Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 1 of 21 PageID #: 20999
`
`Exhibit 24
`
`
`
`Exhibit 24
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 2 of 21 PageID #: 21000
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 2 of 36 PageID #: 3271
`C§§§el111%93091960:PESCJBOCDB‘rfinhéfiBfij‘b-filfiflélfib'mflflldDaBQQle BMMJQHEPB 219991
`
`figuring}kafloryihnfinyflggy
`
`| _J
`
`{fijaMJonjfioamnqp
`
`IooamEmnmr-ivi'
`
`T. S. Jung, Ph.D
`Sr. Vice President
`
`Memory Division
`Samsung Electronics Co., Ltd.
`
`1
`
`gwim‘mméw
`
`Contents
`
`$©Uii<di Stains @rfiwca (($33)
`
`MAW imam
`
`M©E®fifl® Mammy
`
`2
`
`1
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 3 of 21 PageID #: 21001
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 3 of 36 PageID #: 3272
`
`Samsung Memory Market Share
`
`(cid:137) 2007 : Memory 27%, DRAM 27%, NAND 38%, MCP 34%
`(cid:137) 1H’08 : Memory 30%, DRAM 30%, NAND 42%, MCP 51%
`
`…..
`
`MEMORY
`MEMORY
`
`DRAMDRAM
`
`NANDNAND
`
`MCPMCP
`
`* Source : DQ (Mar 2008), iSuppli(Q3, 2008), SEC
`
`Drivers for Memory Bit Consumption
`
`(cid:137) Memory bit consumption has been increasing with
`new growth drivers (Mobile and NAND for PC/Server)
`
`Memory Bit Consumption [GB, Log scale]
`
`10 T
`
`100 B
`
`1 B
`
`10 M
`
`Desktop Note PC
`
`DSC MP3P
`
`0
`1990
`
`1995
`PC
`
`M : Million
`B : Billion
`T : Trillion
`
`MID
`Cellular Smart Phone
`2008
`2005
`2010
`
`SSD
`
`2000
`
`2015
`
`Digital Consumer
`Mobile Handset
`NAND in PC/Server
`
`(Source : WSTS, Dataquest)
`
`3
`
`4
`
`2
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 4 of 21 PageID #: 21002
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 4 of 36 PageID #: 3273
`
`5
`
`DDR3 to become Mainstream in 2009
`
`(cid:137) DDR3 adoption into Desktop(Q2 2007), Notebook(Q3 2008),
`Server(Q1 2009).
`2007
`2008
`2007
`2008
`
`2009 ~10
`2009 ~10
`
`Introduction
`Introduction
`
`Growth
`Growth
`
`Main Stream
`Main Stream
`
`(cid:137) DDR3 volume to surpass that of DDR2 by end of 2009,
`but DDR2 to remain significant in 2009.
`100%
`
`60%
`
`20%
`
`7%~11%
`@ 4Q,’08
`
`DDR2
`DDR2
`
`11%
`@ 4Q,’08
`DDR3
`(DQ)
`
`DDR3
`
`66%
`@ 4Q,’09
`
`46%~66%
`@ 4Q,’09
`
`1Q08
`
`3Q08
`
`1Q09
`
`3Q09
`
`1Q,'10
`
`3Q,'10
`
`Source: Dataquest (Q3 2008)
`
`6
`
`3
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 5 of 21 PageID #: 21003
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 5 of 36 PageID #: 3274
`
`Samsung DDR2 Competitiveness (’08~’09)
`
`(cid:137) Samsung to maintain leadership in cost reduction by aggressive
`technology transition : 68nm(’07) → 56nm(’08) → 4xnm(’09).
`- 1Gb DDR2 Relative chip size : 1.67X (68nm) → 1.0x (56nm)
`
`(cid:137) Samsung 68nm 1Gb was the most cost competitive in its class,
`and 56nm (Production Q2’08~) is even increasing the gap.
`
`DRAM Suppliers’ 1Gb DDR2 Relative Chip Size
`
`3
`
`2
`
`1
`
`1.73X
`
`1.78X
`
`1.67x
`
`2.14X
`
`1.0x
`
`56nm
`
`68nm
`
`Company
`Company
`B
`A
`6x nm 7x nm
`
`Company
`C
`7x nm
`
`SAMSUNG
`(56nm 1Gb DDR2)
`
`Not only DDR2 but DDR3 As Well ….
