`
`IN THE UNITED STATES PATENT AND TRADEMARK OFFICE
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`PATENT APPLICATION
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`In re Application of:
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`Joseph Neev
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`Serial No.: 09/632,199
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`Filed: August 2, 2000
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`.
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`Patent Examrner: Peter J. Vr
`.
`ArtUmt: 3739
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`For: METHOD AND APPARATUS FOR
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`April 12, 2002
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`HIGH PRECISION VARIABLE RATE
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`Irvine, California 92614
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`MATERIAL REMOVAL AND
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`MODIFICATION
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`RESPONSE TO OFFICE ACTION
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`Assistant Commissioner for Patents
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`Washington, DC. 20231
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`Dear Sir:
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`'4
`03%
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`Responsive to the Office Action of January 2, 2002, kindly consider the new
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`Information Disclosure Statement submitted herewith and the following remarks.
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`‘ REMARKS
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`Claims 35-38 and 55—66 remain in the application.
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`Applicant respectfully
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`requests reconsideration. A request for one month extension of time is enclosed.
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`Claims 35-38 and 55-56 were rejected under 35 U.S.C. Section 102(e) as being
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`anticipated by Neev, et al. (5,720,894). Applicant respectfully traverses.
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`The Neev, et al. ‘894 patent is directed to a method and apparatus for damage-free
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`biological tissue removal b using an ultra-short pulse duration laser that is operating at a
`_,____________
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`Alcon Research, Ltd.
`Exhibit 1012 - Page 1
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`Alcon Research, Ltd.
`Exhibit 1012 - Page 1
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`high pulse repetition rate with the duration of each pulse being in the order of about 1
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`femtosecond to less than 50 picoseconds so that energy deposition is localized to a small
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`depth and occurs before significant hydrodynamic motion and thermal conduction which
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`WW
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`The invention of the present application is directed to a method for controlled
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`variable
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`rate material modification by controlling the power density of the
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`electromagnetic radiation beam. The electromagnetic radiation beam may come from a
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`continuous wave (CW) source or a pulsed‘source. The material modification includes a
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`range of chemical and physical changes in the material, besides tissue removal.
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`Specifically, Claim 35 recites “control of power density is achieved by varying
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`either one or more of the following parameters: . .. by spatially and temporally varying the
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`absorption and/or scattering characteristics of the material at the targeted region”. The
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`Neev, er a]. ‘894 patent does not teach or contemplate achieving control of power density
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`' by spatially and temporally varying the absorption and/or scattering characteristics of the
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`material at the targeted range. Claim 35 further requires “allowing interaction energy
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`transients caused by the electromagnetic radiation pulse to substantially decay so that
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`material modification is affected”. The Neev, et al. ‘894 patent does not teach nor does it
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`contemplate allowing interaction energy transients caused by the electromagnetic
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`radiation pulses to substantially decay so that material modification is affected. Such
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`interaction energy transients, which may include transient chemical or thermal or
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`mechanical changes tend to interfere with the next pulse effect if present.
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`The Neev, er al. ‘894 patent only contemplates oblation of tissue. The present
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`invention, on the other hand, contemplates material modification which includes not only
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`Alcon Research, Ltd.
`Exhibit 1012 - Page 2
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`Alcon Research, Ltd.
`Exhibit 1012 - Page 2
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`ablation, but one or more of the following material alterations:
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`chemical changes,
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`physical changes, changes to viscoelastic properties, changes to optical properties,
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`thermal properties, chemical and physical breakdown, disintegration, melting and
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`vaporization.
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`Claim 35 fiirther requires “operating the pulse source at a pulse repetition rate
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`greater than 0.1 pulses per second”. The Neev, et al. ‘894 patent recommends a pulse
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`repetition rate of 10 hertz to 1000 hertz. The pulse rate of 0.1 pulses per second (0.1
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`hertz) is two orders of magnitude smaller than the Neev, et al. ‘894 lower frequency of its
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`range.
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`Claim 37 requires adding scattering and/or absorption centers, defects, or highly
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`absorbent components, to the target material with spatial and/or temporal selectivity to
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`specific predetermined locations within the target material. Neither the Neev, et al. ‘894
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`patent, nor any of the references of record disclose or contemplate this step.
