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`= ENERGY™
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`POWER SYSTEMS
`By R.A. Scholl, Advanced Energy Industries, Inc.
`ELL LLL ELLE ELE ELLE IES SSN FOR REACTIVE
`There are several approaches available for deposition of insulating films, and a
`SEUTIERING OF —
`numberof means for arc control in such processes. In addition to the classical direct
`INSU.LATING FILMS
`sputtering of insulating targets by the use of radio-frequency power, reactive sputtering —— —
`using direct-current power has been frequently used because of its higher rate of deposition,
`andseveral processes and equipment configurations have been devised for this purpose.
`These include simple dc sputtering from a single target; single-target sputtering using dc plus
`an alternating voltage component, either pulsed or sinusoidal; dual-cathode sputtering using
`sinusoidal power; and new techniques using pulsed power and dual cathodes. This paper will
`describe the methods used or proposed for dc reactive sputtering and the equipment, physical
`principles, and operating features of each.
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`DC SPUTTERING — CONTROLLING ARC ENERGY
`
`Except for a few high-power industrial processes,
`switchmode de power supplies have come to dominate the
`plasma sputtering power market. This has occurred because of
`the intrinsic positive features of this topology as compared to the
`formerly-used thyristor types. These features result from the basic
`nature of the switchmode topology, shown in Figure 1 on page 6.
`
`The Switchmode Supply
`The supply outlined in Figure 1 is a single-phase pulse-
`width-modulated (PWM) design; most commercial units on the
`market today utilize this approach. In this design, the mains
`voltage is rectified to produce an uncontrolled de voltage by the
`ac-de converter (C), which is delivered to the switch element
`(S). The switch elementis the heart of the power supply; it
`produces a controlled alternating voltage fromits uncontrolled
`dc input and applies this voltage to the primary of transformer
`(T). The transformeris used not only to provide isolation from
`the mains, but also to move the output voltage and currentto
`the levels required by the load. The outputof the transformer is
`applied to a rectifier (R), which produces a dc output with ripple
`at the switching frequency. This ripple is reduced by L-Cfilter
`(F). The other elements shown in Figure 1 will be described
`later.
`
`Advantages of the Approach
`The three principal advantages of the switchmode topology
`all derive from the high frequency of the alternating voltage
`created by the switch element (S). First, the transformer (T) can
`be made smaller and lighter for a given power by the ratio of
`the mains frequencyto the switching frequency. For a switching
`frequency of 50 kHz, this ratio is 1000:1. In actual practice the
`transformer cannot be shrunk by quite this much because of
`the insulation and because available magnetic materials at the
`higher frequencies saturate sooner thanthesteel alloys used
`in mains transformers. Nevertheless, it is possible to make a
`
`
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`
`
`
`
`
`transformer capable ofhandling \
`
`10,000 watts that one can easily
`hold in one’s hand. Second, the
`energystored in the outputfilter
`(F) can be reduced, also by the
`
`ratio of the frequencies. This not
`
`\
`
`only reducesthe size and weight of
`the elementsofthe filter but also
`reduces the energy delivered to a “hard
`arc” should one occur during processing.
`The third advantage is speed of response.
`The switch element (S) not onlycreates
`an alternating waveformbutalso controls
`the amount of powerthat reaches the
`output. Sinceit is operating at a high
`frequency, it can be controlled at a high
`frequency, making switchmode power supplies
`much more agile than their thyristor
`counterparts. In most designs output poweris
`determined by the percentage of time the switch
`element (S) is turned on outof each cycle.
`Also, unlike thyristors, the switches usually used in
`switchmode power supplies can be turned off in the
`middle of a cycle, generally within a fraction of a
`microsecond. This fact, coupled with the lowstored
`energy in the outputfilter (F), greatly reduces damage
`to the system or to growing film under arcing conditions.
