SEL EXHIBIT NO. 2034
`
`INNOLUX CORP. v. PATENT OF SEMICONDUCTOR ENERGY
`LABORATORY CO., LTD.
`
`IPR2013-00028
`
`

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`||||l||||||||l||||||||||||||||||||l|||||||||||||||||||||||l||||l|||||||||||
`U800"/436480B2
`
`(12) United States Patent
`Kang et at.
`
`(10) Patent No.:
`(45) Date of Patent:
`
`US 7,436,480 B2
`Oct. 14, 2008
`
`(54) LIQUID CRYSTAL DISPLAY DEVICE AND
`ME'I'H()D OF FABRl(.'A'I'lNG THE SAME
`
`(75)
`
`Inventors: Dong I-Io I-(ang, (_iumi-si (KR); Tae
`Yong Jung. Ciumi-si (KR);Jo11gIloIJI1
`Bae. Sztchcuh-si (KR)
`
`tlamlkawzi et at.
`1.-‘"2002
`20030008815 Al
`200250054261 AI '°
`5.’2002 Sekiguchi
`732004 He:
`200400125326 Al
`7.12004 Nam eta].
`30043013594! AI ‘’
`20050139553 AI *
`(152000 Kstng ct al.
`(02006 Ahrt cl 211.
`21106.-'U139S5fi AI "
`2007'-"02".-'9S43 AI “‘ 12200? Park cl :1].
`
`..
`
`34‘)! I 22
`
`.149-"||t)
`34914‘)
`.. 349515]
`349.-"40
`
`Assigncc: LG Display Co... I.td.. Seoul (KR)
`
`Notice:
`
`Subject to any disclaimer. the term efthis
`patent is extended or ztdjtlsled under 35
`U.S.C‘. I54-(bi by 3??‘ days.
`
`l-'ORi'EI(iN PATF.NT 1'J(_JCl1l'\«’1l"-.N"1”S
`2002 —049054
`292002
`2003 4262 378
`9='2003
`561292
`I 152003
`W0 9935201 I
`I03 I99‘)
`
`.11’
`JP
`'|'W
`W0
`
`(21) App1.No.: 111314514
`
`(22)
`
`Filed:
`
`Dec. 22., 2005
`
`(65)
`
`Prior Publication Data
`US 200610139553 Al
`Jun. 29. 2006
`
`Foreign Application Priority Data
`(30)
`Dec. 23.2004
`(KR)
`10-2004-0110885
`Oct. 19. 2005
`(KR)
`I0-2005-0098755
`
`(51)
`
`Int. Cl.
`(2006.01)
`(E13217 I/I345
`3491149: 3491139: 349f153
`(52) U.S. (fl.
`(58)
`Field ol'Classl['icatlon Search
`349K139.
`34‘)/141_l49.122.l53.187. 189. 190.193.
`349.140
`See application file for complete search history.
`References Cited
`
`U .S. PATIENT DOCUMFNTS
`
`6.392.’.-"35 B1
`6.404.480 B2
`6.4(tt’t.2tJ4 Bl
`6.473.147 I31
`
`"l‘a.ni
`5.-‘"2002
`652002 1-lirakala et al.
`I0.-?.tJ0."£ Yamagisiti ct al.
`1052002 N:I.kaha.ra et al.
`
`* cited by exzuniner
`
`Pr:'nmr_t' Exantiner
`Brian M 1-leztly
`(74) At‘1‘ome_t-‘. Agent. or Firm
`McKI:11na Long 8'. Aldridge
`1.1 P
`
`(57)
`
`Al3STRA(.'T
`
`This ittventioii relates to a liquid crystal display device that is
`adaptive for being made in small size as well as sliurtening
`process time. and :1 labricatittg method thereof. A liquid crys-
`tal display device according to an embodiment nftlte present
`itivention includes an upper substrate where a common elec-
`trude is formed‘. a lower substrate that faces the upper sub-
`strate: a pluralityofgate drive inte_p__ratedcircuits; that supplies
`:1 gate signal to at gate line that is located an the lower s1:b~
`strate: a plural ity ofdata drive integrated circuits that supplies
`:1 data signal to :1 data line that is located on the lower sub-
`strate: :1 C0t‘t’1ll‘lt.'Jl1 line that supplies a com.mon voltage to the
`t.‘Dl11[11D1'1 electrode through the gall: drive integrated circuit
`and the data drive integrated circuit when driving a liquid
`crystal : and a conductive sealant that electrically connects the
`common electrode to the common line in one of an area of
`between adjacent gate drive integrated circuits and between
`adjacent data drive iiitegrated circuits.
