (Ex. 1008). See ‘716 Patent at
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`Certificate of Correction (Ex. 1001).
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`33.
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`I understand that the first substantive office action rejected all
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`independent claims as being anticipated. See 03/27/08 Office Action at 2 (Ex.
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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`1014). I understand that the applicant then amended every independent claim to
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`require “substantially eliminating the probability of developing an electrical
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`breakdown condition in the chamber” and “without developing an electrical
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`breakdown condition in the chamber” or similar limitations. See 09/24/08 Resp.
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`(Ex. 1015).
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`34. Following that amendment, I understand that the claims were allowed.
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`I understand that the Notice of Allowance explicitly recites these limitations as the
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`examiner’s reasons for allowance. 06/11/09 Allowance at 2 (“The closest prior art
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`of record Kouznetsov WO 98/40532 fails to teach the claimed elements including
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`‘substantially eliminating the probability of developing an electrical breakdown
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`condition in the chamber’ and ‘without developing an electrical breakdown
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`condition in the chamber.”) (Ex. 1016). However, as explained in detail below,
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`and contrary to the Examiner’s reasons for allowance, the prior art addressed
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`herein teaches those and all other limitations of the challenged claims.
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`IV. OVERVIEW OF THE PRIMARY PRIOR ART REFERENCES
`A.
`Summary of the Prior Art
`35. As explained in detail below, limitation-by-limitation, there is nothing
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`new or non-obvious in the challenged claims of the ‘716 Patent.
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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`B. Overview of Mozgrin2
`36. Mozgrin teaches forming a plasma “without forming an arc
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`discharge.”
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`37. Fig. 7 of Mozgrin, copied below, shows the current-voltage
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`characteristic (“CVC”) of a plasma discharge.
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`As shown, Mozgrin divides this CVC into four distinct regions.
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`38. Mozgrin calls region 1 “pre-ionization.” Mozgrin at 402, right col, ¶ 2
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`(“Part 1 in the voltage oscillogram represents the voltage of the stationary
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`discharge (pre-ionization stage).”) (Ex. 1003).
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`39. Mozgrin calls region 2 “high current magnetron discharge.” Mozgrin
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`at 409, left col, ¶ 4 (“The implementation of the high-current magnetron discharge
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`2 I understand that Mozgrin was art of record, but was not substantively applied
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`during prosecution.
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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`(regime 2)…”) (Ex. 1003). Application of a high voltage to the pre-ionized
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`plasma causes the transition from region 1 to 2. Mozgrin teaches that region 2 is
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`useful for sputtering. Mozgrin at 403, right col, ¶ 4 (“Regime 2 was characterized
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`by an intense cathode sputtering…”) (Ex. 1003).
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`40. Mozgrin calls region 3 “high current diffuse discharge.” Mozgrin at
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`409, left col, ¶ 5, (“The high-current diffuse discharge (regime 3)…”) (Ex. 1003).
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`Increasing the current applied to the “high-current magnetron discharge” (region 2)
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`causes the plasma to transition to region 3. Mozgrin also teaches that region 3 is
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`useful for etching, i.e., removing material from a surface. Mozgrin at 409, left col,
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`¶ 5 (“The high-current diffuse discharge (regime 3) is useful … Hence, it can
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`enhance the efficiency of ionic etching…”) (Ex. 1003).
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`41. Mozgrin calls region 4 “arc discharge.” Mozgrin at 402, right col, ¶ 3
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`(“…part 4 corresponds to the high-current low-voltage arc discharge…”) (Ex.
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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`1003). Further increasing the applied current causes the plasma to transition from
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`region 3 to the “arc discharge” region 4. 3
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`42. Within its broad disclosure of a range of issues related to sputtering
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`and etching, Mozgrin describes arcing and how to avoid it.
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`C. Overview of Wang4
`43. Wang discloses a pulsed magnetron sputtering device having an anode
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`(24), a cathode (14), a magnet assembly (40), a DC power supply (100) (shown in
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`Fig. 7), and a pulsed DC power supply (80). See Wang at Figs. 1, 7, 3:57-4:55;
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`7:56-8:12 (Ex. 1004). Fig. 6 (annotated and reproduced below) shows a graph of
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`the power Wang applies to the plasma. The lower power level, PB, is generated by
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`3 As one of ordinary skill would understand, the oscillogram shown in Mozgrin’s
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`Fig. 3 when taken as a whole corresponds to region 3 on Mozgrin’s Figs. 4 and 7,
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`i.e., Fig. 3 represents currents and voltages used to reach stable operation in region
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`3. Further, as one of ordinary skill would understand, an oscillogram
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`corresponding to region 2 on Mozgrin’s Figs. 4 and 7 (i.e., stable operation in
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`region 2) would have a different shape, e.g., the voltage would not drop as low as
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`shown in Fig. 3b and the current would be lower than what is shown in Fig. 3a.