`
`Arc Control
`Should a short appear across the output of the power
`supply, the entire output voltage will appear across (L) and
`the inductorin filter (F). This causes the current in these
`elements to ramp uplinearly with time. A current transformer
`(CT) senses this currentrise on the primary side of (T) and,
`before the current reaches a level that would be dangerous for
`the switches, turns them off, stopping the current. This sequence
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`POWER SYSTEMS FOR REACTIVE SPUTTERING OF INSULATING FILMS
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`of events also occurs for arcs, which act like short circuits on the
`output of the supply (to speed up arc detection and thus reduce
`the energy delivered to the arc, the current sense circuitry is
`often additionally programmed to detect a significant change
`from the nominal current). The so-called “hard arcs,” arcs
`occurring between the sputtering target and earthed points
`in the system, can be sustained by thermionic emission of
`small spots within the system, and to ensure the arc docs not
`reinitiate, the power supply mustbe left off long enough forthe
`emission to reduce belowa critical threshold. Much less than
`0.1%ofall arcs are of this type, however, and if every arc was
`controlled in this way, process throughput would be reduced
`because the power supply would be off for a significant fraction
`of the time.
`
`To address this issue, an arc control inductor (L) is added
`in series with the output. When an arc occurs, this inductoris
`effectively placed in parallel with the capacitor in filter (F), with
`which it forms a resonant circuit. Provided the element values
`are properly chosen, during an arc, the current in this inductor
`will ring in a sinusoid and after one-half cycle will attempt to
`reverse. Most arcs are unipolar; that is, they have a definite
`cathode and cannotbe sustained under conditionsofreversing
`current. These arcs are extinguished by the reversing current
`long before the primary current of transformer (T) reaches the
`critical value sensed by the current transformer (CT) to turn
`off the switches. This simple circuit thereby extinguishes almost
`every arc in a few microseconds, long before the current can rise
`in the transformer primary.It is important to note that forthis
`reason, a countof the numberof turn-off cycles reported by the
`powersupply logic circuits will not inclucle these automatically-
`extinguished arcs. Many powersupplies therefore include special
`arc-detect citcuits for arc-counting purposes.
`
`Energy Delivered to Arcs by the Supply
`The energy delivered by the power supply to such auto-
`matically-extinguishedarcs is small, generally less than 20
`millijoules. To ensure that unipolar arcs are extinguished by
`the arc control inductor, however, the element values must be
`chosen such that the current will indeed reverse. This requires
`that the peak current delivered from the power supply during
`the ringing process be manytimes the sputtering current. Some
`processes are sensitive to peak current as well as energy delivered
`and in these cases a modification of the power supply can be
`made to improve yields at the expense of throughput.
`
`of the switch clement (S) and energy will flow from the mains
`to the arc through the powersupply circuitry. This is called
`“let-through” energy. For a typical design, the total energy
`delivered to a “hard arc” will be between 100 and 800 millijoules
`at an output power of 10 kW, and correspondinglyless at lower
`powers.
`
`For processes sensitive to hard-are energy, this valuc can
`be lowered by increasing the sensitivity of the logic circuits to
`detection of an arc, thereby shortening the delay in detection
`of an arc and reducing “let-through” energy. Alternatively, the
`values of the elements of outputfilter (F) can be reduced,
`increasing ripple but lowering the energy stored there; as many
`processes are not particularlysensitive to ripple and may actually
`be helped by the presence of high frequency alternating voltage,
`this can sometimes be a good strategy. Active devices can be
`placed at the output of a powersupply to openthecircuit
`connection to an arc when oneis detected or to shunt the
`energy away from an arc. These devices can reduce the energy
`delivered to an arc to the low millijoule level, but of course also
`increase complexity and cost. To address this, alternative design
`approaches to that represented by Figure 1 are being developed
`that store only a few millijoules at 10 kW. However, these are
`just emerging at the time ofwriting.
