`
`Express Mail Label No. ED475251516US
`PATENT
`
`Attorney Docket No.: ZON—001
`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
`
`APPLICANT:
`
`Roman Chistyakov
`
`SERIAL NO.:
`
`10/065,277
`
`GROUP NO.:
`
`1753
`
`FILING DATE:
`
`September 30, 2002
`
`EXAMINER:
`
`McDonald, Rodney G.
`
`TITLE:
`
`HIGH-POWER PULSED MAGNETRON SPUTTERING
`
`Commissioner for Patents
`
`Alexandria, Virginia 22313-1450
`
`Sir:
`
`RESPONSE
`
`The following amendments and remarks are responsive to the Office Action mailed on
`
`August 30, 2004 in the above-identified patent application. Entry and consideration of the
`
`following amendments and remarks, and allowance of the claims, as presented, are respectfully
`
`requested. A Petition for a three—month extension of time, up to and including February 28,
`
`2005 is submitted herewith. The Commissioner is hereby authorized to charge the extension fee,
`
`the additional claims fee, and any other proper fees to Attorney's Deposit Account No. 501211.
`
`Please enter the following amendments and consider the remarks that follow.
`
`INTEL 1209
`
`INTEL 1209
`
`

`

`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 2 of 20
`
`Pending Claims:
`
`(Previously Presented) A magnetically enhanced sputtering source comprising:
`
`an anode;
`
`a cathode assembly that is positioned adjacent to the anode, the cathode assembly
`
`including a sputtering target;
`
`an ionization source that generates a weakly—ionized plasma proximate to the
`
`anode and the cathode assembly;
`
`d)
`
`a magnet that is positioned to generate a magnetic field proximate to the weakly-
`
`ionized plasma, the magnetic field substantially trapping electrons in the weakly-
`
`ionized plasma proximate to the sputtering target; and
`
`a power supply generating a voltage pulse that produces an electric field between
`
`the cathode assembly and the anode, an amplitude and a rise time of the voltage
`
`pulse being chosen to increase an excitation rate of ground state atoms that are
`
`present in the weakly—ionized plasma to create a multi-step ionization process that
`
`generates a strongly—ionized plasma from the weakly-ionized plasma, the multi-
`
`step ionization process comprising exciting the ground state atoms to generate
`
`excited atoms, and then ionizing the excited atoms within the weakly-ionized
`
`plasma to create ions that sputter target material from the sputtering target.
`
`2.
`
`(original) The sputtering source of claim 1 wherein the power supply generates a
`
`constant power.
`
`3.
`
`(original) The sputtering source of claim 1 wherein the power supply generates a
`
`constant voltage.
`
`4.
`
`(original) The sputtering source of claim 1 wherein the electric field comprises a quasi-
`
`static electric field.
`
`

`

`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 3 of 20
`
`5.
`
`(original) The sputtering source of claim 1 wherein the electric field comprises a pulsed
`
`electric field.
`
`(Previously Presented) The sputtering source of claim 1 wherein the rise time of the
`
`voltage pulse is chosen to increase the ionization rate of the excited atoms in the weakly—
`
`ionized plasma.
`
`(Previously Presented) The sputtering source of claim 1 wherein the weakly-ionized
`
`plasma reduces the probability of developing an electrical breakdown condition between
`
`the anode and the cathode assembly.
`
`(original) The sputtering source of claim 1 wherein the ions in the strongly-ionized
`
`plasma impact the surface of the sputtering target in a manner that causes substantially
`
`uniform erosion of the sputtering target.
`
`(original) The sputtering source of claim 1 wherein the strongly-ionized plasma is
`
`substantially uniform proximate to the sputtering target.
`
`10.
`
`11.
`
`12.
`
`13.
`
`14.
`
`(original) The sputtering source of claim 1 further comprising a substrate support that is
`
`positioned in a path of the sputtering flux.
`
`(original) The sputtering source of claim 10 further comprising a temperature controller
`
`that controls the temperature of the substrate support.
`
`(original) The sputtering source of claim 10 further comprising a bias voltage power
`
`supply that applies a bias voltage to a substrate that is positioned on the substrate support.
`
`(original) The sputtering source of claim 1 wherein a volume between the anode and the
`
`cathode assembly is chosen to increase the ionization rate of the excited atoms in the
`
`weakly-ionized plasma.
`
`(original) The sputtering source of claim 1 wherein the ionization source comprises an
`
`electrode.
`
`

