EXHIBIT G.04
`
`U.S. Patent No. 7,808,184
`
`References cited herein:
`
`o U.S. Patent No. 7,808,184 C“ 184 Patent”)
`
`Dischar e in a
`-Current Low-Pressure uasi-Station
`0 D.V. Mozgrin, et al, Hi
`Magnetic Field: Experimental Research, Plasma Physics Reports, Vol. 21, No. 5, 1995
`(“Mozgrin”)
`
`0 D.V. Mozgrin, High-Current Low-Pressure Quasi-Stationary Discharge in a Magnetic
`Field: Experimental Research, Thesis at Moscow Engineering Physics Institute, 1994
`(“Mozgrin Thesis”)
`
`- U.S. Pat. No. 6,413,382 (“Wang”)
`
`0 A. A. Kudryavtsev, et al, Ionization relaxation in a plasma produced by a pulsed inert-gas
`discharge, Sov. Phys. Tech. Phys. 28(1), January 1983 (“Kudryavtsev”)
`
`0 Leipold et al., High-electron densig, atmospheric pressure air glow discharges, Power
`Modulator Symposium, 2002 and 2002 High-Voltage Workshop. Conference Record of
`the Twenty-Fifth International, June 2002 (“Leipold”)
`
`0 Dennis M. Manos & Daniel L. Flamm, Plasma Etching: An Introduction, Academic Press
`1989 (“Manos”)
`
`0 Gudmundsson et al., Evolution of the electron energy distribution and plasma parameters
`in a pulsed magnetron discharge, Applied Physics Letters, 78(22) May 2001
`(“Gudmundsson”)
`
`1. A method of
`generating a
`strongly-ionized
`plasma, the
`method
`comprising:
`
`1-in Thesis and further in View of Wan
`'
`'
`'
`_
`The combination of Mozgrin with Mozgrin Thesis discloses a method of
`generating a strongly-ionized plasma.
`
`‘ 184 Patent at 7: 14-17 (“[S]trongly-ionized plasmas are generally plasmas
`having plasma densities that are greater than about 1012-1013 cm'3.”)
`
`Mozgrin at 401, right col, 112 (“For pre-ionization
`density in the 109 — 10“ cm'3 range.”)
`
`the initial plasma
`
`Mozgrin at 409, left col, 1] 4 (“The implementation of the high-current
`magnetron discharge (regime 2) in sputtering
`plasma density (exceeding
`2x10” cm'3).”).
`
`Mozgrin at 409, left col, 115 (“The high-current diffuse discharge (regime 3)
`
`is useful for producing large-Volume uniform dense plasmas I1,-E
`l.5xl015cm'3...” .
`
`ActiveUS l22249350v.l
`
`INTEL 1022
`
`INTEL 1022
`
`

`
`EXHIBIT G.04
`
`U.S. Patent No. 7,808,184
`
`Claims 3 and 13
`
`gas proximate to
`an anode and a
`
`cathode assembly;
`and
`
`gas proximate to an anode and a cathode assembly.
`
`rin Thesis and further in view of Wan
`
`Mozgrin at Fig. l
`
`Fig. 1. Discharge device configurations: (a) planar magne-
`tron;
`(h)
`shaped-electrode: configuration.
`(1) Cathode;
`(2) anode; (3) magnetic system.
`
`Mozgrin at 401, left col, 1] 4 (“. . .the discharge gap which was filled up with
`either neutral or pre-ionized gas.”).
`
`Mozgrin at 400, right col, 1] 3 (“We investigated the discharge regimes in
`Various gas mixtures at 103 — 10 torr. . .”).
`
`Mozgrin at 402, 1] sparming left and right cols (“We studied the high-current
`discharge in wide ranges of discharge current. . .and operating
`pressure. . .using Various gases (Ar, N2, SF6, and H2) or their mixtures of
`Various composition. . .”).
`
`Mozgrin at 401, left col, 1] 1 (“The [plasma] discharge. . .was adjacent to the
`cathode.”)
`
`See also Moz '
`
`. .
`
`The combination of Mozgrin with Mozgrin Thesis discloses supplying feed
`gas proximate to an anode and a cathode assembly.
`
`Mozgrin at Fig. l
`
`a) supplying feed
`gas proximate to
`an anode and a
`
`cathode assembly;
`and
`
`ActiVeUS l22249350V.l
`
`