`
`Problems in reactive sputtering
`Reactive sputtering of insulators using de power alone can
`presentdifficulties with arc control. As reactions occur at the
`target surface, insulating layers are formed there that charge up
`due to ion bombardment. The resulting electric fields inside the
`layers can easily exceed the dielectric strength of the material
`and breakdown can then occur"!, This breakdown generally
`causes an arc to which the power supply must respond.
`
`To achieve stoichiometric films, the gas flow must be near
`a critical value that can result in poisoning of the target surface;
`only the presence of the sputtering poweris then keeping the
`sputtering region of the target metallic. If the power supply turns
`off for an arc, this metal region of the target will quickly poison
`and the process will go out of control due to the hysteretic
`nature of reactive sputtering @!. A number of approaches have
`been developed in an attempt to overcome this problem, most
`based upon gas separation ©“), but with limited success. For this
`reasonit is difficult to use dc power alone to sputter insulators
`such as metal oxides, and another approach must be sought.
`
`The energydelivered to a “hard arc” is determined by
`several factors. First, the energy stored in the outputfilter (F)
`must be dissipated bythe arc, as there is no otherpathforit.
`Second, there may be energystored on the primary side of the
`transformer(T) that finds its way to the arc. Third, any delay in
`recognition of the arc bythe logiccircuits will delay the opening
`
`QUASI-DC SPUTTERING: PREVENTING ARCING
`The above-mentioned difficulties have been classically
`avoided by the use of radio-frequency poweron the target
`surface. Electrons are attracted to the target surface on the
`positive peak of every RF cycle and these discharge any
`insulating regions formed there, preventing buildup of charge to
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`POWER SYSTEMS FOR REACTIVE SPUTTERING OF INSULATING FILMS
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`the destructive level. Radio-frequency power is very expensive
`to produce, however, and is difficult to deliver uniformly to large
`target areas. The required matching networks are expensive and
`absorb power. In addition, substrate heating can be a problem.
`For these reasons, this approach has not found use outside of a
`fewspecialized applications and in laboratory experiments.
`
`Pulsed DC approaches
`For the thin insulating layers formed on the target during
`reactive sputtering, however, there is no need to resort to
`radio-frequency power. Depending uponthe dielectric constant
`of the reaction product and the current density of the arriving
`ions, the layers can be kept discharged with relatively low
`frequencies. If the layers are kept discharged, arcing can be
`prevented altogether. For ALO,, a discharge rate of only 20 kHz
`is sufficient to preventdielectric breakdown for current densities
`of up to 103 A/m’, and it can be shown that the rate required to
`prevent breakdown is not dependent uponthe film thickness ©.
`This fact has been taken advantage of in the use of a numberof
`approachesto reactive sputtering.
`
`Some workers have used “choppers” or “modulators” to
`remove the de fromthe target periodically ©". The circuitry
`used effectively short-circuits the power supply periodically; this
`causes the built-up charge to raise the surface potential of
`insulating regions of the target to positive values, and electrons
`attracted from the plasma discharge the surface. As the surface
`is discharged, the potential attracting the electrons decreases,
`and complete discharge of the surface is not achieved. Some
`“unipolar pulsed dc” supplies based upona slightly different
`principle are available commercially; these contain a series
`switch that periodically disconnects the supply from the plasma.
`These are not so useful for reactive sputtering because discharge
`of the target is obtained only through the mechanismof
`self-discharge of the layers, which is too slow to be of practical
`use in this arc-prevention context ©.
`
`Considerable success has been achieved by an approach
`that forcibly reverses the target voltage to a few tens of volts
`higher than the plasma potential ©°!, This device, Advanced
`Energy’s Sparc-le® unit, for which patents are pending, has a
`basic schematic diagram as shown in Figure 2 on page 6.
`
`When the switch element (S) is open, the Sparc-le® unit acts
`as a simple series inductance. The energy stored in the magnetic
`field of the inductor acts to steady the current into the plasma.
