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`Case 5:20-cv-05676-EJD Document 23-3 Filed 09/25/20 Page 2 of 47
`C6595120'CV'05676'EJD D"c“milllllllllll|||ll'llillllfilillzllllllllIllllllllllllIllllllllllllllll
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`US007544276B2
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`(12) United States Patent
`US 7,544,276 B2
`(10) Patent N0.:
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`(45) Date of Patent: Jun. 9, 2009
`Zhang et al.
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`(54) BIASED PULSE DC REACTIVE SPUTTERING
`0F OXIDE FILMS
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`(75)
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`73
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`Inventors: Hongmei Zhang, San Jose, CA (US);
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`Mukundan Narasimhan, San Jose, CA
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`(US); Ravi B. Mullapudi, San Jose, CA
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`(US); Richard E. Demaray, Portola
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`Valley, CA (US)
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`Assi nee: S rin Works, LLC, Minnetonka, MN
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`(US)
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`*
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`Notice:
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`J
`y
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`Sub'ect to an disclaimer, the term of this
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`patent is extended or adjusted under 35
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`U.S.C. 154(b) by 529 days.
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`EP
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`4,619,680 A
`RE32,449 E
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`4,710,940 A
`4,785,459 A
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`4,915,810 A
`4,978,437 A
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`10/1986 Nourshargh et a1.
`6/1987 Claussen
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`12/1987 Sipes, Jr.
`11/1988 Baer
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`4/1990 Kestigian et a1.
`12/1990 Wirz
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`(Continued)
`FOREIGN PATENT DOCUMENTS
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`0 510 883 A2
`10/1992
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`(21) Appl.No.: 11/228,834
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`(22)
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`Filed:
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`Sep. 16, 2005
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`(Continued)
`OTHER PUBLICATIONS
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`(65)
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`Prior Publication Data
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`US 2006/0054496 A1
`Mar. 16, 2006
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`Related US. Application Data
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`(62) Division of application No. 10/101,863, filed on Mar.
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`16, 2002, now Pat. No. 7,378,356.
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`Int. Cl.
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`(2006.01)
`C23C 14/34
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`(52) US. Cl.
`.............................. 204/298.08; 204/298.2;
`204/298.06
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`(51)
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`(58) Field of Classification Search .............. 204/298.2,
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`204/298.06, 298.08
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`See application file for complete search history.
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`References Cited
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`Affinito et a1., “PML/oxide/PML Barrier Layer Performance Differ-
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`ences Arising from Use of UV or Electron Beam Polymerization of
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`the PML Layers,” Thin Solid Films v01. 308-309, pp. 19-25 (1997).
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`(Continued)
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`Primary ExamineriRodney G McDonald
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`(74) Attorney, Agent, or FirmiFinnegan, Henderson,
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`Farabow, Garrett & Dunner, LLP
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`(57)
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`ABSTRACT
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`A biased pulse DC reactor for sputtering of oxide films is
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`presented. The biased pulse DC reactor couples pulsed DC at
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`a particular frequency to the target through a filter which
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`filters out the effects of a bias power applied to the substrate,
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`protecting the pulsed DC power supply. Films deposited uti-
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`lizing the reactor have controllable material properties such
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`as the index of refraction. Optical components such as
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`waveguide amplifiers and multiplexers can be fabricated
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`using processes performed on a reactor according to the
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`present invention.
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`13 Claims, 27 Drawing Sheets
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`18
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`Case 5:20-cv-05676-EJD Document 23-3 Filed 09/25/20 Page 3 of 47
`Case 5:20-cv-05676-EJD Document 23-3 Filed 09/25/20 Page 3 of 47
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`US 7,544,276 B2
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`Page 2
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`US. PATENT DOCUMENTS
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`Case 5:20-cv-05676-EJD Document 23-3 Filed 09/25/20 Page 4 of 47
`Case 5:20-cv-05676-EJD Document 23-3 Filed 09/25/20 Page 4 of 47
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`US 7,544,276 B2
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