`

`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 4 of 20
`
`15.
`
`16.
`
`17.
`
`18.
`
`19.
`
`(original) The sputtering source of claim 1 wherein the ionization source comprises a DC
`
`power supply that generates an electric field proximate to the anode and the cathode
`
`assembly.
`
`(original) The sputtering source of claim 1 wherein the ionization source comprises an
`
`AC power supply that generates an electric field proximate to the anode and the cathode
`
`assembly.
`
`(original) The sputtering source of claim 1 wherein the ionization source is chosen from
`
`the group comprising a U V source, an X-ray source, an electron beam source, and an ion
`
`beam source.
`
`(original) The sputtering source of claim 1 wherein the magnet comprises an electro-
`
`magnet.
`
`(original) The sputtering source of claim 1 wherein the sputtering target is formed of a
`
`material chosen from the group comprising a metallic material, a polymer material, a
`
`superconductive material, a magnetic material, a non—magnetic material, a conductive
`
`material, a non-conductive material, a composite material, a reactive material, and a
`
`refractory material.
`
`20.
`
`(Previously Presented) A method of generating sputtering flux, the method comprising:
`
`a)
`
`ionizing a feed gas to generate a weakly-ionized plasma proximate to a sputtering
`
`target;
`
`b)
`
`generating a magnetic field proximate to the weakly-ionized plasma, the magnetic
`
`field substantially trapping electrons in the weakly-ionized plasma proximate to
`
`the sputtering target; and
`
`c)
`
`applying a voltage pulse to the weakly—ionized plasma, an amplitude and a rise
`
`time of the voltage pulse being chosen to increase an excitation rate of ground
`
`state atoms that are present in the weakly-ionized plasma to create a multi-step
`
`ionization process that generates a strongly-ionized plasma from the weakly—
`
`

`

`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 5 of 20
`
`ionized plasma, the multi-step ionization process comprising exciting the ground
`
`state atoms to generate excited atoms, and then ionizing the excited atoms within
`
`the weakly-ionized plasma to sputter target material from the sputtering target.
`
`21.
`
`(original) The method of claim 20 wherein the applying the electric field comprises a
`
`applying a quasi-static electric field.
`
`22.
`
`23.
`
`24.
`
`25.
`
`26.
`
`27.
`
`28.
`
`29.
`
`(original) The method of claim 20 wherein the applying the electric field comprises
`
`applying a substantially uniform electric field.
`
`(original) The method of claim 20 wherein the applying the electric field comprises
`
`applying an electrical pulse across the weakly-ionized plasma.
`
`(original) The method of claim 23 further comprising selecting at least one of a pulse
`
`amplitude and a pulse width of the electrical pulse that increases an ionization rate of the
`
`strongly-ionized plasma.
`
`(original) The method of claim 23 further comprising selecting at least one of a pulse
`
`amplitude and a pulse width of the electrical pulse that reduces a probability of
`
`developing an electrical breakdown condition proximate to the sputtering target.
`
`(original) The method of claim 23 further comprising selecting at least one of a pulse
`
`amplitude and a pulse width of the electrical pulse that causes the strongly-ionized
`
`plasma to be substantially uniform in an area adjacent to a surface of the sputtering target.
`
`(original) The method of claim 23 wherein the electrical pulse comprises a pulse having
`
`a current density that is greater than lA/cmz.
`
`(original) The method of claim 23 wherein the electrical pulse comprises a pulse having
`
`a pulse width that is greater than 1.0 microseconds.
`
`(original) The method of claim 23 wherein the electrical pulse comprises a pulse train
`
`having a repetition rate that is substantially between 0.1Hz and lkHz.
`
`