`Periodically (the rate can be varied from 2 to 50 kHz) a signal is
`sent to the switch to close. Whenthe switch is closed, the circuit
`is changed to that shownin Figure 3 on page 6. The tapped
`inductor becomes a transformer with a ratio adjustable from 20:1
`to 4:1 (some models are not adjustable; these are preset at 8:1).
`Note that the transformerpolarity is such that the voltageis
`
`reversed at the output, so the output whenthe switch is pulsed
`is positive and varies from 5%to 25% of the nominalsputtering
`voltage. The pulse width of some modelsis fixed at 5 or 10 m;
`in others the pulse width can be adjustable from 1 to 20 m. The
`voltage waveform for a fixed unit is shown in Figure 4 on page 7.
`
`Meanwhile, an arc detect circuit, (D), sends a signal to
`close the switch when anarc is sensed. This has the effect
`of removing the electrons from the arc and quenchingit. The
`voltage waveformfor this case is shown in Figure 5 onpage 7.
`Should a hard arc occur that is not quenched by the voltage
`reversal, some models will leave the switch closed to shunt
`the system’s stored energy away from the plasma. Provision can
`be made to trigger the arc-detect circuit remotely so that in
`systems with multiple Sparc-le® units, all will act together. This
`is important because otherwise the triggered unit will act as an
`anodefor the other, still-operating, cathodes, and the resulting
`current can be quite high in some circumstances.
`
`Workers have been quite successful using these devices
`to create stoichiometric films of ALO,, TiO,, Ta,O,, and the
`oxides, nitrides, and carbides of these and Hf, Nb, Cr, Mo,Zr,
`and Vanadium [!14),
`
`“Bipolar pulsed dc”supplies are also available that contain
`reversal-switching for a dc supply. These units apply thefull
`output voltage of the de portion of the power supply tothe
`plasma,in either a positive or negative polarity. The positive
`and negative pulse widths are adjustable over a considerable
`range (from a few ms up to % s) andvariable off-timesare
`available between the pulses. Provided the positive pulse is kept
`short enough to avoid transport of the ions in the plasma to the
`chamber walls, such a unit can be used for quasi-de sputtering.
`Disadvantages of currently available commercial units include
`availability of voltage regulation only, large physical size, and
`high cost.
`
`Mixed-Mode Approaches
`Low- or medium-frequency ac can be added to de
`power to achieve arc-free performance in reactive-sputtering
`applications). In this approach, a “combiner” unit permits
`
`connection of an ac generator in the frequency range of 40
`
`
`to 400 kHz and a de powersupply to the same target. The
`combinerpresents a dc block to the ac generator and an
`ac block to the de power supply using series- and parallel-
`resonant circuits, respectively. Carbon films sputtered using this
`approach have been shownto have more consistentfriction
`characteristics than carbonfilms sputtered using de alone. The
`carbontargets also showed slower growth of the hard regions
`called “nodules” when mixed-mode power was applied. Silicon
`dioxide has been reactively sputtered using this approach and
`compared with films made by de alone. Optically clear coatings
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`were cxamined using a Nomarski microscope; total integrated
`scattering at 633 nm was 220 x 104 (2.2%) for the de-sputtered
`films, but only 3.0 x 10+ (0.03%) for mixed-modefilms,
`indicating the much lower numberof inclusions and defects in
`the latter.
`
`Mixed-mode sputtering also showed promise in the reactive
`O, sputtering of alloys in which the metallic constituents oxidize
`atdifferent rates, and in sputtering Indium-Tin Oxide fromthe
`ceramic target. Investigations of ITO films produced from a
`metallic target showed noloss offilm quality using mixed-mode
`sputtering. Generally, however, while the mixed-mode approach
`maybe advantageous in some processes, it has not been
`investigated thoroughly because of the ease and lowercost of
`alternate approaches.