`
`(cid:137) Samsung 56nm DDR3 is in full production now.
`- 1Gb DDR3 Relative chip size : 1.60X (68nm) → 1.0x (56nm)
`
`(cid:137) Samsung 68nm 1Gb was most cost competitive in the class,
`and 56nm (Production Q4’08~) is even increasing the gap.
`
`(cid:137) Also, reduced DDR3/DDR2 cost overhead by 56nm technology
`will expedite DDR3 industry adaptation in 2009.
`
`DRAM Suppliers’ 1Gb DDR3 Relative Chip Size
`3
`
`SAMSUNG
`(56nm DDR3)
`
`2
`
`1
`
`1.0x
`
`1.79X
`
`1.77X
`
`1.60X
`
`2.12X
`
`56nm 68nm
`
`Company
`Company
`B
`A
`6x nm 7x nm
`
`Company
`C
`7x nm
`
`7
`
`8
`
`4
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 6 of 21 PageID #: 21004
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 6 of 36 PageID #: 3275
`
`Also, Leading High Density Solution : 2Gb DDR3
`
`(cid:137) Samsung introduced industry first 50nm class 2Gb DDR3.
`
`• Apr. ’08: Developed 50nm 2Gb DDR3
`• Apr. ’08: Developed 50nm 2Gb DDR3
`• Oct. ‘08: Mass production
`• Oct. ‘08: Mass production
`• Nov. ‘08: Completed Intel Platforms Certification
`• Nov. ‘08: Completed Intel Platforms Certification
`
`(cid:137) High density solutions for PC, Server using 2Gb DDR3 DRAM.
`
`• Thanks to small 2Gb DDR3 chip size, Samsung does not need high
`cost package/die stack solution up to 8GByte module.
`
`4GB SODIMM
`
`Notebook
`
`8GB RDIMM
`
`4GB UDIMM
`
`Desktop
`
`16GB RDIMM
`
`Server
`
`Server
`
`9
`
`Energy Savings & Green Movement
`
`(cid:137) Power becomes more critical factor for IT industry.
`• US Datacenters and Servers consumed ~61 billion kWh in ’06
`(cid:198) 1.5% of total US electricity consumption on ’06 ($4.5 billion)
`(cid:198) As much as US color TVs or 5.8 million households consumption
`(cid:137) Low power DRAM used to be just ‘nice to have’, but now it’s a
`critical requirement from major PC/Server OEMs.
`
`Annual Electricity Use (billion kWh/year)
`
`28.2
`
`61.4
`
`Site
`Infrastructure
`
`Network
`Equipment
`Storage
`High end Servers
`Midrange Servers
`Volume Servers
`
`‘00
`
`‘02
`
`‘04
`
`‘06
`
`50
`
`40
`
`30
`
`20
`
`10
`
`0
`
`Image source: Energy Star
`
`(Source : “Report to Congress on Server and Data Center
`Energy Efficiency Public Law 109-431,”
`U.S. Environmental Protection Agency (EPA), Aug.,2007)
`
`10
`
`5
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 7 of 21 PageID #: 21005
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 7 of 36 PageID #: 3276
`
`6
`
`11
`
`12
`
`Samsung DDR2/DDR3 Power Competitiveness
`
`(cid:137) Samsung’s leadership in DDR2 DRAM Power Consumption
`
`Idd2P
`
`[mA]
`
`0123456
`
`[mA]
`
`140
`
`120
`
`100
`
`80
`
`60
`
`40
`
`20
`
`0
`
`Idd4R
`
`[mA]
`
`50
`
`40
`
`30
`
`20
`
`10
`
`0
`
`Idd3N
`
`Samsung 56nm
`
`Company A (6xnm)
`
`Company B (7xnm)
`
`Company C (7xnm)
`
`(cid:137) And, DDR3 DRAM Power
`
`Idd2P0
`
`12[mA]
`
`10
`
`02468
`
`90[mA]
`
`80
`
`70
`60
`50
`
`40
`30
`20
`
`10
`0
`
`Idd3N
`
`[mA]
`
`200
`
`180
`160
`
`140
`120
`100
`
`80
`60
`
`40
`20
`0
`
`Idd4R
`
`Samsung 56nm
`
`Company A (6xnm)
`
`Company B (7xnm)
`
`Company C (7xnm)
`
`Industry is Pushing Even Lower Power
`
`(cid:137) Standard DDR3 is 1.5V and JEDEC is to finalize 1.35V DDR3
`SPEC by end of 2008 to meet lower power requirement.
