EXHIBIT A.08
`U.S. Patent No. 7,147,759
`
`
`References cited herein:
`
`(cid:120) U.S. Patent No. 7,147,759 (“‘759 Patent”)
`
`(cid:120) U.S. Pat. No. 6,413,382 (“Wang”)
`
`(cid:120) A. A. Kudryavtsev, et al, Ionization relaxation in a plasma produced by a pulsed inert-gas
`discharge, Sov. Phys. Tech. Phys. 28(1), January 1983 (“Kudryavtsev”)
`
`(cid:120) Li et al, Low-temperature magnetron sputter-deposition, hardness, and electrical
`resistivity of amorphous and crystalline alumina thin films, J. Vac. Sci. Technol. A 18(5),
`2000 (“Li”)
`
`Claims 11, 35
`
`[1pre.] A
`magnetically
`enhanced sputtering
`source comprising:
`
`Wang in view of Kudryavtsev and Li
`
`The combination of Wang with Kudryavtsev discloses a magnetically
`enhanced sputtering source.
`
`Wang at Title (“Pulsed sputtering with a small rotating magnetron.”).
`
`[1a.] an anode;
`
`The combination of Wang with Kudryavtsev discloses an anode.
`
`‘759 Patent at Fig. 1
`
`
`‘759 Patent at Fig. 1 (“FIG. 1 illustrates a cross-sectional view of a
`known magnetron sputtering apparatus having a pulsed power source.”)
`
`‘759 Patent at 3:40-41 (“an anode 130 is positioned in the vacuum
`chamber 104 proximate to the cathode assembly.”)
`
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`
`EXHIBIT A.08
`U.S. Patent No. 7,147,759
`
`
`
`Claims 11, 35
`
`Wang at Fig. 1
`
`Wang in view of Kudryavtsev and Li
`
`Wang at 3:66-4:1 (“A grounded shield 24 protects the chamber walls
`from sputter deposition and also acts as a grounded anode for the
`cathode of the negatively biased target 14.”)
`
`The combination of Wang with Kudryavtsev discloses a cathode
`assembly that is positioned adjacent to the anode, the cathode assembly
`including a sputtering target.
`
`‘759 Patent at Fig. 1
`
`[1b.] a cathode
`assembly that is
`positioned adjacent
`to the anode, the
`cathode assembly
`including a
`sputtering target;
`
`
`‘759 Patent at Fig. 1 (“FIG. 1 illustrates a cross-sectional view of a
`known magnetron sputtering apparatus having a pulsed power source.”)
`
`‘759 Patent at 3:40-41 (“an anode 130 is positioned in the vacuum
`chamber 104 proximate to the cathode assembly.”)
`
`Wang at Fig. 1
`
`Wang at 3:66-4:1 (“A grounded shield 24 protects the chamber walls
`from sputter deposition and also acts as a grounded anode for the
`cathode of the negatively biased target 14.”)
`
`The combination of Wang with Kudryavtsev discloses an ionization
`source that generates a weakly-ionized plasma proximate to the anode
`and the cathode assembly.
`
`2
`
`[1c.] an ionization
`source that
`generates a weakly-
`ionized plasma
`
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`
`Claims 11, 35
`
`proximate to the
`anode and the
`cathode assembly;
`
`[1d.] a magnet that
`is positioned to
`generate a magnetic
`field proximate to
`the weakly-ionized
`plasma, the
`magnetic field
`substantially
`trapping electrons in
`the weakly-ionized
`plasma proximate to
`the sputtering target;
`and
`
`EXHIBIT A.08
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Li
`
`Wang at Fig. 1.
`
`Wang at 7:17-31 (“The background power level PB is chosen to exceed
`the minimum power necessary to support a plasma... [T]he application
`of the high peak power PP quickly causes the already existing plasma to
`spread and increases the density of the plasma.”)
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at least 10 times the
`background power PB … and most preferably 1000 times to achieve the
`greatest effect of the invention. A background power PB of 1 kW
`[causes] little if any actual sputter deposition.”)