`
`Arc Control
`Are control is more difficult in ac systems and particularly
`difficult in mixed-mode. Arc detection in ac power supplies
`varies from rudimentarycircuits that merely detect the average
`voltage to sophisticated circuitry that compares the current on
`each cycle with the average of the past few cycles; the latter
`can, of course, act much more quickly. The fastest circuits
`can shut downthe supply within a single ac cycle, greatly
`limiting the energy delivered into an arc. Mixed-mode systems
`are moredifficult because shut-downof the two supplies must
`be synchronized.
`
`THE DISAPPEARING ANODE
`Anysingle-target system sputtering an insulatorsuffers
`from what can be a serious problem: the current return path to
`the power supply can disappear. In conventional de magnetron
`sputtering, an electron trap is formed over the cathode surface
`and an intense plasma is formed there from whichionsare
`drawn to sputter the target surface. Withdrawal of ions from
`the plasma changes the potential there and causes electrons
`to “leak” from the plasma; these electrons are attracted to the
`anode of the system (the element to which the positive lead of
`the powersupplyis attached—oftenthis is simply the chamber
`walls) and form the return-current to the power supply.
`
`When the growing filmis an insulator, every surface of the
`chamber will eventually be coated byinsulating compounds and
`there will be no path for the electrons to return to the power
`supply. The effect from the powersupply’s point ofviewis
`that the impedance of the load begins to rise; this causes the
`voltage to increase,and eventually the power supply will go out
`of regulation. Inside the chamber, the plasma becomes diffuse
`and eventually extinguishes. Even before this happens, the
`coating of the anodestructure can cause serious nonuniformity
`in the plasma andin the deposition rates in large-area coaters.
`
`4
`
`While this problem may be only a minor nuisance in a
`laboratory or small-scale environment, it can be a majorissue
`in systems scaled up to industrial production. A numberof
`approaches have been tried to eliminate or ameliorate this
`problem, including anodes placed out of sight of the discharge,
`rotating anodes, wire-fed anodes, and anodes using magnetic
`fields to bend the electrons into a re-entrant structure. In
`manycases, simple maintenance involving replacementof
`removable elements in the system have proved adequate, but for
`very large-scale production of highlyinsulating films, a clever
`method using two cathodes shows promise.
`
`LF AND DUAL-CATHODE SPUTTERING
`In the late 1970s, a group headed by Robert Cormia
`at Airco investigated low-frequencyac reactive magnetron
`sputtering and was granted a patent on the technique |!!, Their
`system used a single magnetron; an alternating voltage with
`frequencies from 60 Hz to some tensof kilohertz was applied
`to the target. Sputtering TiO, and using 10 kHz power, they
`reported no arcing under any conditions. This single-target
`systemsuffers, however, from a disadvantage related to the
`“disappearing anode" problem cutlined above. Once the
`chamberis covered with insulating material, there can be no
`average (dc) current flowing in the power supply leads. This
`means that a plasma must be formed on everyhalf-cycle of the
`ac waveform, even whenthetargetis positive. Since Cormia
`used a conventional anode in his experiments, the plasma had
`to be ignited in the diode mode (nonmagnetically-enhanced),
`which caused sputtering of the anode and contamination of
`the film. This lead to the suggestion that the counter-electrode
`be a magnetron target and the invention of the dual-cathode
`system.First described by G. Este at BNL "7, this concept
`was developed by several investigators simultaneously &!7. In
`this approach, an ac power supply is connected between two
`cathodes; each acts as an anode for the other during alternate
`half cycles of the ac waveform. The considerable advantage
`offered by the dual-cathode approach is the solution to the
`disappearing anode problem,since the anode on eachhalf-cycle
`is a freshly-sputtered surface and is therefore guaranteed to be
`clean.
`
`SINUSOIDAL SYSTEMS
`In the simplest approach, the ac power supply consists
`of a sinusoidal generator. Idealized waveforms appearing at
`the cathodes for this case are shown in Figure 6 on page
`7. Electrons arriving at elements being drivenpositive clamp
`the voltage there to the plasma potential, and thefull voltage
`therefore appears at the element being driven negative.It
`should be obvious that the targets must “see” each other (be in
`short line of sight) for the electrons to be able to arrive at the
`positive target and complete the electrical circuit. This prevents
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`placementof the two targcts on opposite sides of a substrate, for
`example. Sources have been designed that contain two targets
`in a single unit, such as the “dual-ring” source "8.
