PUBLIC
`PUBLIC
`EXHIBIT 4
`EXHIBIT 4
`(Part 31 of 32)
`(Part 31 of 32)
`
`
`PUBLIC
`EXHIBIT 4
`EXHIBIT 4
`(Part 31 of 32)
`(Part 31 of 32)
`
`
`
`
`08847704Expired
`
`
`
`63506591999-09-01|2002-02-26|Granted
`
`
`
`63483931998-08-26|2002-02-19|Granted
`
`
`
`61036071998-09-15|2000-08-15jGranted
`
`
`
`66866622002-05-21|2004-02-03|Granted
`
`
`
`63798681999-04-01|2002-04-30|Granted
`
`
`
`70678902004-09-29}2006-06-27|Lapsed
`
`
`
`68908042003-11-21|2005-05-10{Granted
`
`
`
`67340812001-10-24|2004-05-11|Granted
`
`
`
`70810372003-09-22|2006-07-25|Lapsed
`61532681999-07-29|2000-11-28
`
`
`6940151oo-0030|2005-09-06
`
`
`6784478soo2-0930|2004-08-31
`62509849.0125|2001-06-26
`
`
`16284413998-07-01|2001-09-04
`
`
`61976631999-12-07{2001-03-06
`
`
`61922901998-05-21|2001-02-20
`
`
`61076841999-01-07|2000-08-22
`
`
`60230931997-04-28|2000-02-08
`
`
`61013711998-09-12{2000-08-08
`
`
`60021131998-05-18}1999-12-14
`
`
`55894161995-12-06{1996-12-31
`
`
`68654352003-09-08}2005-03-08
`
`
`56486991995-11-09{1997-07-15
`
`
`
`
`ScheduleB(1)(a)—SemicProcessingA
`
`GrantedUnitedStatesofAmerica
`
`GrantedUnitedStatesofAmerica
`
`GrantedUnitedStatesofAmerica
`
` GrantedUnitedStatesofAmerica
`
`
`
`
`
`
`UnitedStatesofAmericaLithographicProcessForDeviceFabricationUsingDark-FieldHlumination
`
`
`
`UnitedStatesofAmericaMethodoftranslatinganetdescriptionofanintegratedcircuitdie
`
`
`
`UnitedStatesofAmericaThickOxideRegionInASemiconductorDevice
`
`
`
`
`UnitedStatesofAmericaASemiconductorDeviceBarrierLayer
`
`UnitedStatesofAmerica
`
`UnitedStatesofAmerica
`
`UnitedStatesofAmerica
`
`UnitedStatesofAmerica
`
`UnitedStatesofAmerica
`
`UnitedStatesofAmerica
`
`UnitedStatesofAmerica
`
`UnitedStatesofAmerica
`
`UnitedStatesofAmerica
`
`UnitedStatesofAmerica
`
`
`
`
`
`
`SemiconductorDeviceHavingRegionsOfInsulatingMaterialFormedInA
`ACapacitorInAnIntegratedCircuitAndAMethodOfManufacturingAn
`
`
`
`
`
`
`
`ArticleComprisingEnhancedNanotubeEmitterStructureAndProcessFor
`
`
`
`SystemandMethodofManufacturingSemicustomReticlesUsingReticle
`
`
`
`
`
`DeuteratedDielectricAndPolysiliconFilm-BasedSemiconductorDevices
`
`
`
`
`SystemAndMethodOfManufacturingSemicustomIntegratedCircuits
`
`
`
`
`
`FieldEmissionDevicesEmployingImprovedEmittersOnMetalFoilAnd
`
`SemiconductorSubstrateAndProcessOfMakingTheDevice
`Metal-Oxide-SemiconductorDeviceFormedinSilicon-On-insulator
`
`
`
`
`
`
`Shallowtrenchisolationstructureforlaserthermalprocessing
`
`
`
`iiesFromALibraryAndInterconnectReticles
`
`
`
`ProcessForFormingIntegratedCapacitors
`
`AndMethodOfManufactureThereof
`
`ManufactureOfMosfetDevices
`
`ArticleComprisingAnInductor
`
`DamasceneProcess
`
`IntegratedCircuit
`
`10719195
`
`10668021
`
`09999848
`
`
`
`UnitedSta
`tesofAmerica
`
`Padconditionersetup
`
`08555594UnitedStatesofAmerica
`
`Expired
`
`
`
`MethodsForMakingSuchDevices
`
`Expired
`
`Lapsed
`
`Granted
`
`Granted
`
`Control
`
`
`
`
`
`
`
`ApparatusForProcessingSiliconDeviceWithImprovedTemperature
`
`
`
`
`
`Transistors
`
`
`
`
`
`
`
`GrantedUnitedStatesofAmericaSemiconductorDeviceHavingaSignalPinwithMultipleConnections
`
`
`
`
`
`
`
`
`
`
`
`AProcessForFabricatingIntegratedCircuitDevicesHavingThinFilm
`
`Granted
`
`FabricatingArticle
`
`
`
`
`
`
`
`PlateCapacitorStructureAndFabricationMethodThereforInADual
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`09363758GrantedUnitedStatesofAmericaMethodForProducingOrientedPiezoelectricFilms
`
`rant
`
`
`
`08568040
`
`09152189
`
`10658017
`
`09080430
`
`QwoNONO
`n~w
`oO
`
`OQ©
`5a
`aNb
`oO
`
`OQ6
`
`i]lore)NwoN
`
`5
`
`BR
`
`QowowuW
`~uw
`oO
`
`2©
`
`NoOWwonNoe
`
`ran
`
`oOBpwnie)
`NuwBB
`
`OowoBb
`2oeoO&
`
`o
`
`°
`wo
`N
`Ww
`a
`©
`n
`n
`
`bP
`oO
`N
`Dp
`oO
`a
`©
`w
`
`Pp
`
`QONoOae
`aonWw
`
`OooBp
`wiGownNN
`
`2
`wo
`ee
`+
`Oo
`No
`~
`oO
`
`Oo
`16
`Ww
`oO
`oo
`No
`1o
`~
`
`
`
`
`
`
`
`
`
`GrantedUnitedStatesofAmericaSilicon-RichLowThermalBudgetSiliconNitrideForIntegratedCircuits
`
`PATENT
`045216 FRAME 0169
`
`REEL
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`1
`
`
`
`UnitedStatesofAmerica
`
`Order
`
`
`UnitedStatesofAmerica
`
`CriticalDimensions
`
`
`UnitedStatesofAmerica
`
`
`HighQ,IntegratedInductors
`
`
`
`
`
`Plasmatreatmentsystem
`
`
`
`
`
`
`
`ReducedStressTungstenDeposition
`
`
`
`
`
`foassaase—‘seazoia=f1995-09-27|1997-06-24[Expired__[UnitedStatesofAmerica
`
`
`
`
`
` [Granted_|1015188767975252002-05-22|2004-09-28|GrantedUnitedStatesofAmerica
`
`
`
`
`
`0940911563229341999-09-30}2001-11-27crntesUnitedStatesofAmerica
`
`
`
`
`1062949668185162003-07-29|2004-11-16Lapsed_[UnitedStatesofAmerica
`
`
`
`
`
`
`[Expired_|0835578756703761994-12-14|Expired[1997-09-23_|UnitedStatesofAmerica
`
`
`
`
`0917872062180771998-10-26|2001-04-17ccnted_|UnitedStatesofAmerica