`
`Wang at 4:23-31 (“A small rotatable magnetron 40 is thus creating a
`region 42 of a high-density plasma (HDP)…”)
`
`Wang at 7:47-49 (“The initial plasma ignition needs to be performed
`only once and at much lower power levels so that particulates produced
`by arcing are much reduced.”).
`
`The combination of Wang with Kudryavtsev discloses a magnet that is
`positioned to generate a magnetic field proximate to the weakly-ionized
`plasma, the magnetic field substantially trapping electrons in the
`weakly-ionized plasma proximate to the sputtering target.
`
`‘759 Patent at 3:10-12 (“FIG. 1 shows a cross-sectional view of a
`known magnetron sputtering apparatus 100…” that has a magnet 126.”)
`
`‘759 Patent at 4:4-10 [describing the prior art Fig. 1] (“The electrons,
`which cause ionization, are generally confined by the magnetic fields
`produced by the magnet 126. The magnetic confinement is strongest in
`a confinement region 142….”)
`
`Wang at Fig. 1.
`
`Wang at 4:23-27 (“A small rotatable magnetron 40 is disposed in the
`back of the target 14 to create a magnetic field near the face of the
`target 14 which traps electrons from the plasma to increase the electron
`density.”)
`
`[1e.] a power supply
`generating a voltage
`pulse that produces
`an electric field
`between the cathode
`
`The combination of Wang with Kudryavtsev discloses a power supply
`generating a voltage pulse that produces an electric field between the
`cathode assembly and the anode, the power supply being configured to
`generate the voltage pulse with an amplitude and a rise time that
`increases an excitation rate of ground state atoms that are present in the
`
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`EXHIBIT A.08
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Li
`
`weakly-ionized plasma to create a multi-step ionization process that
`generates a strongly-ionized plasma, which comprises ions that sputter
`target material, from the weakly-ionized plasma, the multi-step
`ionization process comprising exciting the ground state atoms to
`generate excited atoms, and then ionizing the excited atoms within the
`weakly-ionized plasma without forming an arc discharge.
`
`‘759 Patent at Fig. 5
`
`Wang at Figs. 6, 7.
`
`Wang at 7:61-62 (“The pulsed DC power supply 80 produces a train of
`negative voltage pulses.”).
`
`Wang at 5:23-27 (“[The pulse’s] exact shape depends on the design of
`the pulsed DC power supply 80, and significant rise times and fall
`times are expected.”).
`
`Wang at 4:29-31 (“increases the sputtering rate...”).
`
`Wang at 7:19-25 (“Preferably, the peak power level PP is at least 10
`times the background power level PB, … most preferably 1000 times to
`achieve the greatest effects of the invention. A background power PB
`of 1 kW will typically be sufficient…”)
`
`Wang at 7:31-39 (“The SIP reactor is advantageous for a low-power,
`low-pressure background period since the small rotating SIP magnetron
`can maintain a plasma at a lower power and lower pressure than can a
`larger stationary magnetron. However, it is possible to combine highly
`ionized sputtering during the pulses With significant neutral sputtering
`
`
`
`Claims 11, 35
`
`assembly and the
`anode, the power
`supply being
`configured to
`generate the voltage
`pulse with an
`amplitude and a rise
`time that increases
`an excitation rate of
`ground state atoms
`that are present in
`the weakly-ionized
`plasma to create a
`multi-step ionization
`process that
`generates a strongly-
`ionized plasma,
`which comprises
`ions that sputter
`target material, from
`the weakly-ionized
`plasma, the multi-
`step ionization
`process comprising
`exciting the ground
`state atoms to
`generate excited
`atoms, and then
`ionizing the excited
`atoms within the
`weakly-ionized
`plasma without
`forming an arc
`discharge.
`
`
`
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`EXHIBIT A.08
`U.S. Patent No. 7,147,759
`
`
`
`Claims 11, 35
`
`Wang in view of Kudryavtsev and Li
`
`during the back ground period.”).