`
`DDR 2.5V
`
`DDR2 1.8V
`
`DDR2 1.55V
`
`DDR3 1.5V
`
`DRAM Supply Voltage Migration
`
`DDR3 1.35V
`
`DDR4 1.2V
`
`2005
`
`2006
`
`2007
`
`2008
`
`2009
`
`2010
`
`2011
`
`2012
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 8 of 21 PageID #: 21006
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 8 of 36 PageID #: 3277
`
`Samsung’s 1.35V DDR3 Initiative
`
`(cid:137) Samsung 56nm 2Gb/1Gb DDR3 can support 1.35V with
`enough margin and samples delivered to major OEMs.
`
`(cid:137) 1.35V 2Gb can save extra ~20% power than 1.5V 2Gb.
`
`2Gb DDR3 (1.5V)
`
`2Gb DDR3 (1.35V)
`
`Blade System
`Memory Power
`Consumption
`
`70W
`
`-20%
`
`56.64W
`
`48GB ( 24GB x2 CPUs )
`
`48GB ( 24GB x2 CPUs )
`
`System
`Configuration
`
`CPUCPU
`
`8GB
`
`8GB
`
`8GB
`
`8GB
`
`CPUCPU
`
`8GB
`
`8GB
`
`DRAM Speed
`
`1333Mbps
`
`1333Mbps
`
`13
`
`14
`
`7
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 9 of 21 PageID #: 21007
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 9 of 36 PageID #: 3278
`
`SSD Means …
`
`Samsung SSD Leadership in PC
`
`(cid:137) Samsung introduced SSD for Note PC in 2006.
`
`(cid:137) In house SSD controller and software development capability
`keep improving performance and reliability of Samsung SSD.
`
`(cid:137) And, Samsung SSD is most widely adopted by major
`PC OEMs world-wide.
`2006
`
`2007
`
`2008
`
`32GB
`32GB
`SLC NAND SSD
`SLC NAND SSD
`
`64/128GB
`64/128GB
`SLC/MLC SSD
`SLC/MLC SSD
`
`256GB
`256GB
`MLC NAND SSD
`MLC NAND SSD
`
`Density
`
`Sequential
`Access
`Power
`(Active)
`
`~32GB
`~32GB
`R: 57MB/s
`R: 57MB/s
`W: 32MB/s
`W: 32MB/s
`0.5W0.5W
`
`~64/128GB
`~64/128GB
`R: 100MB/s
`R: 100MB/s
`W: 80MB/s
`W: 80MB/s
`0.59W0.59W
`
`~256GB
`
`R: 220MB/s
`W: 200MB/s
`
`1.1W
`
`15
`
`16
`
`8
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 10 of 21 PageID #: 21008
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 10 of 36 PageID #:
` 3279
`
`SSD Performance Bench Marking in PC
`
`(cid:137) Samsung’s new 256GByte SSD provides best performance.
`
`HDD, SSD Performance B/M Testing (PCMARK 05)
`
`Company
`C
`
`Company
`A
`
`Company
`B
`
`HDD
`
`(Score)
`
`25000
`
`20000
`
`15000
`
`10000
`
`5000
`
`0
`
`5400rpm 7200rpm
`
`(’08. Q2)
`
`(’08. Q2) (’08. Q2)
`
`(’08. Q3)
`
`(’08. 11)
`
`HDD
`
`SSD
`
`( Source : Samsung Internal Evaluation )
`
`[ PCmark05 performance can vary depending on HDD suppliers and PC system configuration]
`
`17
`
`SSD Value in Note-PC : Performance ?
