Case 1:14-cv-01430-LPS Document 308-20 Filed 06/22/20 Page 1 of 3 PageID #: 20962
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`Exhibit 20
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`Case 1:14-cv-01430-LPS Document 308-20 Filed 06/22/20 Page 2 of 3 PageID #: 20963
`Case 1:14-cv-01430-LPS-CJB Document 109-2 Filed 04/20/16 Page 218 of 240 PageID #:
`Samsung Semiconductors Global Site
`11/20/2014
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`Samsung Starts Mass Producing Industry’s First 3D TSV Technology
`Based DDR4 Modules for Enterprise Servers
`Seoul, Korea on Aug. 28. 2014
`
`Samsung Electronics, Ltd. announced today that it has started mass producing the industry’s first 64 gigabyte (GB), double data
`rate-4 (DDR4), registered dual Inline memory modules (RDIMMs) that use three dimensional (3D) “through silicon via” (TSV)
`package technology. The new high-density, high-performance module will play a key role in supporting the continued proliferation
`of enterprise servers and cloud-based applications, as well as further diversification of data center solutions.
`
`The new RDIMMs include 36 DDR4 DRAM chips, each of which consists of four 4-gigabit (Gb) DDR4 DRAM dies. The low-power
`chips are manufactured using Samsung’s most advanced 20-nanometer (nm) class* process technology and 3D TSV package
`technology.
`
`“Samsung is reinforcing its competitive edge in the DRAM market with its new state-of-the-art solution using its 3D TSV technology,
`while driving growth in the global DRAM market,” said Jeeho Baek, vice president, memory marketing, Samsung Electronics. “By
`introducing highly energy-efficient DDR4 modules assembled with 3D TSV, we’re taking a big step ahead of the mainstream DDR4
`market, which should dramatically expand with the expected introduction of next-generation CPUs in the second half of this year.”
`
`Samsung’s volume production of 3D TSV modules marks a new milestone in the history of memory technology, following the
`company’s initial production of 3D Vertical NAND (V-NAND) flash memory last year. While 3D V-NAND technology embraces high-
`rise vertical structures of cell arrays inside a monolithic die, 3D TSV is an innovative packaging technology that vertically
`interconnects stacked dies. With its introduction of the new TSV modules, Samsung has further strengthened its technological
`leadership in the “3D memory” era.
`
`To build a 3D TSV DRAM package, the DDR4 dies are ground down as thin as a few dozen micrometers, then pierced to contain
`hundreds of fine holes. They are vertically connected through electrodes that are passed through the holes. As a result, the new
`64GB TSV module performs twice as fast as a 64GB module that uses wire bonding packaging, while consuming approximately
`half the power.
`
`In the future, Samsung believes that it will be able to stack more than four DDR4 dies using its 3D TSV technology, to create even
`higher density DRAM modules. This will accelerate expansion of the premium memory market, in line with an acceleration of the
`transition from DDR3 to DDR4 throughout the server market.
`
`Samsung has worked on improving 3D TSV technology since it developed 40nm-class* 8GB DRAM RDIMMs in 2010 and 30nm-
`class* 32GB DRAM RDIMMs in 2011 using 3D TSV. This year, Samsung started operating a new manufacturing system dedicated
`to TSV packaging, for mass producing the new server modules.
`
`http://www.samsung.com/global/business/semiconductor/news-events/press-releases/detail?newsId=13602
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`Case 1:14-cv-01430-LPS Document 308-20 Filed 06/22/20 Page 3 of 3 PageID #: 20964
`Case 1:14-cv-01430-LPS-CJB Document 109-2 Filed 04/20/16 Page 219 of 240 PageID #:
`Samsung Semiconductors Global Site
`11/20/2014
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