`

`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 6 of 20
`
`30.
`
`31.
`
`32.
`
`33.
`
`34.
`
`35.
`
`36.
`
`37.
`
`38.
`
`39.
`
`40.
`
`(original) The method of claim 20 wherein the ions in the strongly-ionized plasma
`
`impact the surface of the sputtering target in a substantially uniform manner.
`
`(original) The method of claim 20 wherein the strongly-ionized plasma is substantially
`
`uniform proximate to the sputtering target.
`
`(original) The method of claim 20 wherein the peak plasma density of the weakly-
`
`ionized plasma is less than about 10'2 cm'3.
`
`(original) The method of claim 20 wherein the peak plasma density of the strongly-
`
`ionized plasma is greater than about 1012 cm'3.
`
`(Previously Presented) The method of claim 20 further comprising forming a film on a
`
`Surface of a substrate from the material sputtered from the sputtering target.
`
`(original) The method of claim 34 further comprising controlling a temperature of the
`
`film.
`
`(original) The method of claim 34 further comprising applying a bias voltage to the film.
`
`(original) The method of claim 20 wherein the ionizing the feed gas comprises exposing
`
`the feed gas to an electric field.
`
`(original) The method of claim 20 wherein the ionizing the feed gas comprises exposing
`
`the feed gas to an electrode that is adapted to emit electrons.
`
`(original) The method of claim 20 wherein the ionizing the feed gas comprises exposing
`
`the feed gas to at least one of a UV source, an X-ray source, an electron beam source, and
`
`an ion beam source.
`
`(Previously Presented) A magnetically enhanced sputtering source comprising:
`
`a)
`
`means for ionizing a feed gas to generate a weakly-ionized plasma proximate to a
`
`sputtering target;
`
`

`

`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 7 of 20
`
`b)
`
`means for generating a magnetic field proximate to the weakly-ionized plasma,
`
`the magnetic field substantially trapping electrons in the weakly—ionized plasma
`
`proximate to the sputtering target; and
`
`0)
`
`means for applying a voltage pulse to the weakly—ionized plasma, an amplitude
`
`and a rise time of the voltage pulse being chosen to increase an excitation rate of
`
`ground state atoms that are present in the weakly—ionized plasma to create a multi-
`
`step ionization process that generates a strongly-ionized plasma from the weakly-
`
`ionized plasma, the multi-step ionization process comprising exciting the ground
`
`state atoms to generate excited atoms, and then ionizing the excited atoms within
`
`the weakly-ionized plasma to ions that sputter target material from the sputtering
`
`target.
`
`41.
`
`42.
`
`43.
`
`44.,
`
`45.
`
`46.
`
`47.
`
`(Previously Presented) The sputtering source of claim 1 wherein the cathode assembly
`
`and the anode are positioned so as to form a gap therebetween.
`
`(Previously Presented) The sputtering source of claim 1 wherein the weakly-ionized
`
`plasma is generated from a feed gas that comprises the ground state atoms.
`
`(Previously Presented) The sputtering source of claim 1 wherein the excited atoms
`
`within the weakly-ionized plasma are ionized by electrons to create the ions that sputter
`
`material from the sputtering target.
`
`(Previously Presented) The sputtering source of claim 1 wherein the rise time of the
`
`voltage pulse is approximately between 0.01 and 100V/usec.
`
`(Previously Presented) The sputtering source of claim 1 wherein the amplitude of the
`
`voltage pulse is approximately between 100V and 30kV.
`
`(Previously Presented) The method of claim 20 wherein the weakly-ionized plasma is
`
`generated from a feed gas that comprises the ground state atoms.
`
`(Previously Presented) The method of claim 20 wherein a duration of the weakly-ionized
`
`plasma is approximately between one microsecond and one hundred seconds.
`
`