`
`Wang at 7:3-6 (“Plasma ignition, particularly in plasma sputter
`reactors, has a tendency to generate particles during the initial arcing,
`which may dislodge large particles from the target or chamber.”)
`
`Wang at 7:47-49 (“The initial plasma ignition needs be performed only
`once and at much lower power levels so that particulates produced by
`arcing are much reduced.”).
`
`Wang at 7:13-28 (“Accordingly, it is advantageous to use a target
`power waveform illustrated in FIG. 6… As a result, once the plasma
`has been ignited at the beginning of sputtering prior to the illustrated
`waveform…”).
`
`Kudryavtsev at 34, right col, ¶ 4 (“Since the effects studied in this work
`are characteristic of ionization whenever a field is suddenly applied to a
`weakly ionized gas, they must be allowed for when studying emission
`mechanisms in pulsed gas lasers, gas breakdown, laser sparks, etc.”)
`
`Kudryavtsev at Fig. 1
`
`Kudryavtsev at Fig. 6
`
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`EXHIBIT A.08
`U.S. Patent No. 7,147,759
`
`
`
`Claims 11, 35
`
`Wang in view of Kudryavtsev and Li
`
`Kudryavtsev at 31, right col, ¶ 7 (“The behavior of the increase in ne
`with time thus enables us to arbitrarily divide the ionization process
`into two stages, which we will call the slow and fast growth stages.
`Fig. 1 illustrates the relationships between the main electron currents in
`terms of the atomic energy levels during the slow and fast stages.”).
`
`Kudryavtsev at 31, right col, ¶ 6 (“For nearly stationary n2 [excited
`atom density] values … there is an explosive increase in ne [plasma
`density]. The subsequent increase in ne then reaches its maximum
`value, equal to the rate of excitation [equation omitted], which is
`several orders of magnitude greater than the ionization rate during the
`initial stage.”)
`
`Kudryavtsev at Abstract (“[I]n a pulsed inert-gas discharge plasma at
`moderate pressures… [i]t is shown that the electron density increases
`explosively in time due to accumulation of atoms in the lowest excited
`states.”)
`
`If one of ordinary skill, applying Wang’s power levels did not
`experience Kudryavtsev’s “explosive increase” in plasma density, it
`would have been obvious to adjust the operating parameters, e.g.,
`increase the pulse length and/or pressure, so as to trigger Kudryavtsev’s
`fast stage of ionization. One of ordinary skill would have been
`motivated to use Kudryavtsev’s fast stage of ionization in Wang so as
`to increase plasma density and thereby increase the sputtering rate.
`Further, use of Kudryavtsev’s fast stage in Wang would have been a
`
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`EXHIBIT A.08
`U.S. Patent No. 7,147,759
`
`
`
`Claims 11, 35
`
`Wang in view of Kudryavtsev and Li
`
`combination of old elements that yielded predictable results of
`increasing plasma density and multi-step ionization.
`
`Kudryavtsev states, “[s]ince the effects studied in this work are
`characteristic of ionization whenever a field is suddenly applied to a
`weakly ionized gas, they must be allowed for when studying emission
`mechanisms in pulsed gas lasers, gas breakdown, laser sparks, etc.”
`Kudryavtsev at 34, right col, ¶ 4 (Ex. 1004). Because Wang applies
`voltage pulses that “suddenly generate an electric field,” one of
`ordinary skill reading Wang would have been motivated to consider
`Kudryavtsev and to use Kudryavtsev’s fast stage in Wang.
`
`The combination of Wang with Kudryavtsev discloses a substrate
`support that is positioned in a path of the sputtering flux.
`
`See evidence cited in claim 1.
`
`‘759 Patent at 3:10-12 (“FIG. 1 shows a cross-sectional view of a
`known magnetron sputtering apparatus 100…”)
`
`‘759 Patent at 3:44-46 (“substrate 134 is positioned in the vacuum
`chamber 104 on a substrate support 135 to receive the sputtered target
`material 116.”)
