`
`UNITED STATES PATENT AND TRADEMARK OFFICE
`UNITED STATES DEPARTMENT OF COMMERCE
`United States Patent and Trademark Office
`Address: COMMISSIONER FOR PATENTS
`PO. Box I450
`Alexandria, Virginia 223 ”-1450
`www.mpto.gnv
`
`APPLICATION NO.
`
`FILING DATE
`
`FIRST NAMED INVENTOR
`
`ATTORNEY DOCKET NO.
`
`CONFIRMATION N0.
`
`l0/065,277
`
`09/30/2002
`
`Roman Chistyakov
`
`ZON—OOI
`
`5690
`
`RAUSCHENBACH PATENT LAW GROUP, LLC
`PO. BOX 387
`
`BEDFORD, MA 01730
`
`MCDONALD, RODNEY GLENN
`
`NW”
`I753
`
`DATE MAILED: 0I/l l/2006
`
`Please find below and/or attached an Office communication concerning this application or proceeding.
`
`PTO-90C (Rev. 10/03)
`
`INTEL 1012
`
`
`
`INTEL 1012
`
`

`

`Office Action Summary
`
`Application No.
`
`Applicant(s)
`
`10/065,277
`
`Examine,
`
`CHISTYAKOV, ROMAN
`
`Art Unit
`
`-- The MAILING DA TE of this communication appears on the cover sheet with the correspondence address --
`Period for Reply
`
`Rodney G. McDonald
`
`1753
`
`A SHORTENED STATUTORY PERIOD FOR REPLY IS SET TO EXPIRE 3 MONTH(S) OR THIRTY (30) DAYS,
`WHICHEVER IS LONGER, FROM THE MAILING DATE OF THIS COMMUNICATION.
`Extensions of time may be available under the provisions of 37 CFR 1 136(a) In no event, however may a reply be timerIfiled
`after SIX (6) MONTHS from the mailing date of this communication.
`If No period for reply'Is specified above. the maximum statutory period will apply and will expire SIX (6) MONTHS from the mailing date of this communication.
`Failure to reply within the set or extended period for reply will, by statute. cause the application to become ABANDONED (35 U.S.C. § 133).
`Any reply received by the Office later than three months after the mailing date of this communication, even if timely filed, may reduce any
`earned patent term adjustment. See 37 CFR 1.704(b).
`
`Status
`
`HIE Responsive to communication(s) filed on 07 November 2005.
`
`2a)IZ This action is FINAL.
`
`2b)|:] This action is non-final.
`
`3)l:l Since this application Is in condition for allowance except for formal matters, prosecution as to the merits is
`
`closed in accordance with the practice under Ex parte Quayle, 1935 CD. 11, 453 0.6. 213.
`
`Disposition of Claims
`
`4)® Claim(s) _1_-§Q is/are pending in the application.
`
`4a) Of the above Claim(s) _ is/are withdrawn from consideration.
`
`5)I:l Claim(s) __ is/are allowed.
`
`6)IXI Claim(s) fl is/are rejected.
`
`7):] Claim(s) _ is/are objected to.
`8)EI Claim(s)
`are subject to restriction and/or election requirement.
`
`Application Papers
`
`9)l:] The specification is objected to by the Examiner.
`
`
`
`10):] The drawing(s) filed on __ is/are: a)E] accepted or b)E] objected to by the Examiner.
`Applicant may not request that any objection to the drawing(s) be held in abeyance. See 37 CF R 1.85(a).
`
`Replacement drawing sheet(s) including the correction is required if the drawing(s) is objected to. See 37 CF R 1.121 (d).
`11)I:| The oath or declaration is objected to by the Examiner. Note the attached Office Action or form PTO-152.
`
`Priority under 35 U.S.C. § 119
`
`12)|:] Acknowledgment is made of a claim for foreign priority under 35 U.S.C. § 119(a)-(d) or (f).
`a)l:j All
`b)I:] Some * c)[:] None of:
`
`1.l:| Certified copies of the priority documents have been received.
`2:] Certified copies of the priority documents have been received in Application No.
`3.[:] Copies of the certified copies of the priority documents have been received in this National Stage
`
`application from the International Bureau (PCT Rule 17.2(a)).
`
`* See the attached detailed Office action for a list of the certified copies not received.
`
`Attachment(s)
`
`1) [I Notice of References Cited (PTO-892)
`2) '3 Notice of Draftsperson's Patent Drawing Review (PTO-948)
`3) El Information Disclosure Statement(s) (PTO-1449 or PTO/SB/OB)
`Paper No(s)/Mai| Date _.
`US. Patent and Trademrk Office
`
`4) [:1 Interview Summary (PTO—413)
`Paper No(s)/Mai| Date. __ .
`5) CI Notice of Informal Patent Application (PTO-152)
`6) C] Other: __
`
`PTOL-326 (Rev. 7-05)
`
`Office Action Summary
`
`Part of Paper No./Mail Date 20060106
`
`
`
`