`

`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 8 of 20
`
`48.
`
`(Previously Presented) The method of claim 20 wherein the ionizing the excited atoms
`
`within the weakly-ionized plasma to create ions that sputter material from the sputtering
`
`target comprises ionizing the excited atoms with electrons.
`
`49.
`
`(Previously Presented) The method of claim 20 wherein the rise time of the voltage pulse
`
`is approximately between 0.01 and 100V/usec.
`
`50.
`
`(Previously Presented) The method of claim 20 wherein the amplitude of the voltage
`
`pulse is approximately between 100V and 30kV.
`
`

`

`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 9 of 20
`
`Pending Claims
`
`REMARKS
`
`Claims 1-50 are currently pending in the present application. Upon entry of the
`
`present Response, reconsideration of claims 1-50 and consideration is respectfully requested.
`
`Provisional Non-Statutory Double Patenting Rejections
`
`The Examiner has rejected claims 1-50 under the judicially created doctrine of
`
`double patenting over claims of copending Patent Application Serial No. 10/065,739 in
`
`View of Kouznetsov (WO 98/40532). Copending Patent Application Serial No.
`
`10/065,739 is assigned to the assignee of the present application. The Applicant would
`
`like to inform the Examiner that copending Patent Application Serial No. 10/065,739 has
`
`been allowed and the issue fee was paid on February 9, 2005.
`
`The Applicant is submitting herewith a Terminal Disclaimer to Obviate a Provisional
`
`Double Patenting Rejection Over a Pending Second Application in compliance with 37 C.F.R.
`
`1.321. The Terminal Disclaimer was signed by the President of Zond, Inc., who is also the sole
`
`inventor of the present application. The Applicant is also submitting a Statement Under 37 CFR
`3.73(b) that states that Zond, Inc. is the assignee of the entire right, title, and interest of the
`
`Pending Second Application. An Assignment assigning the entire right, title, and interest in the
`
`present application to Zond, Inc. was recorded at Reel 013351, Frame 0573.
`
`A fee transmittal authorizing the US. Patent Office to charge the $65.00 fee for
`
`the Statutory Disclaimer as set forth in 37 CFR § 1.20(d) is enclosed.
`
`Rejections under 35 U.S.C. §102§b) As Being Anticipated by Kouznetsov
`
`Claims 1, 5-10, 13-14, 16, 19-20, 22—31, 34, 37-38, and 40-50 are rejected under 35
`
`U.S.C. §102(b) as being anticipated by Kouznetsov (WO98/40532) (hereinafter “Kouznetsov”).
`
`The Applicant respectfully traverses this rejected under 35 U.S.C. §102(b).
`
`To anticipate a claim under 35 U.S.C. §102, a single reference must teach every aspect of
`
`the claimed invention either explicitly or impliedly. Any feature not directly taught by the
`
`