`
`Wang at Fig. 1
`
`Wang at 3:63-66 (“pedestal electrode 18 [that] supports a wafer 20 to
`be sputter coated in planar opposition to the target 14 across a
`processing region 22.”).
`
`The combination of Wang, Kudryavtsev and Li discloses a temperature
`controller that controls the temperature of the substrate support.
`
`See evidence cited in claim 10.
`
`Li at Abstract (“The influence of substrate temperature, substrate bias,
`and the magnetic trap on film growth and properties was studied by
`different surface and thin-film analysis techniques and electrical
`measurements.”)
`
`Li at 2334, left col, ¶ 1 (“Substrate temperatures were maintained at or
`below 300°C, as measured by a thermocouple attached to the substrate
`holder.”)
`
`10. The sputtering
`source of claim 1
`further comprising a
`substrate support
`that is positioned in
`a path of the
`sputtering flux.
`
`11. The sputtering
`source of claim 10
`further comprising a
`temperature
`controller that
`controls the
`temperature of the
`substrate support.
`
`
`
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`
`EXHIBIT A.08
`U.S. Patent No. 7,147,759
`
`
`
`Claims 11, 35
`
`Wang in view of Kudryavtsev and Li
`
`[20pre.] A method
`of generating
`sputtering flux, the
`method comprising:
`
`[20a.] ionizing a
`feed gas to generate
`a weakly-ionized
`plasma proximate to
`a sputtering target;
`
`Li at 2334, right col, ¶ 2 (“[D]eposited three films at the same nominal
`power (100 W), pulsed substrate bias (-300V) but with different
`substrate temperatures, viz., 200, 250, and 300 °C.”).
`
`Li at 2334, right col, ¶ 2 (“[F]ilm grown at 200 °C is amorphous.”).
`
`Li at 2334, right col, ¶ 4 (“Crystalline films grow[] at (cid:148)250 °C.”).
`
`One of ordinary skill would have been motivated to use Li’s
`temperature controller in Wang to control the crystallization of the film
`formed on the substrate
`
`The combination of Wang and Kudryavtsev discloses a method of
`generating sputtering flux.
`
`Wang at Title (“Pulsed sputtering with a small rotating magnetron.”).
`
`The combination of Wang and Kudryavtsev discloses ionizing a feed
`gas to generate a weakly-ionized plasma proximate to a sputtering
`target.
`
`Wang at Fig. 1
`
`Wang at 4:5-6 (“A sputter working gas such as argon is supplied from a
`gas source 32….”).
`
`Wang at 4:20-21 (“… a reactive gas, for example nitrogen is supplied
`to the processing space 22….”).
`
`Wang at 7:17-31 (“The background power level PB is chosen to exceed
`the minimum power necessary to support a plasma... [T]he application
`of the high peak power PP quickly causes the already existing plasma to
`spread and increases the density of the plasma.”)
`
`Wang at 7:19-25 (“Preferably, the peak power PP is at least 10 times the
`background power PB … and most preferably 1000 times to achieve the
`greatest effect of the invention. A background power PB of 1 kW
`[causes] little if any actual sputter deposition.”)
`
`Wang at 4:23-31 (“A small rotatable magnetron 40 is thus creating a
`region 42 of a high-density plasma (HDP)…”)
`
`[20b.] generating a
`magnetic field
`
`The combination of Wang and Kudryavtsev discloses generating a
`magnetic field proximate to the weakly-ionized plasma, the magnetic
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`
`Claims 11, 35
`
`proximate to the
`weakly-ionized
`plasma, the
`magnetic field
`substantially
`trapping electrons in
`the weakly-ionized
`plasma proximate to
`the sputtering target;
`and
`
`[20c.] applying a
`voltage pulse to the
`weakly-ionized
`plasma, an
`amplitude and a rise
`time of the voltage
`pulse being chosen
`to increase an
`excitation rate of
`ground state atoms
`that are present in
`the weakly-ionized
`plasma to create a
`multi-step ionization
`process that
`generates a strongly-
`ionized plasma,
`which comprises
`ions that sputter
`target material, from
`the weakly-ionized
`plasma, the multi-
`step ionization
`process comprising
`exciting the ground
`state atoms to
`
`EXHIBIT A.08
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Li
`
`field substantially trapping electrons in the weakly-ionized plasma
`proximate to the sputtering target.