`

`Application/Control Number: 10/065,277
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`Page 2
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`Art Unit: 1753
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`DETAILED ACTION
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`Continued Examination Under 37 CFR 1.114
`
`A request for continued examination under 37 CFR 1.114, including the fee set
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`forth, in 37 CFR 1.17(e), was filed in this application after final rejection. Since this
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`application is eligible for continued examination under 37 CFR 1.114, and the fee set
`
`forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action
`
`has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on October
`
`27, 2005 has been entered.
`
`Claim Rejections - 35 USC § 102
`
`The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that
`
`form the basis for the rejections under this section made in this Office action:
`
`A person shall be entitled to a patent unless —
`
`(b) the invention was patented or described in a printed publication in this or a foreign country or in public
`use or on sale in this country, more than one year prior to the date of application for patent in the United
`States.
`
`Claims 1, 5-10, 13, 14, 16, 19, 20, 22-31, 34, 37, 38 and 40-50 are rejected
`
`under 35 U.S.C. 102(b) as being anticipated by Kouznetsov (WO 98/40532).
`
`Kouznetsov teach in Fig. 2 a magnetron sputtering device. The sputtering
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`device has a sputtering chamber 1 and a target 9. The substrate 13 is attached to
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`some electrically isolating support 15 at the end of a wall. (Page 8 lines 29-37;
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`Column 9 lines 1-6) A magnet or magnets 17 are mounted so that the north pole or
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`poles are arranged at the periphery of the target and the south pole or poles at the
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`center of the target 9. One electrode, the anode, is formed by the electrically
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`conducting walls 5 of the housing 3, which e.g. can be grounded. The other
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`
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`

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`Application/Control Number: 10/065,277
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`Page 3
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`Art Unit: 1753
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`electrode, the cathode, is formed by the target 9, which is thus negatively biased in
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`relation to the anode. The substrate 13 can have some neutral electric potential. A gas
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`inlet for a suitable gas to be ionized such as argon is indicated at 21. (Page 9 lines 7-
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`20) It should be noted that the anode and cathode always have a gap in order to create
`
`the plasma.
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`(Applies to Applicant’s claim 41)
`
`When increasing the voltage form zero and on between the anode 5 and the
`
`cathode 9, there will for some applied voltage appear an electric glow discharge. The
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`gas in the region between the anode and the cathode will be partly ionized by
`
`electrons. The electrons will be somewhat trapped or confined by the magnetic field
`
`primarily moving in the areas of low magnetic field intensity. (Page 9 lines 21-25)
`
`Inherently ground state atoms exist because the gas is not ionized initially. Electrons
`
`are needed to ionize in the partially ionized state and the fully ionized state discussed
`
`below.
`
`(Applies to Applicant's claims 42, 43, 46 and 48)
`
`An electric discharge occurs between the cathode and the anode producing
`
`electrons trapped in the magnetic field by cooperation of the electric field produced by
`
`the applied voltage. (Page 4 lines 27-31)
`
`When increasing the voltage and current more, there will appear the state
`
`comprising completely ionized plasma region 27, the region being stationary located
`
`above the surface of the target 9 and having a larger extension laterally, in the direction
`
`of the surface of the target 9 than the regions 23 of high electron and ion density used in
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`ordinary sputtering. This state is made possible by the arrangement of the electric
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`and magnetic fields crossing each other in the magnetron configuration.
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`
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`

