Exhibit 1002 (continued)
`Exhibit 1002 (continued)
`
`

`
`<0
`
`conducting film by selectively leaving the dielectric film;
`a second conducting film covering said opening portion;
`
`a third conducting film formed over a second substrate;
`and a plurality of conducting spacers held between said first and second
`
`substrates and maintaining a gap between first and second substrates;
`
`wherein said opening portion, said first conducting film and said second
`
`conducting film are connected;
`
`and wherein said insulator on the said opening portion, said conducting spacers
`
`and said third conducting film are connected in turn on said second dielectric film,
`
`wherein said conducting spacers maintain a gap between said first and second
`
`substrates.
`
`[Claim 5]
`
`The contact structure of claim 4 wherein said dielectric film and said insulator
`
`are substantially identical in thickness.
`
`[Claim 6]
`The contact structure of claim 4 or 5 wherein each of said parts of said opening
`
`portion has an area larger than an area occupied by each of said conducting spacers.
`
`[Claim 7]
`
`The contact structure of claim 4 or 6 wherein said insulator has a surface larger
`
`than an area occupied by each of said conducting spacers.
`
`[Claim 8]
`The contact structure of claim 1 or 7 further comprising a fourth conducting
`
`film placed between said second substrate and said third conducting film and being in
`
`contact with said third conducting film.
`
`[Claim 9]
`
`The contact structure of claim 8 wherein said second substrate and said third
`
`conducting film are transparent to light, and wherein said fourth conducting film has at
`
`least one opening.
`
`[Claim 10]
`
`A contact structure of an electro-optical device comprising:
`
`a second substrate opposite to said first substrate;
`
`Received from < 703+331i+03?0 > at 1216101 11:15:47 AM [Eastern Standard lime]
`
`Exhibit 1002, page 185
`
`

`
`90
`
`a pixel electrode formed over said first substrate;
`
`a counter electrode formed over said second substrate;
`
`a first conducting film formed over said first substrate and under said pixel
`
`electrode;
`
`a interlayer dielectric film covering at least a portion of said first conducting
`film and having at least one. opening portion formed in the dielectric film to expose
`parts of said
`first conducting film by selectively leaving the dielectric fi1m;i
`a third conducting film covering said interlayer dielectric film and said opening
`
`portion, said third conducting film and said pixel electrode comprising same material;
`
`a plurality of conducting spacers held between said first and second substrates
`
`and maintaining a gap between said first and second substrates;
`
`and wherein said first and second conducting films are contacted at said
`
`opening portion, wherein said dielectric film, said conducting spacers and said third
`
`conducting film are connected in turn on said second conducting film, wherein said
`
`conducting spacers maintain a gap between said first and second substrates.
`
`[Claim 11]
`
`The contact structure of claim 10 wherein said opening portion occupies an
`
`area larger than an area occupied by each of said conducting spacers.
`
`[Claim 12]
`
`The Contact structure of claim 10 or 11 said interlayer dielectric film a surface
`
`larger than an area occupied by each of said conducting spacers.
`
`[Claim 13]
`
`A contact structure of an electro-optical device comprising:
`
`a second substrate opposite to said first substrate;
`
`a pixel electrode formed on said first substrate;
`
`a counter electrode formed over said second substrate;
`
`a first conducting film formed over said first substrate and under said pixel
`
`electrode;
`
`a interlayer dielectric film covering at least a portion of said first conducting
`
`film and having an opening portion to expose a portion of said first conducting film,
`and said opening portion formed in the dielectric film to expose parts of the
`
`Reteivedlmm<7D3+38l+0370>aI12lfil01 11 :15:4? RM [Eastern Standard Time]
`
`-4.
`
`Exhibit 1002, page 186
`
`