`

`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 10 of 20
`
`reference must be inherently present in the reference. Thus, a claim is anticipated by a reference
`
`only if each and every element of the claim is described, either expressly or inherently, in a
`
`single prior art reference.
`
`Independent Claim 1 and Dependent Claims 5-10, 13, 14, 16, and 19
`
`The Applicant respectfully submits that Kouznetsov does not describe each and every
`
`element of independent claim 1 as amended in the Response to Office Action dated June 14,
`2004. Independent claim 1 recites a magnetically enhanced sputtering source having a power
`
`supply that generates a voltage pulse that produces an electric field between the cathode
`
`assembly and the anode. The voltage pulse generated by the power supply comprises an
`
`amplitude and a rise time that is chosen to increase an excitation rate of ground state atoms that
`
`are present in the weakly-ionized plasma to create a multi-step ionization process that generates
`
`a strongly-ionized plasma from the weakly-ionized plasma.
`
`The Applicant submits that there is no description in Kouznetsov of the power supply
`
`claimed in independent claim 1. Specifically, the Applicant submits that there is no description
`
`in Kouznetsov of choosing the amplitude and the rise time of the voltage pulse generated by the
`
`power supply to increase the excitation rate of ground state atoms that are present in the weakly-
`
`ionized plasma to generate a multi—step ionization process as claimed in independent claim 1.
`
`The last paragraph of page 3 of the Office Action dated August 30, 2004 states that
`
`Kouznetsov describes a power supply where each pulse can be in the range of 0. 1KW to IMW
`
`and that the pulses can have a duration in the range of less than a hundred microseconds up to
`
`hundreds of microseconds and the intervals between pulses can range from milliseconds up to
`
`seconds. The Office Action references Kouznetsov, page 4, lines 14-23. The first full paragraph
`
`of page 4 of the Office Action dated August 30, 2004 states that Kouznetsov describes that the
`
`voltage of the pulses can be hundreds of volts up to several kilovolts. The Office Action
`
`references Kouznetsov, page 6, lines 24-25.
`
`The Applicant submits that many pulsed power supplies for experimental apparatus, like
`
`the apparatus described in Kouznetsov, can generate at least one of variable power levels,
`
`variable pulse durations and variable intervals between pulses. The Applicant submits that
`
`

`

`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 11 of 20
`
`merely describing a power supply that can generated pulses with variable parameters does not
`
`teach generating pulses with amplitudes and rise times that are chosen to achieve particular
`
`ionization characteristics, such as generating a multi-step ionization process as claimed in
`
`independent claim 1 and as described in the specification. See, for example, paragraphs 63-67 of
`
`the present application for a description of multi-step ionization.
`
`The Office Action dated August 30, 2004 states on the last paragraph of page 2 that the
`
`gas in the region between the anode and the cathode will be partially ionized by electrons. The
`
`Office Action references Kouznetsov, page 9, lines 21-25. This section of Kouznetsov also
`
`states that the electrons will be somewhat trapped or confined by the magnetic field primarily
`
`moving in the areas of low magnetic field intensity and that there is a larger concentration of
`
`ions in these areas.
`
`The Applicant submits that the terms “partial ionization” and “more ionized” used in
`
`Kouznetsov page 9, lines 21-25 refer to the plasma itself. These terms do not imply anything
`
`about the ionization process used to generate the ions in the partially or more fully ionized
`
`plasmas. The Applicant submits that Kouznetsov page 9, lines 21-25 describes the generation of
`
`partially ionized and more fully ionized plasmas by direct ionization or atomic ionization by
`
`electron impact (hereinafter “direct ionization”) that is used in most known plasma generators.
`
`See, for example, paragraphs 27-29 of the present specification for a description of direct
`
`ionization.
`
`According to Kouznetsov, the pulsed power source used in the Kouznetsov apparatus
`
`provides “pulses in such a way, i.e. that so much power is developed in each pulse, that in the
`
`application of such a pulse, for a very short time during the start of the pulse, the state of the gas
`
`located at the region in which the electrons are trapped by the magnetic field will very rapidly
`
`reach a fully ionized state...” See, for example, Kouznetsov page 5, lines 1-4. Thus,
`
`Kouznetsov describes a power supply that generates a pulse having a large voltage (2,000 Volts)
`
`in a very short time duration so that the gas very rapidly reaches a fully ionized state.
`
`The Applicant submits that one skilled in the art will appreciate that the application of a
`
`very large voltage pulse in a very short time duration will ionize the gas by direct ionization with
`
`