`
`EXHIBIT G.04
`
`U.S. Patent No. 7,808,184
`
`Claims 3 and 13
`
`Mozgrin in view of the Mozgrin Thesis and further in view of Wan
`
`H1’)
`
`E
`
`1*
`
`3;
`
`I
`
`; B
`
`2
`
`I
`
`,1 —'
`
`Fig. 1. Discharge dcvicc configurations: (a) planar magne-
`tron;
`(b)
`shaped-clcctrodc configuration.
`(1) Cathode;
`(2) anode; (3) magnetic system.
`
`Mozgrin at 401, left col, 1] 4 (“. . .the discharge gap which was filled up with
`either neutral or pre-ionized gas.”).
`
`Mozgrin at 400, right col, 1] 3 (“We investigated the discharge regimes in
`Various gas mixtures at 10'3 — 10 torr. . .”).
`
`Mozgrin at 402, 1] sparming left and right cols (“We studied the high-current
`discharge in wide ranges of discharge current. . .and operating
`pressure. . .using Various gases (Ar, N2, SF6, and H2) or their mixtures of
`Various composition. . .”).
`
`Mozgrin at 401, left col, 1] 1 (“The [plasma] discharge. . .was adjacent to the
`cathode.”)
`
`See also Moz rin at Fi ~.
`
`.
`
`The combination of Mozgrin with the Mozgrin Thesis discloses generating a
`Voltage pulse between the anode and the cathode assembly.
`
`Mozgrin at Fig. 3:
`
`(b)
`
`b) generating a
`Voltage pulse
`between the
`
`anode and the
`
`cathode assembly,
`
`ActiVeUS l22249350V.l
`
`

`
`EXHIBIT G.04
`
`U.S. Patent No. 7,808,184
`
`Claims 3 and 13
`
`_
`
`1-in Thesis and further in View of Wan
`
`Mozgrin at 402, Fig. 3 caption (“Fig. 3. Oscillograms of (a) current and (b)
`voltage. . .”).
`
`Mozgrin at 401, left col, 1] 4 (“It was possible to form the high-current
`quasi-stationary regime by applying a square voltage pulse to the discharge
`which was filled u n with either neutral or re-ionized
`
`The combination of Mozgrin with the Mozgrin Thesis discloses the voltage
`pulse having at least one of a controlled amplitude and a controlled rise
`time.
`
`Mozgrin at Fig. 3:
`
`(b)
`
`the voltage pulse
`having at least
`one of a
`
`controlled
`
`amplitude and a
`controlled rise
`
`time
`
`Mozgrin at 401, right col, 1] 1 (“[t]he power supply was able to deliver
`square voltage and current pulses with [rise] times (leading edge) of 5 — 60
`HS --
`
`Mozgrin at 406, right col, 1] 2 (“Table 1 presents parameter ranges
`corresponding to regime 2.”).
`
`that increases an
`
`ionization rate so
`
`that a rapid
`increase in
`
`electron density
`and a formation of
`
`a strongly-ionized
`plasma occurs
`
`Mozrin at 406, Table l.
`
`The combination of Mozgrin with the Mozgrin Thesis discloses [at least one
`of a controlled amplitude and a controlled rise time] that increases an
`ionization rate so that a rapid increase in electron density and a formation of
`a strongly-ionized plasma occurs without forming an arc between the anode
`and the cathode assembly.
`
`‘ 184 Patent at 14:18-20 (“The duration of the transient stage 340 is about 40
`usec, but can have a duration that is in the range of about 10 usec to 5,000
`usec.”).
`
`‘ 184 Patent at 14:23-40 (“The transient stage 340 of the voltage pulse 302’
`has a rise time that shifts the electron energy distribution in the weakly-
`ionized lasma to hi her ener ies thereb causin; a raid increase in the
`
`ActiveUS l22249350v.l
`
`

