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`UNITED STATES PATENT AND TRADEMARK OFFICE
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`UNITED STATES DEPARTMENT OF COMMERCE
`United States Patent and Trademark Office
`Address: COMMISSIONER FOR PATENTS
`P.O. Box 1450
`Alexandria1 Virginia 22313- 1450
`wwwnsptogov
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`APPLICATION NO.
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` F ING DATE
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`FIRST NAMED INVENTOR
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`ATTORNEY DOCKET NO.
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`CONF {MATION NO.
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`12/276,289
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`11/21/2008
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`Patrick]. Quinn
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`X—3004 US
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`3744
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`24309
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`7590
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`10/27/2010
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`XEINXJNC
`ATTN: LEGAL DEPARTMENT
`2100 LOGIC DR
`SAN JOSE, CA 95124
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`FERNANDES, ERROL V
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`2894
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`MAIL DATE
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`10/27/2010
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`PAPER NUMBER
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`DELIVERY MODE
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`PAPER
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`Please find below and/or attached an Office communication concerning this application or proceeding.
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`The time period for reply, if any, is set in the attached communication.
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`PTOL—90A (Rev. 04/07)
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`IVM 1004
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`IPR ofU.S. Pat. No. 7,994,609
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`Office Action Summary
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`Application No.
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`Applicant(s)
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`12/276,289
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`QUINN, PATRICK J.
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`Examiner
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`ERROL FERNANDES
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`Art Unit
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`2894 -
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`-- The MAILING DA TE of this communication appears on the cover sheet with the correspondence address --
`Period for Reply
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`A SHORTENED STATUTORY PERIOD FOR REPLY IS SET TO EXPIRE 3 MONTH(S) OR THIRTY (30) DAYS,
`WHICHEVER IS LONGER, FROM THE MAILING DATE OF THIS COMMUNICATION
`Extensions of time may be available under the provisions of 37 CFR 1.136(a).
`In no event however may a reply be timely filed
`after SIX (6) MONTHS from the mailing date of this communication.
`If NO period for reply is specified above, the maximum statutory period will apply and will expire SIX (6) MONTHS from the mailing date of this communication.
`-
`- Failure to reply within the set or extended period for reply will, by statute, cause the application to become ABANDONED (35 U.S.C. § 133).
`Any reply received by the Office later than three months after the mailing date of this communication, even if timely filed, may reduce any
`earned patent term adjustment. See 37 CFR 1.704(b).
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`Status
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`1)IXI Responsive to communication(s) filed on 14 September 2010.
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`2a)I:I This action is FINAL.
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`2b)IZI This action is non-final.
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`3)I:I Since this application is in condition for allowance except for formal matters, prosecution as to the merits is
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`closed in accordance with the practice under EX parte Quayle, 1935 CD. 11, 453 O.G. 213.
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`Disposition of Claims
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`4)IZI Claim(s) 1-15 and 19-23 is/are pending in the application.
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`4a) Of the above Claim(s) 10,14 and 15 is/are withdrawn from consideration.
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`5)I:I Claim(s) _ is/are allowed.
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`6)IXI Claim(s) 1-4 11-13 19 and 20 is/are rejected.
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`7)IZI Claim(s) 5-9 and 21-23 is/are objected to.
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`8)I:I Claim(s) _ are subject to restriction and/or election requirement.
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`Application Papers
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`9)I:I The specification is objected to by the Examiner.
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`10)I:I The drawing(s) filed on
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`is/are: a)I:I accepted or b)I:I objected to by the Examiner.
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`Applicant may not request that any objection to the drawing(s) be held in abeyance. See 37 CFR 1.85(a).
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`Replacement drawing sheet(s) including the correction is required if the drawing(s) is objected to. See 37 CFR 1.121(d).
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`11)I:I The oath or declaration is objected to by the Examiner. Note the attached Office Action or form PTO-152.
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`Priority under 35 U.S.C. § 119
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`12)I:I Acknowledgment is made of a claim for foreign priority under 35 U.S.C. § 119(a)—(d) or (f).
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`a)I:I All
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`b)I:I Some * c)I:I None of:
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`1.I:I Certified copies of the priority documents have been received.
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`2.I:I Certified copies of the priority documents have been received in Application No.
