Case 1:14-cv-01430-LPS Document 308-25 Filed 06/22/20 Page 1 of 15 PageID #: 21020
`
`Exhibit 25
`
`
`
`Exhibit 25
`
`
`
`Case 1:14-cv-01430-LPS Document 308-25 Filed 06/22/20 Page 2 of 15 PageID #: 21021
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 23 of 36 PageID #:
` 3292
`
`When the Chips are Down: Tiny Tech.
`Propelling Market Expansion
`Mueez Deen, Director of Marketing
`Mobile Memories
`Samsung Semiconductor Inc.
`
`
`
`Case 1:14-cv-01430-LPS Document 308-25 Filed 06/22/20 Page 3 of 15 PageID #: 21022
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 24 of 36 PageID #:
` 3293
`
`Handset Shipments Forecast, 2010
`• +13.5% YoY growth
`– Smartphone +56% YoY, 283Mu, +100M Units
`
`27%
`
`23%
`
`23%
`
`22%
`
`16%
`
`13.5%
`
`0.4%
`
`-2.0%
`
`6%
`
`-3%
`
`14%
`
`1,294
`
`1,158
`
`1,163
`
`1,140
`
`997
`
`817
`
`662
`
`520
`
`400
`
`423
`
`20
`
`54
`
`77
`
`119
`
`154
`
`182
`
`283
`
`Non-Smartphone
`(’10 YoY 6%)
`
`Smartphone
`(’10 YoY 56%)
`
`
`
`Case 1:14-cv-01430-LPS Document 308-25 Filed 06/22/20 Page 4 of 15 PageID #: 21023
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 25 of 36 PageID #:
` 3294
`
`Handset GB/Sys Growth
`• GB/sys growing at 3X faster than PCs
`– Smartphone memory up to 6.7GB/set (+90%)
`
`6.5GB
`
`298MB
`
`6.2GB
`
`3.6GB
`178MB
`
`3.4GB
`
`DRAM
`
`NAND
`
`173%
`
`111%
`
`188%
`
`119%
`
`75%
`
`1,631MB
`
`273%
`
`746
`
`426
`
`DRAM
`
`NAND
`
`0.02
`
`1.0
`
`3.8
`
`6.2
`
`26
`
`70
`
`148
`
`
`
`Thin is In: How to put your Mobile Gadget on a Diet
`
`Case 1:14-cv-01430-LPS Document 308-25 Filed 06/22/20 Page 5 of 15 PageID #: 21024
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 26 of 36 PageID #:
` 3295
`
`• Build Muscle: Pack more memory in
`the same space
`
`• Consume Less: With every new
`generation of memory, Samsung
`products are consuming less power
`
`• Run Fast: Memory speeds
`increasing to meet fast multimedia
`demands
`
`
`
`MCP: More Die & Higher Density per Pkg
`
`Case 1:14-cv-01430-LPS Document 308-25 Filed 06/22/20 Page 6 of 15 PageID #: 21025
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 27 of 36 PageID #:
` 3296
`
`Chip Stack
`Number
`
`20 EA
`
`15 EA
`
`10 EA
`
`11Gb
`
`10 Chip Stack
`
`3.2Gb
`
`8-
`Chip
`6/7-Chip
`
`4/5-Chip
`3-
`Chip
`1/2-
`Chip
`
`8 EA
`
`8 Chip Stack
`
`16GB
`
`120GB
`
`32Chip Stack
`
`Packaging
`Technology
`
`16 Chip Stack
`
`64GB
`
`moviNAND (eMMC)
`
`8GB
`16GB
`
`32GB
`
`MCP
`
`4GB
`
`5Chip
`
`4GB
`
`6 EA
`
`4 EA
`
`16GB
`
`moviMCP
`
`2004
`
`2005
`
`2006
`
`2007
`
`2008
`
`2009
`
`2010
`
`Year
`2011
`
`
`
`Case 1:14-cv-01430-LPS Document 308-25 Filed 06/22/20 Page 7 of 15 PageID #: 21026
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 28 of 36 PageID #:
` 3297
`
`Unique Packaging: PoP for Slim & Small
`
`Over 40% Space Gain + Higher Performance
`
`ND
`MCP
`
`Modem
`
`MCP Solution
`
`Modem
`(169mm2)
`
`ND MCP
`(136.5mm2)
`
`( CDMA Phone )
`
`Over 305mm2
`
`POP Solution
`
`POP Stack
`
`12 x 12 = 144mm2
`Or
`14 x 14 = 196mm2
`
`• PoP = Package-on-Package
`• Takes out one package footprint (area) and
`adds virtually no thickness
`• 40% space gain + >50% higher performance
`• Proven high volume manufacturing capability
`
`
`
`Case 1:14-cv-01430-LPS Document 308-25 Filed 06/22/20 Page 8 of 15 PageID #: 21027
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 29 of 36 PageID #:
` 3298
`
`Packing Transistors into Tinier Silicon
`
`DRAM
`
`2009
`
`Process
`
`56nm
`
`Density
`
`2Gb
`
`2012
`
`2Xnm
`
`8Gb
`
`NAND
`
`2009
`
`35nm
`
`32Gb
`
`Process
`
`Density
`
`2012
`
`1Xnm
`128Gb/
`256Gb
`
`• Density doubling every 1-2 years till 2012
`• Cost reduction of ~ 20% with every new generation
`• Economies of Scale through Process Migration continue
`
`
`
`Case 1:14-cv-01430-LPS Document 308-25 Filed 06/22/20 Page 9 of 15 PageID #: 21028
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 30 of 36 PageID #:
` 3299
`
`Power Consumption Challenge
`Battery Capacity Increase Rate is lagging MDRAM Standby Current Increase
`
`[ Average Phone Battery Capacity ]
`
`M-DRAM IDD6
`@45’C
`
`[ IDD6 vs. MDRAM Density ]
`
`CAGR : 3%
`
`8X
`
`4X
`
`2X
`1X
`
`2Gb
`
`512Mb
`
`1Gb
`
`768Mb
`
`4Gb
`
`2.5Gb
`
`CAGR:
`51.5%
`
`(Wh/L)
`510
`500
`490
`480
`470
`460
`450
`440
`430
`420
`410
`
`2008
`
`2009
`
`2010
`
`2011
`
`2012
`
`‘05
`
`‘06
`
`‘07
`
`‘08
`
`‘09
`
`‘10
`
`Year
`
`Operating Current
`Improvement for the
`same density in
`successive generations
`
`23%
`
`1X
`
`0.8X
`
`Current
`Next gen.