`
`24 Claims, 24 Drawing Sheets
`
`192
`
`194198
`190
`
`

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`U.S. Patent
`
`Oct. 14, 2008
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`Sheet 1 01°24
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`US 7,436,480 B2
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`FlG.1
`RELATED ART
`
`

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`U.S. Patent
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`Oct. 14, 2008
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`Sheet 2 of 24
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`US 7,436,480 B2
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`F|G.2
`RELATED ART
`
`

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`U.S. Patent
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`Oct. 14, 2008
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`Sheet 3 of 24
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`US 7,436,480 B2
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`F|G.3
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`Oct. 14, 2008
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`US 7,436,480 B2
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`U.S. Patent
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`Oct. 14, 2008
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`Sheet 5 01°24
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`US 7,436,480 B2
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`196192194
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`Oct. 14, 2008
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`US 7,436,480 B2
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`1
`LIQUID CRYSTAL DISPLAY DEVICE AND
`METHOD OF FABRI(.'A'l'ING TIIE SANIE
`
`This application claims the benefit of Korean Patent Appli-
`cation Nos. P2004-110885. filed on Dec. 23. 2004. and
`l’20t]5-98'r'55. filed on Oct. 19. 2005. which are hereby incor-
`porated by reference for all purposes as if fully set forth
`herein.
`
`BACKGROUND OF THE INVENTION
`
`1. Field of the Invention
`The present invention relates to a liquid crystal display
`device and a fabricating method thereof. and more particu-
`larly to a smaller liquid crystal display device with a shorter
`process time. and a fabricating method thereof.
`2. Discussion of the Related Art
`A liquid crystal display device controls the light transmit-
`tance of liquid crystal by use of an electric field. thereby
`displaying a picture. The liquid crystal display device. as
`shown in FIGS. 1 and 2. includes a thin film transistor array
`substrate 70 and a color filter array substrate 80 which are
`opposite to each other with a liquid crystal 50 in between.
`The th.in film transistor array substrate ‘Flt includes: a gate
`line 2 and a data line 4 that cross each other on a lower
`substrate 1: a thin film transistor 30 formed where the gate
`line 2 crosses tl1e data line 4: a pixel electrode 22 connected to
`the thin film transistor 30; and a lower a.lign.n1ent lilm spread
`thereover for aligning liquid crystal.
`The color filter array substrate 80 includes: a black matrix _
`18 fonned on an upper substrate 11 to prevent light leakage‘.
`a color filter l2 realizing color: a common electrode 14 that
`forms a vertical electric field with the pixel electrode 22; and
`an upper alignment film spread thcreover For aligning liquid
`crystal.
`A silver dot It] is formed outside a sealant 16. as shown in
`FIG. 2. in order to apply a corrunon voltage to the common
`electrode 14 of the color filter array substrate 89. The silver
`dot II] is placed between the thin film transistor substrate 70
`and the color filter substrate 80 95 a paste. and then the two
`substrates TU. 80 are bonded together by use of the sealant.
`The silver dot ll) spreads out to the adjacent area because of
`pressure applied to the substrates 1. 11 upon bonding them
`together. in order for the silver dot It! to spread out to the
`adjacent area and not to be damaged by a scribing process. a
`relatively broad silver dot area is required inside a scribing
`line. Further, for a small liquid crystal display device. alter
`lornting a plurality of small panel areas on a mother substrate.
`a silver dot process is performed in all the panel areas. thus
`there is a problem in that the process is more complicated and
`requires more process time than a large liquid crystal display
`device.
`
`SUMMARY OF TIIE lNV'ENTlON
`
`Accordingly. the present invention is directed to liquid
`crystal display device and method offabricating the same that
`substantially obviates one or more of the problems due to
`limitations and disadvantages of the related art.
`An advantage of the present invention is to provide a liquid
`crystal display device that is small i11 size as well as decreas-
`ing the process time. and a Fabricating method lhereoli
`Additional features and advantages of the invention will be
`set forth in the description which follows. and in part will be
`apparent from the description. or may be learned by practice
`of the invention. The objectives and other advantages of the
`invention will be realized and attained by the structure par-
`
`2
`ticularly pointed out in the written description and claims
`hereof as well as ll1c appended drawings.