`
`Q
`
`first conducting film by selectively leaving the dielectric film;
`a second conducting film covering saidfirst and second dielectric film and said
`
`opening portion, said second conducting films and said pixel electrode comprising same
`
`material;
`
`a plurality of conducting spacers held between said first and second substrates
`
`and maintaining a gap between said first and second substrates;
`
`wherein said first and second conducting films are contacted at said parts of
`
`said opening portion,
`
`and wherein said insulator, said conducting spacers and said third conducting
`
`film are contacted at said parts of said second dielectric film, wherein said second
`
`conducting film, said conducting spacers and said counter electrode are connected in
`turn on said second dielectric film, wherein said conducting spacers maintain a gap
`
`between said first and second substrates.
`
`[Claim 14]
`
`The contact structure of claim 13 wherein said interlayer dielectric film and
`
`said insulator are substantially identical in thickness.
`
`[Claim 15]
`
`The contact structure of claim 13 or 14 wherein each of said parts of said
`
`opening portion has an area larger than an area occupied by each of said conducting
`
`spacers.
`
`[Claim 16]
`
`The contact structure of claim 13 or 15 wherein said insulator has a surface
`
`larger than an area occupied by each of said conducting spacers.
`
`[Claim 17]
`
`The contact structure of claim 13 or 16 further comprising a forth conducting
`
`film placed between said second substrate and said third conduction film and being in
`
`Contact with said third conducting film.
`
`[Claim 18]
`The contact structure of claim 17 further comprising a black matrix. wherein
`
`said third conducting film and said black matrix comprise same material.
`
`[Claim 19]
`
`Received from <103+883+0370> at 1216101 11:15:17 AM [Eastern S1andardTime]
`
`Exhibit 1002, page 187
`
`

`
`=0
`
`The contact structure of claim 17 or 18 wherein said second substrate and said
`
`third conducting film are transparent to light, and wherein said forth conducting film
`
`has at least one opening.
`
`[Claim 20]
`
`A contact structureof an electro-optical device comprising:
`
`a first conducting film formed over a first substrate;
`
`a dielectric film covering at least a portion of said first conducting film and
`
`having at least one opening portion to expose parts of said first conducting film;
`
`a second conducting film covering said opening portion;
`
`a third conducting film formed over a second substrate;
`
`a fourth conducting film formed between said second substrate and said third
`
`conducting film and being in contact with said third conducting film;
`
`and a plurality of conducting spacers held between said first and second
`
`substrates, wherein said conducting spacers maintain a gap between said first and
`
`second substrates;
`wherein said opening portion, said second conducting film, said conducting
`
`spacers, said third conducting film and said forth conducting film are connected in turn
`
`on the first conducting film.
`
`[Detailed Description of the Invention]
`
`[0001]
`
`[Technical Field to which the Invention pertains]
`The present invention relates to a Contact structure for electrically connecting
`
`together conducting lines formed on two opposite substrates, respectively, via
`conducting spacers and, more particularly,
`to a contact structure used in common
`
`contacts of an electro-optic device such as a liquid crystal display.
`
`[0002]
`
`[Prior Art]
`In recent years,
`liquid crystal displays have been extensively used in the
`display portions of mobile intelligent terminals such as mobile computers and portable
`telephones including PHS (personal handyphone system). Also, active-matrix liquid
`
`crystal displays using IFIS as switching elements are well known.
`
`Received from < 703+383+0370 > at 1216101 11:15:47 AM [Eastern Standard Time]
`
`-6.
`
`Exhibit 1002, page 188
`
`