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`Application/Control Number: 10/065,277
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`Page 4
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`Art Unit: 1753
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`Furthermore, in this state, owing to the considerable extension and the relative
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`homogeneity and uniformity of the ionized plasma in the region 27, ions will hit the
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`target surface more regularly and uniformly distributed over the surface. This will
`
`result in a more homogeneous wear of the target surface, as illustrated by the area
`
`delimited by the dashed line 29 in Fig. 5b. (Page 10 lines 13-23)
`
`The power source is a pulse generator used primarily to produce coatings by
`
`sputtering. The power of each pulse can be in the range of 0.1 KW to 1 MW. The
`
`pulses can have a duration in the range of less than a hundred microseconds up
`
`to hundreds of microseconds and the intervals between pulses can range from
`
`milliseconds up to seconds. (Page 4 lines 14-23)
`
`The voltage can be hundreds of volts up to several kilovolts. (Page 6 lines 24-
`
`25) The rise time is calculated form the time and voltage discussed above.
`
`(Applies to
`
`Applicant's claims 44, 45, 49 and 50)
`
`The electric circuit will be generate at the frequency of the main supply typically
`
`with a frequency of 50 or 60 Hz. (Page 12 lines 14-15)
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`Alternating current is supplied from the power supply. (Page 6 lines 15-16)
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`Claims 1, 4, 5, 7, 13, 14, 16, 19-25, 27-29, 32, 33, 37 and 40 are rejected under
`
`35 U.S.C. 102(b) as being anticipated by Mozgrin et al. “High Current Low-Pressure
`
`Quasi-Stationary Discharge in a Magnetic Field: Experimental Research”, Plasma
`
`Physics Reports, Vol. 21, No. 5, 1995, pp. 400-409.
`
`Mozgrin et al. teach a sputtering system as seen in Figure 1 having a cathode
`
`(1), an anode (2) and a magnetic system (3). (See Figure 1 pp. 401)
`
`
`
`

`

`Application/Control Number: 10/065,277
`Art Unit: 1753
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`‘
`
`Page 5
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`Figure 2 presents a simplified scheme of the discharge supply system. The
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`supply unit involved a pulsed discharge supply unit and a system for pre-ionization.
`
`The quasi-stationary discharge supply unit consisted of a long line of W: 5.5 kJ
`
`maximal energy content, a switch and a matching unit. The pre-ionization system
`
`provided direct current. (Page 401)
`
`A gas of argon is pre-ionized at a pre-ionized plasma density of
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`107-109 cm'3. The pre-ionization could be provided by RF discharge, anomalous glow
`
`or magnetron discharge. (Page 401)
`
`A pulsed discharge is utilized to deposit copper material in argon plasma
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`with a plasma density of 3*1012 cm'3. The pulse duration was 25 ms with a
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`repetition frequency of 10 Hz. (Page 403-404)
`
`The current density for argon discharges can be 25 A/cmz. (Page 403)
`
`Claim Rejections - 35 USC § 103
`
`The following is a quotation of 35 U.S.C. 103(a) which forms the basis for all .
`
`obviousness rejections set forth in this Office action:
`
`(a) A patent may not be obtained though the invention is not identically disclosed or described as set
`forth in section 102 of this title, if the differences between the subject matter sought to be patented and
`the prior art are such that the subject matter as a whole would have been obvious at the time the
`invention was made to a person having ordinary skill in the art to which said subject matter pertains.
`Patentability shall not be negatived by the manner in which the invention was made.
`
`This application currently names joint inventors.
`
`In considering patentability of
`
`the claims under 35 U.S.C. 103(a), the examiner presumes that the subject matter of
`
`the various claims was commonly owned at the time any inventions covered therein
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`were made absent any evidence to the contrary. Applicant is advised of the obligation
`
`under 37 CFR 1.56 to point out the inventor and invention dates of each claim that was
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`