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`
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`3.I:I Copies of the certified copies of the priority documents have been received in this National Stage
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`application from the International Bureau (PCT Rule 17.2(a)).
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`* See the attached detailed Office action for a list of the certified copies not received.
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`Attachment(s)
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`4) D Interview Summary (PTO-413)
`1) E Notice of References Cited (PTO-892)
`Paper No(s)/Mai| Date. _
`2) D Notice of Draftsperson‘s Patent Drawing Review (PTO-948)
`5) I:I Notice of Informal Patent Application
`3) IZI Information Disclosure Statement(s) (PTO/SB/08)
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`Paper No(s)/Mai| Date 05/07/2009'02/11/2010'02/24/2010'03/18/2010.
`6) D Other:
`U.S. Patent and Trademark Office
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`PTOL-326 (Rev. 08-06)
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`Office Action Summary
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`Part of Paper No./Mai| Date 20100923
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`
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`Application/Control Number: 12/276,289
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`Page 2
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`Art Unit: 2894
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`DETAILED ACTION
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`Election/Restrictions
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`Applicant's election with traverse of claims 1-9, 11-13, 17-20 in the reply filed on
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`07/02/2010 is acknowledged. The traversal is on the ground(s) that “the examiner has not
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`made a showing of the serious burden”. This is not found persuasive because subspecies A
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`and B denoted in the restriction (i) require a different field of search (for example, searching
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`different classes/subclasses or electronic resources, or employing different search queries) and
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`(ii) the prior art applicable to subspecies A would not likely be applicable to subspecies B.
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`The requirement is still deemed proper and is therefore made FINAL.
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`Furthermore, the examiner has acknowledged the submitted preliminary amendment
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`mailed to the office on 09/14/2010. As a result, the following office action has been prosecuted
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`with regards to claims 1-9, 11-13 and 19-23.
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`Claim Rejections - 35 USC § 102
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`The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the
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`basis for the rejections under this section made in this Office action:
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`A person shall be entitled to a patent unless —
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`(b) the invention was patented or described in a printed publication in this or a foreign country or in
`public use or on sale in this country, more than one year prior to the date of application for patent in
`the United States.
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`Claim 1, 3, 4 and 11-13 are rejected under 35 U.S.C. 102(b) as being Fong et al. by US
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`7,259,956 B2.
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`Regarding claim 1, Fong discloses:
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`a core capacitor portion having a first plurality of conductive elements (terminal A)
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`electrically connected to (Via D) and forming a first part of a first node of the capacitor formed in
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`a first conductive layer (Layer E) of the IC and a second plurality of conductive elements
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`Application/Control Number: 12/276,289
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`Page 3
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`Art Unit: 2894
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`(terminal B) electrically connected to (Via E) and forming a first part of a second node of the
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`capacitor formed in the first conductive layer (Layer E), the first plurality of conductive elements
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`alternating with the second plurality of conductive elements in the first conductive layer, and a
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`third plurality of conductive elements (terminal A or B, chosen as A in this case) electrically
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`connected to and forming a second part of the first node formed in a second conductive layer
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`(Layer D) adjacent to the first conductive layer, at least portions of some of the second plurality
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`of conductive elements overlying and vertically coupling to at least portions of some of the third
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`plurality of conductive elements; and (refer to Figure set 2A—2C
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`specifically Fig. 28)
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`a shield capacitor portion having a fourth plurality of conductive elements formed in at
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`least the first conductive layer of the IC (Layer E), the second conductive layer of the IC (Layer
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`D), a third conductive layer of the IC (Layer Z), and a fourth conductive layer of the IC (Layer A),
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`the first conductive layer and the second conductive layer each being between the third
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`conductive layer and the fourth conductive layer (refer to Figure set 2A-2C
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`specifically Fig.
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`23),
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`the shield capacitor portion being electrically connected to and forming a second part of
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`the second node of the capacitor and surrounding the first plurality of conductive elements and
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`the third plurality of conductive elements (refer to Figure set 2A-2C
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`specifically Fig. 2B - col 5
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`lines 36-42; shield top-most layer, bottom-most layer and side shield similar to that shown in Fig
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`1D 192/194 formed in all intermediate layers
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`such shields can be connected to one of the
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`capacitors terminals [in this case terminal B can be chosen to be connected to form a second
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`part of the second node]).