`
`‘Q
`
`[0003]
`
`A liquid crystal display comprises two substrates and a liquid crystal material
`
`sealed between them. Electrodes are formed on these two substrates to set up electric
`
`fields.
`
`A desired image or pattern is displayed by controlling the magnitudes of these
`
`electric fields.
`
`In the active-matrix liquid crystal display, TI-‘Ts (thin-film transistors)
`
`are formed on one substrate to control the supply of voltage to each pixel electrode.
`Therefore, this substrate is referred to as the ‘EFT substrate. A counter electrode placed
`
`opposite to the pixel electrodes is formed on the other substrate and so it is referred to as
`
`the counter substrate.
`
`[0004]
`
`In the active matrix display, an electric field is produced between each pixel
`
`electrode on the TFI‘ substrate and the counter electrode on the counter substrate, thus
`
`providing a display. The potential at each pixel electrode on the TFT substrate is
`
`controlled by the TH‘ and thus is varied. On the other hand, the counter
`
`electrode on
`
`the counter substrate is clamped at a common potential.
`
`For this purpose, the counter
`
`electrode is connected with an extractor terminal via a common contact formed on the
`
`TFT substrate. This extractor terminal is connected with an external power supply.
`
`This connection structure clamps the counter electrode at the common potential.
`
`[0005]
`
`The structure of the common contact of the prior art active-matrix liquid crystal
`
`display is next described briefly by referring to FIGS. l2~l4.
`
`[0006]
`
`FIG. 12 is'a top plan view of a TF1‘ substrate 10. This TF1‘ substrate
`
`comprises a substrate 11 having a pixel region 12, a scanning line driver circuit 13, and
`
`a signal
`
`line driver circuit 14.
`
`lo the pixel region 12, pixel electrodes and TFTS
`
`connected with the pixel electrodes are arranged in rows and columns. The scanning
`
`line driver circuit 13 controls the tinting at which each Tl-T is turned on and off. The
`
`signal line driver circuit 14 supplies image data to the pixel electrodes. Furthermore,
`
`there are extractor terminals 15 to supply electric power and control signals from the
`
`outside. The substrate 11 makes connection with the counter electrode at common
`
`contact portions 16a~16d.
`
`Received from < ?03+883+1l370 > at 12161111 11:15:47 AM [Eastern standard Time]
`
`Exhibit 1002, page 189
`
`

`
`0./'
`
`Q
`
`[0007]
`
`FIG. 13 is a cross-sectional view of the pixel region 11 and a common contact
`
`portion 15. A TFT 17 and many other TFTS (not shown) are fabricated in the pixel
`
`region 12 on the substrate 10. An interlayer dielectric film 18 is deposited on the TFT
`
`17. A pixel electrode 19 connected with the drain electrode of the TFT 17 is formed
`
`on the interlayer dielectric film 18.
`
`[0008]
`
`A precursor for the source and drain electrodes of the TFT 17 is patterned into
`
`internal conducting lines 21 at the common contact portion 16. The interlayer dielectric
`
`film 18 is provided with a rectangular opening. A conducting pad 22 is formed inthis
`
`opening and connected with the internal conducting lines 21. The pixel electrode 19
`
`and the conducting pad 22 are patterned from the same starting film.
`
`[0009]
`
`FIG. 14 is a top plan view of the known common contact portion 16. A
`
`region located inside the conducting pad 22 and indicated by the vroken line
`
`corresponds to the opening formed in the interlayer dielectric film 18.
`
`[0010]
`
`As shown in FIG. 13, a counter electrode 24 consisting of a transparent
`
`conducting film is formed on the surface of a counter substrate 23. This counter
`
`electrode 24 is opposite to the pixel electrodes 19 in the pixel region 12 and to the
`
`conducting pad 22 at the common contact portion 16.
`
`[0011]
`
`Spherical insulating spacers 25 are located in the pixel region 12 to maintain
`
`the spacing between the substrates 11 and 23. A spherical conducting spacer 26 is
`
`positioned at
`
`the common contact portion 16 and electrically connects the counter
`
`electrode 24 with the conducting pad 22. The pad 22 is electrically connected with the
`
`internal conducting lines 21, which in turn are electrically connected with an extractor
`
`terminal 14. This connection structure connects the counter electrode 24 on the
`
`counter substrate 23 with the extractor tenninal 14 on the substrate 10.
`
`[0012]
`
`[Problem to be Solved by the Invention]
`
`-3-
`
`Received front < l03+B83+03i0 > at M6101 11:15:47 All [Eastern Standard Time]
`
`Exhibit 1002, page 190
`
`