`
`(cid:137) When the performance gap is relatively small (1.2X~2X),
`it’s difficult to see the difference from the user perspective.
`(cid:137) But, with Samsung’s new 256GByte SSD with almost 4X
`performance enhancement, easier to demonstrate and to feel.
`• Downloading HD movies 10ea (100GB),
`256GB MLC SSD : ~ 8 min, 72K RPM HDD : ~ 28min
`• Outlook 6.7GB mail copy
`256GB MLC SSD : 10.2 sec, 72K RPM HDD : 43.7sec
`
`3~4X
`3~4X
`
`~1.2X
`~1.2X
`
`~2X~2X
`
`5.4K 7.2K 10K 64GB
`HDD
`SSD
`2007
`2007
`
`10K
`128GB
`HDD
`SSD
`2008
`2008
`
`256GB
`10K
`SSD
`HDD
`2009
`2009
`
`[ PCmark05 performance can vary depending on HDD suppliers and PC system configuration]
`
`18
`
`9
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 11 of 21 PageID #: 21009
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 11 of 36 PageID #:
` 3280
`
`SSD Value in Enterprise : $/IOPS, IOPS/W
`
`Green
`
`“Short Stroking”
`
`Capacity
`$ / IOPS
`IOPS / W
`
`15K HDD
`3.5”
`146GB
`$0.43
`43
`
`4X
`112X
`
`15K HDD 2.5”
`
`SSD 2.5”
`
`76GB
`$0.82
`70
`
`7X
`70X
`
`64GB
`$0.11
`4800
`
`*SSD: IOPS: random read @ 512B, Data
`(Samsung)
`
`*HDD: Price and Data from
`storagereview.com; IOPS: average read speed
`
`19
`
`Core Competencies for SSD
`
`(cid:137) Host interface (SATA, SAS) is standard and stability is important.
`
`(cid:137) Overall SSD performance and reliability depend more on NAND
`Management, but there are wide variations in NAND.
`
`• Technology(40nm, 30nm) changes NAND architecture (Block Size, ECC..).
`• NAND Manufacturers provide different NAND architectures.
`• NAND interface is diversifying from SDR(Single Data Rate) to DDR
`• NAND cell technology keeps evolving (SLC, 2bit MLC, 3bit MLC ..)
`
`SSD Controller Block Diagram
`SSD Controller Block Diagram
`
`Host
`Interface
`
`CPU Core
`
`Buffer
`Manager
`
`NAND
`Management
`
`PC
`
`Host interface
`• PATA
`• SATA
`• SAS
`Standard
`Standard
`
`NAND
`NAND Control
`• NAND Shrink
`• NAND Suppliers
`• SDR, DDR Interface
`• SLC, 2bit, 3bit
`NAND Complexity
`NAND Complexity
`
`20
`
`10
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 12 of 21 PageID #: 21010
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 12 of 36 PageID #:
` 3281
`
`Top 5 Reasons: Why Samsung SSD ?
`
`1. Understanding NAND is the key for SSD and Samsung has been
`leading NAND technology with #1 M/S since ’03.
`
`2. Samsung is a leading SSD supplier for PC/Server OEMs and
`being most widely adapted by major OEMs now.
`
`3. Samsung has a long experience and relationships with major
`PC/Server OEMs through DRAM business.
`
`4. Samsung has In-house controller and software capability
`through SLSI business.
`
`5. Samsung has good storage industry understanding
`through HDD business.
`
`21
`
`22
`
`11
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 13 of 21 PageID #: 21011
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 13 of 36 PageID #:
` 3282
`
`Samsung NAND Technology Roadmap
`
`(cid:137) Samsung will transitioning from 42nm to 3xnm
`production from 1H ’09.
`
`(cid:137) 42/3Xnm 3bit MLC products introduction in ’09.
`
`(cid:137) Keep producing SLC NAND for high performance and
`high reliability applications such as SSD for server.
`
`NAND
`Density
`
`2 bit MLC
`50nm
`
`50nm
`
`SLC
`
`42nm
`
`3xnm
`
`3xnm
`
`42nm
`
`‘07
`
`‘08
`
`‘09
`
`’10
`
`23
`
`Samsung 30nm 64Gb NAND development
`
`(cid:137) Industry first 64Gb multi level cell (MLC)
`NAND flash using 30nm-class process
`technology developed (‘07.10).