`
`EXHIBIT G.04
`
`U.S. Patent No. 7,808,184
`
`Claims 3 and 13
`
`_
`
`1-in Thesis and further in View of Wan
`
`ionization rate by driving the weakly-ionized plasma into a transient non-
`steady state... A high-power stage 350
`is sufficient to more rapidly
`create a strongly-ionized plasma. . .”).
`
`Mozgrin at 401, right col, 1]2 (“For pre-ionization
`density in the 109 — 10“ cm'3 range.”).
`
`the initial plasma
`
`Mozgrin at 409, left col, 1] 4 (“The implementation of the high-current
`magnetron discharge (regime 2) in sputtering
`plasma density (exceeding
`2x10” cm'3).”).
`
`Mozgrin at 409, left col, 1]5 (“The high-current diffuse discharge (regime 3)
`
`is useful for producing large-volume uniform dense plasmas I1,-E
`l.5xl015cm'3. . .”).
`
`Mozgrin at 401, 1] sparming left and right columns (“The frequency
`parameters of the pulsed supply unit were chosen... Designing the [pulsed
`supply] unit, we took into account the dependencies which had been
`obtained in [Kudryavtsev] of ionization relaxation on pre-ionization
`parameters, pressure, and pulse voltage amplitude.”).
`
`Mozgrin at 402, Fig. 3 and Fig. caption.
`
`Mozgrin Thesis at 63, Fig. 3.2 and Fig. caption.
`
`It would have been obvious for one of ordinary skill to combine Mozgrin
`with the Mozgrin Thesis. Both Mozgrin and the Mozgrin Thesis are written
`by the same author, address similar subject matter, and describe the same
`research. The Mozgrin Thesis merely provides additional detail for the
`material already disclosed in Mozgrin. Thus, a person of ordinary skill
`would have combined the Mozgrin Thesis with Mozgrin to add additional
`details not resent in Moz; '
`
`The combination of Mozgrin with Mozgrin Thesis discloses without
`forming an arc between the anode and the cathode assembly.
`
`without forming
`an arc between
`
`the anode and the
`
`cathode assembly.
`
`Mozgrin at Fig. 7.
`
`Mozgrin at 400, left col, 1] 3 (“Some experiments on magnetron systems of
`various geometry showed that discharge regimes which do not transit to arcs
`can be obtained even at high currents.”) (emphasis added).
`
`Mozgrin at 400, right col, 1] l (“A further increase in the discharge currents
`caused the discharges to transit to the arc regimes. . .”).
`
`arameters of the shaed-electrode
`
`ActiVeUS 1222493 50V. 1
`
`

`
`EXHIBIT G.04
`
`U.S. Patent No. 7,808,184
`
`Claims 3 and 13
`
`_
`
`rin Thesis and further in view of Wan
`
`discharge transit to regime 3, as well as the condition of its transit to arc
`regime 4, could be well determined for every given set of the discharge
`parameters”).
`
`Mozgrin at 406, right col. 1] 3 (“Moreover, pre-ionization was not necessary;
`however, in this case, the probability of discharge transferring to the arc
`mode increased.”).
`
`Mozgrin at 403, left col, 1] 2 (“Then, we studied regimes 2 and 3 separately
`to determine the boundary parameters of their occurrence, such as current,
`voltage. . .”).
`
`Mozgrin at 400, right col, 1] 1 (“A further increase in the discharge currents
`caused the discharges to transit to the arc regimes. . .”).
`
`Mozgrin at 404, left col, 1] 4 (“If the current was raised above 1.8 kA or the
`pulse duration was increase to 2 — 10 ms, an instability development and
`discharge contraction was observed.”).
`
`Mozgrin at Figs. 4 and 7.
`
`Background.‘
`Manos at 231 “arcs. . .are a
`
`The combination of Mozgrin with Mozgrin Thesis discloses applying a
`magnetic field proximate to the cathode assembly.
`
`See evidence cited for claim 1.
`
`Mozgrin at Fig. 1:
`an
`
`.;
`
`E
`
`C
`
`E
`
`9"
`~
`
`I
`
`I
`
`I
`
`2. The method of
`
`claim 1 further
`
`comprising
`applying a
`magnetic field
`proximate to the
`cathode assembly.
`
`ActiveUS l22249350v.l
`
`