`
`Q
`
`.
`
`Q
`
`In the prior art
`
`liquid crystal display,
`
`the interlayer dielectric film 18 is
`
`provided with the opening at the common Contact portion 16, as shown in FIG. 13.
`
`Therefore, the cell gap Go in the common contact portion is almost equal to the sum of
`
`the cell gap Gp in the pixel region + the film thickness tot‘ the interlayer dielectric film
`18.
`
`[0013]
`
`The cell gap Gp (also known as the cell spacing) in the pixel region 12 is
`
`determined by the insulating spacers 25.
`It is common practice to use standardized
`spacers as the insulating spacers 25 and so if the spacers 25 have a uniform diameter,
`
`the cell gap Gp in the pixel region 12 is substantially uniform among liquid-crystal cells.
`However, it is difficult to avoid nonuniformity of the cell gap Go in the common Contact
`
`portion among liquid-crystal cells.
`
`[0014]
`
`The cell gap Gc in the common Contact portion is constant since the cell gap
`
`Gp is constant because of the relation described above. Therefore, the cell gap Gc in the
`
`common contact portion depends only on the film thickness t of the interlayer dielectric
`
`film 18. Consequently, to make the cell gap Gc uniform among liquid-crystal cells, it
`
`is necessary that the film thickness t of this interlayer dielectric film 18 be uniform
`
`among cells. However, this is impossible to circumvent.
`
`[0015]
`
`Normally, the common contact portions of the liquid crystal display are 2 to 4
`
`in number. The film thickness t of the interlayer dielectric film 18 may differ from
`
`location to location on the same substrate.
`
`In this case, the film thickness t may differ
`
`among different common contacts even on the same substrate.
`
`[0016]
`
`Because of the aforementioned nonuniformity of the thickness t of the
`
`interlayer dielectric film 18, the cell gap Gc in the common contact portion differs
`
`among different cells or different common contacts. Furthermore, the nonuniformity of
`
`the cell gap Gc results in the cell gap Gp in the pixel region to be nonuniform.
`
`[0017]
`
`The cell gap Gp in the pixel region is affected more by the nonuniformity of
`
`Received from < 703+333-#0370 > at 1216l01 11:15:47 AM [Eastern Standard Time]
`
`-9-
`
`Exhibit 1002, page 191
`
`

`
`0/
`
`t0
`
`the cell gap Gc in the common contact portion as the area of the pixel region 12
`. becomes narrower than the area of the common contact portion. Especially, in the case
`of a projection display as used in a projector,
`the problem of above-described
`
`nonuniformity of the cell gap Gp in the pixel region becomes conspicuous, because it is
`
`a quite accurate small-sized display of about 1 to 2 inches.
`
`[0018]
`
`A standardized spacer is also used as the conducting spacer 26. The diameter
`
`of this conducting spacer 26 is determined by the diameter of the insulating spacers 25
`
`in the pixel region 12 and by the design thickness of the interlayer dielectric film 18.
`
`Where the thickness of the interlayer dielectric film 18 is much larger than the designed
`
`value, the cell gap Go in the common contact portion becomes very large. This makes
`
`it impossible to connect the counter electrode with the conducting pad well by the
`
`conducting spacer 26.
`
`In consequence, the counter electrode cannot be clamped at the
`
`common potential. As a result, a display cannot be provided.
`
`[0019]
`
`It is an object of the present invention to provide a contact structure which is
`
`free of the foregoing problems, provides less nonuniform cell gap among different cells
`
`it‘ the thickness of the interlayer dielectric film is nonuniform across the cell or among
`
`different cells, and reduces poor electrical contacts which would normally be caused by
`
`conducting spacers.
`
`[0020]
`[Means for Solving the Problem]
`
`_
`
`This object is achieved in accordance with the teachings of the invention by a
`
`contact structure for connecting a conducting film formed on a First substrate with a
`
`conducting film formed on a second substrate opposite to the first substrate, the contact
`
`structure comprising: a cell gap defined between the first and second substrates; a first
`
`conducting film formed on the first substrate; a dielectric film covering the first
`
`conducting film; openings formed in the dielectric film to expose parts of the first
`
`conducting film by selectively leaving the dielectric film; a second conducting film
`
`covering the dielectric film left and the openings; at third conducting film formed on the
`
`second substrate; and conducting spacers held between the first and second substrates
`
`Received from < ?03+883'l03T0 > at 12lfi101 11:15:47 AM [Eastern Standard lime]
`
`.10.
`
`Exhibit 1002, page 192
`
`