`
`
`
`
`0920978763392461998-12-11|2002-01-15crntea_|UnitedStatesofAmerica
`
`
`
`
`
`
`084313555620573,1995-04-28|1997-04-15Expired—_|UnitedStatesofAmerica
`
`
`
`
`
`
`0858166556817631995-12-29expired—_||1997-10-28UnitedStatesofAmerica
`
`
`
`
`
`
`0987882068757022001-06-11|2005-04-05[Lapsed_|UnitedStatesofAmerica
`
`
`
`
`
`
`0875147257367491996-11-19lExpired—_||1998-04-07UnitedStatesofAmerica
`55523551995-10-030895712265567031997-10-24|2003-04-29eaves_|08538317
`
`
`
`
`
`
`
`
`|1996-09-03esores|0928038763235377999-03-292001-11-27
`
`[Granted|1067556917137400__—_—([2003-09-30_|2006-11-21
`1018091068470772002-06-25|2005-01-25cranes_|10767205
`
`
`
`
`
`
`
`
`
`55980561995-01-31[1997-01-280936436662041861999-07-30|2001-03-20cranee|08380774
`
`
`
`Expired|0890397465662241997-07-31[2003-05-20
`
`
`
`70378202004-01-30|2006-05-02|Granted
`
`
`0943014762944651999-10-29|2001-09-25crntes_|083504395545916_—=—_—_—«|1994-12-06|1996-08-13
`
`
`
`
`JExpired|09388166|2002-08-20crntes_|64361871999-09-01
`
`
`
`
`
`ScheduleB(1)(a)—SemicProcessingA
`
`
`
`
`
`
`
`UnitedStatesofAmericaMultilayerPillarStructureForImprovedFieldEmissionDevices
`
`
`UnitedStatesofAmericaACapacitorForAnIntegratedCircuit
`
`
`UnitedStatesofAmericaBypassLoopGasFlowCalibration
`
`
`
`UnitedStatesofAmericaProcessForDeviceFabrication
`
`
`
`CompensationOfTheTemperatureCoefficientOfTheDielectricConstant
`
`
`
` ScanningElectronMicroscopeSystemAndMethodOfManufacturingAn
`
`
`
`FabricationProcessForASemiconductorDeviceHavingAMetalOxide
`
`
`
`
`Cross-FillPatternForMetalFillLevels,Power-SupplyFiltering,AndAnalog
`
`DielectricMaterialWithAHighDielectricConstant,AnnealedWithA
`
`
`CapacitorForASemiconductorDeviceAndMethodForFabrication
`
`
`
`
`TungstenSilicideNitrideAsAnElectrodeForTantalumPentoxideDevices
`
`
`MethodOfManufacturingAnintegratedCircuitUsingAScanningSystem
`
`
`
`
`
`MethodOfMakingIntegratedCircuitCapacitorIncludingTaperedPlug
`
`
`
`
`CombinedPhotogateAndPhotodiodeActivePixelImageSensor
`
`
`
`
`MethodForMakingIntegratedCircuitsIncludingFeatureswithA
`
`
`
`
`MethodForMakingIntegratedCircuitsHavingFeaturesWithReduced
`
`
`OpticalStructuresAndMethodsForX-RayApplications
`
`
`
`
`MethodForMakingBipolarTransistorsHavingIndiumDopedBase
`
`
`
`
`ProcessForFabricatingArticleHavingSubstantialThree-Dimensional
`
`
`ImprovedWehneltGunForElectronLithography
`
`
`
`
`
`IntegratedCircuitDeviceWithInductorIncorporatedTherein
`
`
`MethodologyForMonitoringQualitySolvent
`
`
`
`
`
`
`Selectivehighkdielectricsremoval
`
`RelativelySmal!C
`
`alDimension
`
`
`
`UnitedStatesofAmerica
`
`<
`
`UnitedStatesofAmerica
`
`
`CircuitShielding
`
`
`
`UnitedStatesofAmerica
`
`Therefor
`
`
`
`Self-PoweredDevices
`
`
`
`AndAScanningSystem
`
`
`
`
`
`BufferedAnnealProcess
`
`x
`
`
`UnitedStatesofAmerica
`
`IntegratedCircuit
`
`
`UnitedStatesofAmerica
`
`OfBariumStrontiumTitanate
`
`
`
`PATENT
`045216 FRAME 0170
`
`REEL
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
` [Granted|08344318Expired|United[Expired|0942015708366952«|5589303Expired|United1994-08-05|1995-12-05StatesofAmericafog366529Expired«(54895521994-12-30[1996-02-06[UnitedStatesofAmerica1994-12-30[1996-12-31[Expired[UnitedStatesofAmerica108879926|Expired[61410501997-06-20[2000-10-31[UnitedStatesofAmerica«67410191999-10-18[2004-05-25|Granted[UnitedStatesofAmerica 0839349456591811995-03-02[1997-08-19|ExpiredStatesofAmerica0893512159813191997-09-22|1999-11-09[UnitedStatesofAmerica56565101994-11-22|1997-08-12[ExpiredUnitedStatesofAmerica
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`0877549060177871996-12-31{2000-01-25Expired|UnitedStatesofAmerica
`
`
`
`108373732:[56314621995-01-17[1997-05-20
`
`
`
`
`0894887459124981997-10-10[1999-06-15[Expired_|09094920
`
`
` [expired|085874260874971964917321996-11-15[2002-12-10|1997-04-29core56251991996-01-16|Expired|08381262[Expired|104214210893200559034931997-09-17[1999-05-1155613401995-01-31{1996-10-01cipro
`
`
`
`
`
`
`
`
`
`
`
`
`
`58211471995-12-11[1998-10-130836651555325101994-12-30[1996-07-02[Expired|08570429
`
`
`
`
`
`
`62007341998-06-15|2001-03-13
`
`
`
`
`7442113003-04-23[2008-10-28|Lapsed—_|2000-06-02
`
`
`
`1045548974297492003-06-04|2008-09-30crated
`
`
`
`
`2000-02-07[2002-06-1166207202000-04-10[2003-09-16|Granted|6404027|Granted_|
`
`
`
`
`
`
`
`
`65382832000-07-07{2003-03-25|Granted
`
`
`
`
`
`[2002-12-31{Granted
`
`98-09-10[2000-11-21{Granted
`
`
`
`
`
`10-31|1997-04-22|ExpiredUnitedStatesofAmerica
`
`
`1999-11-02StatesofAmerica1999-10-19|GrantedUnitedStatesofAmericaExpired|United
`
`
`
`
`
`
`ScheduleB(1)(a)—SemicProcessingA
`
`
`
`UnitedStatesofAmericaon-BasedDevices
`
`UnitedStatesofAmerica
`
`UnitedStatesofAmerica