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`Application/Control Number: 10/065,277
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`Page 6
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`Art Unit: 1753
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`not commonly owned at the time a later invention was made in order for the examiner to
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`consider the applicability of 35 U.S.C. 103(c) and potential 35 U.S.C. 102(e), (f) or (9)
`
`prior art under 35 U.S.C. 103(a).
`
`Claims 1-3 are rejected under 35 U.S.C. 103(a) as being unpatentable over
`
`Kouznetsov (WO 98/40532).
`
`Kouznetsov is discussed above and all is as applies above.
`
`The differences between Kouznetsov and the present claims are that the
`
`constant power is not discussed and the constant voltage is not discussed.
`
`As to the constant power and the constant voltage Kouznetsov power supply
`
`provides this feature when operating in the crossed E and B field region since the power
`
`and voltage must be constant during this time period to produce a state of full ionization.
`
`(See Figure 1)
`
`The motivation for operating at constant power and constant voltage is that it
`
`allows production of full ionization during sputtering operation. (See Abstract; Figure 1)
`
`Therefore, it would have been obvious to one of ordinary skill in the art at the
`
`time the invention was made to have utilized constant power and voltage as taught by
`
`Kouznetsov because it allows for producing a state of full ionization.
`
`Claims 1-3, 17, 20 and 39 are rejected under 35 U.S.C. 103(a) as being
`
`unpatentable over Mozgrin et al. "High Current Low-Pressure Quasi-Stationary
`
`Discharge in a Magnetic Field: Experimental Research”, Plasma Physics Reports, Vol.
`
`21, No. 5, 1995, pp. 400-409.
`
`Mozgrin et al. is discussed above and all is as applies above.
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`

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`Application/Control Number: 10/065,277
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`Page 7
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`Art Unit: 1753
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`The differences between Mozgrin et al. and the present claims is that the
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`constant power is not discussed, the constant voltage is not discussed and the
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`ionization source being a UV source, an X-ray source, an electron beam source and an
`
`ion beam source is not discussed.
`
`As to the constant power and the constant voltage Mozgrin et al. teach pulsing in
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`square wave form which produces a constant power and constant voltage at the height
`
`of the square wave form in order to produce a plasma density higher than the pre-
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`ionization plasma density. (See page 401, 404)
`
`As to the ionization source for generating the weakly-ionized plasma the RF
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`discharge, anomalous glow or magnetron discharge, etc. is believed to be a source of
`
`ions and can be interpreted as a beam of ions. (See page 401)
`
`The motivation for utilizing a constant power and constant voltage is that it allows
`
`for production of a higher density of plasma than during the pre-ionization. (See page
`
`401, 404)
`
`The motivation for utilizing a separate ionization source is that it allows for the
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`necessary pre-ionization before producing the higher density plasma. (See page 401)
`
`Therefore, it would have been obvious to one of ordinary skill in the art at the
`
`time the invention was made to have modified Mozgrin et al. by utilizing a constant
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`power, constant voltage and an ionization source because it allows for production of a
`
`low density plasma before the production of a higher density plasma.
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`

`

`Application/Control Number: 10/065,277
`Art Unit: 1753
`
`Page 8
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`Claims 1, 10-12, 15, 20 and 34-36 are rejected under 35 U.S.C. 103(a) as being
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`unpatentable over Kouznetsov (WO 98/40532) in view of Chiang et al. (US. Pat.
`
`6,398,929).
`
`Kouznetsov is discussed above and all is as applies above. (See Kouznetsov
`
`discussed above)
`
`The differences between Kouznetsov and the present claims is that the
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`temperature control of the substrate is not discussed, biasing the substrate is not
`
`discussed and applying DC power to the target is not discussed.
`
`Chiang et al. teach a cool plasma ignition and processing sequence is illustrated
`
`in the flow diagram of FIG. 12. After the wafer has been inserted through the load lock
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`valve into the sputter reactor, the load lock valve is closed, and in step 190 gas
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`pressures are equilibrated. The argon chamber pressure is raised to that used for
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`ignition, typically between 2 and about 5 to 10 milliTorr, and the argon backside
`cooling gas is supplied to the back of the wafer at a backside pressure of about 5
`
`to 10 Torr. In step 192, the argon is ignited with a low level of target power, typically
`
`in the range of 1 to 5 kW. After the plasma has been detected to ignite, in step 194, the
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`chamber pressure is quickly ramped down, for example over 3s, with the target power
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`held at the low level. If sustained self-sputtering is planned, the chamber argon supply is
`
`turned off, but the plasma continues in the SSS mode. For self-ionized plasma
`
`sputtering, the argon supply is reduced. The backside cooling gas continues to be
`
`supplied. Once the argon pressure has been reduced, in step 196, the target power is
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`quickly ramped up to the intended sputtering level, for example, 10 to 24 kW or
`
`
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`