`
`EXHIBIT G.04
`
`U.S. Patent No. 7,808,184
`
`Claims 3 and 13
`
`Mozgrin in View of the Mozgrin Thesis and further in View of Wan
`
`Fig. 1. Discharge (lCVICC configurations: (a) planar magne-
`tron‘.
`(b)
`shaped-electrode
`configuration.
`(I) Cathode;
`(2) anode; (3) nlagnclic system
`
`Mozgrin at 401, left col, 1} 1 (“The electrodes were immersed in a magnetic
`field of armular errnanent ma nets.” .
`
`The combination of Mozgrin, the Mozgrin Thesis, and Wang discloses
`moving the magnetic field.
`
`See evidence cited for claim 2.
`
`Wang at Title (“Pulsed sputtering with a small rotating magnetron.”).
`
`Wang at 4:45-46 (“The magnetron 40 is rotated about a central axis 52 by a
`motor shaft 54 and attached motor 56.”).
`
`One of ordinary skill would have been motivated to combine the teachings
`of Wang with Mozgrin and the Mozgrin Thesis. First, Both Mozgrin and
`the Mozgrin Thesis are written by the same author, address similar subject
`matter, and describe the same research. The Mozgrin Thesis merely
`provides additional detail for the material already disclosed in Mozgrin such
`as that shown in Fig. 3.2. Moreover, Mozgrin, Mozgrin Thesis and Wang
`all relate to pulsed plasma systems for sputtering. See Mozgrin at 409, left
`col, 1] 4 (“The implementation of the high-current magnetron discharge
`(regime 2) in sputtering or layer-deposition technologies provides an
`enhancement in the flux of deposited materials and plasma density. . .”); see
`also Wang at Title (“Pulsed sputtering with a small rotating magnetron”).
`Hence, Mozgrin and Wang relate to similar technology and one of ordinary
`skill would have been motivated to use Wang’s rotating magnetron in
`Mozgrin and/or Mozgrin Thesis to fiirther improve uniform target erosion.
`
`Moreover, a combination of Wang‘s rotating magnetic field with Mozgrin
`and Moz rin Thesis would be a combination of known elements in which
`
`3. The method of
`
`claim 2 further
`
`comprising
`moving the
`magnetic field.
`
`ActiveUS l22249350v.l
`
`

`
`EXHIBIT G.04
`
`U.S. Patent No. 7,808,184
`
`Claims 3 and 13
`
`_
`
`'
`
`'
`
`'
`
`1-in Thesis and further in View of Wan
`
`The combination of Mozgrin with the Mozgrin Thesis discloses a method of
`generating a strongly-ionized plasma.
`
`See evidence cited in claim 1 preamble.
`
`The combination of Mozgrin with the Mozgrin Thesis discloses supplying
`feed gas proximate to an anode and a cathode assembly.
`
`See evidence cited in claim 1(a).
`
`The combination of Mozgrin with the Mozgrin Thesis discloses generating a
`voltage pulse between the anode and the cathode assembly, the voltage
`pulse having at least one of a controlled amplitude and a controlled rise time
`that shifts an electron energy distribution in the plasma to higher energies
`that increase an ionization rate so as to result in a rapid increase in electron
`density and a formation of a strongly-ionized plasma without forming an arc
`between the anode and the cathode assembly.
`
`See evidence cited in claim l(b).
`
`One of ordinary skill would have readily understood that the electron energy
`distribution shifts to higher energies in Mozgrin, because Mozgrin applies
`voltage pulses in a magnetron sputtering chamber.
`
`Background.‘
`Leipold at Abstract (“Application of a high voltage pulse causes a shift in
`the electron energy distribution function to higher energies. This causes a
`temporary increase of the ionization rate and consequently an increase of
`the electron density.”)
`
`Gudmundsson at Title (“[e]volution of the electron energy distribution
`a pulsed magnetron discharge.”).
`
`in
`
`Gudmundsson at 3427, right col, 1] 2 (“For the measurements presented
`here, the average power was 300 W, pulse width 100 us, and repetition
`frequency 50 Hz. The peak voltage was roughly 800 V. . ..”)
`
`Gudmundsson at 3428, left col, 1] 2 (“Figure 1 [of Gudmundsson] shows the
`evolution of the electron energy distribution fiJIlC1ZiOIl with time fiom
`initiating the pulse.”).
`
`Gudmundsson at 3429, right col, 1] 1 (“The average electron energy peaks at
`3.5 eV rou hl 100 s after initiatin; the ulse. This eak in the avera
`
`1 1. A method of
`
`generating a
`strongly-ionized
`plasma, the
`method
`
`corn 0 risin ; :
`
`a) supplying feed
`gas proximate to
`an anode and a
`
`cathode assembly;
`and
`
`b) generating a
`voltage pulse
`between the
`
`anode and the
`
`cathode assembly,
`the voltage pulse
`having at least
`one of a
`
`controlled
`
`amplitude and a
`controlled rise
`
`time that shifts an
`
`electron energy
`distribution in the
`
`plasma to higher
`energies that
`increase an
`
`ionization rate so
`
`as to result in a
`
`rapid increase in
`electron density
`and a formation of
`
`a strongly-ionized
`plasma without
`forming an arc
`between the
`
`anode and the
`
`cathode assembly.
`
`ActiVeUS 1222493 50V. 1
`
`