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`The Office Action concludes that it would be inherent that the power density
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`range of Claim 55 and the average power range in Claim 62 could be determined through
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`routine experimentation using other parameters disclosed throughout the Neev, et al. ‘894
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`patent. Applicant respectfiilly traverses. The Neev, et al. ‘894 patent contemplates use of -
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`very high peak power pulses generated by a laser class known as “ultra-short pulse
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`laSers”. The laser pulses range in duration from 1 femtosecond to about 100 picoseconds.
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`There is only one purpose for these pulses, to ablate the tissue. The invention of the
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`present application on the other hand, contemplates material modification by utilizing
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`pulse repetition rate changes, which are outside the Neev, et al. ‘894 pulse range. The
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`material modification contemplated by the invention of the present application, although
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`Alcon Research, Ltd.
`Exhibit 1012 - Page 3
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`Alcon Research, Ltd.
`Exhibit 1012 - Page 3
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`including ablation, utilizes a pulse duration that
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`is much longer, over 10 orders of
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`magnitude longer, than the pulses of the Neev, et al.
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`‘894 patent, all the way up to
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`continuous waves.
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`The Ofiice Action points to C01. 6, lines 1-14 for the conclusion that the Neev, et
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`al. ‘894 patent indicates that a threshold volumetric power density can be achieved at a
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`desired location below the material surface. Applicant respectfully traverses. This
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`portion of Neev, et al. ‘894 is simply talking about a microscopic insignificant depth,
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`from a real world prospective of approximately one micrometer. The invention of the
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`present application on the other hand,
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`is concerned with depth ranging from a few
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`micrometers up to several centimeters. This is again a factor of four to five orders of
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`magnitude greater than that contemplated in the Neev, et al. ‘894 patent. Moreover, the
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`Neev, et al. ‘894 patent contemplates elimination of energy deposition below that one
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`micrometer depth when it states “formation of a critical density plasma by both multi-
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`photon and collusional
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`ionization processes eliminates significant energy deposition
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`below a depth of approximately that of a wavelength of the laser light when energy
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`deposition...
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`. Clearly, the Neev, et al.
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`‘894 patent does not teach nor contemplate
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`volumetric power density at a desired location below the material surface.
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`Claims 55-66 define an invention that utilizes a continuous wave beam to achieve
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`a high precision, highly controllable, variable rate material removal by use of an
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`continuous wave (CW) beam of electromagnetic radiation wherein the interaction
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`between the electromagnetic radiation and the material is such that the material removal
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`depth is approximately equal to the energy deposition depth within the target material.
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`The Neev, et al. ‘894 patent does not contemplate this structure or fimction. Moreover,
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`Alcon Research, Ltd.
`Exhibit 1012 - Page 4
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`Alcon Research, Ltd.
`Exhibit 1012 - Page 4
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`the Zair (5,411,502) patent while directed to a system for causing ablation of irradiated
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`material of living tissue is concerned with “not causing necrosis below a predetermined
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`depth”. The Zair patent does not teach or contemplate a material removal depth which is
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`approximately equal to the energy deposition depth within a target material. The Zair
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`patent utilizes a system that moves the energy beam around while ablating the living
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`tissue to control the dwell time of the beam on a given tissue site in order to not cause
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`necrosis below a predetermined depth. The energy from the laser beam deposited in the
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`tissue ablated and thermal damage to the tissue ' is supposed to be limited to a
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`predetermined depth. The invention of the present application, on the other hand,
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`generates parameters that allow material
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`removal
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`that
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`results in selected energy
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`deposition depths while substantially eliminating all collateral damage. The two concepts
`are clearly different.
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`/ Claims 55-66 are directed to the use of a continuous wave source which is
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`manipulated to distribute it in place. The Neev, et al. ‘894 patent discloses an oscillator
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`and a pulse stretcher to provide a pulse having the same or shorter pulse duration than the
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`desired pulse duration. However,
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`the Neev, et al.