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`4 I understand that Wang was art of record, but was not substantively applied
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`during prosecution.
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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`the DC power supply 100 (shown in Fig. 7) and the higher power level, PP, is
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`generated by the pulsed power supply 80. See Wang 7:56-64 (Ex. 1004). Wang’s
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`lower power level, PB, maintains the plasma after ignition and application of the
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`higher power level, PP, raises the density of the plasma. Wang at 7:17-31 (“The
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`background power level, PB, is chosen to exceed the minimum power necessary to
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`support a plasma... [T]he application of the high peak power, PP, quickly causes
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`the already existing plasma to spread and increases the density of the plasma.”)
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`(Ex. 1004). Wang applies the teachings of Mozgrin in a commercial, industrial
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`plasma sputtering device.
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`V. CLAIM CONSTRUCTION
`44.
`I have been informed and understand that a claim in inter partes
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`review is given the “broadest reasonable construction in light of the specification.”
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`37 C.F.R. § 42.100(b). I have also been informed and understand that any claim
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`term that lacks a definition in the specification is therefore also given a broad
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`interpretation. The following discussion proposes constructions of and support
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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`therefore of those terms. I have been informed and understand that any claim
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`terms not included in the following discussion are to be given their broadest
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`reasonable interpretation in light of the specification as commonly understood by
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`those of ordinary skill in the art. Moreover, should the Patent Owner, in order to
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`avoid the prior art, contend that the claim has a construction different from its
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`broadest reasonable interpretation, I have been informed and understand that the
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`appropriate course is for the Patent Owner to seek to amend the claim to expressly
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`correspond to its contentions in this proceeding.
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`45.
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`I have interpreted some claim terms which use the language “means
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`for” with a function identified in the same manner I understand the Board will use
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`to determine the meaning of the means plus function claim. In the attached petition
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`the function of the limitation is identified, the structure disclosed in the
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`specification for performing the function (and equivalents) is identified. I have
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`identified the function and the corresponding structure in the prior art during my
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`invalidity analysis.
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`B.
` “weakly-ionized plasma” and “strongly-ionized plasma”
`46. The challenged claims recite “weakly-ionized plasma” and “strongly-
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`ionized plasma.” These terms relate to the density of the plasma, i.e., a weakly-
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`ionized plasma has a lower density than a strongly-ionized plasma. With
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`reference to Fig. 3, the ‘716 Patent describes forming a weakly-ionized plasma
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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`between times t1 and t2 by application of the low power 302 and then goes on to
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`describe forming a strongly-ionized plasma by application of higher power 304.
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`‘716 Patent at 11:24-30; 11:66-12:6 (Ex. 1001). The ‘716 Patent also provides
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`exemplary densities for the weakly-ionized and strongly-ionized plasmas. See
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`‘716 Patent at claim 23 (“wherein a peak plasma density of the weakly-ionized
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`plasma is less than about 1012 cm˗3”); claim 24 (“wherein the peak plasma density
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`of the strongly-ionized plasma is greater than about 1012 cm˗3”) (Ex. 1001).
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`47. Therefore, I have used the following constructions:
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` “weakly-ionized plasma” means “a lower density plasma” and
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` “strongly-ionized plasma” means “a higher density plasma.”
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`48. The constructions proposed above are consistent with the position the
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`Patent Owner has taken in other jurisdictions. For example, the Patent Owner,
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`when faced with a clarity objection during prosecution of a related European patent
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`application, argued that “it is [sic] would be entirely clear to the skilled man, not
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`just in view of the description, that a reference to a ‘weakly-ionised plasma’ in the
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`claims indicates a plasma having an ionisation level lower than that of a ‘strongly-
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`ionized plasma’ and there can be no lack of clarity.” 04/21/08 Response in EP
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`1560943 (Ex. 1017).
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`C.
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`“means for ionizing a feed gas…” (claim 33)
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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`49. Claim 33 recites “means for ionizing a feed gas in a chamber to form
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`a weakly-ionized plasma that substantially eliminates the probability of developing
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`an electrical breakdown condition in the chamber.” The claimed function is:
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`“ionizing a feed gas in a chamber to form a weakly-ionized plasma that
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`substantially eliminates the probability of developing an electrical breakdown
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`condition in the chamber.”
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`50. The ‘716 Patent discloses at least the following corresponding
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`structure for the “means for ionizing…” limitation of claim 33: a power supply,
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`generating the voltage, current and power values shown in Fig. 4 (e.g., between t1 –
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`t2 and t6 – t7), electrically coupled to cathode (e.g., 204), anode (e.g., 216) and/or an
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`electrode (e.g., 452, 452’), wherein the cathode, anode and/or electrode are
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`arranged relative to a sputtering target as shown in Figs. 2A-2D and 6A-6D, and as
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`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
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`described in the text of the ‘716 Patent at 5:1-32, 16:10-25, 17:24-61, 17:62-18:15,
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`and 18:16-27 (Ex. 1001). 5
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`“means for supplying an electrical pulse…” (claim 33)
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`D.