`In order to achieve these and other objects oftlte invention.
`a liquid crystal display device according to an aspect of the
`present invention includes an upper substrate where a com-
`mon electrode is formed; a lower substrate that faces the
`upper substrate: a plurality of gate drive integrated circuits
`that supplies a gate signal to a gate line that is located on the
`lower substrate: a plurality of data drive integrated circuits
`that supplies a data signal to a data line that is located on the
`lower substrate: a conunon line that supplies a common volt-
`age to the common electrode through the gate drive integrated
`circuit and the data drive integrated circuit when driving a
`liquid crystal; and a conductive sealant that electrically con-
`nects the common electrode to the common line in one of an
`area of between adjacent gate drive integrated circuits and
`between adjacent data drive integrated circuits.
`A liquid crystal display device according to another aspect
`of the present invention includes a common electrode on an
`upper substrate". a supply pattern that overlaps a signal line
`that is on a lower substrate that
`is opposite to the upper
`substrate with an insulating film ofat least one layer tlierebe-
`tween to supply a common voltage to the common electrode:
`and a sealant including of a conductive spacer that bonds the
`upper substrate to the lower substrate and electrically con-
`nects the common electrode to the supply pattern.
`A fabricating method of a liquid crystal display device
`according to still another aspect of the present invention
`includes providing an upper substrate where a common elec-
`Lrode is formed; providing a lower substrate to which a gate
`signal is supplied front a gate drive integrated circuit and a
`data signal is supplied lnorn a data drive integrated circuit;
`bonding the upper substrate and the lower substrate by use of
`a conductive sealant. and wlicrein the step of providing the
`lower substrate includes forming a common line to supply a
`common voltage to the common electrode through die gate
`drive integrated circuit and the data drive integrated circuit
`when driving a liquid crystal: and electrically connecting the
`common electrode to the common line in one area between
`the adjacent gate drive integrated circuits and between the
`adjacent data drive integrated circuits by use of the conduc-
`tive sealant.
`A fabricating method of a liquid crystal display device
`according to still another aspect of the present
`invention
`includes providing an upper substrate where a conunon elec-
`trode is formed: providing. a lower substrate where a common
`pattern is formed overlapping a signal line with an insulating
`film of at least one layer therebetween to supply a common
`voltage to the common electrode: and bonding together the
`upper substrate and the lower substrate using of a sealant
`includingofa conductive spacer that electrically connects the
`common electrode to the co1n.rnon pattern.
`It
`is to he understood that both the foregoing general
`description atld I.he following detailed description are exet
`-
`plary and explanatory and are intended to provide further
`explanation of the invention as claimed.
`
`BRIEF DESCRlPTl0N OF THE DRAWINGS
`
`The accompanying drawings. which are included to pro-
`vide a furt.her understanding of the invention and are incor-
`porated in and constitute a part of this specification. illustrate
`embodirnents oftlte invention and together with the descrip-
`tion serve to explain the principles of the invention.
`In the drawings:
`FIG. 1 is a plan view representing a liquid crystal display
`device ofthe related an:
`
`

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`US 7,436,430 B2
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`3
`FIG. 2 is a plan View representing a silver dot for supplying
`:1 common voltage to a cotumon clcctrodc shown in FIG. 1:
`FIG. 3 is a plan view representing a liquid crystal display
`device according to a first etrtbodirnent of the present inven-
`tion:
`l-‘l(_i. 4 is an enlarged plan view of an area A shown in FIG.
`
`3'.
`
`FIG. 5 is a sectional diagram representing the liquid crystal
`display device taken along the line II-ll’ ol'FIG. 4:
`FIG. 6 is a plan view rcprcsctttiug a liquid crystal display
`device according, to a second etnboditnent of tlte present
`invention:
`FIG. 7 is a sectional diagram representing the liquid crystal
`display device taken along the lines III-1lI'. 1V-JV‘ ol‘l<‘iU. 6;
`FIG. 8 is a sectional diagram representing a transfiectivc
`liquid crystal display device having a retlection electrode
`which is formed at the same time as a second supply pattern:
`and
`
`FIGS. 9A to 9F are sectional diagrams representing a fab-
`ricating method ofa thin liltn Lrattsistorarray substrate shown
`in FIGS. 7 and 8.