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`‘894 patent does not teach or
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`contemplate redistributing a continuous beam. The beam time duration characteristics
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`are changed, but not the beam location (that is, where the laser source is pointing). The
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`oscillator and pulse stretches of Neev, et al.
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`‘894 are part of the energy source that
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`provides at its output the sequence of short pulses to be directed to a target. Although the
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`Neev, et al. ‘894 patent contemplates using the Kerr effect as part of the energy source,
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`i.e., the laser, the Kerr effect is used to generate short pulses.
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`Alcon Research, Ltd.
`Exhibit 1012 - Page 5
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`Alcon Research, Ltd.
`Exhibit 1012 - Page 5
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`O
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`C
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`There are fimdamental differences between the Neev, et a].
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`‘894 patent system
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`and the invention of the present application. The beam characteristics, i.e., time duration,
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`frequency content, spatial location of frequency, and wavelength content in the beam, are
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`not changed in the invention of the present application as they are in the Neev, et al. ‘894
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`patent. In the invention of the present application, the spatial location of the beam at the
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`target is changed in time to manipulate the distribution of the constant beam output at a
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`specific place on the target, so the beam itself is never affected, only its location on the
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`target tissue is changed. The Neev, et al. ‘894 patent does not teach or even contemplate
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`the use of a continuous wave source, let alone such a manipulation of the continuous
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`wave beam. The Neev, et al. ‘894 patent specifically limits its source to pulses of up to
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`100 ps. Moreover,
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`in the invention of the present application,
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`the Kerr effect
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`is
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`contemplated as an external element to the energy source as part of the system design to
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`change the beam time and space locations on the target.
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`The Neev, et al,
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`‘894 patent contemplates changing the beam energy time
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`distribution by stretching and then recompressing a pulse beam source. The invention of
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`the present application, on the other hand, redistributes a fixed, continuous wave beam,
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`i.e., the beam always remains a continuous wave source, which is entirely different from
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`a pulsed energy beam. This continuous wave beam is redistributed in both time and
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`space at its location on the target to form at least one modified beam comprising a
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`plurality of pulses.
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`In other words, the present
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`invention achieves pulsing not by
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`changing the beam characteristics, but rather by constructing a system that is able to
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`control and change the continuous wave beam location on the target. The Neev, et a].
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`‘894 patent only allows an operator to change the beam location manually, by moving it
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`Alcon Research, Ltd.
`Exhibit 1012 - Page 6
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`Alcon Research, Ltd.
`Exhibit 1012 - Page 6
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`from one target location to the other. The Neev, et al. ‘894 patent disclosure does not
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`teach or contemplate a means for pulsing the system by changing its location at the target
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`or by controlling the output beam spatial or temporal characteristics. Focusing elements,
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`Such as a hollow wave guide or articulated arm will not change the pulse structure of the
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`Neev, et al.
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`‘894 patent beam. The invention of the present application, however,
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`contemplates affecting pulsing of its continuous wave beam by having, for example, at
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`least one optical fiber and at least one hollow wave guide light conductor, so that by
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`moving the source output beam from one to the other, a pulse effect is created. The
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`optical fiber, or hollow wave guide contemplated by the Neev, et al. ‘894 patent is there
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`simply to deliver an already finalized pulsed output beam to its final target location. The
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`two concepts are fimdamentally different.
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`In light of the above amendment and remarks, Applicant believes that all the
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`claims are allowable in light of the art of record and respectfully requests that this
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`application be passed to issue.
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`this correspondence is
`I hereby certify that
`being sent via Express Mail (EV 034864779
`US) in an envelope addressed to the Assistant
`Commissioner for Patents, Washington, DC.
`20231 on April 12, 2002.
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`Respectfully submitted,
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`PRICE AND GESS
`
`( 2%b
`By: MarcFregoso
`MM— Registration No. 25,726
`Signature
`2100 SE. Main St., Suite 250
`Irvine, California 92614
`Telephone: 949/261-8433
`
`Albin H. Gess
`
`Date: April 12, 2002
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`Alcon Research, Ltd.
`Exhibit 1012 - Page 7
`
`Alcon Research, Ltd.
`Exhibit 1012 - Page 7
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