`

`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 12 of 20
`
`electrons located in the region having crossed electric and magnetic fields. See, for example,
`
`Kouznetsov page 12, lines 22-26. The Applicant further submits that there is no description in
`
`Kouznetsov of the multi-step ionization process claimed in independent claim 1. See, for
`
`example, paragraphs 63-67 of the present application for a description of multi-step ionization.
`
`The energies required to achieve the multi-step iouization process claimed in independent
`
`claim 1 are different from the energies required to achieve the direct ionization that is used to
`
`generated plasmas in the apparatus described in Kouznetsov. As described in paragraph 63 of
`
`the specification of the present application, an argon atom requires an energy of about 11.55eV
`
`to become excited. The excited atoms only require about 4eV of energy to ionize. In contrast,
`
`neutral argon atoms ionized by direct ionization require about 15.76eV. Independent claim 1
`
`recites that an amplitude and a rise time of the voltage pulse are chosen to increase an excitation
`
`rate of ground state atoms that are present in the weakly-ionized plasma to create a multi—step
`
`ionization process that generates a strongly-ionized plasma from the weakly-ionized plasma. For
`
`the example given in the specification, the amplitude and rise time are chosen to result in a
`
`11.55eV increase in energy compared with a 15.76eV increase in energy that would be required
`
`to ionize neutral argon atoms by direct ionization.
`
`Furthermore, the Applicant submits that one skilled in the art will appreciate that if any
`
`multi-step ionization is occurring in plasmas generated using the power supply described in
`
`Kouznetsov, that such ionization will be statistically insignificant. Therefore, the Applicant
`
`submits that Kouznetsov does not describe the power supply claimed in independent claim 1.
`
`In view of the above remarks, the Applicant respectfully submits that Kouznetsov does
`
`not describe each and every element of independent claim 1, either expressly or inherently.
`
`Therefore, the Applicant submits that Kouznetsov does not anticipate independent claim 1 under
`
`35 U.S.C. §102(b). Thus, the Applicant submits that independent claim 1 is allowable. The
`
`Applicant also submits that dependent claims 5-10, 13, 14, 16, and 19 are allowable as
`
`depending from an allowable base claim.
`
`Independent Claim 20 and Dependent Claims 22-31, 34, and 37-38
`
`The Applicant respectfully submits that Kouznetsov does not describe each and every
`
`

`

`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 13 of 20
`
`element of independent claim 20 as amended in the Response to Office Action dated June 14,
`
`2004. Independent claim 20 recites the step of applying a voltage pulse to the weakly-ionized
`
`plasma. An amplitude and a rise time of the voltage pulse are chosen to increase an excitation
`
`rate of ground state atoms in the weakly-ionized plasma to create a multi-step ionization process.
`
`The multi-step ionization process generates excited atoms from ground state atoms in the
`
`weakly-ionized plasma, and then ionizes the excited atoms in the weakly-ionized plasma.
`
`The Applicant submits that there is no description in Kouznetsov of the method of
`
`generating a strongly—ionized plasma using a multi-step ionization process as claimed in
`
`independent claim 20. As described in connection with the rejection of independent claim 1
`
`under 35 U.S.C. §102(b), Kouznetsov describes a power supply that generates a pulse having a
`
`large voltage (2,000 Volts) in a very short time duration so that the gas very rapidly reaches a
`
`fully ionized state. The Applicant submits that one skilled in the art will appreciate that the
`
`application of a very large voltage pulse in a very short time duration will ionize the gas by
`
`direct ionization. Furthermore, the Applicant believes that if any multi—step ionization is
`
`occurring in plasma generated using the method described in Kouznetsov, that such ionization
`
`will be statistically insignificant.
`
`In view of the above remarks, the Applicant respectfully submits that Kouznetsov
`
`does not describe each and every element of independent claim 20. Therefore, the Applicant
`
`submits that Kouznetsov does not anticipate independent claim 20. Thus, the Applicant
`
`submits that independent claim 20 and dependent claims 22-31, 34, 37, and 38 are allowable
`
`under 35 U.S.C. §102(b).
`
`Independent Claim 40 and Dependent Claims 41-50
`
`The Applicant respectfully submits that Kouznetsov does not describe each and every
`
`element of independent claim 40 as amended in the Response to Office Action dated June 14,
`
`2004. Independent claim 40 recites a means for applying a voltage pulse to a weakly-ionized
`
`plasma. An amplitude and a rise time of the voltage pulse is chosen to increase an excitation rate
`
`of ground state atoms that are present in the weakly—ionized plasma to create a multi-step
`
`ionization process that generates a strongly-ionized plasma from the weakly-ionized plasma.
`
`