`Claim 33 recites “means for supplying an electrical pulse across the weakly-
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`ionized plasma to transform the weakly-ionized plasma to a strongly-ionized
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`plasma without developing an electrical breakdown condition in the chamber.”
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`The claimed function is “supplying an electrical pulse across the weakly-ionized
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`plasma to transform the weakly-ionized plasma to a strongly-ionized plasma
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`without developing an electrical breakdown condition in the chamber.”
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`The ‘716 Patent discloses at least the following corresponding structure for
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`the “means for supplying an electrical pulse…” of claim 33: pulsed power supply
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`(e.g., 202), generating the voltage, current and power values shown in Fig. 4 (e.g.,
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`between t2 – t4), electrically coupled to a cathode (e.g., 204) and anode (e.g., 216),
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`5
`The ‘759 Patent discloses that “other techniques including UV radiation
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`techniques, X-ray techniques, electron beam techniques, ion beam techniques, or
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`ionizing filament techniques” can ionize a gas, but fails to describe any structure
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`for these “techniques.” See ‘716 Patent, 6:7-15 (Ex. 1001). The “means for
`
`ionizing…” cannot be construed to include any techniques that lack corresponding
`
`structure in the specification.
`
`- 20 -
`
`
`
`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
`
`wherein the cathode and anode are arranged relative to a sputtering target as shown
`
`in Figs. 2A-2D and 6A-6D, and as described in the text of the ‘716 Patent at 6:52-
`
`7:24, 8:9-19, 11:59-12:6, 13:14-44, 13:52-60, 16:64-18, 18:50-61, and 19:1-11
`
`(Ex. 1001).
`
`VI. SPECIFIC GROUNDS FOR REJECTION
`51. The below sections demonstrate in detail how the prior art discloses
`
`each and every limitation of claims 1-11 and 33 of the ’716 Patent, and how those
`
`claims are rendered anticipated or obvious by the prior art.
`
`52.
`
`I have further reviewed and understand the claim charts submitted by
`
`Petitioner in the above-captioned inter partes review (Exs. 1020-1022), showing
`
`that each limitation in the foregoing claims is taught in the art. I understand these
`
`claim charts were submitted in an ongoing litigation involving the Petitioner and
`
`the Patent Owner. Those charts present in summary form the analysis below and I
`
`agree with them.
`
`B. Ground I: Claims 1-5, 8-11 and 33 are anticipated by Mozgrin
`53.
`I have further reviewed and understand the claim chart submitted by
`
`Petitioner in the above-captioned inter partes review (Ex. 1020), showing that
`
`claims 1-5, 8-11 and 33 are anticipated by Mozgrin. I understand this claim chart
`
`was submitted in an ongoing litigation involving the Petitioner and the Patent
`
`- 21 -
`
`
`
`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
`
`Owner. This chart presents in summary form the analysis below and I agree with
`
`it.
`
`1.
`
`Independent claim 33 is anticipated by Mozgrin
`a)
`The preamble
`54. Claim 33 begins, “[a]n apparatus for generating a strongly-ionized
`
`plasma.” As shown in Fig. 1, Mozgrin teaches generating plasma in “two types of
`
`devices: a planar magnetron and a system with specifically shaped hollow
`
`electrodes.” Mozgrin at Fig. 1; 400, right col, ¶ 4. (Ex. 1003). The densities in
`
`Mozgrin’s regions 1-3 are summarized below.
`
` Region 1: 109 – 1011 cm-3.6
`
` Region 2: exceeding 2x1013 cm-3.7
`
` Region 3: 1.5x1015cm-3.8
`
`
`6 Mozgrin at 401, right col, ¶2 (“For pre-ionization … the initial plasma density in
`
`the 109 – 1011 cm-3 range.”) (Ex. 1003).
`
`7 Mozgrin at 409, left col, ¶ 4 (“The implementation of the high-current magnetron
`
`discharge (regime 2) in sputtering … plasma density (exceeding 2x1013 cm-3).”)
`
`(Ex. 1003).
`
`- 22 -
`
`
`
`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
`
`55. Mozgrin generates a strongly-ionized plasma in both regions 2 and 3.
`
`The density in those regions matches the exemplary density given for a strongly-
`
`ionized plasma in the ‘716 Patent. ‘716 Patent at claim 24 (“wherein the peak
`
`plasma density of the strongly-ionized plasma is greater than about 1012 cm˗3”) (Ex.
`
`1001).