`(2Gb)
`
`
`
`Case 1:14-cv-01430-LPS Document 308-25 Filed 06/22/20 Page 10 of 15 PageID #: 21029
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 31 of 36 PageID #:
` 3300
`
`Comparison of LPDDR1 vs. LPDDR2
`LPDDR2 is better in all respects
`– Total Power:
`-12%
`– Power Efficiency:
`2X
`– Density:
`2X
`– Performance:
`2X
`
`Power (mW)
`
`200
`
`100
`
`137
`
`219mW
`
`Power efficiency [mW/GBps]
`
`236mW
`
`74
`
`192mW
`
`1.8V VDD
`
`60
`
`1.2V VDD
`
`1Gb (56nm)
`2Gb (46nm)
`1Gb (56nm)
`MDDR - DDR400
`LPDDR2 - DDR800
` Condition: IDD4R, MDDR1: 8pF, LPDDR2 : 8pF, Data toggle rate=50%,
`Core Power : Measurement, I/O Power: Calculated
`
`
`
`Case 1:14-cv-01430-LPS Document 308-25 Filed 06/22/20 Page 11 of 15 PageID #: 21030
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 32 of 36 PageID #:
` 3301
`
`Innovative Architectures for High Speed
`
`Goals
`
`Need to be 2 ~ 4 times faster
`Cut down power consumption by half
`
`Revolutionary
`Solutions
`Required !
`
`Technology
`
`Pros
`
`Cons
`
`Serial IO
`
`Wide IO
`
` High Bandwidth
` Simple Design
`
` Higher Bandwidth
` Low Power
`
` Less Power Efficient
`
` Cost Overhead
` Complex Biz Model
`
`Memory & Logic Collaboration Enables Improved Set Performance
`
`
`
`Case 1:14-cv-01430-LPS Document 308-25 Filed 06/22/20 Page 12 of 15 PageID #: 21031
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 33 of 36 PageID #:
` 3302
`
`Great Combinations: Wide I/O + TSV
`
`• Best of both worlds
`– Wide I/O: For performance
`– TSV (Through Silicon Via) for Thinnest multiple-die stack
`
`Wide I/O + TSV
`
`Size, Power & Speed
`
`35%
`
`50%
`
`x8
`
`Package
`Size
`
`Power
`Consumption
`
`Bandwidth
`
`POP
`TSV
`
`Wide IO (w/ TSV)
`Wide IO (w/ TSV)
`Wide IO (w/ TSV)
`Wide IO (w/ TSV)
`CPU (w/ TSV)
`
`PCB
`
`Total height
`
`
`
`Case 1:14-cv-01430-LPS Document 308-25 Filed 06/22/20 Page 13 of 15 PageID #: 21032
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 34 of 36 PageID #:
` 3303
`
`Mobile Applications Win!
`
`Samsung aligned with the Mobile Communications and
`Multimedia evolution
`
`
`
`Case 1:14-cv-01430-LPS Document 308-25 Filed 06/22/20 Page 14 of 15 PageID #: 21033
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 35 of 36 PageID #:
` 3304
`
`Memory Highlights
`• Samsung is dramatically increasing the memory density
`in the space of a single chip to enable THINnovation:
`– Packing higher density in a single die
`– Up to 16 stacked die in a chip
`– Stacked Package-on-Package
`• Power reduction through process shrinks and lower
`voltages
`• …While increasing performance!
`
`Watch for new Samsung products to redefine the THIN
`revolution!
`
`
`
`Case 1:14-cv-01430-LPS Document 308-25 Filed 06/22/20 Page 15 of 15 PageID #: 21034
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 36 of 36 PageID #:
` 3305
`
`Memory + Logic: Creating New Value
`
`Create New Value To Customers Through Close Partnership
`Between Logic Companies and Memory Companies
`
`MEMORY
`
`LOGIC
`
`Samsung has the expertise to combine advanced Memory and
`Logic into industry leading THINnovative solutions
`
`
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