`

`Amendment and Response
`Applicant: Chistyakov
`Serial No.: 10/065,277
`Page 14 of 20
`
`Also, the multi-step ionization process comprises exciting the ground state atoms to generate
`
`excited atoms, and then ionizing the excited atoms within the weakly-ionized plasma to ions that
`
`sputter target material from the sputtering target.
`
`The Applicant submits that there is no description in Kouznetsov of the means for
`
`applying a voltage pulse to the weakly-ionized plasma as claimed in independent claim 40. As
`
`described in connection with the rejection of independent claim 1 under 35 U.S.C. §102(b),
`
`Kouznetsov describes a power supply that generates a pulse having a large voltage (2,000 Volts)
`
`in a very short time duration so that the gas very rapidly reaches a fully ionized state. The
`
`Applicant submits that one skilled in the art will appreciate that the application of a very large
`
`voltage pulse in a very short time duration will ionize the gas by direct ionization. Furthermore,
`
`the Applicant believes that if any multi-step ionization is occurring in plasma generated using the
`
`method described in Kouznetsov, that such ionization will be statistically insignificant.
`
`In View of the above remarks, the Applicant respectfully submits that Kouznetsov
`
`does not describe each and every element of independent claim 40. Therefore, the Applicant
`
`submits that Kouznetsov does not anticipate independent claim 40. Thus, the Applicant
`
`submits that independent claim 40 and dependent claims 41—50 are allowable under 35
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`U.S.C. §102(b).
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`Rejections under 35 U.S.C. §1021b) as Being Anticipated by Mozgrin
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`Claims 1, 4—5, 7, 13-14, 16, 19—25, 27-29, 32-33, 37, and 40 are rejected under 35 U.S.C.
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`§102(b) as being anticipated by Mozgrin et a1. entitled “High Current Low-Pressure Quasi-
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`Stationary Discharge in a Magnetic Field: Experimental Research”, Plasma Physics Reports,
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`Vol. 21, No. 5, 1995, pp. 400-409 (hereinafter “Mozgrin”). The Applicant respectfully traverses
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`this rejected under 35 U.S.C. §102(b).
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`To anticipate a claim under 35 U.S.C. §102, a single reference must teach every aspect of
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`the claimed invention either explicitly or impliedly. Any feature not directly taught by the
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`reference must be inherently present in the reference. Thus, a claim is anticipated by a reference
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`only if each and every element of the claim is described, either expressly or inherently, in a
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`single prior art reference.
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`

`

`Amendment and Response
`Applicant: Chistyakov
`Serial No.2 10/065,277
`Page 15 of 20
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`Independent Claim 1 and Dependent Claims 4-5, 7, 13-14, 16, and 19
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`The Applicant respectfully submits that Mozgrin does not describe each and every
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`element of independent claim 1 as amended in the Response to Office Action dated June 14,
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`2004. Independent claim 1 recites a magnetically enhanced sputtering source having a power
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`supply that generates a voltage pulse that produces an electric field between the cathode
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`assembly and the anode. The voltage pulse generated by the power supply comprises an
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`amplitude and a rise time that is chosen to increase an excitation rate of ground state atoms that
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`are present in the weakly-ionized plasma to create a multi-step ionization process that generates
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`a strongly-ionized plasma from the weakly—ionized plasma.
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`The Applicant submits that there is no description in Mozgrin of the power supply
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`claimed in independent claim 1. Specifically, there is no description in Mozgrin of a power
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`supply that generates a voltage pulse having an amplitude and a rise time that are chosen to
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`increase the excitation rate of ground state atoms present in the weakly-ionized plasma to
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`create a multi-step ionization process.
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`The last two paragraphs of page 4 of the Office Action dated August 30, 2004 states
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`that Mozgrin describes a system for pre-ionization and a pulsed discharge supply unit. The
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`first full paragraph of page 5 of the Office Action dated August 30, 2004 states that Mozgrin
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`describes a pulse duration of 25ms and a repetition frequency of 10Hz.
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`As described in connection with the 35 U.S.C. §102(b) Kouznetsov rejection, the
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`Applicant submits that merely describing a power supply that can generated pulses with
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`variable parameters does not teach generating pulses with amplitudes and rise times that are
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`chosen to achieve particular ionization characteristics, such as generating a multi-step
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`ionization process, as claimed in independent claim 1 and as described in the specification.
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`See, for example, paragraphs 63-67 of the present application for a description of multi-step
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`ionization.
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`Furthermore, the Applicant submits that the term “pre-ionization” does not imply
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`anything about the ionization process used to generate the ions and certainly does not imply that
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`a multi-step ionization process as described in the present application is used to generate the
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`