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`Application/Control Number: 10/065,277
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`Page 9
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`Art Unit: 1753
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`greater for a 200 mm wafer, chosen for the SIP or SSS sputtering. It is possible to
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`combine the steps 194, 196 by concurrently reducing pressure and ramping up the
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`power. In step 198, the target continues to be powered at the chosen level for a length
`
`of time necessary to sputter deposit the chosen thickness of material. This ignition
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`sequence is cooler than using the intended sputtering power level for ignition. The
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`higher argon pressure facilitates ignition but would deleteriously affect the sputtered
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`neutrals if continued at the higher power levels desired for sputter deposition. At the
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`lower ignition power, very little copper is deposited due to the low deposition rate at the
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`reduced power. Also, the pedestal cooling keep the wafer chilled through the
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`ignition process.
`
`(Column 16 lines 9-42)
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`The entire system can be controlled by a computer based controller.
`
`(Column 17 lines 39-45)
`
`Some designs utilize a controllable power supply 112 to apply a DC or RF bias
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`to the wafer holder. (Column 1 lines 45-46)
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`A DC power supply biases the target during sputtering.
`
`(Column 11 lines
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`37-40)
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`The motivation for controlling the temperature is that it allows for keeping the
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`substrate cool during ignition. (Column 16 lines 41-42)
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`The motivation for applying a bias to the substrate holder is that it allows control
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`of the DC bias that develops on the substrate.
`
`(Column 11 lines 45-48)
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`The motivation for utilizing a DC power source on the target is that it allows for
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`ignition and maintenance of the plasma. (Column 11 lines 37-40)
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`
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`

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`Application/Control Number: 10/065,277
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`Page 10
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`Art Unit: 1753
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`Therefore, it would have been obvious to one of ordinary skill in the art at the
`
`time the invention was made to have modified Kouznetsov by utilizing a temperature
`
`control, a bias to the substrate and dc power to the target as taught by Chiang et al.
`
`because it allows for keeping the substrate cool during ignition, controlling the DC bias
`
`that develops on the substrate and igniting and maintaining the plasma.
`
`Claims 1 and 18 are rejected under 35 U.S.C. 103(a) as being unpatentable over
`
`Kouznetsov (WO 98/40532) in view of Kadlec et al. (WO 95/04368).
`
`Kouznetsov is discussed above and all is as applies above. (See Kouznetsov
`
`discussed above)
`
`The difference between Kouznetsov and the present claims is that the use of an
`
`electromagnet is not discussed.
`
`Kadlec et al. teach igniting a discharge at a first power and then increasing the
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`power. (Page 8 lines 16-35; Page 9 lines 1-14)
`
`Kadlec further suggests the use of electromagnets for sputtering. (Page 14
`
`lines13-31)
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`The motivation for utilizing an electromagnet is that it allows control of the
`
`magnetic field such as controlling the magnetic field to disbalanced. (Page 14 lines 13-
`
`31)
`
`Therefore, it would have been obvious to one of'ordinary skill in the art at the
`
`time the invention was made to have modified Kouznetsov by utilizing an electromagnet
`
`as taught by Kadlec et al. because it allows for controlling the magnetic field.
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`Response to Arguments
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`

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`Application/Control Number: 10/065,277
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`Page 11
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`Art Unit: 1753
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`Applicant's arguments filed October 27, 2005 have been fully considered but they
`
`are not persuasive.
`
`In response to the argument that Koutznetsov does not teach choosing an
`
`amplitude and a rise time of the voltage pulse generated by the power supply to
`
`increase the excitation rate of ground state atoms that are present in the weakly-ionized
`
`plasma to generate a multi-step ionization process, it is argued that Koutznetsov teach
`
`utilizing a pulse which has an amplitude and a rise time and that such pulse will allow
`
`the plasma to go from a partially ionized state to a fully ionized state. (See Koutznetsov
`
`discussed above)
`
`In response to the argument that KoutznetSov teaches a power supply that
`
`generates a pulse in a very short time duration so that the gas reaches a fully ionized
`
`state through direct ionization but does not teach a power supply that results in a multi
`
`step ionization as required by Applicant, it is argued that Koutznetsov does teach a
`
`power supply that generates a pulse that allows the plasma to go through a multi-step
`
`ionization. Although the pulse is rapid the gas will still go through the states required by
`
`Applicant’s claims. (See Koutznetsov discussed above)
`
`In response to the argument that Koutznetsov does not teach a means for
`
`applying a voltage pulse to a weakly-ionized plasma, it is argued that Koutznetsov does
`
`teach a power source for applying a voltage pulse to a weakly ionized plasma. (See
`
`Koutznetsov discussed above)
`
`In response to the argument that Mozgrin does not teach choosing an amplitude
`
`and a rise time of the voltage pulse generated by the power supply to increase the
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`