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`Regarding claim 3, Fong discloses:
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`wherein the shield capacitor portion includes a first node shield plate formed in the third
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`conductive layer and a second node shield plate formed in the fourth conductive layer and
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`Application/Control Number: 12/276,289
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`Page 4
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`Art Unit: 2894
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`further comprising a first conductive curtain extending from the first node shield plate to the
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`second node shield plate and a second conductive curtain extending from the first node shield
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`plate to the second node shield plate (refer to Figure set 2A-2C
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`specifically Fig. 2B - col 5
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`lines 36-42; shield top-most layer, bottom-most layer and side shield similar to that shown in Fig
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`1D 192/194 formed in all intermediate layers
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`such shields can be connected to one of the
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`capacitors terminals [in this case terminal B can be chosen to be connected to form a second
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`part of the second node]).
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`Regarding claim 4, Fong discloses:
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`the first node is a top node of the switching capacitor and the second node is a bottom
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`node of the capacitor (refer to claim 1). In regards to the claimed limitation which states
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`“switching capacitor” the examiner does not give patentable weight since it has been held that a
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`recitation with respect to the manner in which a claimed apparatus is intended to be employed,
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`in the instant application as a switching capacitor, does not differentiate the clamed apparatus
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`from a prior art apparatus satisfying the claimed structural limitations. Ex Parte Masham, 2
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`USPQ F.2d 1647 (1987).
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`Regarding claim 11, Fong discloses:
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`wherein the first plurality of conductive elements comprises a first plurality of conductive
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`strips extending along a first direction, the second plurality of conductive elements comprises a
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`second plurality of conductive strips extending along the first direction (Layer E), and the third
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`plurality of conductive elements comprises a third plurality of conductive strips extending along
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`a second direction orthogonal to the first direction (Layer D) (refer to Figs 2B for Layer E and 2C
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`for Layer D).
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`Regarding claim 12, Fong discloses:
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`Application/Control Number: 12/276,289
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`Page 5
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`Art Unit: 2894
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`wherein each of the conductive elements in the third plurality of conductive elements is
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`adjacent to a conductive element electrically connected to and forming a third part of the first
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`node (Fig 2C, Layer D shown with optional connection using Via D layer to Layer E,
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`in this case
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`terminal A of Layer D would be connected to terminals A of Layer E).
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`Regarding claim 13, Fong discloses:
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`a fourth plurality of conductive elements (terminal A) formed in a fifth conductive layer
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`(Layer C) of the IC disposed between the fourth conductive layer (Layer A) and the second
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`conductive layer (Layer D) and electrically connected to (Via C) and forming a fourth part of the
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`first node, the fourth plurality of conductive elements extending along the first direction, and
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`a fifth plurality of conductive elements (terminal B) electrically connected to and forming
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`a third part of the second node formed in the fifth conductive layer extending along the first
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`direction alternating with the fourth plurality of conductive elements in the fifth conductive layer
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`(refer to Fig 2B).
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`Claim Rejections - 35 USC § 103
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`The following is a quotation of 35 U.S.C. 103(a) which forms the basis for all
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`obviousness rejections set forth in this Office action:
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`(a) A patent may not be obtained though the invention is not identically disclosed or described as set
`forth in section 102 of this title, if the differences between the subject matter sought to be patented and
`the prior art are such that the subject matter as a whole would have been obvious at the time the
`invention was made to a person having ordinary skill in the art to which said subject matter pertains.
`Patentability shall not be negatived by the manner in which the invention was made.
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`Claim 2 is rejected under 35 U.S.C. 103(a) as being unpatentable over Fong as in claim
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`1 above, and in further view of Hajimiri US 6,690,570 B2
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`Regarding claim 2, Fong discloses:
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`wherein the third conductive layer is a metal layer of the IC and the fourth conductive
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`layer is a metal layer of the IC, the shield capacitor portion including a first node shield plate
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`Application/Control Number: 12/276,289
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`Page 6
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`Art Unit: 2894
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`formed in the metal layer from a plurality of metal stripes and a second node shield plate formed
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`in the metal layer (Fig 2A, 200 metal layer is depicted as forming all Via and Layers in Figs 28
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`and 2C).