`
`EXHIBIT G.04
`
`U.S. Patent No. 7,808,184
`
`
`
`Claims 3 and 13
`
`rin Thesis and further in view of Wan
`
`
`
`energy coincides with the presence of the high energy group of electrons
`apparent in the electron energy distribution”)
`
`Gudmundsson at Figs. 1 and 2:
`
`
`
`
`
`Nu1'malizt-dEEDF
`
`
`
`.\1oI'InalizedEEDF
`
`
`
`NurmalizeilEEDF
`
`6
`
`1
`
`5 [eV]
`
` 5
`
`FIG. 1. Normalized EEDF measured (a) d11ri11g pulses 60. 80. and 100 ,us
`
`after initiating the pulse: (1)! around the electron density niaxiinuni 105. 110.
`and 130 ,us after initiating the pulse; and (C) 250. 350. and 450 us after
`initiating the pulse. Pulse length. 100 us: average power. 300 W: and pres-
`s1u'e 2 n1Torr.
`
`
`
`ActiVeUS l22249350V.l
`
`

`
`EXHIBIT G.04
`
`U.S. Patent No. 7,808,184
`
`Claims 3 and 13
`
`Mozgrin in view of the Mozgrin Thesis and further in view of Wan
`
`100
`
`200
`
`300
`
`400
`
`> E-ZLwG1
`
`0
`
`100
`
`200
`
`300
`
`400
`
`500
`
`:;zs]
`f
`and Icl
`-by average elcctmn nmgy.
`lab Electron denssry.
`no 2.
`+ floaung potential ra.
`- plasma pmenuan rm, and - pocenuai mremxe
`rrw 1',» as a funcuon ofnme fimn initiation ofthc pulse. Target current
`pulse length. 100 ps. average power. 500 w. and pressure. 1 mTon.
`
`Gudmundsson’s teaching that applying a voltage pulse that raises the
`density of a plasma also “shifts an electron energy distribution in the plasma
`to higher energies” is part of the background knowledge that one of ordinary
`skill would have in mind while readin;
`'
`.
`
`See evidence cited for claim 1 1.
`
`12. The method of The combination of Mozgrin with the Mozgrin Thesis discloses applying a
`claim 11 further
`magnetic field proximate to the cathode assembly.
`comprising
`applying a
`magnetic field
`proximate to the
`cathode assembl
`
`See evidence cited in claim 2.
`
`.
`
`13. The method of The combination of Mozgrin, the Mozgrin Thesis, and Wang discloses
`claim 12 further
`moving the magnetic field.
`comprising
`movin; the
`
`See evidence cited for claim 12.
`
`ActiveUS 122249350v.l
`
`

`
`Claims 3 and 13
`
`'
`
`'
`
`EXHIBIT G.04
`
`U.S. Patent No. 7,808,184
`
`'
`
`rin Thesis and further in View of Wan magnetic field.
`
`See evidence cited in claim 3.
`
`ActiVeUS 1222493 50V. 1
`
`11