`FIG. ll) is a diagram representing a liquid crystal display
`device according to a tltird embodintent of the present inven-
`non:
`
`FIGS. 11A and 11B are enlarged diagrams of an area B in
`FIG. 10:
`FIGS. 12A and 12B are enlarged diagrams ofan area C in
`FIG. 10:
`FIGS. 13A to 131') are diagrams representing a fabricating
`method of a liquid crystal display device according to the '
`third embodiment of the present invention:
`FIG. 14 is a diagrarn representing a fabricating step of a
`conductive ball included in a conductive sealant shown in
`FIGS. 1113 and 1213.
`
`'
`
`_
`
`DI-"'.TAII..F:D DESCRIPTION OF THE
`lLLUSTRATF.l) EMBODIMENT
`
`Reference will now be made in detail to the embodiments
`of tlte present invention. examples ofwhich are illustrated in
`the accompanying drawings.
`With reference to FIGS. 3 to 14, embodiments of the
`present invention will be explained as follows.
`FIG. 3 is a plan view representing a liquid crystal display
`device according to a lirst cntbodintcnt of the prcsettt inven-
`tion.
`
`The liqttid crystal display device shown in FIG. 3 includes:
`a thin film transistor substrate 170 where a thin film transistor
`array is formed; a color llltcr substrate 180 where a color filter
`array is formed: and a sealant 186 for bonding the thin film
`transistor substrate 1'70 and 111C color liltcr substrate 181}
`together.
`The thin lilm transistor array substrate 170 has a thin film
`transistor array formed on a lower substrate, wherein the thin , ;
`film transistor array includes a gate line and a data line cross-
`ing each other to define a pixel area; a thin film transistor
`formed at a crossing part thereof: a pixel electrode connected
`to the thin film transistor; a lower alignment film spread
`tltercover for aligning liquid crystal.
`The color filler array substrate 180 has the color filter array
`fornted on an upper substrate 111. as shown in FIG. 5.
`wherein the color liltcr array includes a black matrix for
`preventing light leakage; a color filter for realizing color; a
`common electrode 182 to generate a vertical electric field
`with the pixel electrode: an upper alignment
`film spread
`thcrcover for aligning liquid crystal.
`
`4
`A connecting part 190 connected to the conmton electrode
`182 Lltrouglt the sealant 186 is fonnotl on the lower substrate
`101 in order to apply a cotnrnon voltage to the common
`electrode 182. The connecting part" 190. as shown in FIGS. 4
`and 5. includes a first supply pattern 192 formed in an area
`which overlaps the sealant 186 along the sealant 186; a sec-
`ond supply pattern l96 oomtected to the first supply pattern
`192 thmtlgh a supply Contact hole [94 which penetrates an
`insulating film l5tl of at least one layer: and ii conductive
`spacer 184 for connecting the second supply pattern 196 and
`the contmon electrode 182.
`The first supply pattern 192 is formed of the same metal
`and on the same level as a gate link 102 which is connected to
`the gate line. thus the first supply pattern 192 is formed to be
`separated from the gate link 102 by a designated gap. The first
`supply pattern 192 is formed to extend from a supply pad 188
`which is connected to a power supply (not shown).
`The second supply pattern 196 is formed ofthe same mate-
`rial on the same level as Lhe pixel electrode (not shown). The
`second supply pattern 196 is fonncd in a line in the saute
`manner as the first supply pattent 192 that is formed in a line.
`or formed in a dot shape so as to partially overlap the first
`supply pattern 192.
`The supply contact ltole 194. in case of a transmissive
`liquid crystal display device, penetrates the insulating film
`150 including a gate insulating film and a passivation film to
`expose the lirst supply patient 192.111 the case of a Lt'aItsllec-
`live liquid crystal display dL'vicc_. the supply contact hole 194
`penetrates the insulating film 150 including at least one ofthe
`gate insulating film. the passivation filnt. and an organic film
`to expose the first supply pattent 192.
`Ti'1(': conductive spacer 184 is formed of at least one of a
`conductive glass fiber and a conductive ball. Herein. the con-
`ductive ball is formed by coating a conductive tnatcrial such
`as silverAg. gold Au on the outer side of a ball space: so as to
`be conductive. The conductive ball can fix the gap between
`the substrates even at a designated pressure differently from a
`conductive ball that is included in an anisotropic conductive
`film ACF.
`The conductive spacer 184 is mixed with the sealant 186 to
`be spread over the substrate or the sealant 186 is spread over
`the substrate where the conductive spacer 184 is formed.