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`Fong does not disclose:
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`the fourth conductive layer is a poly layer
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`Hajimiri discloses a patent from a similar field of endeavor in which:
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`conductive strips can be either metal conducting strips or poly crystalline silicon strips.
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`It would have been obvious to one of ordinary skill in the art at the time the invention was
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`made to understand that the fourth conductive layer taught by Fong could be made of poly as
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`taught by Hajimiri since both metal and poly have been shown by Hajimiri as suitable materials
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`for inclusion as conductive strips of a stacked lC capacitor structure.
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`Claims 19 and 20 are rejected under 35 U.S.C. 103(a) as being unpatentable over
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`Stribely et al. US 6,933,551 B1 in further view of Anthony US 7,439,570 B2
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`Regarding claim 19, Stribley discloses:
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`a first plate formed in a first conductive layer of the IC (Plate 1a);
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`a second plate formed in a substrate of the IC (Diffused plate 10);
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`a gate dielectric layer disposed between the first plate and the second plate (Dielectric
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`10);
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`Stribley does not disclose:
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`a shield plate formed in a second conductive layer of the IC having a perimeter
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`electrically connected the second plate so as to form an electrical shield around the first plate.
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`Anthony discloses:
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`Application/Control Number: 12/276,289
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`Page 7
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`Art Unit: 2894
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`a shield plate (35 shield plate) formed in a second conductive layer of an IC having a
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`perimeter electrically connected to second plate (46 diffused bottom shield plate) in a substrate
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`(refer to Fig 4)
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`It would have been obvious to one of ordinary skill in the art at the time the invention was
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`made to form the shield plate taught by Anthony around the first plate taught by Stribley and
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`connected to the substrate since it is shown that the substrate of Anthony provides a bottom
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`plate for the shield while the substrate also has function as a bottom plate for the capacitor
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`structure taught by Stribley. As a result, the capacitor of Stribely would benefit from the shielding
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`structure taught by Anthony in that the capacitor would have close matching to adjacent
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`capacitors, maintain good linearity, and retain high quality factors while also achieving high
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`efficiency at higher device densities.
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`Regarding claim 20, as in the combination of claim 19 above, Stribley discloses:
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`the first conductive layer is a first poly layer (col 2 line 53; polysilicon), the substrate
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`comprises silicon (col 2 line 40; silicon) and second plate is formed in an N-well (heavier doped
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`region of substrate) of the substrate and
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`Stribley/Anthony do not specifically disclose:
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`the shield plate is formed in a second poly layer of the IC.
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`Anthony does disclose that the bottom shield plate (36) can be implemented with a
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`polysilicon layer as well. As a result of this dislcosure, it would have been obvious to one of
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`ordinary skill in the art at the time the invention was made to understand that the top plate
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`taught by Anthony could be formed using polysilicon since such a material is disclosed a
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`suitable for the same purpose as the bottom plate.
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`Application/Control Number: 12/276,289
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`Page 8
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`Art Unit: 2894
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`Allowable Subject Matter
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`Claims 5-9 and 21-23 are objected to as being dependent upon a rejected base claim,
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`but would be allowable if rewritten in independent form including all of the limitations of the base
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`claim and any intervening claims.
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`Conclusion
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`Any inquiry concerning this communication or earlier communications from the examiner
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`should be directed to ERROL FERNANDES whose telephone number is (571)270-7433. The
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`examiner can normally be reached on Monday - Friday 7:30-5:00 (alt Fri's off).
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`If attempts to reach the examiner by telephone are unsuccessful, the examiner’s
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`supervisor, Kimberly Nguyen can be reached on 571-272-2402. The fax phone number for the
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`organization where this application or proceeding is assigned is 571-273-8300.
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`Information regarding the status of an application may be obtained from the Patent
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`Application Information Retrieval (PAIR) system. Status information for published applications
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`may be obtained from either Private PAIR or Public PAIR. Status information for unpublished
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`applications is available through Private PAIR only. For more information about the PAIR
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`system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private
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`PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you
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`would like assistance from a USPTO Customer Service Representative or access to the
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`automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000.
`
`/ERROL FERNANDES/
`Examiner, Art Unit 2894
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`lKimberly D Nguyen/
`Supervisory Patent Examiner, Art Unit
`2894
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`