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`Exhibit 4
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`SAMSUNG AUSTIN SEMICONDUCTOR
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`Aus‘tin Semiconductor
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`_
`Case 5:20-cv-05676-EJD Document 23-6 Filed 09/25/20 Page 2 of 6
`Case 5:20-cv-05676-EJD Document 23-6 Flled 09/25/20 Page 2 of 6
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`SAMSUNG
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`Foundry Overview
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`Providing cutting—edge technology since 2017 in Aus’fin
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`httpsn's\nnv.samsungcom‘115ssasBusinessO\‘en'ie\v[9
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`52020 3:53:14 PM]
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`SAMSUNG AUSTIN SEMICONDUCTOR
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`Case 5:20-cv-05676-EJD Document 23-6 Filed 09/25/20 Page 3 of 6
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`Samsung sarted its foundry business in 2005 to provide cutting-edge technologies to a broader market. In 2017, Samsung Foundry
`found
`its home away from home in Ausin. Through several successful collaborations with foundry cusomers and a continuous drive to
`develop
`the mos cutting-edge technologies, Samsung Ausin Semiconductor has become a major player in the foundry market. Samsung
`Ausin Semiconductor
`primarily focuses on the production of 14nm and 28/32nm technologies.
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`Trailblazer in Cutting-Edge Technology
`Our innovative 3D-sructure FinFet technology is one of the indusry’s mos important milesones
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`A New Paradigm for All The Bes Advanced Technologies
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`https://www.samsung.com/us/sas/Business/Overview[9/23/2020 3:53:14 PM]
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`SAMSUNG AUSTIN SEMICONDUCTOR
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`Case 5:20-cv-05676-EJD Document 23-6 Filed 09/25/20 Page 4 of 6
`Samsung Foundry’s mos advanced process technology enables its cusomers to obtain a higher performance
`without having to increase the chip size or maintain the same performance with a smaller chip.
`
`Samsung Foundry has taken a revolutionary sep by implementing
`the innovative 3D-sructure FinFET technology. 3D FinFET is the mos important technology milesone in the foundry
`indusry in the las 10 years of transition into 14nm process for the superior performance, power and scaling benefts.
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`With the frs 14nm class FinFET ofering for foundry indusry, Samsung Foundry has led technology innovation. Beyond
`14nm technology, Samsung Foundry continues technology innovation for next generation of development.
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`Continuous Technology Innovation without Borders
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`Although innovation without borders is the trend of today’s technological advances,
`https://www.samsung.com/us/sas/Business/Overview[9/23/2020 3:53:14 PM]
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` scaling limit has been imposed on the process evolution
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`SAMSUNG AUSTIN SEMICONDUCTOR
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`Case 5:20-cv-05676-EJD Document 23-6 Filed 09/25/20 Page 5 of 6
`Case 5. 20-c—v--0-5676 EJD Document 23- 6 Filed 09/25/20 Page 5 of 6
`in the semiconduct01 indushy Since 130nm to 28nm continuous scaling-downl1as only been possible thlough 1nate11'al innovations
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`such as using copper filler. low-k, shess-teclmology. ULK. and HKMG. Subsequently. planar transistors 011 Bulk-Si hit the gate length
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`scaling limit. however Samsmlg Foundiy found innovative solutions in the shuctlu‘e of transistom with FDSOI and ‘3D FinFET‘.
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`Technology migration history
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`Performance
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`FD-SOI
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`HK/MG
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`ULK
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`Stress Tech
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`Low-k
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`FinFET
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`EUV
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`Copper
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`Material Innovation
`Structure innovation
`thhography innovation
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`
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`130nm
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`90nm
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`65nm
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`45nm
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`32/28nm
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`14nm
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`10nm
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`7nm
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`httpsni/www. samsung.com/us/sasiBusinessJOverview[912312020 3 :53 : 14 PM]
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`SAMSUNG AUSTIN SEMICONDUCTOR
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`COMPANY
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`Case 5:20-cv-05676-EJD Document 23-6 Filed 09/25/20 Page 6 of 6
`BUSINESS
`SUSTAINABILITY
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`Foundiy Oren‘iew
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`SAS Technology
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`1 411m
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`2863211111
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`4556511111
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`Our Approach
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`People
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`Conununity
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`Environment
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`Compliance
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`Sustainability Report
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`Vision
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`Philosophy
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`History
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`President Message
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`Awards & Certificates
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`CAREERS
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`Our Talent
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`Culture
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`Benefits
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`Intemships
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`Job Opportunities
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`Follow Us
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`Site Map
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`Terms of Use/ Privacy Policy
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`Contact Us
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`Related Links A
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`
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`https:ffwuw.samsung.com’usc’sas:’Businessfi'Overview 9
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`020 3:53: 14 PM]
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