`
`Q
`
`-Q
`
`and connecting the second and third conducting films. The second conducting film is
`connected with the first conducting film through the openings. The second conducting
`film, the conducting spacers, and the third conducting film are connected in turn on the
`
`dielectric film left. The conducting spacers maintain the cell gap between the first and
`second substrates.
`
`[0021]
`
`One embodiment of the invention resides in a contact structure for connecting a
`conducting fihn formed on a first substrate with a conducting film formed on a second
`
`the contact structure comprising: a cell gap
`substrate opposite to the first substrate,
`defined between the first and second substrates; a first conducting film formed on the
`first substrate; a dielectric film covering the first conducting film; openings formed in
`the dielectric film to expose parts of the first conducting film; an insulator deposited on
`only portions of the first conducting film exposed through the openings;
`at second
`conducting film covering the openings; a third conducting film formed on the second
`substrate; and conducting spacers held between the first and second substrates and
`
`connecting the second and third conducting films. The second conducting film is
`
`connected with the first conducting film through the openings extending through the
`insulator.
`The second conducting film,
`the conducting
`spacers, and the third
`
`conducting film are connected in turn through the openings extending through the
`
`insulator.
`substrates.
`
`The conducting spacers maintain the cell gap between the first and second
`
`[0022]
`
`Another embodiment of the invention resides in a contact structure for
`
`connecting a conducting film formed on a first substrate of an electro—optical device
`with a counter electrode formed on a second substrate opposite to the first substrate,
`
`which has pixel electrodes formed thereover, the contact structure comprising: a cell gap
`
`defined between the first and second substrates; at first conducting film formed on the
`
`first substrate and under the pixel electrodes; an interlaycr dielectric film covering the
`
`first conducting film; openings formed in the interlayer dielectric film to expose parts of
`
`the first conducting film by selectively leaving the interlaycr dielectric film; a second
`
`conducting film defining the counter electrode formed on the second substrate; a third
`
`Received from < ?03+383+037t) > at 12161111 11:15:47 AM [Eastern Standard Time]
`
`-11.
`
`Exhibit 1002, page 193
`
`

`
`C
`
`J
`
`Conducting film covering the interlayer dielectric film left and the openings; and
`conducting spacers held between the first and second substrates and connecting the
`
`second and third conducting films. The second conducting film is connected with the
`
`firs: conducting film through the openings. The third conducting film and the pixel
`
`electrodes are formed from a common starting film. The second conducting film, the
`
`conducting spacers, and the third conducting film are connected in turn on the dielectric
`
`film left. The conducting spacers maintain the spacing between the first and second
`substrates.
`
`[0023]
`
`A further embodiment of the invention resides in a contact structure for
`
`connecting a first conducting film formed over a first substrate of an electro-optical
`
`device with a counter electrode formed on a second substrate opposite to the first
`
`substrate, which has pixel electrodes formed thereon, the Contact structure comprising: a
`cell gap defined between the first and second substrates; a first conducting film formed
`
`on the first substrate and under the pixel electrodes; an interlayer dielectric film
`
`covering the first conducting film; openings formed in the interlayer dielectric film to
`
`expose pans of the tirsl; conducting film; an insulator formed on selected portions of the
`
`surface of the first conducting film extending through the openings;
`
`21 second
`
`conducting film covering the Openings; a third conducting film defining the counter
`
`electrode formed on the second substrate; conducting spacers held between the first and
`
`second substrates and connecting the second and third conducting films. The pixel
`
`electrodes and the second conducting film are formed from a common starting film.
`
`The second conducting film is connected with the first conducting film through the
`
`openings extending through the insulator. The second conducting film, the conducting
`
`spacers, and the third conducting film are connected in turn on the insulator formed in
`
`the openings. The conducting spacers maintain the cell gap between the first and
`
`second substrates.
`
`[0024]
`
`A still other embodiment of the invention resides in a contact structure for
`
`connecting a conducting film formed on a first substrate with a conducting film formed
`
`on a second substrate opposite to the first substrate, the Contact structure comprising: a
`
`Received front < 703+8B3+0370 > at 12115101 11:15:47 AM [Eastern Standard Time]
`
`-12-
`
`Exhibit 1002, page 194
`
`