`
`(cid:137) 32Gb 3xnm will be on production from 1H
`of 2009
`
`24
`24
`
`12
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 14 of 21 PageID #: 21012
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 14 of 36 PageID #:
` 3283
`
`NAND Transcending CE Arena…
`
`(cid:137) As NAND expands usage in Mobile(Embedded) and
`PC/Server(SSD) with much higher performance
`& reliability requirements, more values are being added.
`
`NAND GB
`Distribution
`
`PC/Server
`
`Mobile
`(Embedded)
`
`DSC, Card
`UFD
`
`Value Add Increasing
`
`Samsung Value Added NAND Products Increasing
`
`(cid:137) In ‘04, value added NAND portion was ~10% of Samsung
`NAND business.
`
`(cid:137) In ’08, the portion will increase to 41% due to expanding
`Mobile embedded and SSD applications.
`
`Samsung NAND sales in ‘08
`
`Value Added
`NAND : 41%
`
`Commodity
`NAND : 59%
`
`25
`
`26
`
`13
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 15 of 21 PageID #: 21013
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 15 of 36 PageID #:
` 3284
`
`27
`
`Mobile Handset Technology Trends
`
`(cid:137) As 3G and Smart Phone portion increases, high density
`and high performance memory requirement is getting higher.
`
`Slim Phone
`
`3D Game Phone
`
`DMB Phone
`
`HSPA Phone
`
`Web Browse Phone
`
`Ubiquitous
`Mobile Handset
`(3D + DMB +
`1080p…)
`
`2004
`
`2005
`
`2006
`
`2008
`
`2009~
`
`1,600
`
`1,200
`
`800
`
`400
`
`0
`
`24% 32% 37%
`
`3G
`
`59
`
`53
`
`48
`
`2.5G
`2G
`
`17
`'09
`
`15
`'10
`
`15
`'11
`
`2G
`
`'12
`
`'07
`
`'08
`
`(Source : IDC, June,’08)
`
`2,000
`
`1,600
`
`1,200
`
`800
`
`400
`
`0
`
`15% 17% 19%
`Smart Phone
`
`Feature Phone
`
`23
`
`20
`
`18
`
`'07
`
`'08
`
`'09
`
`'10
`
`'11
`
`'12
`
`(Source : iSuppli, Q3,’08)
`
`28
`
`14
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 16 of 21 PageID #: 21014
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 16 of 36 PageID #:
` 3285
`
`Mobile Memory is One of Key Samsung Memory Portfolio
`
`(cid:137) Mobile Memory occupies ~25% of Samsung memory business.
`
`World-wide Memory Transition Trend ($)
`
`(Source : Samsung)
`
`Samsung Mobile Memory (MCP) Market Share
`
`(cid:137) 2007
`(cid:137) 1H’08
`
`: MCP 48% (MCP: Multi Chip Package)
`: MCP 51%
`
`…..