`
`UnitedStatesofAmerica
`
`UnitedStatesofAmerica
`
`UnitedStatesofAmerica
`UnitedStatesofAmerica
`
`
`UnitedStatesofAmerica
`
`UnitedStatesofAmerica
`
`
`
`
`
`Silicon-On-Insulator(SOI)SemiconductorStructureWithTrenchIncluding
`
`
`
`
`
`
`ArticleComprisingComplementaryCircuitwithInorganicN-Channeland
`
`
`
`
`
`
`FieldEmissionDisplayHavingCorrugatedSupportPillarsandMethodfor
`
`
`
`
`
`AMethodForReducingDishingRelatedIssuesDuringTheFormationOf
`
`
`
`
`
`
`Strained-siliconforCMOSdeviceusingamorphoussilicondepositionor
`
`
`
`
`DifferentialTemperatureControlInChemicalMechanicalPolishing
`
`
`
`
`Self-AlignedOpaqueRegionsForAttenuatingPhase-ShiftingMasks
`
`
`
`
`
`Electronfieldemitterscomprisingparticlescooledwithlowvoltage
`
`
`
`MethodForManufacturingGateOxideCapacitorsIncludingWafer
`
`
`
`
`MethodOfManufacturingAnIntegratedCircuitUsingChemical
`
`
`
`
`ReverseSideEtchingforProducingLayerswithStrainVariation
`
`
`MetalToMetalCapacitorApparatusAndMethodForMaking
`
`
`METHODFORFABRICATINGSEMICONDUCTORDEVICES
`
`
`
`
`CapacitorComprisingImprovedTaox-BasedDielectric
`
`
`
`
`BacksideDielectricAndImplantationElectronFlood
`
`
`
`
`MultipleLayerTungstenDepositionProcess
`
`
`ArticleComprisingAnOxideLayerOnGaN
`
`HighDielectricConstantGateOxidesForS
`
`WaferHandlingApparatusandMethod
`
`
`
`
`Visualwearconfirmationpolishingpad
`
`
`ArticleComprisingalpha-Hexathieny|
`
`MethodOfFormingAT-ShapedGate
`
`
`
`ShallowTrenchIsolationStructures
`
`
`MethodOfEtchingSiliconNitride
`
`integratedCircuitWithTwinTub
`
`InterconnectionsToCopperIC's
`
`
`Laser-AssistedParticleAnalysis
`
`
`IntegratedCircuitFabrication
`
`r PRUEYPeT rirtro6ThaUL SS ry
`
`
`
`
`
`
`
`
`
`
`PFfFkPa PongosFou PuPegtogtlgo ve gt
`
`
`UnitedStatesofAmerica
`
`AConductiveLayer
`
`
`
`
`
`UnitedStatesofAmerica
`
`UnitedStatesofAmerica
`
`Manufacturing
`
`
`UnitedStatesofAmerica
`
`OrganicP-Channel
`
`
`
`UnitedStatesofAmerica
`
`
`UnitedStatesofAmerica
`
`
`siliconepitaxialgrowth
`
`
`
`emittingmaterial
`
`
`
`MechanicalPolishing
`
`
`
`
`
`MOSImageSensor
`
`
`
`UnitedStatesofAmerica
`
`Processes
`
`
`
`
`
`ArticleComprisingAligned
`
`PATENT
`045216 FRAME 0171
`
`REEL
`
`
`
`°©Bb
`wnBb
`°NN
`
`Dnnswi
`QoN“JPR
`
`bw
`
`o
`
`‘
`v
`Lyn
`
`owe©09Nvb
`
`Q©
`
`On©
`aSJ
`@coua
`
`b©©a
`
`]
`faa
`N
`
`-12-01
`
`OooOwwNB
`
`~wo
`
`uwnr
`Nueb
`oo
`oO
`
`bi
`
`te)io
`5
`
`1997-05-23
`
`6500729
`
`HEi
`
`i i
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`poasaas—_|6187647ooo.10422001-02-13crates_|UnitedStatesofAmerica
`
`osseoos|6329281ooo.a2.08|2001-12-11craneo|UnitedStatesofAmerica
`
`
`
`
`89125762NI-1517292000-12-04|2002-03-11|Lapsedwn
`
`
`
`9211478512798882003-05-302007-04-21eeee
`
`
`
`
`
`
`10698167__—_—[6930362[2003-10-30[Lapsed[2005-08-16__|UnitedStatesofAmerica
`
`
`
`89106001Ni-1459422000-03-31|2001-12-11eeeee
`
`
`
`
`1069307868945242003-10-23|2005-05-17Granted—_|UnitedStatesofAmerica
`
`
`
`
`90108664NI-1662242001-04-11|2003-03-18layatrowan
`
`
`
`
`
`091100151NI-1932737002-01-08[2004-01-01|Granted[Taiwan
`
`
`
`[lapsed_|90121457NI-1805352001-08-30|2003-07-01eeee
`
`
`
`
`9210857213005845003-04-14|lapsed[Taiwan|2008-09-01
`
`
`
`
`9100425NI-1385002000-02-16}2001-12-05eeeee
`
`
`
`|lapsed_|9212635013159092003-09-24|Grantedewer|2009-10-11
`
`
`
`
`
`
`88104885NI-1388737999-03-29[2001-08-21|Granted[taiwan
`
`
`
`
`
`
`1036852069592582003-02-18|2005-10-25lapsed—_‘|UnitedStatesofAmerica
`
`
`
`090121356NI-189135001-08-29|2003-11-01
`jgo11s497_——[NI-152144[Lapsed_|2000-11-13|2002-03-21
`
`
`
`
`
`
`09311660413195982004-06-09[2010-01-11
`88105177NI-1226961999-04-01|2000-11-01ence_|
`
`
`
`
`6794304oo2.0731|2004-09-21cranee|UnitedStatesofAmerica
`[2001-08-29|fraiwan
`
`ArticleComprisingADielectricMaterialOfZr-Ge-Ti-OOrHf-Ge-Ti-OAnd
`
`
`
`
`Methodandapparatusforreducingmicrotrenchingforborderlessvias
`
`
`
`MethodOfManufacturingLateralHigh-QInductorForSemiconductor
`
`
`MethodsForFabricatingAMultilevelInterconnectionForAnIntegrated
`
`
`
`
`
`AProcessForFabricatingIntegratedCircuitDevicesHavingThinFilm
`
`
`
`ApparatusAndMethodForContinuousDeliveryAndConditioningOfA
`
`
`
`LowKDielectricInsulatorandMethodofFormingSemiconductorCircuit
`
`
`CapacitorForASemiconductorDeviceAndMethodForFabrication
`
`
`
`
`
`
`LocalAreaAlloyingForPreventingDishingOfCopperDuringChemical
`
`
`
`
`Silicon-RichLowThermalBudgetSiliconNitrideForIntegratedCircults
`
`
`
`MethodForMakingAnintegratedCircuitIncludingAlignmentMarks
`
`
`
`PlateCapacitorStructureAndFabricationMethodThereforInADual
`
`
`
`
`
`ApparatusForProcessingSiliconDeviceWithImprovedTemperature
`
`
`Metal-Oxide-SemiconductorDeviceFormedinSilicon-On-Insulator
`
`
`
`
`FieldPlatedResistorWithEnhancedRoutingAreaThereover