`
`In practice, the waveforms are far from ideal. The nonlinear
`nature of the plasmagreatly distorts the sinusoidal current and
`voltage and asymmetries are frequently seen in spite of the
`apparent symmetry of the system. In addition, high-frequency
`oscillations in high power systems (in the 100-kW-and-up
`region) are created by mechanisms not yet understood. These
`oscillations can contain substantial energy and will damage the
`power source unless it is properly designed.
`
`Arc control in sinusoidal systems has been outlined
`previously in the discussion of mixed-modesputtering.
`
`Bipolar Systems
`Bipolar pulse powersources have also been used to power
`dual-cathode systems "*!, These power sources, mentioned
`earlier, have electronic switches in an H-bridge topology so that
`the voltage from a de powersupply can be applied in either
`polarity to the targets. The positive and negative pulse widths
`are adjustable over a considerable range (from a few ms up to
`Y s) and variable off-times are available between the pulses.
`Frequency can be varied from a few hertz to 33 kHz in one
`commercially available unit °"!. There are several potential
`advantages to this approach. For example, with a sinusoidal
`source,it is difficult to change therelative power taken up
`by each source. With bipolar pulsed sources, the power can be
`changed simply by adjustment of the pulse widths. This permits
`cosputteringofalloys if the targets are of different materials,
`with more or less complete control over the alloy composition;
`time-dependent changes can produce graded alloys. The same
`feature can permit control of deposition uniformity over
`wide-area substrates and can permit equal erosion rates of
`dual-ring targets. On the negative side of the ledger, such
`pulse sources are difficult to scale up to large powers and are
`intrinsically more expensive than sinusoidal powersupplies.
`In practice, they have proved to beless reliable as well,
`possibly because of the difficulty of protecting the delicate
`semiconductor switches used to reverse, the voltage.
`
`Arc control in bipolar systems consists of sensing of the
`current during the pulses and comparing this to a reference
`value. Should the current exceed the reference, the switches are
`not triggered for a period of time.
`
`REACTIVE CATHODIC ARC SYSTEMS
`Cathodic arc systems are commonly used to produce hard
`and decorative coatings. Commonly preduced are films of the
`nitrides, carbides, and carbonitrides of titanium, zirconium,
`chromium, hafnium, molybdenum, niobium, vanadium, and
`
`compoundssuch as Ti,Al,.N, and TiZrN, cubic boron nitride
`(CBN), and carbonnitride. The last of these is predicted to be
`harder than diamondif it could be made in the form C,N» but
`so far, only CNx with 0.2<x<1.0 has been reported. Manyof
`these films are decorative as well as functional. The function
`of such coatings includes their use as barrier, tribological, and
`corrosion protectionlayers in addition to increasing surface
`hardness and wearresistance.
`
`All successful processes for such coatings involve
`ior-assisted deposition wherein ions are caused to bombard the
`growing film. This promotes adhesion, densifies the coating, and
`creates a residual compressive stress in the film, important tofilm
`strength. As the cathodic arc source produces a high-ion content
`in the vapor stream (up to 90%), it is usual to bias the substrate
`with de to attract the ions. Typical current densities of 5 ma/em?
`are used with bias voltages from 125 V to 2000 V. Commonly, a
`“clean cycle” is used wherein the substrate is bombarded by argon
`ions or pure metal ions to remove surface impurities.