`
`O
`
`J
`
`cell gap defined between the first and second substrates; at first conducting fi]m formed
`
`on the first substrate; a dielectric film covering the first conducting film; openings
`formed in the dielectric film and exposing parts of the first conducting film; a second
`
`conducting film covering the openings; a third conducting film formed over the second
`
`substrate; a fourth conducting film formed between the second substrate and the third
`
`conducting film and in contact with the third conducting film; and conducting spacers
`
`held between the first and second substrates. The first conducting film,
`
`the second
`
`conducting film,
`
`the conducting spacers,
`
`the third conducting film, and the fourth
`
`conducting films are connected in turn through the openings. The spacers maintain the
`
`cell gap between the first and second substrates.
`
`[0025]
`
`[Embodiment Modes of the Invention]
`
`The present embodiment of this invention is described by referring to FIGS. 1,
`2A and 2B.
`
`[0026]
`
`[Embodiments of the Invention]
`
`[Embodiment 1]
`
`FIG. 1 is a fragmentary cross-sectional view of a common contact portion of a
`
`liquid crystal display in accordance with the present embodiment. FIGS. 2 are top plan
`
`views of the TF1“ substrate of the liquid crystal display. The structure of a region 120
`
`shown in FIG. 2 is depicted in the enlarged cross section of FIG. 1.
`
`[0027]
`
`As shown in FIG. 13, in the prior art structure, the spacers in the pixel region
`
`12 are located over the interlayer insulating film 18 via the pixel electrode 19.
`
`However, the interlayer dielectric film 18 does not exist under the conducting pad 2?. at
`
`the common contact portion 16. Hence, the cell gap Go in the common contact portion
`
`depends on the thickness of the interlayer dielectric film 18.
`
`[0028]
`
`Accordingly, in the present embodiment, an insulator, or a dielectric, is inserted
`
`under the conducting pad in the common contact portion. Conducting spacers are placed
`
`on top of the dielectric, so that the cell gap Gc in the contact portion does not depend on
`
`Received from < 703+88‘.i+03?0 > at 125101 11:15:47 AM [Eastern standard lime]
`
`.13-
`
`Exhibit 1002, page 195
`
`

`
`O
`
`Q
`
`the thickness of the interlayer dielectric film 18.
`
`In the present embodiment, openings
`
`are formed, selectively leaving the interlayer dielectric film 13.
`
`[0029]
`
`In the present embodiment, as shown in FIG. 1, a first conducting film 103 is
`
`formed on a first substrate 101. A dielectric film 104 is deposited on the first conducting
`
`film 103. The dielectric film 104 is selectively left to form openings 111 that expose
`
`parts of the first conducting film 103. A second conducting film 105 is fonned so as to
`
`cover the left pans of the dielectric film, 1042:, and the openings 111.
`
`[0030]
`
`A third conducting film 106 is formed on the second substrate 102. Conducting
`spacers 107 are sandwiched between the first substrate 101 and the second substrate
`
`102.
`
`[0031]
`
`In the prior art opcnfi 110 shown in FIG. 2A, the dielectric film 104 has been
`
`fully removed. In the present embodiment, the dielectric film 104 is selectively left to
`
`form the dielectric film portions 10421 and the Openings 111. The openings 111 expose
`
`pans of the first conducting film 103. The first conducting film 103 is connected with
`
`the second conducting film 105 at these openings 111.
`
`[0032]
`
`On the first substrate 101, the left dielectric film 104a is closest to the second
`
`substrate 102; therefore, on the left dielectric film 1043, the second conducting film 105
`formed on the first substrate electrically connects with the third conducting film 106
`
`formed on the second conducting film 102 through the conducting spacer 107, as shown
`in FIG. 1.
`
`[0033]
`
`In region 110, the left dielectric film 104a is closest to the second substrate;
`
`therefore, the conducting spacers 107 electrically connecting the second conducting film
`
`105 with the third conducting film 106 maintain the gap G between the substrates.
`
`Consequently, this gap G is dependent only on the size of the conducting spacers 107.
`
`Therefore, where the conducting spacers 107 are unifonn among liquid—crystal cells, the
`
`gap G can be made uniform among cells, even if the thickness t of the dielectric film
`
`Reteivedfmm<T03+883+0370>at12l5lll111:15:47AM[EastemStandardTIme]
`
`-14-
`
`Exhibit 1002, page 196
`
`