`
`
`
`
`MethodOfEliminatingAgglomerateParticlesInAPolishingSlurry
`
`MethodsandstructureforICtemperatureself-monitoring
`
`
`ImprovedWehneltGunForElectronLithography
`
`
`
`CircuitDeviceUtilizingASelectiveOverlayer
`
`
`
`
`MethodsAndApparatusForTestingIntegratedCircuits
`
`
`
`OverlayMetrologyUsingScatterometryProfiling
`
`SemiconductorDeviceFreeOfLDDRegions
`
`
`createdinadualdamasceneprocess
`
`
`
`Calciumdopedpolysilicongateelectrodes
`
`
`
`ASemiconductorDeviceBarrierLayer
`
`
`
`
`
`Taiwan
`
`Control
`
`
`
`DamasceneProcess
`
`1
`
`Structures
`
`
`
`
`
`HeterojunctionBipolarTransistor
`
`ary
`°nos
`BewoN
`oO
`
`t
`
`
`
`Daisychaingangtesting
`
`
`
`
`UnitedStatesofAmerica
`MethodOfMakingTheSame
`
`Devices
`
`
`
`PolishingSlurry
`
`Therefor
`
`Transistors
`
`PATENT
`045216 FRAME 0172
`
`REEL
`
`
`
`
`
`
`
`MechannicalPolishing(CMP)
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`1019990058177
`
`1019990035568
`
`~
`Oo
`on
`Ww
`oO
`a
`
`1020000046601
`
`1019990046565
`
`ypu
`NTO
`oO
`aa
`~
`rR
`
`20000051024
`
`=
`u
`n
`~
`Oo
`wm
`
`10358968
`
`20000073674
`
`nIo
`OLS
`COE
`nin
`win
`~s]SNy] w
`
`1019990003869
`
`9842256
`
`bP
`an
`N
`Ww
`N
`
`Ow
`OW
`on
`I
`Oo
`ww
`
`
`
`H
`
`
`
`Korea,Republicof
`
`{KR)
`
`
`
`Korea,Republicof
`
`
`
`Korea,Republicof
`
`Interconnect
`
`
`
`SemiconductorStructure
`
`
`
`MechannicalPolishing(CMP)
`
`
`Japan
`
`
`
`
`
`
`
`
`
`
`
`
`
`__[reoroee1[one0929lapsedAnIntegrated1020010053350/|10-8616652001-08-31{2008-09-29|LapsedKorea,Republicof(KR)AMethodTherefor=>CircuitIncludingESDCircuitsForAMulti-ChipModuleAndwifg0107369_|Ni-148715___—_—*42000-04-19[2002-01-11[Lapsed[Taiwan‘AMethodOfFormingAMulti-LayeredDual-PolysiliconStructureRoomess
`
`
`
`
`
`19990017990_|1999-05-19|2002-04-24[Lapsed|MethodOfEliminatingAgglomerateParticlesInAPolishingSlurryw
`
`
`
`
`
`
`
`
`1020010052999j10-870256[2001-08-30[2008-11-19|Granted|Korea,Republicof{KR)FieldPlatedResistorWithEnhancedRoutingAreaThereover-<<
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`1020000024335g500342000-05-082008-07-29[Lapsed—_|Korea,Republicof{KR)ImprovedWehneltGunForElectronLithography2ProcessFor
`
`
`
`
`
`
`
`
`2007-03-08|6950282000-05-12CapacitorsFor1019990035378srasae__lisoo.oe2s[pooroeashsnsdInterconnectsa1020000025275[Lapsed|DamasceneIntegratedCircuitsWw
`
`
`
`
`
`
`
`
`
`
`1020000033163|3922782000-06-16{2003-07-09|LapsedProcessForFabricatingVerticalTransistors
`
`
`
`
`
`
`[lapsed|9781732|Lapsed5546481997-12-31[2006-02-16_|Korea,Republicof
`
`
`
`
`
`
`200000445426879792000-08-01[2007-02-21Lapsed—_[Korea,Republicof
`
`
`
`
`
`
`2005009097810-12066282005-09-29[2012-11-23|Granted_|Korea,Republicof
`
`
`
`
`
`
`1020040078024|10-10451952004-09-30[2011-06-23|Granted_|Korea,Republicof
`
`
`
`
`1019990002654+|30742198401922989701998-09-28|2001-06-05lapsed1999-01-28{2001-08-21
`
`
`
`200111207845487592001-04-11lances|Ww
`
`
`
`
`
`
`
`03240721999-02-05{2002-01-29|GrantedElectronicApparatus
`
`
`1999-12-16|2007-05-03|Granted 2000-08-11[2004-02-25 2000-08-31{2004-11-02he|1999-10-26[2006-07-03apse_|1757[Lapsed_|1999-08-26lapeea|716436{2007-04-03
`
`
`
`
`
`
`
`
`
`
`
`
`
`1998-10-09[2005-09-06[Lapsed_|Korea,RepublicofArticleComprisingAnOxideLayerOnGaN
`
`
`
`2003-02-04|2006-01-17Lapsed|UnitedStatesofAmerica
`
`
`
`2000-12-06|2004-06-17|LapsedKorea,Republicof(KR)
`
`2010-07-16
`
`
`
`
`ScheduleB(1)(a)—SemicProcessingA
`
`Korea,Republicof{KR)
`
`Korea,Republicof(KR)
`
`Korea,Republicof(KR)
`
`Korea,Republicof(KR)
`
`
`
`LowKDielectricInsulatorandMethodofFormingSemiconductorCircuitKeco
`
`
`
`
`SemiconductorDeviceFabricationHavingCopperOo
`
`
`
`
`
`
`SemiconductorDeviceHavingRegionsOfInsulatingMaterialFormedInA
`
`
`
`MethodOfManufacturingAnIntegratedCircuitUsingAScanningSystem
`AMethodOfFormingAnAlignmentFeatureInOrOnAMulti-Layered
`
`
`
`
`
`
`
`
`LocalAreaAlloyingForPreventingDishingOfCopperDuringChemical
`
`
`DeviceAndMethodOfFabricatingViasForULSIMetallizationAnd
`
`SemiconductorSubstrateAndProcessOfMakingTheDevice
`
`
`
`
`Alternatingaperturephase-shiftmaskfabricationmethod
`
`
`ElectrochemicalAbatementOfPerfluorinatedCompounds
`
`DeepSub-MicronMetalEtchWithIn-SituHardMaskEtch
`
`
`
`
`MethodsAndApparatusForTestingIntegratedCircuits
`
`
`SiliconICContactsUsingCompositeTINBarrierLayer
`
`
`ThickOxideRegionInASemiconductorDevice
`
`
`InductorFormedInAnIntegratedCircuit
`
`IntegratedCircuitWithTwinTub
`
`AndAScanningSystem
`
`
`
`conStructures!nIntegrat
`
`edCircuits
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`raises—_|1999-08-26sooo.c2n|LapsedramonNI-151235MethodForMakingDual-PolysiliconStructuresInIntegratedCircuits
`
`
`
`
`
`
`