`

`Amendment and Response
`Applicant: Chistyakov
`SerialNo.: 10/065,277
`Page 16 of 20
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`discharge. The Applicant submits that Mozgrin describes a power Supply that uses very high-
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`power pulses to create a quasi-stationary discharge with direct ionization, not with the multi-step
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`ionization as claimed in independent claim 1. See, for example, paragraphs 27-29 of the present
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`specification for a description of direct ionization. The current and voltage characteristics
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`(CVC) shown in FIG. 4 of Mozgrin includes four parts. The following paragraphs describe each
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`of the four parts of the CVC of the quasi—stationary discharge shown in FIG. 4 of Mozgrin.
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`Part 1 of the CVC shown in FIG. 4 of Mozgrin is a low current (0.2A) discharge
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`regime that is a pre-ionization stage of the quasi—stationary discharge. The pre-ionization
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`stage is generated using a high—voltage power supply unit that produces a high-voltage, low—
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`current discharge between two electrodes to create a pre-ionized plasma. The pre-ionized
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`plasma density is low. However, the Applicant submits that the ions in the pre-ionized
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`plasma are generated by direct ionization and any ions that are generated by a multi-step
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`ionization process will be statistically insignificant. Furthermore, there is no description
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`related to Part 1 of the CVC of choosing an amplitude and a rise time as claimed in
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`independent claim 1.
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`Part 2 of the CVC shown in FIG. 4 of Mozgrin is a high—current, high-voltage
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`discharge regime having a discharge current that is in the range of 0.2A-15A and a discharge
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`voltage that is in the range of 350V-500V. The plasma discharge is formed by using a square
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`voltage pulse. The resulting plasma discharge appears to be a typical magnetron plasma
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`discharge that is commonly generated in plasma processing systems. The Applicant submits
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`that the ions in Part 2 of the CVC are generated by direct ionization and any ions that are
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`generated by a multi-step ionization process will be statistically insignificant. Furthermore,
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`there is no description related to Part 2 of the CVC of choosing an amplitude and a rise time
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`as claimed in independent claim 1. Instead, Mozgrin describes varying the plasma discharge
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`conditions by changing the pressure and magnetic field strength. See Mozgrin page 403 lines
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`8-13.
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`Part 3 of the CVC shown in FIG. 4 of Mozgrin is a high-current discharge regime in
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`which the discharge voltage remains stationary at 90V over a current that is in the range of
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`15A~1,000A. Part 3 of the CVC corresponds to a prior art magnetron discharge for high-
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`

`

`Amendment and Response
`Applicant: Chistyakov
`Serial N0.: 10/065,277
`Page 17 of 20
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`pressure (10'I torr) plasma processing. The voltage drops sharply in this regime until the
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`current reaches a quasi-stationary value that maintains the discharge power at a constant
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`value. The Applicant submits that the ions are generated by direct ionization and any ions
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`that are generated by a multi-step ionization process wil