`
`C
`
`Q
`
`104 differs among cells.
`
`[0034]
`
`In the present embodiment, it is desired that the area of each ‘opening 111 be
`
`sufiiciently larger than the area occupied by each conducting spacer and offer space so
`
`that the conducting spacers can move freely, because the spacers 107 existing in the
`
`openings 111 do not contribute toward maintaining the gap. Otherwise, plural
`
`conducting spacers 107 would be stacked on top of each other, making it impossible to
`
`maintain the cell gap G uniform across the cell.
`
`[0035]
`
`Also in the present embodiment, it is desirable that the area of the surface of
`
`each left dielectric film portion 104a be sufficiently larger than the area occupied by
`
`each conducting spacer 107, assuring arrangement of the conducting spacers 107.
`
`If
`
`the spacers 107 are not positioned over the dielectric film 104a with certainty, it will not
`
`be possible‘ to make electrical connections between the first and second substrates.
`
`Furthermore, the gap will not be maintained.
`
`[0036]
`
`The openings 111 are formed as shown in FIG. 2A in the present embodiment.
`
`The relation between the left dielectric film 10421 and each opening lll may be reversed
`
`as shown in FIG. 2B. It is that noted FIG. 1 is an enlarged view of the region 120
`
`indicated by the broken line in FIG. 2B.
`
`[0037]
`
`[Embodiment 2]
`
`The present embodiment is described by referring to FIGS. 1 and 2A. FIG. 1 is
`
`a cross-sectional view of a common contact portion of the liquid crystal display in
`
`accordance with the present embodiment.
`
`FIG. 2A is a top plan view of the TET
`
`substrate of the liquid crystal display.
`
`FIG. 1 is an enlarged cross-sectional view of the
`
`region 120 indicated by the broken line in FIG. 2A.
`
`[0038]
`
`A dielectric is inserted under a conducting pad in the common contact portion,
`
`in the same manner as in Embodiment 1. Conducting spacers are positioned on the
`
`diclcctric. Thus, the cell gap Go in the common contact portion does not depend on
`
`Received from < 703+883+0370 > at W01 11 :15:4T AM [Eastern Standard Time]
`
`- 15 -
`
`Exhibit 1002, page 197
`
`