`1028705630230901998-10-08|2000-01-14|Lapsedjapan‘ArticleComprisingAnOxideLayerOnGaN
`
`
`
`
`
`eerieNI-1291461999-10-26poor.0c0n|LapsedrowerAndAScanningSystem
`
`
`
`
`
`1100591130624851999-01-13[2000-04-28|LapsedapanSemiconductorDevice
`
`
`
`
`susasso035503151999-05-17|2004-04-30|LapsedlpnControl
`9210857112798722003-04-14|2007-04-21|Lapsedramen|
`
`
`
`
`
`
`
`
`89125642NI-1653322000-12-01|2002-10-01{Lapsedhewn
`
`
`
`
`
`1030347137202011998-10-26}2005-09-16jLapsedJapan
`soiz0en|NI-179943
`
`oooisz2a23445557
`asia3725742
`
`097140006607967
`
`101063773737277
`1020030033218
`2000-05-24|2003-06-27|Grantedjen
`
`
`1999-09-17|2005-09-30jLapsedfan
`
`
`2001-08-24|2003-06-21|Lapsedramen
`
`
`
`2003-05-24poroa220|GrantedKorea,Republicof(KR)
`
`2000-12-08poz.020n|LapsedJapan
`
`1999-12-13oon.0728|LapsedJapan
`
`
`
`1998-04-16|2005-11-04|GrantedJapan
`2003-03-19aoos.052|Granted
`
`
`
`2000-11-15|2003-08-19|Granted
`
`-IntegratedCircuit
`StatesofAmerica
`United
`
`UnitedStatesofAmerica
` Titanium-Tantalum
`
`
`BarrierLayerFilmAndMethodForFormingTheSame
`
`
`ArticleComprisingADielectricMaterialOfZr-Ge-Ti-OOrHf-Ge-Ti-OAnd
`
`
`AnintegratedCircuitIncludingESDCircuitsForAMulti-ChipModuleAnd
`
`
`
`
`ScanningElectronMicroscopeSystemAndMethodOfManufacturingAn
`
`
`
`MethodOfManufacturingAnIntegratedCircuitUsingAScanningSystem
`
`
`
`
`
`
`Methodintegratedcapacitorandcircuitformeasurementwithdigital
`
`
`AMethodOfFormingAnAlignmentFeatureinOrOnAMulti-Layered
`
`
`
`
`MethodForMakingAnIntegratedCapacitorIncludingCircuitTantalum
`
`
`
`
`
`DeuteratedDielectricAndPolysiliconFilm-BasedSemiconductorDevices
`
`
`MethodOfMakingAnArticleComprisingAnOxideLayerOnAGaAs-
`
`
`
`
`
`ApparatusForProcessingSiliconDeviceWithImprovedTemperature
`
`
`
`MethodForMakingAnIntegratedCircuitIncludingAlignmentMarks
`
`
`
`AbnormalLine/SpaceThroughSignalPhotoresistProfileDetection
`
`
`
`
`
`
`
`AbnormalPhotoresistLine/SpaceThroughSignalProfileDetection
`
`
`
`
`
`
`
`Processforformingplanarizedisolationtrenchinintegratedcircuit
`
`structureonsemiconductorsubstrate
`
`ProcessingofMetrologyWaveform
`
`AndMethodOfManufactureThereof
`
`ProcessingofMetrologyWaveform
`MethodOfMakingTheSame
`
`BasedSemiconductorBody
`
`SemiconductorStructure
`
`
`
`ideNitrideAsAnElectrodeForTantalumPentoxideDevices
`
`PATENT
`045216 FRAME 0174
`
`a °b
`
`o25o
`
`11353614
`
`-
`w
`£
`~
`£
`~
`wo
`
`10392206
`
`n
`wo
`oO
`~
`nn
`~
`Ww
`
`2000373648
`
`wnN
`°oeWwwwuw
`
`
`
`wwow
`06
`
`
`
`AMethodTherefor
`
`Tungsten
`
`readout
`
`REEL
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`1020000021415
`
`1019970060838
`
`9815164
`
`9834393
`
`1019990017300
`
`19990039502
`
`1019990056953
`
`20030041375
`
`1020010018579
`
`94128975
`
`09360176
`
`09283277
`
`11207606
`
`11160696
`
`10171971
`
`11141016
`
`8262805
`
`Wiwtew]w
`n 00|Go wl wl ele
`
`
`~
`HDpUjpo
`WW
`n
`Hl opuiyomn
`uw
`WOlRIiw
`“]
`oO
`Os
`XI wy
`BINT RIA
`wpa oy w
`w
`SL
`nn] O
`wis
`N
`Mio], op,o
`b
`NY 2
`Qiujpu]
`oS
`~
`WIN|™
`weIloO
`n
`dyn] wy w
`wo
`ApREw
`PTW
`PR
`WOPpPpeyr
`S 8 ISIs]ele
`NL
`Rp
`a] wo
`S
`ISIS
`[sig B18
`oO wept
`opr
`Ww
`
`
`
`
`_|2010-10-12lapse|roosoorsans_|10-1099907|2011-12-21lapses|Korea,2004-09-23Republicof(KR)
`
`
`
`
` |2007-08-24lapses|1067693468383792003-09-30{2005-01-04_UnitedStatesofAmerica
`
`
`
`
`
`
`20030031929|10-09779472003-05-20[2010-08-18|Granted_|Korea,Republicof(KR)
`
`
`
`
`
`aooassacas_|soso262003-09-26|2012-07-13lapsed[apo
`
`
`
`eseosao_esarasy2000-05-30{2003-03-04cated
`
`10200100405332001-07-06
`
`
`1020030067833_|10-9884462003-09-30
`il
`
`
`
`
`
`1999-07-22}2005-07-15seapanApparatusandMethodforintegratedCapacitorCircuitWithVariable
`
`
`
`
`
`
`1999-05-21|2004-04-30lapsedapanMethodOfEliminatingAgglomerateParticlesInAPolishingSlurry
`
`1997-10-16|2001-01-26lapsedJapanIntegratedCircuitDeviceWithIncorporatedInductorTherein
`
`
`
`
`
`
`
`
`
`
`
`
`1999-06-08}2005-03-11lapsedapanSingleCrystalSiliconOnPolycrystallineSilicon
`
`Soot34[ROTE-OTATlapsed[TalwaruaeorprovedWatching
`
`
`SSOTAEE[RDOTATD[eratedapatertedGrauWatTwinTb
`
`
`
`
`
`
`
`
`
`2001-04-09|2008-09-03Republicof(KR)2003-06-25|2008-02-04jLapsedKorea,Republicof(KR)Lapsed_|Korea,
`
`
`
`
`
`2000-04-22|2007-03-15LapsedKorea,Republicof(KR)1997-11-18{2005-09-06lapsed|Korea,Republicof(KR)
`
`
`
`
`
`
` [Lapsed_|1998-04-28}2001-08-20|LapsedKorea,Republicof(KR)
` 1999-09-15|2006-09-28lapsed|1999-05-14
`
`
`
`1998-08-25|2003-02-13
`
`|2001-07-18{Lapsed
`ProcessingA
`
`
`ScheduleB(1)(a)—Semic
`
`Korea,Republicof(KR)
`
`Korea,Republicof(KR)
`
`Korea,Republicof(KR)
`
`Korea,Republicof(KR}
`
`Korea,Republicof(KR)
`
`UnitedStatesofAmerica
`
`Korea,Republicof(KR)
`
`
`
`CompensationOfTheTemperatureCoefficientOfTheDielectricConstant
`
`
`
`