`In this way. the liqttid crystal display device according to
`the first embodiment of the present invention connects the
`cnmnton electrode lhrrncd on the upper substrate to the con-
`necting part fonned on the lower substrate by use of the
`sealant including the conductive spacer. In this case. a sepa-
`rate silver dotting process is not required and the manufac-
`turing process is simplified.
`On the other hand. the liquid crystal display device accord-
`ing to the first embodiment ol'thc present invention has the
`lirst supply pattern 192 lorrncd having a designated gap with
`the gate link 192 along the outer area ofthe substrate 101 . The
`lirst supply pattern 192 causes a liquid crystal margin area.
`i.e.. an area into which liquid crystal is injected but which is
`not included an active picture area. to increase. thtts there is
`difliculty in that the substrate 101 is small size.
`FIG. 6 is 2!. plan view rtrprcsctttittg a liquid crystal display
`device according to a second embodiment of the present
`invention, and FIG. 7 is a sectional diagram representing the
`liquid crystal display device along the lines Ill-III‘. IV-IV‘ of
`FIG. 6.
`The liquid crystal display device shown in FIGS. 6 and 7
`includes the same components as the liquid crystal display
`device shown in FIGS. 4 and 5 except that the connecting part
`191} is formed to overlap the gate link 102. Accordingly. the
`detailed description for the same components will be omitted.
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`US 7,436,430 B2
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`5
`The conrrcctirtg part 191} includes a first supply pattent 192;
`a second supply pattent 196 connected to the first supply
`pattern 192 through a supply contact hole 194 that penetrates
`an insulating film 150 of at least orte layer; and a conductive
`spacer 184 for connecting the second supply pattern 196 to .
`the common electrode 182.
`The first supply pattern 192 is fonned at one side of the
`substrate 101 to be adjacent to an inclined area of tlte last gate
`linlt 102 which is located at the outermost area ofthe substrate
`10 l. The first supply pattern 192 is formed to extend front the
`supply pad 188 which is connected to a power supply [not
`shown).
`The second supply pattern 196 is lbntted to overlap a
`sealant I86 along the sealant 186 to be connected to the first
`supply panem 192 through the supply contact hole 194. Fur-
`ther. the second supply pattern 196 is formed to overlap tlte
`gate link 102 witlt the insulating lihn ofat least orte layer.
`Herein, the supply Contact hole 194 is lbrttted in an area which
`overlaps the sealant 186.
`The second supply pattern 196. in case of a transfiective
`liquid crystal display device which is operated in reflection
`mode and transmission mode. is fbmted of the same material
`on the same level as a reflection electrode 130 shown in FIG.
`8. [n this case, the second supply pattern 196 is t'on:ned to
`overlap the lirst supply pattern 192 with a gate insulating film
`112. a first passivation film 118, and an organic lllt‘t.'t 128. The
`supply contact hole 120 portetrntes the gate insulating film
`112. the passivation lilm I18. and the organic lihrr 128 to
`expose the first supply pattern 110. On the other hand. the
`transfieetive liqttid crystal display device displays picture in .
`the reflection mode. "re. the external light like a natural ligltt
`is reflected in it rcflcction area when: the reflection electrode
`is formed, if an external light is sutlicient. and the transflec-
`tive liquid crystal display device displays pictttrc in the trans-
`rnjssion mode. i.e.. light incident from a backlight unit is used
`in a transntissiott area where the reflection electrode is nor
`formed. if the extental light is not sutficient.
`The second supply pattern 196. in case of a transmissive
`liquid crystal display device where a picture is displayed by
`use oflight incident from the backlight unit. is formed oftlte
`same material on the santc level as the pixel electrode 122
`shown in FIG. 8. Further. the second supply pattern 196 is
`formed to overlap the first supply pattern 192 with the gate
`insulating filrn 112 and the prrssivation film 118. The supply
`contact hole 194 penetrates the gate insulating film 112 artd
`the passivation film 118 to expose the first supply pattern 192.
`The conductive spacer 184 is lbnned ofa conductive glass
`fiber or a conductive ball. The conductive spacer 184 is mixed
`with the sealant 184 to be spread over the substrate. or the
`sealant 186 is spread over the substrate where the conductive
`spacer 184 is l‘ormt-td.
`ln t.ltis way. the liqttid crystal display device according to
`the second embodiment of the present invention has the cort-
`rtecting part lbrnted to overlap the sealant area and the gate
`link. In this case. the conunon electrode and the connecting .
