`
` PART 2 (SIGNATURE AND ERRATA)
`
`INNOLUX CORP. v. PATENT OF SEMICONDUCTOR ENERGY
`LABORATORY CO., LTD.
`
`IPR2013-00038
`
`
`
`Page 201
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`I, MILTIADIS HATALIS, Ph.D., do hereby declare
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`under penalty of perjury that I have read the
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`foregoing transcript;
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`that I have made such
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`corrections as appear noted herein,
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`in ink,
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`initialed
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`by me, or attached hereto;
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`that my testimony as
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`contained herein, as corrected,
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`is true and correct.
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`EXECUTED this _\i_ day of
`0"\€-
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`2013, at
`?>e\\«\\€_\'\€.\A/\
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`?C.Ag$>‘ \\1qv\{o,¢
`
`(City)
`
`(State)
`
`MILTIADIS HATALIS, Ph.D.
`
`VOLUME I
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`©\DG)\'|O\U'|»bL»Jl\)}'-‘
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`|—‘
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`F-‘ F-‘
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`I--* N
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`25
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`312-442-9087
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`Veritext Chicago Reporting Company
`800-248-3290
`
`847-406-3200
`
`
`
`Case Name: Innolux Corporation v. Semiconductor Energy Laboratory Co., Ltd.
`Case No.: IPR2013-00038 / Patent 7,956,978
`Date: May 20, 2013
`Job No. 1665084
`
`Changes/Corrections to the Deposition Transcript of Miltiadis Hatalis Ph.D.
`
`Change from:
`
`Change to:
`
`Gregg
`
`Upland
`
`4 of 2012
`
`metrics
`
`metrics
`
`referring
`
`If
`
`magnet
`
`and the voltage
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`maybe
`
`Silicone
`
`its
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`to have
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`thickened
`
`thickened
`
`thickened
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`Greg
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`Oblon
`
`fall of 2012
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`matrix
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`matrix
`
`referred
`
`In
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`magnitude
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`of the voltage
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`may
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`silicon
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`each
`
`we have
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`thickest
`
`thickest
`
`thickest
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`Page :
`Line(s)
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`7:10
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`12:17
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`13:6
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`13:20
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`14:17
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`17:7
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`23:1
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`23:5
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`23:6
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`26:8
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`32
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`(replace
`throughout
`transcript)
`
`35:16
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`55:3
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`57:25
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`58:1
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`58:21
`
`LA 9615893v1
`
`
`
`Case Name: Innolux Corporation v. Semiconductor Energy Laboratory Co., Ltd.
`Case No.: IPR2013-00038 / Patent 7,956,978
`Date: May 20, 2013
`Job No. 1665084
`
`Changes/Corrections to the Deposition Transcript of Miltiadis Hatalis Ph.D.
`
`Change from:
`
`Change to:
`
`scan line
`
`gate line
`
`holes in
`
`bus
`
`he talks
`
`the photoresist
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`photoresist
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`the
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`the CMOS
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`inverter
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`doping
`
`of one
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`inverter
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`inverter
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`two shift registers
`
`two inverters
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`inverted due to the geometry
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`inverter with different geometry
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`buss
`
`line 8 prime
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`bus
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`line 8, 8 prime
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`2
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`skyline
`
`guideline
`
`a host
`
`buss
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`the talks
`
`the photo lithosis
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`photo
`
`te
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`the ones
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`convertor
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`topping
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`134:25
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`to one
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`breaker
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`in breaker
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`Page :
`Line(s)
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`59:14
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`59:15
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`59:23
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`64:5
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`(twice in
`same
`sentence)
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`80:15
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`104:8
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`104:11
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`114:4
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`115:21
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`117:8
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`125:1
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`135:1
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`135:1
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`136:1
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`136:5
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`146:17
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`153:9
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`LA 9615893v1
`
`
`
`Case Name: Innolux Corporation v. Semiconductor Energy Laboratory Co., Ltd.
`Case No.: IPR2013-00038 / Patent 7,956,978
`Date: May 20, 2013
`Job No. 1665084
`
`Changes/Corrections to the Deposition Transcript of Miltiadis Hatalis Ph.D.
`
`Change from:
`
`Change to:
`
`Page :
`Line(s)
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`153:18
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`155:21
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`156:22
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`158:4
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`158:9
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`158:12
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`162:8
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`(twice in
`same
`sentence)
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`point 8A prime
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`taking
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`polysilicone
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`silicone insulator
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`silicone insulator
`
`deposit
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`masked set
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`point 8, 8 prime
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`talking
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`porous silicon
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`Silicon On Insulator (SOI)
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`Silicon On Insulator
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`deposited
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`mask set
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`highlighted
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`formed
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`signal
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`with the way
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`that
`
`signal
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`signal
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`can
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`178:18
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`handled
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`179:2
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`183:8
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`191:12
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`191:13
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`199:11
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`199:12
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`199:18
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`from
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`sealing
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`without
`
`what
`
`scanning
`
`scanning
`
`cannot
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`LA 9615893v1
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`3
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`
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`CERTIFICATE OF SERVICE
`
`I certify that the foregoing Exhibit 2012, part 2 (signature page and errata)
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`were served on the Petitioner by Federal Express Standard Overnight at
`
`the
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`following addresses on June 26, 2013.
`
`Scott A. McKeown
`
`Oblon, Spivak, McC1elland, Maier & Neustadt, L.L.P.
`1940 Duke Street
`
`Alexandria, VA 22314
`
`Gregory S. Cordrey
`Jeffer Mangels Butler & Mitchell LLP
`3 Park Plaza, Suite 1100
`
`Irvine, CA 92614-2592
`
`Stanley Gibson
`Jeffer Mangels Butler & Mitchell LLP
`3 Park Plaza, Suite 1100
`
`Irvine, CA 92614—2592
`
`in