`Silicon-On-insulator(SO!)SemiconductorStructureWithTrenchIncluding
`
`
`
`
`
`DeuteratedDielectricAndPolysiliconFilm-BasedSemiconductorDevices
`
`
`
`
`
`
`
`Processforreducingimpuritylevels,stress,andresistivity,andincreasing
`
`
`
`
`
`ApparatusForProcessingSiliconDeviceWithimprovedTemperature
`
`CapacitorForASemiconductorDeviceAndMethodForFabrication
`
`
`
`Methodforenhancinganti-reflectivecoatingsusedinphotolithographyof|
`
`
`
`PlateCapacitorStructureAndFabricationMethodThereforInADual
`
`
`
`Metal-Oxide-SemiconductorDeviceIncludingABuriedLightly-Doped
`
`
`
`PlateCapacitorStructureAndFabricationMethodThereforInADual
`
`
`
`AMethodOfFormingAMulti-LayeredDual-PolysiliconStructure
`
`
`grainsizeofcopperfillerintrenchesandviasofintegratedcircuit
`
`
`
`
`
`IntegratedCircuitDeviceWithIncorporatedInductorTherein
`
`
`THINFILMCAPACITORSANDPROCESSFORMAKINGTHEM
`
`
`
`structurestoenhanceelectricalperformanceofcopperfiller
`
`AndMethodOfManufactureThereof
`
`
`
`ASemiconductorDeviceBarrierLayer
`
`ManufactureOfMosfetDevices
`
`AConductiveLayer
`
`DamasceneProcess
`
`electronicdevices
`
`’
`
`1
`
`i
`
`1
`
`if
`
`fat
`
`
`
`DrainRegion
`
`
`
`DamasceneProcess
`
`Control
`
`
`
`InterconnectionsToCopperIC's
`
`
`
`IntegratedCircuits
`
`PATENT
`045216 FRAME
`
`0175
`
`REEL
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`ra
`
`oO5onGoPRb
`
`oo
`
`2002274695
`
`PP
`oONwo
`oO
`Bee)N
`
`wafer
`
`
`
`DrainRegion
`
`LithographicPro
`
`
`
`
`
`
`
`
`
`AMetalSilicateGateDielectricLayer
`
`oO0
`
`~OoPR
`msoO©00©
`
`ab
`
`
`
`ElectronicApparatus
`
`
`
`SemiconductorStructure
`
`
`
`ManufactureOfMosfetDevices
`
`
`
`
`
`MethodForProducingTaperedLines
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`09735084jeseeeia[2000-12-11[2003-07-01[Lapsed_|UnitedStatesofAmerica|Etchresistantshallowtrenchisolationinasemiconductorwafer
`
`
`
`
`
`2000120437[40385302000-04-21[2007-11-16|GrantedHapanAMethodOfFormingAMulti-LayeredDua!-PolysiliconStructure
`
`
`
`
`
`
`
`
`
`101530112002-05-21Abandoned|UnitedStatesofAmericaSiliconHavingOxynitrideCapsOverCloselySpacedApartMetalLines
`
`
`
`
`
`
`700510078169X|ZL200510078169.X|2005-06-17_|2009-09-30rapsed[chingThickOxideRegionInASemiconductorDevice
`
`
`
`
`
`
`
`7005101096430|ZL200510109643.0[2005-09-14|2012-05-30lapsed[chingGuardRingforImprovedMatching
`
`
`
`
`|lapsed_|1027511733863851998-09-29|2003-01-10Tapsedfapan
`
`
`
`
`
`
`
`
`
`37740881999-09-14|2006-02-24200037241147495372000-12-07_|2011-05-27lanes[mon|11260600lapsed(apan
`
`
`
`200428335249487562004-09-29lapsed—papan|2012-03-16
`
`
`
`
`200314556749644002003-05-23Lapsedloon|2012-04-06
`
`
`
`
`
`
`10406847[7005217_————«|2003-04-04|2006-02-28[Lapsed_[UnitedStatesofAmerica
`
`
`
`
`200526615749444142005-09-14lapsediapan[2012-03-09
`
`
`
`
`
`09088801e211517,1998-06-02}2001-04-03Granted_|UnitedStatesofAmerica
`30840151999-02-02|2000-06-30200026514439585062000-09-01|2007-05-18a|11024534
`
`
`
`
`
`
`
`
`
`
`200009371133878882000-03-302003-01-10epses—_[ioan
`
`
`
`
`200427882055473612004-09-27|2014-05-23psoasine
`
`
`
`
`200124751751779242001-08-17|2013-01-18epsee[pan
`
`
`
`
`68641412003-06-03|2005-03-08|GrantedUnitedStatesofAmerica
`
`
`
`68379672002-11-06}2005-01-04cranesluneStatesofAmerica
`
`
`
`
`
`SemiconductorDeviceHavingRegionsOfInsulatingMaterialFormedInA
`
`AMethodOfFormingAnAlignmentFeatureInOrOnAMulti-Layered
`
`
`
`
`
`Methodofincorporatingnitrogenintometalsilicatebaseddielectricsby
`
`
`
`
`
`Methodandapparatusforcleaningdepositedfilmsfromtheedgeofa
`
`SemiconductorSubstrateAndProcessOfMakingTheDevice
`
`
`
`
`
`
`AbnormalPhotoresistLine/SpaceProfileDetectionThroughSignal
`
`
`Metal-Oxide-SemiconductorDeviceFormedinSilicon-On-insulator
`
`
`
`integratedCircuitStructureHavingLowDielectricConstantMaterialand
`
`
`SiliconIcContactsUsingCompositeTiNBarrierLayer
`
`
`
`
`CapacitorComprisingimprovedTaox-BasedDielectric
`
`
`
`ProcessForFabricatingASemiconductorDeviceHavingAMetalOxideOr
`
`
`
`Metal-Oxide-SemiconductorDeviceIncludingABuriedLightly-Doped
`
`
`
`
`
`
`MultipleOperatingVoltageVerticalReplacement-Gate(VRG)Transistor
`
`
`ThickOxideRegionInASemiconductorDevice
`
`
`
`Electronbeamfaultdetectionofsemiconductordevices
`
`
`Waveform Split-GateMetal-Oxide-SemiconductorDevice
`ProcessingofMetrology
`GuardRingforImprovedMatching
`
`
`cessForDeviceFabricationUsingDark-FieldHlumination
`
`PATENT
`045216 FRAME 0176
`
`
`
`
`
`energizednitrogenionbeams
`
`
`
`Chromelessphaseshiftmask
`
`
`
`
`
`InductorFormed!nAnIntegratedCircuit
`
`REEL
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`|2004-07-20cranes_|10251082|2006-12-12cranes_|United71493402002-09-20StatesofAmerica
`
`
`
`
`
`1026781067841022002-10-09|2004-08-31Granted[UnitedStatesofAmerica