`part is connected by use of the cortdttctive spacer included in
`the sealant. thus no separate silver dotting process is required
`and the process is simplified.
`I-‘ur-ther. the supply pattern
`included in the connecting part is l'on:ncd to overlap the gate
`link. thus the liquid crystal margin area cart be decreased by
`the width olthc supply pattern. thereby enabling to make the
`liquid crystal display device to be small in size.
`On the other hartd, a thin film transistor array substrate of‘
`the trattsfiective liquid crystal display device shown in FIG. 8
`includes a gate line and a data litte which define a pixel area:
`a thin filnt transistor connected to the gate line and the data
`line: a pixel electrode 122 formed in the pixel area to be
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`connected to the thin film transistor: anda rcllcction electrode
`130 forrttcd in a reflection area of the pixel area.
`The thin filrn transistor selectively supplies a data signal
`front the data line to the pixel electrode 122 in response to a
`gate signal front the gate line. For this. the thin film transistor
`includes a gate electrode 106 connected to the gate line; a
`source electrode 108 connected to the data line: a drain elec-
`trode llll corutcctcd to tile pixel electrode 122: all] active layer
`114 which overlaps the gate electrode 106 with a gate insu-
`lating film 1 12 tltcrebetweert and forms a channel between the
`source electrode 108 and the drain electrode 110: and an
`ohmic contact
`layer 116 for providing an olunic-contact
`between the source electrode 108. and the drain electrode 110
`and active layer 114.
`The pixel electrode 122 is formed in the pixel area that is
`defined by the crossing of the data line 104 and the gate litre
`102. and tile pixel electrode 122 is connected to Llte drain
`electrode lift. The pixel electrode 122 generates a potential
`difference with the common electrode (not shown) by the data
`signal applied by the thin film transistor. The potential difler-
`ence causes the liquid crystals to rotate. thus the ligltt trans-
`mittance is determined by the degree of rotation of the liquid
`crystal in each ofthe reflection area and the transmission area.
`The reflection electrode 130 reflects the external light pass-
`ing through the color filter substrate (not shown) to the color
`filter substrate. The reflection electrode 130 has an embossed
`shape along the organic lilm [28 that is formed to have an
`embossed surface. thereby increasing the relleet ion ellicicncy
`by dispersing the light. The area where the reflection elec-
`trode 130 is formed is a reflection area in each pixel area, artd
`an area where the reflection electrode 13!] is not formed is a
`traitsmission area in each pixel area.
`A transmission hole 132 is formed that penetrates the
`organic lilnt 128 in the transntissiort area so that [lie path
`length of the light which passes through the liquid crystal
`layer in the rcfloction area and the tra ns mission area are equal.
`As a result. the refiected light incident on the reflection area is
`reflected at the reflection electrode 130 through the liquid
`crystal layer and emitted to the outside through the liquid
`crystal layer. The transmitted light of the backlight unit (not
`shown) being incident on the transmission area is transmitted
`through the liquid crystal layer to be emitted to the outside.
`Accordingly. the length of’ the ligltt path is the same irt the
`rcllcction area and tile transmission area. thus the tratrsmis-
`sion eflieicrtcy of the reflection mode of the liqttid crystal
`display device become the saute as that of the transmission
`mode ofthc liquid crystal display device.
`FIGS. 9A to 91*‘ are sectional diagrams representing a fab-
`ricating ntethod of a transfiective thin film transistor array
`substrate according to the present invention.
`Referring to FIG. 9A, a first conductive pattern group is
`formed including the gate link 102. the gate electrode 106.
`and the first supply pattern 192 on the lower substrate ltit.
`A gate metal layer is lbnncd on the lower substrate 101 by
`a deposition method such as sputtering. The gate metal layer
`is patterned by a photolitltograplty process and an etching
`process to fonn the first panern group including the gate link
`102. the gate electrode 106 and the first supply pattern 192.
`The gate metal layer is a single or n:rtIltiple layer structure of
`metal such as Al, Mo. Cr. Co. Al alloy. Mo alloy. Cr alley or
`Cu alloy.
`Referring to FIG. 9B. the gate insulating film I 12 is formed
`on the lower substrate 19] where the first conductive pattent
`group is formed. Next, a semiconductor pattern including the
`active layer and the ohmic contact layer. and a second con-
`ductive pattern group including the data line 104. the source
`electrode 108 and the drain electrode l 10 are fonncd tltercott.