`
`‘759 Patent at 3:10-12 (“FIG. 1 shows a cross-sectional view of a
`known magnetron sputtering apparatus 100…” that has a magnet 126.”)
`
`‘759 Patent at 4:4-10 [describing the prior art Fig. 1] (“The electrons,
`which cause ionization, are generally confined by the magnetic fields
`produced by the magnet 126. The magnetic confinement is strongest in
`a confinement region 142….”)
`
`Wang at Fig. 1.
`
`Wang at 4:23-27 (“A small rotatable magnetron 40 is disposed in the
`back of the target 14 to create a magnetic field near the face of the
`target 14 which traps electrons from the plasma to increase the electron
`density.”)
`The combination of Wang and Kudryavtsev discloses applying a
`voltage pulse to the weakly-ionized plasma, an amplitude and a rise
`time of the voltage pulse being chosen to increase an excitation rate of
`ground state atoms that are present in the weakly-ionized plasma to
`create a multi-step ionization process that generates a strongly-ionized
`plasma, which comprises ions that sputter target material, from the
`weakly-ionized plasma, the multi-step ionization process comprising
`exciting the ground state atoms to generate excited atoms, and then
`ionizing the excited atoms within the weakly-ionized plasma without
`forming an arc discharge.
`
`‘759 Patent at Fig. 5
`Wang at Figs. 6, 7.
`
`Wang at 7:61-62 (“The pulsed DC power supply 80 produces a train of
`
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`
`Claims 11, 35
`
`generate excited
`atoms, and then
`ionizing the excited
`atoms within the
`weakly-ionized
`plasma without
`forming an arc
`discharge.
`
`EXHIBIT A.08
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Li
`
`negative voltage pulses.”).
`
`Wang at 5:23-27 (“[The pulse’s] exact shape depends on the design of
`the pulsed DC power supply 80, and significant rise times and fall
`times are expected.”).
`
`Wang at 4:29-31 (“increases the sputtering rate...”).
`
`Wang at 7:19-25 (“Preferably, the peak power level PP is at least 10
`times the background power level PB, … most preferably 1000 times to
`achieve the greatest effects of the invention. A background power PB
`of 1 kW will typically be sufficient…”)
`
`Wang at 7:31-39 (“The SIP reactor is advantageous for a low-power,
`low-pressure background period since the small rotating SIP magnetron
`can maintain a plasma at a lower power and lower pressure than can a
`larger stationary magnetron. However, it is possible to combine highly
`ionized sputtering during the pulses With significant neutral sputtering
`during the back ground period.”).
`
`Wang at 7:3-6 (“Plasma ignition, particularly in plasma sputter
`reactors, has a tendency to generate particles during the initial arcing,
`which may dislodge large particles from the target or chamber.”)
`
`Wang at 7:47-49 (“The initial plasma ignition needs be performed only
`once and at much lower power levels so that particulates produced by
`arcing are much reduced.”).
`
`Wang at 7:13-28 (“Accordingly, it is advantageous to use a target
`power waveform illustrated in FIG. 6… As a result, once the plasma
`has been ignited at the beginning of sputtering prior to the illustrated
`waveform…”).
`
`Kudryavtsev at 34, right col, ¶ 4 (“Since the effects studied in this work
`are characteristic of ionization whenever a field is suddenly applied to a
`weakly ionized gas, they must be allowed for when studying emission
`mechanisms in pulsed gas lasers, gas breakdown, laser sparks, etc.”)