`
`Asin sputter deposition, insulating layers on the substrate
`can cause arcing, which can cause both decorative and
`functional problems. A de supply with a Sparc-le® unit and
`unipolar pulsed supplies have both been used for substrate bias
`in these applications to prevent or greatly reduce arcing. The
`pulsed supply must not attempt to drive the substrate positive
`more than a few volts as otherwise the cathodic arc current
`could transfer to the substrate. Use of pulsed de as a substrate
`bias in such systems is covered by patents in both Europe and
`the US 24,
`
`REFERENCES
`1 WD. Westwood, Handbookof Plasma Processing Technology (1990)
`No
`
`D.K. Hohnke, Dj. Schmatz, and M.D. Hurley Thin Solid Films 118, 301, (1984)
`
`oNAMwRhW&
`
`G. Este and W.D. Westwood, J. Vac. Sci. Technol. A2 (3), 1238 (1984)
`
`M. Scherer and P. Wirz, Thin Solid Films 119, 203-209 (1984)
`
`R. Scholl, Proc. 37th SVC Tech. Conf. 312ff (1994)
`
`H. Signer, et al, PC Patent application No. 0 564 789 A1 (1993)
`
`EL. Williams, H.D. Nusbaum, and B.}. Pond, OSA Technical Digest V. 23 (1992)
`
`5. Schiller, K. Goedicke, |. Reschke, V. Kirchoff, 8. Schneider, and F. Milde,
`ICMCTF93
`
`g Advanced Energy Industries, inc., SPARC-LE® product snapshot.
`
`10 W.D Sproul, M. Graham, M, Weng, S. Lopez, D. Li, and R. Scholl, AVS Tech.
`Conf., Denver, CO (1994)
`
`a1 MLE. Graham, M. S. Weng, and W. D. Sproul, Proc. 38th SVC Tech. Conf.
`(1995)
`
`12 M. Graham. K. Legg, P. Rudnik, W. Sproul, ICMCTE, San Diego, CA (1995)
`
`13. R.A. Scholl, Proc. 35th SVC Tech. Conf. 391ff (1992)
`
`14 RL. Cormia, et al, U.S. Patent 4,046,659, issued Sept. 6, 1977 and
`assigned to Airco Corp.
`
`5
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`Case 5:20-cv-09341-EJD Document 145-11 Filed 04/01/22 Page 7 of 9
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`POWER SYSTEMS FOR REACTIVE SPUTTERING OF INSULATING FILMS
`
`15 G. Este and W. D. Westwood,J. Vac. Sci. Technol. A6, 1845ff (1988)
`16 M. Scherer, j. Schmitt, R. Lanz, and M. Schanz, Leybold AG Technical Note
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`17D. A. Glocker, j. Vac. Sci. Technol. A, 2989ff (1993)
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`18 S. Schiller, K Goedicke, Ch. Metzner, ICMCTF (1994)
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`1g Magnetron, inc., productliterature
`20 R. Griin, US Patent 5,015,493, issued May 14, 1991
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`PLASMA
`SYSTEM
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`
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`
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`Figure 1. Switchmode power supply block diagram
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`SPARC-LE® UNIT
`[ |
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`
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` I
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`MDX
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`POWER
`SUPPLY
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`ARC
`DETECT
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`PLASMA
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`Figure 2. SPARC-LE® unit simplified schematic
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`Nea
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`MDX
`POWER
`SUPPLY
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`[PLASMA
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`Li
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`Figure 3. SPARC-LE® circuit with switch closed
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`Case 5:20-cv-09341-EJD Document 145-11 Filed 04/01/22 Page 8 of 9
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`SPAR-LE
`triggered__|
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`-600 V_
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`of
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`Arc Event
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`Time (1ps/div)
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`Figure 5. SPARC-LE° waveforms,arc triggered
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`CATHODE
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`Figure 6. Dual-cathode system,idealized waveforms
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`Case 5:20-cv-09341-EJD Document 145-11 Filed 04/01/22 Page 9 of 9
`Case 5:20-cv-09341-EJD Document 145-11 Filed 04/01/22 Page 9 of 9
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`POWER SYSTEMS FOR REACTIVE SPUTTERING OF INSULATING FILMS
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`\ = ADVANCED
`C. ENERGY’
`a
`
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`
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