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`US 7,436,430 B2
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`7
`The gate insulating. film 112. an amorphous silicon layer.
`an amorphotts silicon layer doped with inlpuritics. and a
`sourcefdrain metal iayerare sequentially formed on the lower
`substrate 101 where the first conductive pattern group is
`formed. by a deposition method such as PECVD and sputter-
`ing. The gate insulating fihn 112 may be fornned of an inor-
`ganic insulatingmnterial such as silicon oxide Siox or silicon
`nitride SiNx. and the sourcefdrain metal layer may be formed
`in a single or double layer structure ofnictal such as Al. Mo.
`Cr. Cu, Al alloy, Mo alloy. Cr alloy or Cu alloy.
`A photo-resist pattern is formed where a channel area on
`the sourcefdtrctin metal layer has a lowerheight than the photo-
`resist pattern over the sourcefdrain area. The sourcer’drain
`metal layer is patterned by a wet etching process using the
`photo—resist pattern, thereby forming the second conductive
`pattern group including the data line 104. the source electrode
`103, and the drain electrode lll) that is integrated with the
`source electrode 108.
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`Then, the amorpltous silicon layer doped with impurities
`and the amorphous silicon layer are simultaneously patterned
`by a dry etching process using the same photo-resist pattern.
`thereby forming the ohmic contact layer 116 and the active
`layer 1 14.
`Allcr the photo-resist pattern having a lower height in the
`cliannel area is removed by an ashing process, the ohmic
`contact layer 116 and the sourcefrlrain pattern of the channel
`area are etched by a dry etching process. Accordingly. the
`active layer ll4 ofthe cltaunel pan is exposed and the source _
`electrode 108 and the drain electrode are separated from each
`other.
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`Subsequently. the photo-resist pattern remaining on the
`second conductive pattern group is removed by a stripping
`process.
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`Referring to Fl(i. 9C. a first passivation film 118 is formed
`on the substrate 101 where the stxond conductive pattern
`group is formed. and an organic film 128 is tonned thereon.
`wherein the organic filtn 128 has a hole [34 and a transmis-
`sion hole 132 and has an embossed surface.
`
`The lirst passivation film 118 and the organic film 128 are
`sequentially tornted on the gate insulating filn:t 112 where the
`second conductive pattern group is liirrncd. Tl1e first passiva-
`tion film 1 18 may be formed of an inorganic insulating mate-
`rial such as the gate insulating, filtn 112. and the organic film
`123 may be formed of an organic insulating material such as
`acrylic resin.
`Then. the organic film 128 is patterned by a photolithog-
`raphy process, thereby tormirtg the hole 134 and the trails-
`mission hole 132. At this moment. a mask for forming the
`organic film 128 has a structure where a shielding area and a
`diffraction exposure area are repeated in the remaining area
`except the transmissiort area corresponding to the transmis-
`sion hole. Accordingly. the organic film 128 is patterned in a _
`structure where a shielding area (projectiotisl and a diffrac-
`tion exposure area (gnooves] having a step shape are repeated.
`Subsequently. the organic film 128 where the projections and
`the grooves are repeated is fired. thereby smoothing the step
`edges zuid forming the embossed shape on the surface of the
`organic film 128. Especially, the organic film 128 is formed so
`that an area where the pixel area is in Contact with the sealant
`has the embossed shape.
`On the other hand. the open hole 134 and the transmission
`hole 132 may be formed to penetrate the gate insulating tihn
`112. the first passivation film 118. and the organic film 128 in
`the same manner as the supply contact hole 194.
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`Referring to FIG. 9]). a third conductive pattern group is
`lonned including refeetion electrode 130 and the sccottd sup-
`ply pattern l9tS on the organic film 128 with the embossed
`shape.
`A reflection metal layer takes on embossed shape and is
`deposited on the organic film 128. The reflection metal layer
`may be formed ofa metal having high refiexibility. such as Al
`orAlNd. Sttbseqttcntly, the retlection metal layer is pattcnied
`by a photolithowphy process and on etching process.
`thereby forming the third conductive pattern group: including
`the reflection electrode 130 and the second supply patteni
`I96.
`
`Referring to FIG. 913. a second passivation film 136 having
`the contact hole 120 is formed on the organic film 128 where
`the third conductive pattern group is formed. It is also pos-
`sible that the second passivation Iilnl 136 is omitted.
`The second passivation tihn is formed on the