`
`MEMORY
`MEMORY
`
`DRAMDRAM
`
`NANDNAND
`
`MCPMCP
`
`* Source : DQ (Mar 2008), iSuppli(Q3, 2008), SEC
`
`29
`
`30
`
`15
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 17 of 21 PageID #: 21015
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 17 of 36 PageID #:
` 3286
`
`High Packing Density is the Key for Mobile
`
`# of Memory Chips Stacking
`
`20um
`Chip TSV
`
`30um Chip
`W/ Bonding
`
`32
`
`16
`
`8
`
`4
`
`2
`
`Chip Stack (Development)
`
`50um Chip
`W/Bonding
`
`32Chip Stack
`
`80um Chip
`W/ Bonding
`
`16 Chip Stack
`
`80um Chip
`W/Bonding
`
`10 Chip Stack
`
`8-
`Chi
`6/7-
`p
`Chip
`4/5-
`3-
`Chip
`Chi
`1/2-
`p
`Chip
`
`8 Chip Stack
`
`9 Chip Stack
`9 Chip Stack
`
`80um Chip
`W/Bonding
`4 Chip Stack
`
`3 Chip Stack
`3 Chip Stack
`
`6 Chip Stack
`
`4 Chip Stack
`4 Chip Stack
`
`5 Chip Stack
`5 Chip Stack
`
`Chip Stack (Production)
`Chip Stack (Production)
`
`2002
`
`2003
`
`2004
`
`2005
`
`2006
`
`2007
`
`31
`
`Samsung 3D Packaging Technology
`
`(cid:137) Samsung Multi-Chip TSV (Through Silicon Via) Technology
`• Chip Thickness : 20 um, 32 chips stacking (Dec. 2007)
`
`(Source : Samsung)
`
`32
`
`16
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 18 of 21 PageID #: 21016
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 18 of 36 PageID #:
` 3287
`
`SAMSUNG introduced OneNAND in 2003
`
`(cid:137) NAND Flash + SRAM + Logic (NOR I/F) in One Chip
`
`(cid:137) High Density (as NAND) + High Speed (as NOR)
`
`OneNAND
`OneNAND
`
`NAND Flash Cell
`Low Cost +
`
`SRAM
`High speed +
`
`HW ECC
`High Reliability
`
`33
`
`And, OneNANDTM is Expanding
`
`(cid:137) OneNAND has been adopted in major High-end & Smart phones
`
`(cid:137) Samsung licensed OneNAND to Numonyx and Toshiba
`
`MassMass
`
`Production in Production in ‘‘0909
`
`(Source : Company Website)
`
`34
`
`17
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 19 of 21 PageID #: 21017
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 19 of 36 PageID #:
` 3288
`
`eMMC for High Capacity Embedded for Mobile
`
`(cid:137) eMMC = MMC controller + High Density MLC NAND.
`
`=
`
`+
`
`(cid:137) Samsung introduced eMMC to JEDEC based on MMC standard.
`
``06 Feb.
`
``06 Aug.
`
``07 Dec.
`
``08 Sep.
`
``09 1Q
`
`Samsung
`proposed
`MMC into
`JEDEC(JC64)
`
`MMC4.2
`Publication
`
`MMC4.3
`Publication
`
`MMC4.4
`Draft
`
`MMC4.4
`Release
`
`35
`
`Design-wins for Samsung eMMC (moviNANDTM)
`
`(cid:137) Samsung eMMC (moviNANDTM ) has been adopted for >81
`mobile & consumer platforms in ’08.
`
`Others (MP3, Game, etc)
`
`DSC/DVC
`
`PND
`
`Mobile Phone
`
`>81 platforms
`
`>127 platforms
`
`Number of
`Platforms to
`adopt Samsung
`moviNAND
`
`94
`
`6
`
`21
`
`51
`
`>40 companies
`
`72
`
`5
`
`16
`
`33
`
`33 platforms
`
`>30 companies
`
`9 55
`
`14
`
``07
`
`16 companies
`
``08 (E)
`
``09 (E)
`
`[Source : Samsung]
`
`36
`
`18
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 20 of 21 PageID #: 21018
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 20 of 36 PageID #:
` 3289
`
`Samsung Memory Value Proposition
`
`Samsung’s Leadership in Memory
`Samsung’s Leadership in Memory
`
`High
`High
`Density
`Density
`
`High
`High
`Performance
`Performance
`
`Fusion
`Fusion
`(HW, SW)
`(HW, SW)
`
`Low
`Low
`Power
`Power
`
`Controller
`Controller
`+ Software
`+ Software
`
`Strong
`Strong
`R&D Capability
`R&D Capability
`
`Product
`Product
`Portfolio
`Portfolio
`& Solutions
`& Solutions
`
`Production
`Production
`Capacity
`Capacity
`
`
`Timely Timely
`
`InvestmentInvestment
`
`37
`
`38
`
`19
`
`
`
`Case 1:14-cv-01430-LPS Document 308-24 Filed 06/22/20 Page 21 of 21 PageID #: 21019
`Case 1:14-cv-01430-LPS-CJB Document 109-3 Filed 04/20/16 Page 21 of 36 PageID #:
` 3290
`
`39
`
`20
`
`
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