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`Application/Control Number: 10/065,277
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`Page 12
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`Art Unit: 1753
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`excitation rate of ground state atoms that are present in the weakly-ionized plasma to
`
`generate a multi-step ionization process, it is argued that Mozgrin teach a pulse power
`
`supply that would increase the excitation rate of the ground state atoms that are present
`
`in the weakly ionized plasma (i.e. the pre-ionized gas) such that they are ionized to a
`
`fully ionized state. (See Mozgrin discussed above)
`
`In response to the argument that Mozgrin teaches a power supply that generates
`
`a pulse in a very short time duration so that the gas reaches a fully ionized state through
`
`direct ionization but does not teach a power supply that results in a multi step ionization
`
`as required by Applicant, it is argued that Mozgrin does teach a power supply that
`
`generates a pulse that allows the plasma to go through a multi-step ionization.
`
`Although the pulse is rapid the gas will still go through the states required by Applicant’s
`
`claims. (See Mozgrin discussed above)
`
`In response to the argument that Mozgrin does not teach a means for applying a
`
`voltage pulse to a weakly-ionized plasma, it is argued that Mozgrin’s power supply
`
`provides the pulse to the weakly-ionized plasma (i.e. per-ionized plasma). (See
`
`Mozgrin discussed above)
`
`Conclusion
`
`All claims are drawn to the same invention claimed in the application prior to the
`
`entry of the submission under 37 CFR 1.114 and could have been finally rejected on the
`
`grounds and art of record in the next Office action if they had been entered in the
`
`application prior to entry under 37 CFR 1.114. Accordingly, THIS ACTION IS MADE
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`FINAL even though it is a first action after the filing of a request for continued
`
`

`

`Application/Control Number: 10/065,277
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`Page 13
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`Art Unit: 1753
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`examination and the submission under 37 CFR 1.114. See MPEP § 706.07(b).
`
`Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a).
`
`A shortened statutory period for reply to this final action is set to expire THREE
`
`MONTHS from the mailing date of this action.
`
`In the event a first reply is filed within
`
`TWO MONTHS of the mailing date of this final action and the advisory action is not
`
`mailed until after the end of the THREE-MONTH shortened statutory period, then the
`
`shortened statutory period will expire on the date the advisory action is mailed, and any
`
`extension fee pursuant to 37 CFR 1.136(3) will be calculated from the mailing date of
`
`the advisory action. In no event, however, will the statutory period for reply expire later
`
`than SIX MONTHS from the mailing date of this final action.
`
`Any inquiry concerning this communication or earlier communications from the
`
`examiner should be directed to Rodney G. McDonald whose telephone number is 571-
`
`272-1340. The examiner can normally be reached on M- Th with Every other Friday off.
`
`If attempts to reach the examiner by telephone are unsuccessful, the examiner’s
`
`supervisor, Nam X. Nguyen can be reached on 571-272-1342. The fax phone number
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`for the organization where this application or proceeding is assigned is 571-273-8300.
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`
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`

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`Application/Control Number: 10/065,277
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`Page 14
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`Art Unit: 1753
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`Information regarding the status of an application may be obtained from the
`
`Patent Application Information Retrieval (PAIR) system. Status information for
`
`published applications may be obtained from either Private PAIR or Public PAIR.
`
`Status information for unpublished applications is available through Private PAlR only.
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`For more information about the PAIR system, see httpz/lpair-direct.uspto.gov. Should
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`you have questions on access to the Private PAIR system, contact the Electronic
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`Business Center (EBC) at 866-217-9197 (toll-free). W
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`Rodney G. McDonald
`Primary Examiner
`Art Unit 1753
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`RM
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`January 6, 2006
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