`
`
`
`
`10135383|2007-02-06Granted—_|2002-05-01UnitedStatesofAmerica
`
`
`
`
`1010612867338292002-03-19|2004-05-11Granted_|UnitedStatesofAmerica
`67647492002-07-29091080927998-06-30[2001-01-16[Granted|10207607
`
`
`
`
`
`
`
`0967510964727152000-09-28}2002-10-29crntes
`200227085847971852002-09-18)2011-08-12Lapsed
`
`
`
`
`
`
`
`00300053660023573.42005-11-02|Grantedof)
`
`
`
`
`97303578569729913.91997-05-27}2004-07-21Expiredof)
`
`
`
`
`96306964669607715.91996-09-25[2000-04-12Expiredof)
`
`
`
`acaossr_[seezenne1998-11-24|2011-09-07crntes
`
`
`
`
`_lessaazrsusorossapours2001-08-20|2007-04-11epee_|esouro2
`
`
`
`2010-05-05cranes_|oansaseenone.2000-08-07{2003-11-26apees
`
`
`
`soaoasaso_sseezr021999-05-10|2012-06-20_|Granted
`
`
`
`osoasres—__leoosoae.2000-10-30|2006-08-30_|Lapsed
`
`20063451245579358
`
`
`
`6569739|2003-05-27oe|United2002-08-08StatesofAmerica
`
`
`2004-03-16|Granted|UnitedStatesofAmerica
`
`
`2014-07-18|LapsedJapan
`
`
`
`ScheduleB(1)(a)—SemicProcessingA
`
`
`
`
`
`
`
`
`
`UnitedStatesofAmericaReducedsofterrorrate(SER)constructionforintegratedcircuitstructures
`
`UnitedStatesofAmerica
`
`
`Germany(FederalRepublic
`
`
`Germany(FederalRepublic
`
`
`Germany(FederalRepublic
`
`
`Germany(FederalRepublic
`
`
`Germany(FederalRepublic
`
`
`Germany(FederalRepublic
`
`
`Germany(FederalRepublic
`
`
`Germany(FederalRepublic
`
`
`
`
`
`RobustShallowTrenchIsolationStructuresAndAMethodForForming
`
`Methodtoimprovetheresolutionofaphotolithographysystembyuseof
`
`
`
`
`BipolarJunctionTransistorCompatibleWithVerticalReplacementGate
`
`
`
`
`Maskdefectanalysisforbothhorizontalandverticalprocessingeffects
`
`
`
`Methodofreducingtheeffectofimplantationdamagetoshallowtrench
`
`
`
`
`isolationregionsduringtheformationofvariablethicknessgatelayers
`
`
`
`FieldPlatedResistorWithEnhancedRoutingAreaThereover
`
`
`
`CompensationOfTheTemperatureCoefficientOfTheDielectricConstant
`
`
`
`
`MethodForMakingAnIntegratedCircuitCapacitorIncludingTantalum
`
`
`
`
`HighperformanceSi-GedevicemodulewithCMOStechnology
`
`
`acouplinglayerbetweenthephotoresistandtheARC
`
`
`
`
`ApparatusForProcessingSiliconDeviceWithImprovedTemperature
`
`MethodOfManufacturingAnIntegratedCircuitUsingChemical
`
`
`Methodandapparatusforawaferlevelsystem
`
`
`MethodForMakingFieldEffectDevicesAndCapacitorsWithThinFilm
`
`
`
`
`
` SingleCrystalSiliconOnPolycrystallineSiliconintegratedCircuits
`
`
`
`
`FieldPlatedResistorWithEnhancedRoutingAreaThereover
`
`
`
`ShallowTrenchIsolationStructures
`
`
`ElectrochemicalAbatementOfPerfluorinatedCompounds
`
`
`Laterallyinterconnectingstructures
`
`
`Methodforanalyzingmanufacturingdata
`
`
`MethodForProducingTaperedLines
`
`OfBariumStrontiumTitanate
`
`
`Anti-bindingdepositionring
`DielectricsAndResultin
`
`10288410
`
`10216425
`
`2000-01-06
`
`Pentoxide
`
`of)
`
`of)
`
`
`
`Control
`
`
`
`MechanicalPolishing
`
`2001261004
`
`
`
`
`
`2006-12-22
`
`2001-08-30
`
`
`
`UnitedStatesofAmerica
`
`Transistors
`
`
`
`1999-05-26
`
`of)
`
`of)
`
`gDevices
`
`
`
`
`
`many(FederalRepublic
`
`
`
`Giania:
`
`PATENT
`045216 FRAME 0177
`
`REEL
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`Germany(FederalRepublic
`
`of)
`
`Germany(F
`
`ederalRepublic
`
`of)
`
`
`
`ManufactureTherefor
`
`of)
`
`
`
`
`
`Germany(FederalRepublic
`
`10242165|003105228
`003023272
`83002049
`83045238
`
`1
`0
`
`O
`
`1
`
`9
`
`
`
`10060002Multipatternreticle
`
`coacarsra|60001600.5coo.05.05|2003-03-12|Granted
`
`oxoasean—_|60020011.6ooo.06a|2005-05-11_|Granted
`
`
`sosossore69900624.4oos.o7a2|2001-12-19Granted
`
`
`
`
`seacoanes|69839597.2isseoras|2008-06-1169804380.4ose.0608|2002-03-27sesoasaae|Granted|Granted
`
`
`esrocsues—_|69937217.8oo0.0821|2007-10-03Lapsed
`
`
`
`
`oarosane_\sooao22042000-11-27|2008-06-18|Granted
`
`
`seaoranee|69823450.2sose0529|2004-04-28|Lapsed
`10615558|Granted_|69893312003-07-08[2006-01-24
`
`
`
`
`
`
`
`
`0979232164585082001-02-23|2002-10-01|Granted
`
`
`
`
`0921394865283891998-12-17|2003-03-04|Granted
`
`
`
`
`0999408365490622001-11-21{2003-04-15|Granted
`
`
`
`
`1024216568420422002-09-11|2005-01-11jLapsed
`
`09974251{Lapsed6513376001-10-10{2003-02-04
`
`
`
`
`
`
`
`0997400866583612001-10-10[2003-12-02|Lapsed
`
`
`cana|60030024.22000-03-22|2006-08-16
`
`
`
`0996415766211462001-09-26|2003-09-16
`
`
`
`
`(0303786860042468.52000-05-05|2009-07-01|Granted
`
`
`
`003662169359332001-12-21|2005-08-30
`
`
`
`
`106729966211342002-02-07|2003-09-16|Granted
`9-
`
`
`
`67108512002-01-29|2004-03-23|Granted
`
`
`63038991998-12-11|2001-10-16
`
`
`
`
`
`
`LapsedLithographicProcessForDeviceUsingFabricationDark-FieldI{{tumination
`
`
`
`ScheduleB(1){a)—SemicProcessingA
`
`GrantedUnitedStatesofAmerica
`