`
`b)
`“means for ionizing…”: Function
`56. As explained above in section V.C, the claimed function of the
`
`“means for ionizing…” is: “ionizing a feed gas in a chamber to form a weakly-
`
`ionized plasma that substantially eliminates the probability of developing an
`
`electrical breakdown condition in the chamber.”
`
`(1)
`“ionizing a feed gas in a chamber to form a
`weakly-ionized plasma”
`
`57. The ‘716 Patent uses the terms “weakly-ionized plasma” and “pre-
`
`ionized plasma” synonymously. ‘716 Patent at 5:14-15 (“The weakly-ionized
`
`plasma 232 is also referred to as a pre-ionized plasma.”) (Ex. 1001). Mozgrin’s
`
`power supply (shown in Fig. 2) generates a pre-ionized plasma in Mozgrin’s region
`
`1. Mozgrin at 402, right col, ¶2 (“Figure 3 shows typical voltage and current
`
`
`8 Mozgrin at 409, left col, ¶5 (“The high-current diffuse discharge (regime 3) is
`
`useful for producing large-volume uniform dense plasmas ni 1.5x1015cm-3…”).
`
`(Ex. 1003).
`
`- 23 -
`
`
`
`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
`
`oscillograms.… Part I in the voltage oscillogram represents the voltage of the
`
`stationary discharge (pre-ionization stage).”) (Ex. 1003).
`
`58. Moreover, the density of Mozgrin’s pre-ionized plasma matches the
`
`exemplary density for weakly-ionized plasma given in the ‘716 Patent. ‘716 Patent
`
`at claim 23 (“wherein a peak plasma density of the weakly-ionized plasma is less
`
`than about 1012 cm˗3”) (Ex. 1001); Mozgrin at 401, right col, ¶2 (“[f]or pre-
`
`ionization, we used a stationary magnetron discharge; … provided the initial
`
`plasma density in the 109 – 1011 cm˗3 range.”) (Ex. 1003).
`
`59. Mozgrin also teaches generating its plasma from feed gasses such as
`
`Argon and Nitrogen. Mozgrin at 400, right col, ¶ 3 (“We investigated the
`
`discharge regimes in various gas mixtures at 10-3 – 10 torr…”); 402, ¶ spanning
`
`left and right cols (“We studied the high-current discharge in wide ranges of
`
`discharge current…and operating pressure…using various gases (Ar, N2, SF6, and
`
`H2) or their mixtures of various composition…”) (Ex. 1003).
`
`60. Finally, Mozgrin’s weakly-ionized plasma was generated between the
`
`anode and cathode, both of which reside within a chamber. For example, Mozgrin
`
`states “[t]he gas from the discharge volume was pumped out; minimal residual gas
`
`pressure was about 8 x 10-6 torr.” Mozgrin at 401, left col, ¶ 3 (Ex. 1003). That is,
`
`- 24 -
`
`
`
`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
`
`Mozgrin pumped the gas out to achieve a desired base pressure within the
`
`chamber. See also Mozgrin at Figs. 1 and 6 (Ex. 1003).
`
`(2)
`“that substantially eliminates the probability of
`developing an electrical breakdown condition in the
`chamber”
`
`61. Mozgrin states “pre-ionization was not necessary; however, in this
`
`case, the probability of discharge transferring to arc mode increased.” Mozgrin at
`
`406, right col, ¶3 (Ex. 1003). Thus, Mozgrin teaches that failing to make the
`
`weakly-ionized plasma increases the probability of arcing and that creation of the
`
`weakly-ionized plasma (Mozgrin’s region 1) reduces “the probability of
`
`developing an electrical breakdown condition proximate to the cathode.”
`
`(b) The Patent Owner mischaracterized Mozgrin
`during prosecution of the related U.S. Pat. No.
`7,147,759
`
`62. The ‘716 Patent (Ex. 1001) and the ’759 Patent (Ex. 1018) name the
`
`same inventor and are owned by a common assignee. Both patents are asserted in
`
`related litigation. I understand that during prosecution of the ‘759 Patent, the
`
`Patent Owner argued that Mozgrin does not teach “without forming an arc.” See
`
`05/02/06 Resp. of ‘759 Patent file history at 2, 5, 7 and 13-16 (Ex. 1019).
`
`However, the Patent Owner was wrong. Mozgrin does teach “without forming an
`
`arc” as required by the ‘759 Patent as well as “substantially eliminat[ing] the
`
`- 25 -
`
`
`
`Kortshagen Declaration
`‘716 Patent, Claims 1-11 and 33
`
`probability of developing an electrical breakdown condition in the chamber” as
`
`required by the ‘716 Patent.
`
`63. As shown in Mozgrin’s Fig. 7, if voltage is steadily applied, and
`
`current is allowed to grow, the plasma will eventually transition to the arc
`
`discharge region (Mozgrin’s region 4). However, if the current is limited, the
`
`plasma will remain in the arc-free regions 2 (sputtering)