`
`Kudryavtsev at Fig. 1
`
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`

`
`EXHIBIT A.08
`U.S. Patent No. 7,147,759
`
`
`
`Claims 11, 35
`
`Wang in view of Kudryavtsev and Li
`
`
`Kudryavtsev at Fig. 6
`
`
`Kudryavtsev at 31, right col, ¶ 7 (“The behavior of the increase in ne
`with time thus enables us to arbitrarily divide the ionization process
`into two stages, which we will call the slow and fast growth stages.
`Fig. 1 illustrates the relationships between the main electron currents in
`terms of the atomic energy levels during the slow and fast stages.”).
`
`Kudryavtsev at 31, right col, ¶ 6 (“For nearly stationary n2 [excited
`atom density] values … there is an explosive increase in ne [plasma
`density]. The subsequent increase in ne then reaches its maximum
`value, equal to the rate of excitation [equation omitted], which is
`several orders of magnitude greater than the ionization rate during the
`initial stage.”)
`
`Kudryavtsev at Abstract (“[I]n a pulsed inert-gas discharge plasma at
`moderate pressures… [i]t is shown that the electron density increases
`explosively in time due to accumulation of atoms in the lowest excited
`
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`
`

`
`EXHIBIT A.08
`U.S. Patent No. 7,147,759
`
`
`
`Claims 11, 35
`
`Wang in view of Kudryavtsev and Li
`
`states.”)
`
`If one of ordinary skill, applying Wang’s power levels did not
`experience Kudryavtsev’s “explosive increase” in plasma density, it
`would have been obvious to adjust the operating parameters, e.g.,
`increase the pulse length and/or pressure, so as to trigger Kudryavtsev’s
`fast stage of ionization. One of ordinary skill would have been
`motivated to use Kudryavtsev’s fast stage of ionization in Wang so as
`to increase plasma density and thereby increase the sputtering rate.
`Further, use of Kudryavtsev’s fast stage in Wang would have been a
`combination of old elements that yielded predictable results of
`increasing plasma density and multi-step ionization.
`
`Kudryavtsev states, “[s]ince the effects studied in this work are
`characteristic of ionization whenever a field is suddenly applied to a
`weakly ionized gas, they must be allowed for when studying emission
`mechanisms in pulsed gas lasers, gas breakdown, laser sparks, etc.”
`Kudryavtsev at 34, right col, ¶ 4 (Ex. 1004). Because Wang applies
`voltage pulses that “suddenly generate an electric field,” one of
`ordinary skill reading Wang would have been motivated to consider
`Kudryavtsev and to use Kudryavtsev’s fast stage in Wang.
`
`The combination of Wang, Kudryavtsev and Li discloses forming a
`film on a surface of a substrate from the material sputtered from the
`sputtering target.
`
`See evidence cited in claim 20.
`
`‘759 Patent at 3:10-12 (“FIG. 1 shows a cross-sectional view of a
`known magnetron sputtering apparatus 100…”)
`
`‘759 Patent at 3:44-46 (“substrate 134 is positioned in the vacuum
`chamber 104 on a substrate support 135 to receive the sputtered target
`material 116.”)
`
`Wang at Fig. 1
`
`Wang at 3:63-66 (“pedestal electrode 18 [that] supports a wafer 20 to
`be sputter coated in planar opposition to the target 14 across a
`processing region 22.”).
`
`The combination of Wang with Kudryavtsev and Mozgrin discloses
`controlling a temperature of the film.
`
`12
`
`34. The method of
`claim 20 further
`comprising forming
`a film on a surface
`of a substrate from
`the material
`sputtered from the
`sputtering target.
`
`
`
`35. The method of
`claim 34 further
`comprising
`
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`EXHIBIT A.08
`U.S. Patent No. 7,147,759
`
`Wang in view of Kudryavtsev and Li
`
`See evidence cited in claim 34
`
`See evidence cited in claim 11.
`
`Claims 11, 35
`
`controlling a
`temperature of the
`film.
`
`
`
`
`
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