`
`O
`
`Q
`
`the thickness of the interlayer dielectric film 13.
`
`The present embodiment
`
`is
`
`characterized in that the dielectric film 18 is selectively left to form openings.
`[0039]
`
`In particular,
`
`in the present embodiment,
`
`the dielectric layer is formed
`
`underneath the conducting pad 22. The conducting spacers are positioned on the
`
`dielectric. Consequently,
`
`the cell gap Go in the common contact portion is not
`
`dependent on the thickness of the interlayer dielectric film 18.
`
`[0040]
`
`Referring to FIG. 1, a first conducting film 103 is formed on top of a first
`substrate 101. A dielectric film 104 covers the first conducting film 103. The
`dielectric’ film 104 is provided with openings 110 to selectively expose the surface of
`
`the first conducting film 103. The exposed portions of the dielectric 104 are indicated
`
`by 104a. A second conducting film 105 is formed to cover the openings 110.
`
`[0041]
`
`A third conducting film 106 is formed on the second Substrate 102. Conducting
`
`spacers 107 are located between the first substrate 101 and the second Substrate 102.
`
`[0042]
`
`FIG. 2A is a top plan view of the IFT substrate, and in which the second
`
`conducting film 105 is not yet deposited.
`
`In FIG. 2A, the region 110 indicated by the
`
`broken line corresponds to the opening for the common Contact formed in the interlayer
`
`dielectric film 18 of the prior art structure. A dielectric 1043 is selectively deposited to
`
`Icavc portions of the first conducting film 103 to be exposed.
`'
`[0043]
`
`The first conducting film 103 is exposed at locations where the dielectric 10421
`
`is not deposited. The exposed portions of the firs: conducting film 103 are connected
`
`with the overlying second conducting film 105.
`
`[0044]
`
`On the first substrate 101, the dielectric 104a is closest to the second substrate.
`
`As shown in FIG. 1, on the dielectric 104a, conducting spacers 107 electrically connect
`
`the second conducting film 105 on the first substrate 101 with the third conducting film
`
`106 on the second substrate 102.
`
`Received from < 703+1l83+01l70 > al 1216101 11:15:4?At1[Eastem standard lime]
`
`-15.
`
`Exhibit 1002, page 198
`
`

`
`Q,
`
`{Q
`
`[0045]
`
`The dielectric 1043 is closest to the second substrate 102. Therefore,
`
`the
`
`conducting spacers 107 electrically connecting the second conducting film 105 with the
`
`third conducting film 106 hold the cell gap G.
`
`In consequence, the gap G is dependent
`
`only on the size of the conducting spacers 107. Where the spacers 107 are uniform in
`
`size, the cell gap G can be rendered uniform among liquid-crystal cells even if the
`
`thickness t of the dielectric film 104 differs among cells.
`
`[0046]
`
`'
`
`In the present embodiment,
`
`the area of each portion not covered with the
`
`dielectric 104a is preferably sufficiently wider than the area Occupied by one conducting
`
`spacer 107 and permits the conducting spacers 107 to move freely, because the spacers
`
`107 existing in the regions where the dielectric 10421 is not present do not contribute
`
`toward maintaining the gap. Otherwise, plural conducting spacers 107 would be
`
`stacked on top of each other, making it impossible to maintain the cell gap G uniform
`across the cell.
`
`[0047]
`
`Also in the present embodiment, it is desirable that the area of each portion of
`
`the dielectric film 1043 be sufficiently larger than the area occupied by one conducting
`
`spacer 107 and that the conducting spacers 107 be arranged with certainty. if the spacers
`
`107 are not positioned on the dielectric film 104a with certainty, it will not be possible
`
`to make electrical connections between the first and second substrates. Furthermore, the
`
`cell spacing will not be maintained.
`
`[0043]
`
`In this embodiment, the dielectric 104:: is deposited as shown in FIG. 2A. The
`
`relation between the regions where the dielectric 104a is deposited and each region
`
`where the fll’Sl conducting film 103 is exposed may be reversed as shown in FIG. 3B.
`
`[0049]
`
`ifiiamplcsl
`
`[Example 1]
`
`In this example,
`
`the present invention is applied to a common contact portion
`
`of a reflection-type liquid crystal display. FIG. 3 is a top plan view of the TFT
`
`-17-
`
`Received from < 703+883+113?0 > at 1216101 11:15:47 AM [Eastern Standard Time]
`
`Exhibit 1002, page 199
`
`

`
`O2
`
`J
`
`substrate of this liquid crystal display. FIG. 4 is a top plan view of the counter
`
`substrate of the liquid crystal display.
`
`[0050]
`
`Refening to FIG. 3, the TF1" substrate 200 comprises a substrate 201 having a
`
`pixel region 202, a scanning line driver circuit 203, and a signal line driver circuit 204.
`
`Pixel electrodes and TFI's