`GrantedUnitedStatesofAmerica
`
`
`
`
`
`UnitedStatesofAmericaSubstrateplanarizationwithachemicalpolishingstoplayermechanical
`
`
`
`
`
`
`UnitedStatesofAmericaVacuumsealedRF/microwavemicroresonator
`
`
`
`
`
`
`UnitedStatesofAmericaLiquidlevelheightmeasurementsystem
`
`
`
`
`UnitedStatesofAmericaHeaviestonlyfailpotential
`
`
`UnitedStatesofAmericaHardmaskremoval
`
`
`ArticleComprisingADielectricMateria!OfZr-Ge-Ti-OOrHf-Ge-Ti-OAnd
`
`
`
`
`Methodandapparatusforimprovingthetoleranceofintegratedresistors
`
`
`
`AnIntegratedCircuitHavingAMicromagneticDeviceAndMethodOf
`
`
`ApparatusandMethodforIntegratedCapacitorCircuitWithVariable
`
`
`
`
`
`
`Methodandapparatusforscribingacodeinaninactiveouterclearout
`
`
`Methodandapparatusfortheuseofembeddedresistancetolinearize
`
`
`
`Methodofprotectingacid-catalyzedphotoresistfromchip-generated
`
`
`
`landimprovethematchingpropertiesoftransistors
`
`ImprovedWehneltGunForLithographyElectron
`
`
`
`
`
`ArticleHavingPassiveSelf-Assemblyinductor
`
`
`ArticleComprisingAnOxideLayerOnGaN
`
`
`
`ProcessForFabricatingVerticalTransistors
`areaofasemiconducterwafer
`
`
`
`2001-10-
`
`
`
`UnitedStatesofAmerica
`
`
`
`UnitedStatesofAmerica
`
`of)
`
`of)
`
`1
`
`Lapsed
`
`HERh
`
`
`Germany(FederalRepublic
`
`
`Germany(FederalRepublic
`
`UnitedStatesofAmerica
`
`
`Viscouselectropolishingsystem
`
`
`
`
`
`Germany(FederalRepublic
`
`of)
`
`of)
`
`
`
`
`
`Germany(FederalRepublic
`
`
`
`
`
`Germany(FederalRepublic
`
`
`
`
`
`MOSImageSensor
`
`
`UnitedStatesofAmerica
`
`basiccontaminants
`
`of}
`
`UnitedStatesofAmerica
`
`
`Globalchipinterconnect
`
`
`
`
`
`Germany(FederalRepublic
`
`of}
`
`MethodOfMakingTheSame
`
`of)
`
`
`
`SemiconductorDevice
`
`
`
`
`
`Germany(FederalRepublic
`
`
`
`PATENT
`045216 FRAME 0178
`
`REEL
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`
`StatesofAmerica
`
`2007206087|2012-11-02conesboon|200703485051213482007-08-08
`
`
`
`
`
`
`
`[Granted_|08563688|2000-03-28expres_|United60431391995-11-28StatesofAmerica
`
`
`
`
`0995000866646332001-09-10|2003-12-16Lapsed—_—[UnitedStatesofAmerica
`
`
`
`
`
`
`1060304171607992003-06-24|2007-01-09[Granted_[UnitedStatesofAmerica
`
`
`
`
`
`2005-02-08anees|0937096362287481999-08-10}2001-05-08expres[untStatesofAmerica
`
`
`
`
`
`
`0929178163179481999-04-14|2001-11-20expired_|UnitedStatesofAmerica
`
`
`
`
`
`0933362662647491999-06-15}|2001-07-24lexpired—_[UnitedStatesofAmerica
`
`
`
`
`
` }2000-11-07canes_|0847813357100551995-06-07|1998-01-20|ExpiredUnitedStatesofAmerica
`
`
`52368842007-02-15|2013-04-05peeinon
`je752916__—=—([2002-02-01|2004-06-221000283165284232001-10-26{2003-03-04_10061519
`
`
`
`
`
`
`1000298166136652001-10-26{2003-09-02|Granted
`
`
`
`
`
`
`
`
`
`
`68526482003-05-09200706014848805017999-09-09|2011-12-09[lap
Accessing this document will incur an additional charge of $.
After purchase, you can access this document again without charge.
Accept $ Charge
Still Working On It
This document is taking longer than usual to download. This can happen if we need to contact the court directly to obtain the document and their servers are running slowly.
Give it another minute or two to complete, and then try the refresh button.
A few More Minutes ... Still Working
It can take up to 5 minutes for us to download a document if the court servers are running slowly.
Thank you for your continued patience.
This document could not be displayed.
We could not find this document within its docket. Please go back to the docket page and check the link. If that does not work, go back to the docket and refresh it to pull the newest information.
Your account does not support viewing this document.
You need a Paid Account to view this document. Click here to change your account type.
Your account does not support viewing this document.
Set your membership
status to view this document.
With a Docket Alarm membership, you'll
get a whole lot more, including:
- Up-to-date information for this case.
- Email alerts whenever there is an update.
- Full text search for other cases.
- Get email alerts whenever a new case matches your search.
One Moment Please
The filing “” is large (MB) and is being downloaded.
Please refresh this page in a few minutes to see if the filing has been downloaded. The filing will also be emailed to you when the download completes.
Your document is on its way!
If you do not receive the document in five minutes, contact support at support@docketalarm.com.
Sealed Document
We are unable to display this document, it may be under a court ordered seal.
If you have proper credentials to access the file, you may proceed directly to the court's system using your government issued username and password.
Access Government Site
